JP6705231B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP6705231B2 JP6705231B2 JP2016053128A JP2016053128A JP6705231B2 JP 6705231 B2 JP6705231 B2 JP 6705231B2 JP 2016053128 A JP2016053128 A JP 2016053128A JP 2016053128 A JP2016053128 A JP 2016053128A JP 6705231 B2 JP6705231 B2 JP 6705231B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 107
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 106
- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 125
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 88
- 229910052759 nickel Inorganic materials 0.000 claims description 61
- 239000013078 crystal Substances 0.000 claims description 40
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 33
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 description 32
- 239000010936 titanium Substances 0.000 description 25
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 24
- 229910052719 titanium Inorganic materials 0.000 description 24
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910010038 TiAl Inorganic materials 0.000 description 7
- 238000007669 thermal treatment Methods 0.000 description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Description
実施の形態にかかる炭化珪素半導体装置の構造について、縦型MOSFETを例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の構造を示す断面図である。図1には、電流駆動を担う活性領域(オン状態のときに電流が流れる領域)の1つの単位セル(半導体素子の機能単位)を示し、この単位セルに隣接するように配置された他の単位セルや、エッジ終端領域に配置された耐圧構造を図示省略する。エッジ終端領域は、活性領域の周囲を囲み、n-型ドリフト領域2の基体おもて面側の電界を緩和し耐圧を保持する領域である。
2 n-型ドリフト領域
3 p型ベース領域
4 n+型ソース領域
5 p+型コンタクト領域
6 ゲート絶縁膜
6a ゲート絶縁膜の端部
7 ゲート電極
8 層間絶縁膜
8a コンタクトホール
9 窒化チタン膜
10 炭化珪素基体のおもて面のニッケルシリサイド膜(第1ニッケルシリサイド膜)
11 おもて面電極
12 炭化珪素基体の裏面のニッケルシリサイド膜(第2ニッケルシリサイド膜)
13 裏面電極
20 炭化珪素基体
21 n-型炭化珪素層
31 炭化珪素基体のおもて面に形成されたニッケル膜(第1ニッケル膜)
31a 第1ニッケル膜の、炭化珪素基体のおもて面に接する部分
31b 第1ニッケル膜の、シリサイド化せずに窒化チタン膜上に残る部分
32 炭化珪素基体とのオーミックコンタクトを形成するための高速熱処理
33 炭化珪素基体の裏面に形成されたニッケル膜(第2ニッケル膜)
Claims (5)
- 炭化珪素からなる半導体基板の表面に設けられた絶縁ゲート構造と、
前記絶縁ゲート構造を覆う絶縁膜と、
前記絶縁膜を深さ方向に貫通するコンタクトホールと、
前記絶縁膜の表面および前記コンタクトホールの内壁に沿って覆うように設けられた窒化チタン膜と、
前記コンタクトホールにおいて前記窒化チタン膜上を除き前記半導体基板の表面のみに設けられ、前記半導体基板とのオーミックコンタクトをなすニッケルシリサイド膜と、
を備え、
前記窒化チタン膜の厚さは、50nm以上150nm以下であり、
前記窒化チタン膜の結晶粒径は、20nm以上50nm以下であることを特徴とする炭化珪素半導体装置。 - 前記窒化チタン膜の結晶構造は、前記半導体基板の表面に垂直な方向に成長し、前記半導体基板の表面に水平な方向に並んだ柱状の結晶粒からなる柱状構造となっていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 炭化珪素からなる半導体基板の表面に設けられた絶縁ゲート構造を形成する第1工程と、
前記半導体基板の表面に、前記絶縁ゲート構造を覆うように絶縁膜を形成する第2工程と、
前記絶縁膜を深さ方向に貫通するコンタクトホールを形成して、前記半導体基板の表面を選択的に露出させる第3工程と、
前記半導体基板の表面に、前記絶縁膜を覆うようにスパッタリングで窒化チタン膜を形成する第4工程と、
前記コンタクトホールに露出する前記半導体基板の表面から前記窒化チタン膜の上に延在するようにニッケル膜を形成する第5工程と、
熱処理により前記半導体基板と前記ニッケル膜とを反応させてシリサイド化し、前記半導体基板とのオーミックコンタクトをなすニッケルシリサイド膜を形成する第6工程と、
前記第6工程の後、前記ニッケル膜の、シリサイド化した部分以外の部分を除去する工程を含み、
前記第4工程で形成される前記窒化チタン膜の厚さは、50nm以上150nm以下であり、
前記第6工程では、前記熱処理により、前記窒化チタン膜の結晶粒間の隙間が前記熱処理の前よりも狭くなるまたは無くなるように、前記窒化チタン膜の結晶粒径を20nm以上50nm以下にすることを特徴とする炭化珪素半導体装置の製造方法。 - 前記熱処理は、800℃以上1100℃以下の温度の高速熱処理(RTA:ラピッドサーマルアニール)によることを特徴とする請求項3に記載の炭化珪素半導体装置の製造方法。
- 前記第6工程の後に行う他の熱処理は400℃以下の温度であることを特徴とする請求項3または4に記載の炭化珪素半導体装置の製造方法。
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