JP6685142B2 - 表示装置及びその製造方法 - Google Patents
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- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
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- 239000000956 alloy Substances 0.000 description 2
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
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- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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Description
図1は、本発明の第1の実施形態に係る表示装置を示す断面図である。表示装置として、有機エレクトロルミネッセンス表示装置を例に挙げる。表示装置は、例えば、赤(R)、緑(G)及び青(B)からなる複数色の単位画素(サブピクセル)を組み合わせて、フルカラーの画素(ピクセル)を形成し、フルカラーの画像を表示するようになっている。
図5は、本発明の第2の実施形態に係る表示装置の一部の拡大断面図である。本実施形態では、下地層232の上に画素電極230が形成されており、第1酸化物導電層236の突出部236aの少なくとも先端及び下地層232に無機絶縁層262が載っている。無機絶縁層262は、金属導電層238の先端及び第2酸化物導電層240の先端から間隔をあけて形成されている。つまり、下地層232とは別に、無機絶縁層262が設けられている。
Claims (9)
- 下地層と、
前記下地層に積層する複数の画素電極と、
前記複数の画素電極に積層する発光素子層と、
前記発光素子層に積層する共通電極と、
無機絶縁層と、
を有し、
前記複数の画素電極のそれぞれは、前記下地層に直接接触する第1酸化物導電層と、前記第1酸化物導電層に直接接触する金属導電層と、前記金属導電層に直接接触する第2酸化物導電層と、を含み、
前記下地層は、前記金属導電層よりも、前記第1酸化物導電層に対して密着性が高く、
前記第1酸化物導電層は、隣同士の前記画素電極の相互に対向する方向に、前記金属導電層及び前記第2酸化物導電層からはみ出す突出部を有し、
前記無機絶縁層は、前記第1酸化物導電層の前記突出部の少なくとも先端及び前記下地層に載り、前記金属導電層の先端及び前記第2酸化物導電層の先端から間隔をあけて形成されていることを特徴とする表示装置。 - 請求項1に記載された表示装置において、
前記第1酸化物導電層は、前記複数の画素電極のそれぞれの周縁部の全体に、前記突出部を有することを特徴とする表示装置。 - 請求項1又は2に記載された表示装置において、
前記第1酸化物導電層及び前記第2酸化物導電層は、それぞれ、酸化インジウムスズ及び酸化インジウム亜鉛からなる群より選ばれる材料を含み、
前記金属導電層は、金、アルミニウム、及び銀からなる群より選ばれる材料を含むことを特徴とする表示装置。 - 複数の画素電極を形成する工程と、
前記複数の画素電極に発光素子層を積層する工程と、
前記発光素子層に共通電極を積層する工程と、
を含み、
前記複数の画素電極を形成する工程は、
前記複数の画素電極に対応する形状で、隣同士の前記画素電極に対応する部分が無機絶縁層で隔離されるように、第1酸化物導電層のパターンを形成する工程と、
前記第1酸化物導電層よりも前記無機絶縁層に対して密着性が低い金属導電層を、前記無機絶縁層及び前記第1酸化物導電層の前記パターンに直接接触するように形成する工程と、
第2酸化物導電層を、前記金属導電層の上に形成する工程と、
前記金属導電層及び前記第2酸化物導電層を、前記第1酸化物導電層の前記パターンの内側に載った部分が残るように、ウエットエッチングによりパターニングする工程と、
を含み、
前記第1酸化物導電層を形成する工程で、前記第1酸化物導電層を下地層の上でパターニングした後に、前記下地層の上に前記無機絶縁層を形成することを特徴とする表示装置の製造方法。 - 請求項4に記載された表示装置の製造方法において、
前記第1酸化物導電層を形成する工程で、前記無機絶縁層を、前記第1酸化物導電層の前記パターンの先端に載るように、前記パターンから露出した前記下地層の上に形成することを特徴とする表示装置の製造方法。 - 請求項4又は5に記載された表示装置の製造方法において、
前記第1酸化物導電層及び前記第2酸化物導電層は、それぞれ、酸化インジウムスズ及び酸化インジウム亜鉛からなる群より選ばれる材料を含み、
前記金属導電層は、金、アルミニウム、及び銀からなる群より選ばれる材料を含むことを特徴とする表示装置の製造方法。 - 請求項4から6のいずれか1項に記載された表示装置の製造方法において、
前記ウエットエッチングは、混酸及びシュウ酸の少なくとも一方を使用して行うことを特徴とする表示装置の製造方法。 - 下地層と、
前記下地層に積層する複数の画素電極と、
前記複数の画素電極に積層する発光素子層と、
前記発光素子層に積層する共通電極と、
無機絶縁層と、
を有し、
前記複数の画素電極のそれぞれは、前記下地層に直接接触する第1酸化物導電層と、前記第1酸化物導電層に直接接触する金属導電層と、前記金属導電層に直接接触する第2酸化物導電層と、を含み、
前記下地層は、シリコン窒化膜またはシリコン酸化膜であり、
前記金属導電層は、金、アルミニウム、及び銀からなる群より選ばれる材料を含み、
前記第1酸化物導電層は、隣同士の前記画素電極の相互に対向する方向に、前記金属導電層及び前記第2酸化物導電層からはみ出す突出部を有し、
前記無機絶縁層は、前記第1酸化物導電層の前記突出部の少なくとも先端及び前記下地層に載り、前記金属導電層の先端及び前記第2酸化物導電層の先端から間隔をあけて形成されていることを特徴とする表示装置。 - 請求項8に記載された表示装置において、
前記第1酸化物導電層は、前記複数の画素電極のそれぞれの周縁部の全体に、前記突出部を有することを特徴とする表示装置。
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CN201710058288.1A CN107026189B (zh) | 2016-02-02 | 2017-01-23 | 显示装置及其制造方法 |
TW106102809A TWI625984B (zh) | 2016-02-02 | 2017-01-25 | 顯示裝置及其製造方法 |
KR1020170012613A KR101943184B1 (ko) | 2016-02-02 | 2017-01-26 | 표시 장치 및 그 제조 방법 |
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US11545541B2 (en) | 2017-09-28 | 2023-01-03 | Sharp Kabushiki Kaisha | Display device including light emitting element including reflection electrode on which multiple metallic conductive layers are stacked and method for manufacturing same |
US10355210B2 (en) * | 2017-10-30 | 2019-07-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of OLED substrate and manufacturing method of OLED display device |
CN107863458B (zh) * | 2017-10-30 | 2019-11-15 | 武汉华星光电半导体显示技术有限公司 | Oled基板的制作方法及oled显示装置的制作方法 |
CN108461656B (zh) * | 2018-01-19 | 2020-07-28 | 云谷(固安)科技有限公司 | 一种刻蚀阳极膜层的方法及其显示面板 |
CN108336116B (zh) * | 2018-02-08 | 2022-03-08 | 京东方科技集团股份有限公司 | 一种oled阵列基板及其制备方法、显示装置 |
US20220206623A1 (en) * | 2019-04-19 | 2022-06-30 | Sharp Kabushiki Kaisha | Display device |
CN111045262B (zh) * | 2019-12-09 | 2021-07-06 | 深圳市华星光电半导体显示技术有限公司 | Coa基板及显示面板 |
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JP4362696B2 (ja) * | 2003-03-26 | 2009-11-11 | ソニー株式会社 | 発光素子およびその製造方法、ならびに表示装置 |
JP4170138B2 (ja) * | 2003-04-28 | 2008-10-22 | 三菱電機株式会社 | 有機電界発光素子およびその製造方法 |
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