JP6648878B2 - 回路基板 - Google Patents
回路基板 Download PDFInfo
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- JP6648878B2 JP6648878B2 JP2015222283A JP2015222283A JP6648878B2 JP 6648878 B2 JP6648878 B2 JP 6648878B2 JP 2015222283 A JP2015222283 A JP 2015222283A JP 2015222283 A JP2015222283 A JP 2015222283A JP 6648878 B2 JP6648878 B2 JP 6648878B2
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- heat transfer
- circuit board
- transfer structure
- electronic component
- metal pattern
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- 238000012546 transfer Methods 0.000 claims description 173
- 239000002184 metal Substances 0.000 claims description 69
- 229910052751 metal Inorganic materials 0.000 claims description 69
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910002804 graphite Inorganic materials 0.000 claims description 20
- 239000010439 graphite Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 229910021389 graphene Inorganic materials 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 229910001374 Invar Inorganic materials 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 11
- 238000010168 coupling process Methods 0.000 claims 11
- 238000005859 coupling reaction Methods 0.000 claims 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 75
- 239000012792 core layer Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 238000012360 testing method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 102100039856 Histone H1.1 Human genes 0.000 description 1
- 102100039855 Histone H1.2 Human genes 0.000 description 1
- 101001035402 Homo sapiens Histone H1.1 Proteins 0.000 description 1
- 101001035375 Homo sapiens Histone H1.2 Proteins 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002335 surface treatment layer Substances 0.000 description 1
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- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
- H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
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- H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4608—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated comprising an electrically conductive base or core
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
- H01L2224/251—Disposition
- H01L2224/2518—Disposition being disposed on at least two different sides of the body, e.g. dual array
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
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- H05K2201/09—Shape and layout
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- H05K2201/09136—Means for correcting warpage
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/10015—Non-printed capacitor
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits
- H05K3/445—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits having insulated holes or insulated via connections through the metal core
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- Electromagnetism (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
110 第1熱伝達用構造体
111 プライマー層
120 絶縁部
121 第1上部絶縁層
121´ 第1下部絶縁層
122 第2上部絶縁層
122´ 第2下部絶縁層
131 第1金属パターン
133 第3金属パターン
134 第5金属パターン
141 第2金属パターン
142 第4金属パターン
144 第6金属パターン
S ソルダ
200 第2電子部品
V1 第1ビア
V2 第2ビア
V4 第4ビア
V5 第5ビア
V6 第6ビア
V7 第7ビア
V8 第8ビア
10 コア部
11 第1コア層
12 第2コア層
13 第3コア層
14 絶縁膜
P1 第1回路パターン
P2 第2回路パターン
TV スルービア
500 第1電子部品
800 付加基板
810 接続パッド
L1 第3熱伝達用構造体
L2 放熱部
C1 第1キャビティ
C2 第2キャビティ
Claims (19)
- 絶縁部と、
熱伝導性物質で形成され、キャビティまたはリセス(recess)部が備えられ、少なくとも一部が前記絶縁部に挿入される第1熱伝達用構造体と、
前記キャビティまたはリセス部の内部に少なくとも一部が挿入される電子素子と、
を含み、
前記絶縁部は、コア部及び前記コア部の上部と下部に配置された絶縁層を含み、前記第1熱伝達用構造体は、前記コア部よりも厚く、前記コア部に形成されたキャビティに配置された、回路基板。 - 前記電子素子に一面が接触する信号ビアと、
前記第1熱伝達用構造体に一面が接触する放熱ビアと、をさらに含む請求項1に記載の回路基板。 - 前記放熱ビアの他面に接触する第1金属パターンと、
前記信号ビアの他面に接触する第2金属パターンと、をさらに含み、
前記第1金属パターンに流入する熱量が、前記第2金属パターンに流入する熱量より大きい請求項2に記載の回路基板。 - 前記回路基板の上部には第1電子部品が搭載され、
前記第1電子部品は、第1領域と、前記第1電子部品の動作時に前記第1領域よりも温度が高くなる第2領域とを含み、前記第2領域の少なくとも一部は、結合部材を媒介にして前記第1金属パターンと接続する請求項3に記載の回路基板。 - 前記回路基板の上部には第1電子部品が搭載され、
前記第1熱伝達用構造体の少なくとも一部は、前記第1電子部品の垂直下方に位置する請求項2に記載の回路基板。 - 前記電子素子の少なくとも一部は、前記第1電子部品の垂直下方に位置する請求項5に記載の回路基板。
- 前記第1熱伝達用構造体の表面には、
前記第1熱伝達用構造体と前記絶縁部との間の密着力を高める密着力向上部が備えられる請求項1から請求項6のいずれか1項に記載の回路基板。 - 前記密着力向上部は、アクリル系シランを含むプライマーで形成される請求項7に記載の回路基板。
- 前記第1熱伝達用構造体は、上面及び下面を含む六面体に形成され、
前記第1熱伝達用構造体の上面に 一面が接触する第1ビアと、
前記第1ビアの他面に接触する第1金属パターンと、
前記第1熱伝達用構造体の下面に一面が接触する第2ビアと、
前記第2ビアの他面に接触する第2金属パターンと、
前記電子素子の上面に一面が接触する第3ビアと、
前記第3ビアの他面に接触する第3金属パターンと、
前記電子素子の下面に一面が接触する第4ビアと、
前記第4ビアの他面に接触する第4金属パターンと、をさらに含む請求項1に記載の回路基板。 - 前記第1金属パターンに第1結合部材が接触し、
前記第1結合部材には、第1電子部品が接触する請求項9に記載の回路基板。 - 前記第2金属パターンに第2結合部材が接触し、前記第2結合部材には付加基板が接触し、
前記第1電子部品で発生した熱が、前記第1結合部材、前記第1金属パターン、前記第1ビア、前記第1熱伝達用構造体、前記第2ビア、前記第2金属パターン及び前記第2結合部材を経て前記付加基板に伝達される請求項10に記載の回路基板。 - 前記付加基板を貫通して上部面及び下部面が露出され、熱伝導性物質で形成される放熱部をさらに含み、
前記第2結合部材は、前記放熱部の上面と結合する請求項11に記載の回路基板。 - 前記第1電子部品は、第1領域と、前記第1領域よりクロックスピード(clock speed)の高い第2領域とを含み、
前記第2領域から前記第1結合部材までの距離が前記第1領域から前記第1結合部材までの距離より小さい請求項11または請求項12に記載の回路基板。 - 前記コア部は、熱伝導性物質を含む、請求項1から請求項13のいずれか一項に記載の回路基板。
- 絶縁部と、
熱伝導性物質で形成され、キャビティまたはリセス部が備えられ、少なくとも一部が前記絶縁部に挿入される第1熱伝達用構造体と、を含み、
前記第1熱伝達用構造体は、
少なくとも一つの貫通孔が備えられた第1構造層と、
前記貫通孔の内部に充填される物質が前記第1構造層の上面及び前記第1構造層の下面に備えられて一体に形成された第2構造層と、
を含み、
前記絶縁部は、コア部及び前記コア部の上部と下部に配置された絶縁層を含み、前記第1熱伝達用構造体は、前記コア部よりも厚く、前記コア部に形成されたキャビティに配置された、回路基板。 - 前記第1構造層は、インバー(Invar)で形成され、
前記第2構造層は、銅(Cu)で形成される請求項15に記載の回路基板。 - 前記第1構造層は、グラファイトまたはグラフェンで形成される請求項15に記載の回路基板。
- 前記コア部は、熱伝導性物質を含む、請求項15から請求項17のいずれか一項に記載の回路基板。
- 回路基板であって、
第1キャビティが備えられた第1絶縁層と、
前記第1キャビティに少なくとも一部が挿入され、第2キャビティが備えられた第1熱伝達用構造体と、
前記第2キャビティに少なくとも一部が挿入される電子素子と、
前記第1絶縁層、前記第1熱伝達用構造体、及び前記電子素子の上部を覆う第2絶縁層と、
前記第1絶縁層、前記第1熱伝達用構造体、及び前記電子素子の下部を覆う第3絶縁層と、
前記第2絶縁層を貫通し、前記第1熱伝達用構造体に一端が接触する第1ビアと、
前記第3絶縁層を貫通し、前記第1熱伝達用構造体に一端が接触する第2ビアと、
前記第2絶縁層を貫通し、前記電子素子に一端が接触する第3ビアと、
前記第3絶縁層を貫通し、前記電子素子に一端が接触する第4ビアと、
を含み、
前記回路基板の上部には第1電子部品が搭載され、
前記電子素子の少なくとも一部は、前記第1電子部品の垂直下方に位置し、
前記電子素子は、デカップリングキャパシタであり、前記第3ビアは、前記第1電子部品の電源端子に接続し、
前記第1電子部品は、第1領域と、前記第1電子部品の動作時に前記第1領域よりも温度が高くなる第2領域と、を含み、
前記第2領域の少なくとも一部に接触する結合部材と接触する金属パターンが、前記第1ビアの他端と接触する、回路基板。
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