JP6640904B2 - トレンチ下部にオフセットを有するSiC半導体デバイス - Google Patents
トレンチ下部にオフセットを有するSiC半導体デバイス Download PDFInfo
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- JP6640904B2 JP6640904B2 JP2018081936A JP2018081936A JP6640904B2 JP 6640904 B2 JP6640904 B2 JP 6640904B2 JP 2018081936 A JP2018081936 A JP 2018081936A JP 2018081936 A JP2018081936 A JP 2018081936A JP 6640904 B2 JP6640904 B2 JP 6640904B2
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- sic semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 197
- 238000000034 method Methods 0.000 claims description 50
- 210000000746 body region Anatomy 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 230000007480 spreading Effects 0.000 claims description 15
- 238000003892 spreading Methods 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 83
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 79
- 230000008569 process Effects 0.000 description 25
- 239000013078 crystal Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- Ceramic Engineering (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
102 トレンチ
104 第1の面
106 第1の側壁
108 第2の側壁
110 トレンチ下部
112 電極
114 トレンチ誘電体
118 本体領域
120 シールド構造
121 ソース領域
122 第2の面
124 領域
126 電流拡散ゾーン
128 ドリフトゾーン
130 接触構造
132 第2の負荷電極
134 トレンチ構造
136 メサ部分
138 第1の負荷電極
140 ハードマスク層
142 レジストマスク
144 ハードマスク
146 第1のトレンチ
148 マスク
150 第2のトレンチ
152 角部
1000 半導体デバイス
1101 トレンチ下部の第1のセクション
1102 トレンチ下部の第2のセクション
1121 電極の下部の第1のセクション
1122 電極の下部の第2のセクション
1201 シールド領域
1202 接続領域
1211 ソース領域の第1の部分
1212 ソース領域の第2の部分
2000 半導体デバイスを製造する方法
d1 第1のトレンチの深さ
dv1 トレンチ下部の第1のセクションとシールド領域のピークとの間の垂直距離
dv2 ソース領域の第1の部分の下部とソース領域の第2の部分の下部との間の垂直距離
h 垂直オフセット
P ピーク
t1 第1の厚さ
t2 第2の厚さ
TC トランジスタセル
y 垂直方向
Claims (20)
- 半導体デバイスであって、
第1の面からSiC半導体本体内に延在するトレンチであって、第1の側壁と、前記第1の側壁に対向する第2の側壁と、トレンチ下部とを有するトレンチと、
前記トレンチ内に配置され、且つゲート誘電体によって前記SiC半導体本体から電気的に絶縁されるゲート電極と、
前記第1の側壁に隣接する第1の導電型の本体領域と、
前記第2の側壁及び前記トレンチ下部の少なくとも一部に隣接する前記第1の導電型のシールド構造と
を含み、
前記第1の面から、前記第1の面に対向する前記SiC半導体本体の第2の面へと延在する垂直方向に沿って、前記トレンチ下部の第1のセクション及び前記トレンチ下部の第2のセクションは、垂直オフセットだけ互いにずれており、
前記本体領域と前記第1の面との間に第2の導電型のソース領域をさらに含み、前記ソース領域の第1の部分は、前記トレンチの前記第1の側壁と、前記ソース領域の第2の部分との間に配置され、及び前記第2の部分の下部は、前記SiC半導体本体において、前記垂直方向に沿って前記第1の部分の下部よりも深くに配置される、半導体デバイス。 - 前記シールド構造は、前記第1の導電型のシールド領域と、前記第1の導電型の接続領域とを含み、前記接続領域は、前記シールド領域と前記第1の面との間に配置され、前記シールド領域のドーピング濃度プロファイルは、前記SiC半導体本体において前記トレンチ下部よりも深くに位置する前記垂直方向に沿ったピークを有する、請求項1に記載の半導体デバイス。
- 前記トレンチ下部の前記第1のセクションと、前記シールド領域の前記ピークとの間の垂直距離は、200nm〜800nmの範囲である、請求項2に記載の半導体デバイス。
- 前記トレンチ下部の前記第2のセクションは、前記SiC半導体本体において前記トレンチ下部の前記第1のセクションよりも深くに配置される、請求項1から3の何れか一項に記載の半導体デバイス。
- 前記垂直オフセットは、10nm〜100nmの範囲である、請求項1から4の何れか一項に記載の半導体デバイス。
- 前記ゲート電極の下部の第2のセクションは、前記SiC半導体本体において、前記垂直方向に沿って前記ゲート電極の前記下部の第1のセクションよりも深くに配置される、請求項1から5の何れか一項に記載の半導体デバイス。
- 前記ソース領域の前記第1の部分の前記下部と、前記ソース領域の前記第2の部分の前記下部との間の垂直距離は、前記トレンチ下部の前記第1のセクションと、前記トレンチ下部の前記第2のセクションとの間の垂直距離に対応する、請求項1に記載の半導体デバイス。
- 前記シールド構造は、前記第1の面において前記第2の側壁に隣接する、請求項1から7の何れか一項に記載の半導体デバイス。
- 前記第2の側壁及び前記第1の面に隣接する前記第2の導電型の領域をさらに含む、請求項1から7の何れか一項に記載の半導体デバイス。
- 前記トレンチ下部に隣接する前記ゲート誘電体の第1のパートの厚さは、前記第1及び第2の側壁に隣接する前記ゲート誘電体の第2のパートの厚さよりも大きい、請求項1から9の何れか一項に記載の半導体デバイス。
- 前記第2の導電型の電流拡散ゾーンと、前記第2の導電型のドリフトゾーンとをさらに含み、前記電流拡散ゾーンは、前記本体領域と前記ドリフトゾーンとの間に配置され、且つ前記電流拡散ゾーンは、前記本体領域及び前記シールド構造に隣接し、及び前記電流拡散ゾーンの平均正味ドーピング濃度は、前記ドリフトゾーンの平均正味ドーピング濃度よりも大きい、請求項1から10の何れか一項に記載の半導体デバイス。
- 前記SiC半導体本体は、4H−SiC半導体本体であり、及び前記第1の側壁の側壁面は、(11−20)である、請求項1から11の何れか一項に記載の半導体デバイス。
- 電気的に並列に接続された複数のトランジスタセルをさらに含み、前記複数のトランジスタセルのそれぞれの1つは、前記トレンチ、前記ゲート誘電体、前記ゲート電極、及び前記シールド構造を含む、請求項1から12の何れか一項に記載の半導体デバイス。
- 半導体デバイスを製造する方法であって、
第1の面からSiC半導体本体内に第1のトレンチを形成することと、
前記第1のトレンチの下部を通して、第1の導電型のドーパントを前記SiC半導体本体内に導入することにより、前記SiC半導体本体に前記第1の導電型のシールド構造を形成することと、
前記第1の面から前記SiC半導体本体内に第2のトレンチを形成することと
を含み、
前記第2のトレンチは、前記SiC半導体本体内へと前記第1のトレンチよりも深く延在し、及び前記第1のトレンチと前記第2のトレンチとは、横方向に互いに一体化し、それにより、前記第2のトレンチのトレンチ下部の第2のセクションを前記SiC半導体本体において前記第2のトレンチの前記トレンチ下部の第1のセクションよりも深くに設定する、方法。 - 第1のトレンチを形成することは、パターニングされたハードマスクによって覆われた前記SiC半導体本体をエッチングすることを含む、請求項14に記載の方法。
- 前記第1のトレンチの深さは、10nm〜100nmの範囲であるように設定される、請求項14又は15に記載の方法。
- 前記シールド構造を形成することは、1MeV〜6MeVの範囲のイオン注入エネルギーでの少なくとも1回のイオン注入により、前記第1の導電型のドーパントを前記SiC半導体本体内に導入することを含む、請求項14から16の何れか一項に記載の方法。
- 前記シールド構造を形成することは、前記第1の導電型のシールド領域を形成することと、前記第1の導電型の接続領域を形成することとを含み、前記接続領域は、前記シールド領域と前記第1の面との間に配置され、前記第1の面と直角な垂直方向に沿った前記シールド領域のドーピング濃度プロファイルは、ピークを有するように設定され、及び前記ピークは、前記SiC半導体本体において前記第2のトレンチの前記トレンチ下部よりも深くに設定される、請求項14から17の何れか一項に記載の方法。
- 前記トレンチ下部の前記第1のセクションと、前記シールド領域の前記ピークとの間の垂直距離は、200nm〜800nmの範囲であるように設定される、請求項18に記載の方法。
- 前記SiC半導体本体内に第2のトレンチを形成する前にソース領域を形成することと、前記第2のトレンチの第1及び第2の側壁と前記トレンチ下部とにゲート誘電体でライニングを施すことと、前記第2のトレンチ内にゲート電極を形成することとをさらに含む、請求項14から19の何れか一項に記載の方法。
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DE102014119465B3 (de) | 2014-12-22 | 2016-05-25 | Infineon Technologies Ag | Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas |
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IT201800007780A1 (it) * | 2018-08-02 | 2020-02-02 | St Microelectronics Srl | Dispositivo mosfet in carburo di silicio e relativo metodo di fabbricazione |
DE102018123164B3 (de) * | 2018-09-20 | 2020-01-23 | Infineon Technologies Ag | Halbleitervorrichtung, die eine graben-gatestruktur enthält, und herstellungsverfahren |
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US10903322B2 (en) | 2018-11-16 | 2021-01-26 | Infineon Technologies Ag | SiC power semiconductor device with integrated body diode |
US10985248B2 (en) | 2018-11-16 | 2021-04-20 | Infineon Technologies Ag | SiC power semiconductor device with integrated Schottky junction |
US10586845B1 (en) | 2018-11-16 | 2020-03-10 | Infineon Technologies Ag | SiC trench transistor device and methods of manufacturing thereof |
DE102019105812B4 (de) * | 2019-03-07 | 2022-08-25 | Infineon Technologies Ag | Grabenstruktur enthaltende halbleitervorrichtung und herstellungsverfahren |
DE102019121859B3 (de) * | 2019-08-14 | 2020-11-26 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit graben-gate |
EP3930006A1 (en) * | 2020-06-24 | 2021-12-29 | Infineon Technologies AG | Semiconductor device including trench gate structure and buried shielding region and method of manufacturing |
US11664434B2 (en) | 2020-11-13 | 2023-05-30 | Wolfspeed, Inc. | Semiconductor power devices having multiple gate trenches and methods of forming such devices |
EP4009375B1 (en) * | 2020-12-03 | 2024-03-06 | Hitachi Energy Ltd | Power semiconductor device and a method for producing a power semiconductor device |
JP7337469B1 (ja) * | 2022-03-03 | 2023-09-04 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
DE102022209808A1 (de) | 2022-09-19 | 2024-03-21 | Robert Bosch Gesellschaft mit beschränkter Haftung | Vertikale Feldeffekttransistorstruktur und Verfahren zum Herstellen einer vertikalen Feldeffekttransistorstruktur |
CN115513299A (zh) * | 2022-11-11 | 2022-12-23 | 广东芯粤能半导体有限公司 | 沟槽型晶体管及其形成方法 |
CN118136681A (zh) * | 2024-05-08 | 2024-06-04 | 南京第三代半导体技术创新中心有限公司 | 不对称沟槽型碳化硅mosfet功率器件及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4192281B2 (ja) * | 1997-11-28 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置 |
US6291298B1 (en) * | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
US6348712B1 (en) * | 1999-10-27 | 2002-02-19 | Siliconix Incorporated | High density trench-gated power MOSFET |
US6800899B2 (en) * | 2001-08-30 | 2004-10-05 | Micron Technology, Inc. | Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor |
KR100564434B1 (ko) * | 2004-12-03 | 2006-03-28 | 주식회사 하이닉스반도체 | 리세스 게이트 및 그 제조 방법 |
DE112006001516T5 (de) * | 2005-06-10 | 2008-04-17 | Fairchild Semiconductor Corp. | Feldeffekttransistor mit Ladungsgleichgewicht |
KR100826650B1 (ko) * | 2006-12-28 | 2008-05-06 | 주식회사 하이닉스반도체 | 변형된 리세스채널 게이트를 갖는 반도체소자 및 그제조방법 |
JP4798119B2 (ja) * | 2007-11-06 | 2011-10-19 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US8264033B2 (en) * | 2009-07-21 | 2012-09-11 | Infineon Technologies Austria Ag | Semiconductor device having a floating semiconductor zone |
US8637922B1 (en) * | 2012-07-19 | 2014-01-28 | Infineon Technologies Ag | Semiconductor device |
US9293558B2 (en) * | 2012-11-26 | 2016-03-22 | Infineon Technologies Austria Ag | Semiconductor device |
DE112014000679B4 (de) | 2013-02-05 | 2019-01-17 | Mitsubishi Electric Corporation | Isolierschichtsiliciumcarbidhalbleiterbauteil und Verfahren zu dessen Herstellung |
JP6056623B2 (ja) | 2013-04-12 | 2017-01-11 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE102014107325B4 (de) * | 2014-05-23 | 2023-08-10 | Infineon Technologies Ag | Halbleiterbauelement und verfahren zum herstellen eines halbleiterbauelements |
US9577073B2 (en) * | 2014-12-11 | 2017-02-21 | Infineon Technologies Ag | Method of forming a silicon-carbide device with a shielded gate |
DE102014119465B3 (de) | 2014-12-22 | 2016-05-25 | Infineon Technologies Ag | Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas |
DE102015215024B4 (de) | 2015-08-06 | 2019-02-21 | Infineon Technologies Ag | Halbleiterbauelement mit breiter Bandlücke und Verfahren zum Betrieb eines Halbleiterbauelements |
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