JP6639260B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6639260B2 JP6639260B2 JP2016025223A JP2016025223A JP6639260B2 JP 6639260 B2 JP6639260 B2 JP 6639260B2 JP 2016025223 A JP2016025223 A JP 2016025223A JP 2016025223 A JP2016025223 A JP 2016025223A JP 6639260 B2 JP6639260 B2 JP 6639260B2
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- semiconductor layer
- nitride semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 148
- 150000004767 nitrides Chemical class 0.000 description 79
- 229910002704 AlGaN Inorganic materials 0.000 description 47
- 239000000463 material Substances 0.000 description 29
- 229910002601 GaN Inorganic materials 0.000 description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 230000005684 electric field Effects 0.000 description 15
- 230000005533 two-dimensional electron gas Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
Description
11:基板
12:バッファ層
13:高抵抗層
14:GaN層
15:AlGaN層
16:p型窒化物半導体層
22:絶縁膜
32:ドレイン電極
34:ソース電極
36:ゲート電極
38:フィールドプレート
Claims (1)
- 第1半導体層と、
前記第1半導体層の表面にヘテロ接合する第2半導体層と、
前記第2半導体層の表面上にあるドレイン電極と、
前記ドレイン電極から離れた位置で前記第2半導体層の表面上にあるソース電極と、
前記ドレイン電極と前記ソース電極の間の位置で前記第2半導体層の表面上にあるp型半導体層と、
前記p型半導体層に接するゲート電極と、を備え、
前記ドレイン電極と前記ソース電極の間の前記第2半導体層の表面の一部にリセスが形成されており、
前記p型半導体層は、前記リセスの前記ソース電極側の側面に接するとともに、前記リセス内で前記ソース電極側に偏在して位置する、半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2016025223A JP6639260B2 (ja) | 2016-02-12 | 2016-02-12 | 半導体装置 |
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---|---|---|---|
JP2016025223A JP6639260B2 (ja) | 2016-02-12 | 2016-02-12 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017143231A JP2017143231A (ja) | 2017-08-17 |
JP6639260B2 true JP6639260B2 (ja) | 2020-02-05 |
Family
ID=59627512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016025223A Active JP6639260B2 (ja) | 2016-02-12 | 2016-02-12 | 半導体装置 |
Country Status (1)
Country | Link |
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JP (1) | JP6639260B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7108386B2 (ja) * | 2017-08-24 | 2022-07-28 | 住友化学株式会社 | 電荷トラップ評価方法 |
CN107863413B (zh) * | 2017-11-02 | 2019-08-27 | 中山大学 | 一种AlGaN基日盲紫外雪崩异质结光电晶体管探测器及其制备方法 |
CN110707154A (zh) * | 2019-09-25 | 2020-01-17 | 西安理工大学 | 一种局部凹槽结构的AlGaN/GaN HEMT器件 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005159117A (ja) * | 2003-11-27 | 2005-06-16 | Toshiba Corp | 窒化物系半導体装置 |
US20110210377A1 (en) * | 2010-02-26 | 2011-09-01 | Infineon Technologies Austria Ag | Nitride semiconductor device |
JP2013074070A (ja) * | 2011-09-27 | 2013-04-22 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP2015165530A (ja) * | 2014-03-03 | 2015-09-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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2016
- 2016-02-12 JP JP2016025223A patent/JP6639260B2/ja active Active
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JP2017143231A (ja) | 2017-08-17 |
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