JP6621548B2 - 半導体製造装置用部材及びその製法 - Google Patents
半導体製造装置用部材及びその製法 Download PDFInfo
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- JP6621548B2 JP6621548B2 JP2018552259A JP2018552259A JP6621548B2 JP 6621548 B2 JP6621548 B2 JP 6621548B2 JP 2018552259 A JP2018552259 A JP 2018552259A JP 2018552259 A JP2018552259 A JP 2018552259A JP 6621548 B2 JP6621548 B2 JP 6621548B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
ウエハ載置面を有し厚さ方向に貫通する細孔が設けられた絶縁性の静電チャックと、厚さ方向に貫通するガス供給孔が設けられた導電性の冷却板とが接合された半導体製造装置用部材であって、
前記静電チャックのうち前記ウエハ載置面とは反対側の面から前記ウエハ載置面に向かって設けられた静電チャック側凹部及び前記冷却板のうち前記静電チャックに対向する対向面から該対向面とは反対側の面に向かって設けられた冷却板側凹部のうちの少なくとも一方で構成され、前記細孔及び前記ガス供給孔と連通するプラグ室と、
前記プラグ室に配置された多孔質で絶縁性の通気性プラグと、
前記通気性プラグの表面を、前記細孔に対向する部分を含み前記冷却板に直接は面しない細孔側表面と前記ガス供給孔に対向する部分を含むガス供給孔側表面とに分離するように、前記通気性プラグの表面に設けられた環状の緻密質層と、
前記緻密質層と前記プラグ室の壁面との間に充填された接着層と、
を備えたものである。
上述した半導体製造装置用部材を製造する方法であって、
(a)互いに接合する前の前記静電チャックと前記冷却板とを用意すると共に、前記プラグ室に配置される前で且つ前記緻密質層が設けられる前の前記通気性プラグを用意する工程と、
(b)前記通気性プラグに前記緻密質層を設けた後、前記通気性プラグの前記緻密質層に接着剤スラリーを塗布し、その後、前記通気性プラグを後にプラグ室になる所定の部位に配置して前記緻密質層と前記部位の壁面との間の前記接着剤スラリーを硬化させることにより前記接着層を形成する工程と、
(c)前記静電チャックと前記冷却板とを互いに接合する工程と、
を含むものである。
Claims (8)
- ウエハ載置面を有し厚さ方向に貫通する細孔が設けられた絶縁性の静電チャックと、厚さ方向に貫通するガス供給孔が設けられた導電性の冷却板とが接合された半導体製造装置用部材であって、
前記静電チャックのうち前記ウエハ載置面とは反対側の面から前記ウエハ載置面に向かって設けられた静電チャック側凹部及び前記冷却板のうち前記静電チャックと対向する対向面から該対向面とは反対側の面に向かって設けられた冷却板側凹部のうちの少なくとも一方で構成され、前記細孔及び前記ガス供給孔と連通するプラグ室と、
前記プラグ室に配置された多孔質で絶縁性の円柱部材である通気性プラグと、
前記通気性プラグの表面を、前記細孔に対向する部分を含み前記冷却板に直接は面しない細孔側表面と前記ガス供給孔に対向する部分を含むガス供給孔側表面とに分離するように、前記通気性プラグの表面に設けられた環状の緻密質層と、
前記緻密質層と前記プラグ室の壁面との間に充填された接着層と、
を備えた半導体製造装置用部材。 - 前記緻密質層は、耐熱樹脂膜である、
請求項1に記載の半導体製造装置用部材。 - 前記耐熱樹脂膜は、フッ素系樹脂膜又はポリイミド系樹脂膜である、
請求項2に記載の半導体製造装置用部材。 - 前記緻密質層は、溶射膜である、
請求項1に記載の半導体製造装置用部材。 - 前記溶射膜は、前記通気性プラグと同じ材質である、
請求項4に記載の半導体製造装置用部材。 - 前記プラグ室は、少なくとも前記静電チャック側凹部を有しており、
前記緻密質層は、前記通気性プラグの側面のうち前記静電チャック側凹部の壁面に面する位置に設けられている、請求項1〜5のいずれか1項に記載の半導体製造装置用部材。 - 前記プラグ室は、前記冷却板側凹部で構成されている、請求項1〜5のいずれか1項に記載の半導体製造装置用部材。
- 請求項1〜7のいずれか1項に記載の半導体製造装置用部材を製造する方法であって、(a)互いに接合する前の前記静電チャックと前記冷却板とを用意すると共に、前記プラグ室に配置される前で且つ前記緻密質層が設けられる前の前記通気性プラグを用意する工程と、
(b)前記通気性プラグに前記緻密質層を設けた後、前記通気性プラグの前記緻密質層に接着剤スラリーを塗布し、その後、前記通気性プラグを後にプラグ室になる所定の部位に配置して前記緻密質層と前記部位の壁面との間の前記接着剤スラリーを硬化させることにより前記接着層を形成する工程と、
(c)前記静電チャックと前記冷却板とを互いに接合する工程と、
を含む半導体製造装置用部材の製法。
Applications Claiming Priority (3)
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JP2017132363 | 2017-07-06 | ||
JP2017132363 | 2017-07-06 | ||
PCT/JP2018/022504 WO2019009028A1 (ja) | 2017-07-06 | 2018-06-13 | 半導体製造装置用部材及びその製法 |
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JPWO2019009028A1 JPWO2019009028A1 (ja) | 2019-07-04 |
JP6621548B2 true JP6621548B2 (ja) | 2019-12-18 |
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JP2018552259A Active JP6621548B2 (ja) | 2017-07-06 | 2018-06-13 | 半導体製造装置用部材及びその製法 |
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Country | Link |
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US (1) | US11424150B2 (ja) |
JP (1) | JP6621548B2 (ja) |
KR (1) | KR102438888B1 (ja) |
CN (1) | CN109891572B (ja) |
TW (1) | TWI744535B (ja) |
WO (1) | WO2019009028A1 (ja) |
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CN110767598A (zh) * | 2018-07-27 | 2020-02-07 | 北京北方华创微电子装备有限公司 | 卡盘装置及半导体加工设备 |
CN111668148A (zh) * | 2019-03-05 | 2020-09-15 | Toto株式会社 | 静电吸盘及处理装置 |
JP7433857B2 (ja) * | 2019-11-25 | 2024-02-20 | 京セラ株式会社 | 試料保持具 |
JP7394661B2 (ja) * | 2020-03-09 | 2023-12-08 | 東京エレクトロン株式会社 | 基板処理装置 |
KR20230026473A (ko) * | 2021-02-17 | 2023-02-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 다공성 플러그 본딩 |
JPWO2024009768A1 (ja) * | 2022-07-07 | 2024-01-11 |
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US20080254220A1 (en) * | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
EP1975986A4 (en) * | 2006-01-20 | 2013-09-11 | Tokyo Electron Ltd | PLASMA PROCESSING UNIT |
JP5449750B2 (ja) * | 2008-11-19 | 2014-03-19 | 株式会社日本セラテック | 静電チャックおよびその製造方法 |
US9228685B2 (en) * | 2010-12-09 | 2016-01-05 | Tokyo Electron Limited | Load lock device |
JP6005579B2 (ja) | 2012-04-27 | 2016-10-12 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP5956379B2 (ja) * | 2012-04-27 | 2016-07-27 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP5633766B2 (ja) * | 2013-03-29 | 2014-12-03 | Toto株式会社 | 静電チャック |
US9608550B2 (en) * | 2015-05-29 | 2017-03-28 | Lam Research Corporation | Lightup prevention using multi-layer ceramic fabrication techniques |
JP6865145B2 (ja) * | 2016-12-16 | 2021-04-28 | 日本特殊陶業株式会社 | 保持装置 |
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2018
- 2018-06-13 JP JP2018552259A patent/JP6621548B2/ja active Active
- 2018-06-13 CN CN201880004140.2A patent/CN109891572B/zh active Active
- 2018-06-13 WO PCT/JP2018/022504 patent/WO2019009028A1/ja active Application Filing
- 2018-06-13 KR KR1020197011052A patent/KR102438888B1/ko active IP Right Grant
- 2018-06-19 TW TW107120902A patent/TWI744535B/zh active
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2019
- 2019-04-23 US US16/391,636 patent/US11424150B2/en active Active
Also Published As
Publication number | Publication date |
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TWI744535B (zh) | 2021-11-01 |
KR20200019591A (ko) | 2020-02-24 |
CN109891572B (zh) | 2023-08-15 |
US20190252231A1 (en) | 2019-08-15 |
WO2019009028A1 (ja) | 2019-01-10 |
CN109891572A (zh) | 2019-06-14 |
KR102438888B1 (ko) | 2022-08-31 |
JPWO2019009028A1 (ja) | 2019-07-04 |
US11424150B2 (en) | 2022-08-23 |
TW201917816A (zh) | 2019-05-01 |
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