JP6613929B2 - Ag下地層付き金属部材、Ag下地層付き絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、Ag下地層付き金属部材の製造方法 - Google Patents
Ag下地層付き金属部材、Ag下地層付き絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、Ag下地層付き金属部材の製造方法 Download PDFInfo
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- JP6613929B2 JP6613929B2 JP2016017304A JP2016017304A JP6613929B2 JP 6613929 B2 JP6613929 B2 JP 6613929B2 JP 2016017304 A JP2016017304 A JP 2016017304A JP 2016017304 A JP2016017304 A JP 2016017304A JP 6613929 B2 JP6613929 B2 JP 6613929B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 98
- 239000002184 metal Substances 0.000 title claims description 98
- 239000004065 semiconductor Substances 0.000 title claims description 91
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
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- 229910000881 Cu alloy Inorganic materials 0.000 description 3
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- 150000002902 organometallic compounds Chemical class 0.000 description 3
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- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
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- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
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- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
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- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
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- JCTXKRPTIMZBJT-UHFFFAOYSA-N 2,2,4-trimethylpentane-1,3-diol Chemical compound CC(C)C(O)C(C)(C)CO JCTXKRPTIMZBJT-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
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- 235000010233 benzoic acid Nutrition 0.000 description 1
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- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 235000019260 propionic acid Nutrition 0.000 description 1
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
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- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
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- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H05K1/0203—Cooling of mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/03505—Sintering
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/03848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
- H01L2224/03901—Methods of manufacturing bonding areas involving a specific sequence of method steps with repetition of the same manufacturing step
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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Description
風力発電、電気自動車、ハイブリッド自動車等を制御するために用いられる大電力制御用のパワー半導体素子においては、発熱量が多いことから、これを搭載する基板としては、例えばAlN(窒化アルミ)、Al2O3(アルミナ)などのセラミックス基板からなる絶縁層と、この絶縁層の一方の面に導電性の優れた金属を配設して形成した回路層と、を備えた絶縁回路基板(パワーモジュール用基板)が、従来から広く用いられている。
また、セラミックス基板の他方の面に熱伝導性に優れた金属を配設して形成した金属層を備えたものも提供されている。そして、パワーモジュール用基板の金属層にヒートシンクが接合されており、半導体素子で発生した熱を、パワーモジュール用基板側に伝達し、ヒートシンクを介して外部へ放散する構成とされている。
最近では、環境保護の観点から、半導体素子等の電子部品と回路層、ヒートシンクと金属層と接合する際に用いられるはんだ材としては、例えばSn−Ag系、Sn−In系、若しくはSn−Ag−Cu系等の鉛フリーはんだが主流となっている。
また、銅又は銅合金からなる回路層及び金属層においては、溶融したはんだ材と銅とが反応して回路層の内部にはんだ材の成分が侵入し、回路層及び金属層の特性が劣化するおそれがあった。
このため、従来は、特許文献1に示すように、回路層及び金属層の表面にNiめっき膜を形成した上で、はんだ材によって半導体素子を実施していた。
また、例えば、特許文献3、4には、金属酸化物粒子と有機物からなる還元剤とを含む酸化物ペーストを用いて、半導体素子等の電子部品やヒートシンクを接合する技術が提案されている。
この特許文献5に記載された技術によれば、この場合、Ag下地層とAgペースト及び酸化銀ペーストの焼成体からなる接合層とによって十分な厚さを確保することができることから、半導体素子の破損や絶縁層における亀裂の発生を抑制することが可能となる。
ここで、特許文献5に記載されたように、ガラス含有Agペーストを用いてアルミニウム又は銅からなる回路層上にAg下地層を形成した後に、Agペースト及び酸化銀ペーストを用いて半導体素子及びヒートシンクを接合した場合には、例えば200℃以上の高温に達する冷熱サイクルが負荷された際に、Agペースト及び酸化銀ペーストの焼成体からなる接合層にクラックが生じて半導体素子及びヒートシンクが剥離してしまうおそれがあった。
このため、高温に達する冷熱サイクルが負荷された場合でも、接合層におけるクラックの発生を抑制することが可能なAg下地層付き金属部材が求められている。
まず、本発明の第1の実施形態について説明する。なお、本実施形態である半導体装置は、風力発電、電気自動車等の電気車両などを制御するために用いられる大電力制御用のパワー半導体素子が搭載されたパワーモジュールである。
図1に、本発明の第1実施形態であるパワーモジュール(半導体装置)1を示す。このパワーモジュール1は、Ag下地層30とパワーモジュール用基板10とを有するAg下地層付きパワーモジュール用基板(Ag下地層付き絶縁回路基板)50と、このAg下地層付パワーモジュール用基板50の一方の面(図1において上面)に接合層2を介して接合された半導体素子3と、を備えている。
このAg下地層30は、後述するように、ガラス成分を含むガラス含有Agペーストの焼成体とされている。このAg下地層30は、半導体素子3を接合する前の状態において、図1及び図2に示すように、回路層12側に形成されたガラス層31と、このガラス層31上に形成されたAg層32と、を備えている。
また、Ag層32の内部には、粒径が数ナノメートル程度の微細なガラス粒子(図示なし)が分散されている。
接合層2は、Ag粒子及び酸化銀粒子の少なくとも一方又は両方と有機物とを含む接合材の焼成体とされており、本実施形態においては、酸化銀粒子と有機物からなる還元剤とを含む酸化銀ペーストの焼成体とされている。すなわち、接合層2は、酸化銀が還元されたAgの焼成体とされているのである。ここで、酸化銀を還元することにより生成される粒子は、例えば粒径10nm〜1μmと非常に微細であることから、緻密なAgの焼成体からなる接合層2が形成されることになる。
まず、セラミックス基板11の一方の面に回路層12が形成されたパワーモジュール用基板10を準備し、このパワーモジュール用基板10の回路層12上にガラス含有Agペースト40を塗布する。なお、ガラス含有Agペースト40を塗布する際には、スクリーン印刷法、オフセット印刷法、感光性プロセス等の種々の手段を採用することができる。塗布厚さは、1μm以上30μm以下の範囲内とするとよい。本実施形態では、スクリーン印刷法によってガラス含有Agペースト40をパターン状に形成した。
このガラス含有Agペーストは、Ag粉末と、ガラス粉末と、樹脂と、溶剤と、分散剤と、を含有しており、Ag粉末とガラス粉末とからなる粉末成分の含有量が、ガラス含有Agペースト全体の60質量%以上90質量%以下とされており、残部が樹脂、溶剤、分散剤とされている。
また、このガラス含有Agペーストは、その粘度が10Pa・s以上500Pa・s以下、より好ましくは50Pa・s以上300Pa・s以下に調整されている。
ガラス粉末は、例えば、酸化鉛、酸化亜鉛、酸化ケイ素、酸化ホウ素、酸化リン及び酸化ビスマスのいずれか1種又は2種以上を含有しており、そのガラス転移温度が300℃以上450℃以下、軟化温度が600℃以下、結晶化温度が450℃以上とされている。本実施形態では、酸化鉛と酸化亜鉛と酸化ホウ素とからなり、平均粒径が0.5μmのガラス粉末を使用した。
また、Ag粉末の重量Aとガラス粉末の重量Gとの重量比A/Gは、80/20から99/1の範囲内に調整されており、本実施形態では、A/G=80/5とした。
樹脂は、ガラス含有Agペーストの粘度を調整するものであり、500℃以上で分解されるものが適している。本実施形態では、エチルセルロースを用いている。
また、本実施形態では、ジカルボン酸系の分散剤を添加している。なお、分散剤を添加することなくガラス含有Agペーストを構成してもよい。
次に、回路層12の一方の面にガラス含有Agペースト40を塗布した状態で、乾燥を行う。なお、この第1乾燥工程S02では、溶剤が十分乾燥するように、100℃以上150℃以下の温度で15分以上30分以下保持して乾燥処理を行う。乾燥時の雰囲気は、大気、真空、N2やAr等の不活性雰囲気で行うことができる。
次に、乾燥されたガラス含有Agペースト40の上にAgペースト42を塗布する。塗布厚さとしては、1μm以上30μm以下とするとよい。
なお、このAgペースト42は、上述のガラス含有Agペースト40からガラス成分を除去したものとされている。Agペースト42に用いられるAg粉末は、ガラス含有Agペースト40で用いるAg粉末と同じ粒径であることが好ましい。同じ粒径のAg粉末を用いることによって、後述する焼成工程においてAg粉末を良好に焼結させることができる。
次に、ガラス含有Agペースト40に積層するようにAgペースト42を塗布した状態で、乾燥を行う。なお、この第2乾燥工程S04では、溶剤が十分乾燥するように、100℃以上150℃以下の温度で15分以上30分以下保持して乾燥処理を行う。乾燥時の雰囲気は、大気、真空、N2やAr等の不活性雰囲気で行うことができる。
ここで、乾燥後のガラス含有Agペースト40の厚さt1とAgペースト42の厚さt2の比t1/t2が0.2以上5.0以下の範囲内とされていることが好ましい。
次に、回路層12の一方の面にガラス含有Agペースト40及びAgペースト42を積層した状態で、加熱炉71内に装入して加熱処理を行い、ガラス含有Agペースト40の焼成を行う。なお、このときの焼成温度は、例えば、350℃以上645℃以下に設定されている。この焼成工程S52により、ガラス層31とAg層32とを備えたAg下地層30が形成される。また、Ag下地層30のAg層32側の表面におけるボイドの面積率が25%以下とされる。
さらに、Ag層32の内部に、粒径が数マイクロメートル程度のガラス粒子が分散されることになる。このガラス粒子は、Ag粒子の焼結が進行していく過程で、残存したガラス成分が凝集したものと推測される。
次に、Ag下地層30の表面に、接合層2となる接合材として、Ag及び酸化銀の一方又は両方と有機物とを含む接合材45を塗布する。本実施形態では、接合材として酸化銀ペーストを用いている。
なお、酸化銀ペーストを塗布する際には、スクリーン印刷法、オフセット印刷法、感光性プロセス等の種々の手段を採用することができる。本実施形態では、スクリーン印刷法によって酸化銀ペースト45を印刷した。
この酸化銀ペーストは、酸化銀粉末(酸化銀粒子)と、還元剤と、樹脂と、溶剤と、を含有しており、本実施形態では、これらに加えて有機金属化合物粉末を含有している。
酸化銀粉末の含有量が酸化銀ペースト全体の60mass%以上92mass%以下とされ、還元剤の含有量が酸化銀ペースト全体の5mass%以上20mass%以下とされ、有機金属化合物粉末の含有量が酸化銀ペースト全体の0mass%以上10mass%以下とされており、残部が溶剤とされている。この酸化銀ペーストにおいては、焼結によって得られる接合層2に未反応の有機物が残存することを抑制するために、分散剤及び樹脂は添加していない。
有機金属化合物は、熱分解によって生成する有機酸によって酸化銀の還元反応や有機物の分解反応を促進させる作用を有するものであり、例えば蟻酸Ag、酢酸Ag、プロピオン酸Ag、安息香酸Ag、シュウ酸Agなどのカルボン酸系金属塩等が適用される。
なお、この酸化銀ペーストは、その粘度が10Pa・s以上500Pa・s以下、より好ましくは50Pa・s以上300Pa・s以下に調整されている。
次に、接合材(酸化銀ペースト)45を塗布した状態で乾燥(例えば、室温、大気雰囲気で24時間保管)した後、接合材45の上に半導体素子3を積層し、半導体素子3とAg下地層付きパワーモジュール用基板50とを積層した状態で加熱炉72内に装入し、接合材(酸化銀ペースト)45の焼成を行い、接合層2を形成して半導体素子3を接合する。
この半導体素子接合工程S07においては、半導体素子3とAg下地層付きパワーモジュール用基板50とを積層方向に加圧した状態で加熱することによって、より確実に接合することができる。この場合、積層方向の加圧圧力は0.5〜10MPaとすることが望ましい。
次に、本発明の第2の実施形態について、図5から図8を参照して説明する。
図5に、本発明の第2実施形態である半導体装置101を示す。この半導体装置101は、ヒートシンク付きパワーモジュール用基板(ヒートシンク付き絶縁回路基板)160と、ヒートシンク付きパワーモジュール用基板160の一方の面(図5において上面)側に第1接合層102を介して接合された半導体素子103と、を備えている。
また、ヒートシンク付きパワーモジュール用基板160は、Ag下地層付きパワーモジュール用基板150と、このAg下地層付きパワーモジュール用基板150の他方の面(図5において下面)側に第2接合層105を介して接合されたヒートシンク161と、を備えている。
また、ヒートシンク161のうち金属層113と接合される領域には、第3Ag下地層130cが形成されている。
そして、本実施形態においては、第1Ag下地層130a、第2Ag下地層130b、第3Ag下地層130cのうちAg層側表面におけるボイドの面積率が25%以下とされている。
まず、セラミックス基板111の一方の面に回路層112が形成され、セラミックス基板111の他方の面に金属層113が形成されたパワーモジュール用基板110を準備し、このパワーモジュール用基板110の回路層112にガラス含有Agペースト40を塗布するとともに、金属層113にガラス含有Agペースト40を塗布する。塗布厚さとしては、1μm以上30μm以下とするとよい。
さらに、ヒートシンク161のうち金属層113と接合される接合面に、ガラス含有Agペースト40を塗布する。
次に、回路層112、金属層113及びヒートシンク161にガラス含有Agペースト40を塗布した状態で、乾燥を行う。
次に、乾燥されたガラス含有Agペースト40の上にAgペースト42を塗布する。
なお、このAgペースト42は、上述のガラス含有Agペースト40からガラス成分を除去したものとされている。Agペースト42に用いられるAg粉末は、ガラス含有Agペースト40で用いるAg粉末と同じ粒径であることが好ましい。同じ粒径のAg粉末を用いることによって、後述する焼成工程においてAg粉末を良好に焼結させることができる。
次に、ガラス含有Agペースト40に積層するようにAgペースト42を塗布した状態で、乾燥を行う。
ここで、乾燥後のガラス含有Agペースト40の厚さt1とAgペースト42の厚さt2の比t1/t2が0.2以上 5.0以下の範囲内とされていることが好ましい。
次に、ガラス含有Agペースト40及びAgペースト42を積層した状態で、加熱炉171,172内に装入して加熱処理を行い、ガラス含有Agペースト40及びAgペースト42の焼成を行う。なお、このときの焼成温度は、例えば、350℃〜645℃に設定されている。
この焼成工程S105により、ガラス層とAg層とを備えた第1Ag下地層130a、第2Ag下地層130b、第3Ag下地層130cが形成される。
また、第1Ag下地層130a、第2Ag下地層130b、第3Ag下地層130cのうちAg層側表面におけるボイドの面積率が25%以下とされる。
次に、第1Ag下地層130aの表面に、第1接合層102となる接合材として、Ag及び酸化銀の一方又は両方と有機物とを含む接合材45を塗布するとともに、第2Ag下地層130bの表面に、第2接合層105となる接合材として、Ag及び酸化銀の一方又は両方と有機物とを含む接合材45を塗布する。なお、本実施形態では、接合材として酸化銀ペーストを用いている。
次に、接合材(酸化銀ペースト)45を塗布した状態で乾燥(例えば、室温、大気雰囲気で24時間保管)した後、第1Ag下地層130aに塗布された接合材45に半導体素子103を積層するとともに、第2Ag下地層130bに塗布された接合材45にヒートシンク161を積層する。このとき、ヒートシンク161に形成された第3Ag下地層130cが接合材45側を向くように配置する。
例えば、回路層を構成する金属板を純度99.99mass%の純アルミニウム(4Nアルミニウム)の圧延板、あるいは、無酸素銅の圧延板としたものとして説明したが、これに限定されることはなく、他のアルミニウム又はアルミニウム合金、銅又は銅合金で構成されたものとしてもよい。さらには、銅板とアルミニウム板とを固相拡散接合した構造のものとしてもよい。
さらに、ヒートシンクと金属層との間に、緩衝層を設けても良い。緩衝層としては、アルミニウム又はアルミニウム合金若しくはアルミニウムを含む複合材(例えばAlSiC等)からなる板材を用いることができる。
例えば、図9に示すように、LED素子(半導体素子)を搭載したLED装置(半導体装置)であってもよい。
なお、金属板がアルミニウム板の場合には、接合材としてAl−Si系ろう材を用いた。また、金属板が銅板の場合には、接合材として活性金属ろう材(Ag−Cu−Tiろう材)を用いた。
なお、ガラス含有Agペーストのガラス粉末として、Bi2O3を90.6質量%、ZnOを2.6質量%、B2O3を6.8質量%、を含む無鉛ガラス粉末を用いた。また、樹脂としてエチルセルロースを、溶剤としてジエチレンクリコールジブチルエーテルを用いた。さらに、ジカルボン酸系の分散剤を添加した。Ag粉末は粒径0.8μmの粉末を用いた。
また、Agペーストとしては、上述のガラス含有Agペーストからガラス粉末を除去したものを用いた。
なお、ガラス含有Agペーストの塗布量及びAgペーストの塗布量は表1記載の通りとした。
以上のようにして、本発明例のAg下地層付きパワーモジュール用基板を得た。
ここで、酸化銀ペーストの焼成条件は、窒素雰囲気、焼成温度300℃、焼成時間10分、加圧圧力5MPaとした。
また、酸化銀ペーストとして、市販の酸化銀粉末(和光純薬工業株式会社製)と、還元剤としてミリスチルアルコールと、溶剤として2,2,4−トリメチル−1,3−ペンタンジオールモノ(2−メチルプロパノエート)と、を用いて、酸化銀粉末;80質量%、還元剤(ミリスチルアルコール);10質量%、溶剤(2,2,4−トリメチル−1,3−ペンタンジオールモノ(2−メチルプロパノエート));残部、の割合で混合したものを用いた。
なお、ガラス含有Agペーストの塗布量は表1記載の通りとした。
本発明例及び比較例において、形成されたAg下地層のAg層側表面をレーザ顕微鏡(株式会社キーエンス製VKX−200)によって観察し、得られた画像をレーザ顕微鏡付属のソフトウェアで2値化処理し、黒色部をボイドと判定してボイドの面積率を以下の式で求めた。
ボイドの面積率(%)=黒色部(ボイド)面積/Ag下地層全体の面積×100
なお、本発明例及び比較例におけるAg下地層のAg層側表面のレーザ顕微鏡観察写真を図10に示す。図10(a−1)が比較例1の観察写真、(a−2)が(a−1)の2値化処理後の画像、図10(b−1)が本発明例3の観察写真、(b−2)が(b−1)の2値化処理後の画像である。
上述の本発明例及び比較例の半導体装置について、超音波探傷装置を用いて、以下の式から半導体素子と回路層との接合率を求めた。ここで、初期接合面積とは、接合前における接合すべき面積、すなわち半導体素子面積とした。超音波探傷像において剥離は接合部内の白色部で示されることから、この白色部の面積を剥離面積とした。
(接合率)={(初期接合面積)−(剥離面積)}/(初期接合面積)×100
なお、半導体装置に、気相にて冷熱サイクル試験を行い、初期の接合率と冷熱サイクル試験後の接合率とを比較した。冷熱サイクルは、−40℃×15分←→200℃×15分、3000サイクルとした。評価結果を表1に示す。
以上のことから、本発明例によれば、比較的高温環境下で使用された場合でも、接合層におけるクラックの進展を抑制でき、被接合体と強固に接合することが可能なAg下地層付き金属部材を提供することが可能である。
3,103 半導体素子
10,110 パワーモジュール用基板(絶縁回路基板)
11,111 セラミックス基板(絶縁層)
12,112,212 回路層
30,130a,130b,130c,230 Ag下地層
31 ガラス層
32 Ag層
50,150 Ag下地層付きパワーモジュール用基板(Ag下地層付き絶縁回路基板)
113 金属層
160 ヒートシンク付きパワーモジュール用基板(ヒートシンク付き絶縁回路基板)
161 ヒートシンク
Claims (6)
- 被接合体と接合される金属部材と、この金属部材の前記被接合体との接合面に形成されたAg下地層と、を備えたAg下地層付き金属部材であって、
前記Ag下地層は、前記金属部材側に形成されたガラス層と、このガラス層に積層形成されたAg層とからなり、
前記Ag下地層の前記Ag層側表面におけるボイドの面積率が25%以下とされていることを特徴とするAg下地層付き金属部材。 - 絶縁層と、この絶縁層の一方の面に配設された回路層と、前記回路層のうち前記絶縁層とは反対側の面に形成されたAg下地層と、を備えたAg下地層付き絶縁回路基板であって、
前記回路層及び前記Ag下地層が請求項1に記載のAg下地層付き金属部材とされており、
前記Ag下地層の前記Ag層側表面におけるボイドの面積率が25%以下とされていることを特徴とするAg下地層付き絶縁回路基板。 - 絶縁層と、この絶縁層の一方の面に配設された回路層と、前記絶縁層の他方の面に配設された金属層と、前記金属層のうち前記絶縁層とは反対側の面に形成されたAg下地層と、を備えたAg下地層付き絶縁回路基板であって、
前記回路層及び前記Ag下地層が請求項1に記載のAg下地層付き金属部材とされており、
前記Ag下地層の前記Ag層側表面におけるボイドの面積率が25%以下とされていることを特徴とするAg下地層付き絶縁回路基板。 - 請求項2に記載のAg下地層付き絶縁回路基板と、前記回路層の前記Ag下地層に接合された半導体素子と、を備えた半導体装置であって、
前記半導体素子と前記Ag下地層は、Ag及び酸化銀の一方又は両方と有機物とを含む接合材の焼成体からなる接合層を介して接合されていることを特徴とする半導体装置。 - 請求項3に記載のAg下地層付き絶縁回路基板と、前記金属層の前記Ag下地層に接合されたヒートシンクと、を備えたヒートシンク付き絶縁回路基板であって、
前記ヒートシンクと前記Ag下地層は、Ag及び酸化銀の一方又は両方と有機物とを含む接合材の焼成体からなる接合層を介して接合されていることを特徴とするヒートシンク付き絶縁回路基板。 - 請求項1に記載のAg下地層付き金属部材の製造方法であって、
前記金属部材のうち前記被接合体が接合される接合面に、ガラス成分を含有するガラス含有Agペーストを塗布するガラス含有Agペースト塗布工程と、
塗布したガラス含有Agペーストを乾燥させる第1乾燥工程と、
乾燥後の前記ガラス含有Agペーストの上にAgペーストを塗布するAgペースト塗布工程と、
塗布したAgペーストを乾燥させる第2乾燥工程と、
乾燥後の前記ガラス含有Agペースト及び前記Agペーストを焼成し、ガラス層及びAg層を有するAg下地層を形成するとともに、前記Ag下地層の前記Ag層側表面におけるボイドの面積率を25%以下とする焼成工程と、
を備えていることを特徴とするAg下地層付き金属部材の製造方法。
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PCT/JP2017/002678 WO2017135139A1 (ja) | 2016-02-01 | 2017-01-26 | Ag下地層付き金属部材、Ag下地層付き絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、Ag下地層付き金属部材の製造方法 |
KR1020187023928A KR20180107163A (ko) | 2016-02-01 | 2017-01-26 | Ag 하지층이 형성된 금속 부재, Ag 하지층이 형성된 절연 회로 기판, 반도체 장치, 히트 싱크가 부착된 절연 회로 기판, 및 Ag 하지층이 형성된 금속 부재의 제조 방법 |
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