JP6598504B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6598504B2 JP6598504B2 JP2015095228A JP2015095228A JP6598504B2 JP 6598504 B2 JP6598504 B2 JP 6598504B2 JP 2015095228 A JP2015095228 A JP 2015095228A JP 2015095228 A JP2015095228 A JP 2015095228A JP 6598504 B2 JP6598504 B2 JP 6598504B2
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- 239000004065 semiconductor Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000004020 conductor Substances 0.000 claims description 142
- 238000010438 heat treatment Methods 0.000 claims description 50
- 230000001681 protective effect Effects 0.000 claims description 48
- 229910052739 hydrogen Inorganic materials 0.000 claims description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 239000001257 hydrogen Substances 0.000 claims description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000035699 permeability Effects 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 16
- 239000010936 titanium Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 230000002950 deficient Effects 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910016570 AlCu Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000012217 deletion Methods 0.000 description 3
- 230000037430 deletion Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Description
Claims (9)
- 半導体基板の上にアルミニウムを含む材料で導電体パターンを形成する工程と、
前記導電体パターンの上に水素を含有する絶縁膜を形成する工程と、
前記半導体基板、前記導電体パターンおよび前記絶縁膜を含む構造体に水素含有雰囲気中で第1熱処理を行う工程と、
前記第1熱処理の後に、前記絶縁膜の上に、水素の透過性が前記絶縁膜より低い保護膜を、前記半導体基板と前記保護膜との間に前記絶縁膜が配されるように形成する工程と、
前記保護膜の形成後に、前記半導体基板、前記導電体パターン、前記絶縁膜および前記保護膜を含む構造体に水素含有雰囲気中で第2熱処理を行う工程と、を含み、
前記第1熱処理の温度は、前記絶縁膜を形成する際の温度以上であり、前記保護膜を形成する際の温度以下である、
ことを特徴とする半導体装置の製造方法。 - 前記絶縁膜は、プラズマCVD法で形成される、
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記絶縁膜は、酸化シリコン膜である、
ことを特徴とする請求項1又は2に記載の半導体装置の製造方法。 - 前記保護膜は、プラズマCVD法で形成される、
ことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。 - 前記保護膜は、窒化シリコン膜である、
ことを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。 - 前記第1熱処理の後であって前記保護膜の形成前に、少なくとも1回の積層工程を含み、前記積層工程は、追加の導電体パターン、および、前記追加の導電体パターンを覆う追加の絶縁膜を形成する工程を含み、
前記積層工程を実施する度に水素含有雰囲気中で追加の熱処理が実施され、
前記追加の熱処理の温度は、前記絶縁膜および前記追加の絶縁膜を形成する際の温度以上であり、前記保護膜を形成する際の温度以下である、
ことを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置の製造方法。 - 前記導電体パターンを形成する工程は、アルミニウムを含む材料で膜を形成した後にハードマスクを形成し、前記ハードマスクを使って前記膜をパターニングする工程を含む、
ことを特徴とする請求項1乃至6のいずれか1項に記載の半導体装置の製造方法。 - 前記半導体基板の上には、前記導電体パターンを含む複数の導電体パターンが、複数の配線層を構成するように配置され、
前記複数の導電体パターンのうち前記半導体基板に最も近い導電体パターンの上面と前記保護膜の下面との距離が、400nm〜3000nmの範囲内である、
ことを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置の製造方法。 - 前記導電体パターンを形成する工程では、前記半導体基板としての、光電変換部を有する半導体基板の上に前記導電体パターンを形成する、
ことを特徴とする請求項1乃至8のいずれか1項に記載の半導体装置の製造方法。
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JP2015095228A JP6598504B2 (ja) | 2015-05-07 | 2015-05-07 | 半導体装置の製造方法 |
US15/139,569 US9673253B2 (en) | 2015-05-07 | 2016-04-27 | Method of manufacturing photoelectric conversion device |
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JP2015095228A JP6598504B2 (ja) | 2015-05-07 | 2015-05-07 | 半導体装置の製造方法 |
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JP2016213305A JP2016213305A (ja) | 2016-12-15 |
JP2016213305A5 JP2016213305A5 (ja) | 2018-06-14 |
JP6598504B2 true JP6598504B2 (ja) | 2019-10-30 |
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JP2015095228A Expired - Fee Related JP6598504B2 (ja) | 2015-05-07 | 2015-05-07 | 半導体装置の製造方法 |
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US (1) | US9673253B2 (ja) |
JP (1) | JP6598504B2 (ja) |
Families Citing this family (4)
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KR102427639B1 (ko) * | 2017-11-13 | 2022-08-01 | 삼성전자주식회사 | 이미지 센싱 소자 |
KR102563922B1 (ko) | 2018-09-10 | 2023-08-04 | 삼성전자 주식회사 | 메모리 소자의 제조 방법 |
JP7381223B2 (ja) | 2019-05-27 | 2023-11-15 | キヤノン株式会社 | 光電変換装置 |
US11443980B2 (en) * | 2019-09-27 | 2022-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating semiconductor device with metal pad extending into top metal layer |
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JP3149169B2 (ja) | 1989-11-07 | 2001-03-26 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
KR20030040865A (ko) | 2001-11-16 | 2003-05-23 | 주식회사 하이닉스반도체 | 암전류를 감소시키기 위한 이미지센서의 제조 방법 |
JP2003188368A (ja) * | 2001-12-14 | 2003-07-04 | Sony Corp | 固体撮像装置の製造方法 |
JP2004363375A (ja) * | 2003-06-05 | 2004-12-24 | Renesas Technology Corp | 固体撮像素子 |
JP4916895B2 (ja) | 2007-01-12 | 2012-04-18 | シャープ株式会社 | 半導体装置の製造方法および半導体装置 |
JP4137161B1 (ja) * | 2007-02-23 | 2008-08-20 | キヤノン株式会社 | 光電変換装置の製造方法 |
KR100875163B1 (ko) * | 2007-06-26 | 2008-12-22 | 주식회사 동부하이텍 | 수직형 씨모스 이미지 센서 제조 방법 |
JP2009059824A (ja) * | 2007-08-30 | 2009-03-19 | Sharp Corp | 固体撮像素子およびその製造方法、電子情報機器 |
JP6164830B2 (ja) * | 2012-12-14 | 2017-07-19 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP6278608B2 (ja) * | 2013-04-08 | 2018-02-14 | キヤノン株式会社 | 半導体装置およびその製造方法 |
JP2015109343A (ja) * | 2013-12-04 | 2015-06-11 | キヤノン株式会社 | 半導体装置の製造方法 |
JP6282109B2 (ja) * | 2013-12-26 | 2018-02-21 | キヤノン株式会社 | 撮像装置の製造方法および撮像装置 |
JP6346488B2 (ja) * | 2014-04-21 | 2018-06-20 | キヤノン株式会社 | 半導体装置、固体撮像装置、それらの製造方法およびカメラ |
KR102380829B1 (ko) * | 2014-04-23 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
JP6368177B2 (ja) | 2014-07-07 | 2018-08-01 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
JP6346826B2 (ja) * | 2014-08-06 | 2018-06-20 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US9379194B2 (en) * | 2014-11-09 | 2016-06-28 | Tower Semiconductor Ltd. | Floating gate NVM with low-moisture-content oxide cap layer |
JP2016207831A (ja) * | 2015-04-22 | 2016-12-08 | キヤノン株式会社 | 光電変換装置の製造方法 |
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US9673253B2 (en) | 2017-06-06 |
US20160329374A1 (en) | 2016-11-10 |
JP2016213305A (ja) | 2016-12-15 |
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