JP6595325B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6595325B2 JP6595325B2 JP2015237927A JP2015237927A JP6595325B2 JP 6595325 B2 JP6595325 B2 JP 6595325B2 JP 2015237927 A JP2015237927 A JP 2015237927A JP 2015237927 A JP2015237927 A JP 2015237927A JP 6595325 B2 JP6595325 B2 JP 6595325B2
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- 239000004065 semiconductor Substances 0.000 title claims description 141
- 238000007789 sealing Methods 0.000 claims description 132
- 239000000463 material Substances 0.000 claims description 21
- 239000004519 grease Substances 0.000 description 57
- 238000009413 insulation Methods 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 7
- 230000001771 impaired effect Effects 0.000 description 6
- 239000007769 metal material Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L23/367—Cooling facilitated by shape of device
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/331—Disposition
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Description
12:第1半導体素子
14:第2半導体素子
20:封止体
21:封止体の正面
22:封止体の背面
23:封止体の上面
23a、123a、223a:第1傾斜面
23b、123b、223b:第2傾斜面
23c:境界線
23e:封止体の周縁
25:封止体の右側面
26:封止体の左側面
32、34:第1放熱部材
36、38:第2放熱部材
62:第1信号端子
64:第2信号端子
72:第1突出部
74:第2突出部
100:電力変換装置
104:冷却器
110:グリス
L:沿面最短経路
Claims (3)
- 第1半導体素子と、
前記第1半導体素子と電気的に直列に接続された第2半導体素子と、
前記第1半導体素子及び前記第2半導体素子を封止する封止体と、
前記封止体の正面に露出しているとともに、前記封止体を構成する材料よりも熱伝導率の高い材料で構成された第1放熱部材と、
前記封止体の前記正面とは反対側に位置する背面に露出しているとともに、前記封止体を構成する前記材料よりも熱伝導率の高い材料で構成された第2放熱部材と、
前記第1半導体素子と電気的に接続されているとともに、前記封止体の前記正面及び前記背面と隣り合う上面から第1方向に沿って突出する少なくとも一つの第1信号端子と、
前記第2半導体素子と電気的に接続されているとともに、前記封止体の前記上面から前記第1方向に沿って突出する少なくとも一つの第2信号端子と、を備え、
前記封止体の前記上面は、第1傾斜面と、第2傾斜面と、前記第1傾斜面と前記第2傾斜面との間に位置する境界線又は境界範囲とを有し、
前記境界線又は前記境界範囲は、前記第1信号端子と前記第2信号端子との間の沿面最短経路の少なくとも一部を含み、
前記封止体は、前記正面、前記背面及び前記上面と隣り合う右側面と、前記正面、前記背面及び前記上面と隣り合うとともに前記右側面の反対側に位置する左側面とをさらに有し、
前記第1方向を鉛直上方に向けたときに、前記第1傾斜面は、前記境界線又は前記境界範囲から前記右側面に向かって鉛直下方に傾斜し、前記第2傾斜面は、前記境界線又は前記境界範囲から前記左側面に向かって鉛直下方に傾斜する、
半導体装置。 - 前記第1傾斜面は、前記境界線又は前記境界範囲から前記右側面まで連続しており、
前記第2傾斜面は、前記境界線又は前記境界範囲から前記左側面まで連続している、請求項1に記載の半導体装置。 - 前記封止体の前記上面は、前記少なくとも一つの第1信号端子に沿って突出する第1突出部と、前記少なくとも一つの第2信号端子に沿って突出する第2突出部とをさらに有する、請求項1又は2に記載の半導体装置。
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JP2015237927A JP6595325B2 (ja) | 2015-12-04 | 2015-12-04 | 半導体装置 |
US15/367,386 US10157815B2 (en) | 2015-12-04 | 2016-12-02 | Semiconductor device |
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JP2015237927A JP6595325B2 (ja) | 2015-12-04 | 2015-12-04 | 半導体装置 |
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JP2017103433A JP2017103433A (ja) | 2017-06-08 |
JP6595325B2 true JP6595325B2 (ja) | 2019-10-23 |
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JP (1) | JP6595325B2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US11502014B2 (en) * | 2018-09-19 | 2022-11-15 | Rohm Co., Ltd. | Semiconductor device |
JP7286582B2 (ja) * | 2020-03-24 | 2023-06-05 | 株式会社東芝 | 半導体装置 |
JP7484700B2 (ja) | 2020-12-23 | 2024-05-16 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
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JP4158738B2 (ja) * | 2004-04-20 | 2008-10-01 | 株式会社デンソー | 半導体モジュール実装構造、カード状半導体モジュール及びカード状半導体モジュール密着用受熱部材 |
JP2007073743A (ja) * | 2005-09-07 | 2007-03-22 | Denso Corp | 半導体装置 |
JP5076549B2 (ja) | 2007-02-23 | 2012-11-21 | 株式会社デンソー | 半導体装置 |
US8497572B2 (en) * | 2010-07-05 | 2013-07-30 | Denso Corporation | Semiconductor module and method of manufacturing the same |
JP2015095560A (ja) | 2013-11-12 | 2015-05-18 | 株式会社デンソー | パワーモジュール |
JP6154342B2 (ja) * | 2013-12-06 | 2017-06-28 | トヨタ自動車株式会社 | 半導体装置 |
JP6256145B2 (ja) * | 2014-03-26 | 2018-01-10 | 株式会社デンソー | 半導体装置及びその製造方法 |
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US20170162462A1 (en) | 2017-06-08 |
US10157815B2 (en) | 2018-12-18 |
JP2017103433A (ja) | 2017-06-08 |
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