JP6586036B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6586036B2 JP6586036B2 JP2016051543A JP2016051543A JP6586036B2 JP 6586036 B2 JP6586036 B2 JP 6586036B2 JP 2016051543 A JP2016051543 A JP 2016051543A JP 2016051543 A JP2016051543 A JP 2016051543A JP 6586036 B2 JP6586036 B2 JP 6586036B2
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- semiconductor chip
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- connection electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/48147—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
第1半導体チップ上の接続電極とをワイヤにて接続し、矩形状の第1接着層と、第1接着
層の四隅に位置し第1接着層における2対の対辺のうち少なくとも1対の対辺のそれぞれ
の下部に開口部が形成された柱状の第2接着層と、を有する接着部をフィルム状の絶縁材
料の接着剤をスタンプすることで形成し、接着部を第2接着層の一部がワイヤ及び接続端
子に接触し、接続電極とは接触しないように第1半導体チップの上に設け、接着部の上に
第2半導体チップを設け、接着部と第1半導体チップとの間を含む領域をモールド材で封
止し、ワイヤの接続電極からの最大高さが接続電極と第1接着層との間隔よりも小さくな
る。
以下、図を用いて開口部22cの配置や大きさの違いによる、いくつかの変形例を示す。以下、図中において、図1乃至図3と同じ符号は同じものを示す符号であるので、詳しい説明は省略する。
Claims (2)
- 接続端子を有する基板上に第1半導体チップを設け、
前記接続端子と、前記第1半導体チップ上の接続電極とをワイヤにて接続し、
矩形状の第1接着層と、前記第1接着層の四隅に位置し前記第1接着層における2対の
対辺のうち少なくとも1対の対辺のそれぞれの下部に開口部が形成された柱状の第2接着
層と、を有する接着部をフィルム状の絶縁材料の接着剤をスタンプすることで形成し、
前記接着部を、前記第2接着層の一部が前記ワイヤ及び前記接続端子に接触し、前記接
続電極とは接触しないように前記第1半導体チップの上に設け、
前記接着部の上に第2半導体チップを設け、
前記接着部と前記第1半導体チップとの間を含む領域をモールド材で封止し、
前記ワイヤの前記接続電極からの最大高さが前記接続電極と前記第1接着層との間隔よ
りも小さくなる、半導体装置の製造方法。 - 接続端子を有する基板上に第1半導体チップを設け、
前記接続端子と、前記第1半導体チップ上の接続電極とをワイヤにて接続し、
矩形状の第1接着層と、前記第1接着層の四隅に位置し前記第1接着層における2対の
対辺のうち少なくとも1対の対辺のそれぞれの下部に開口部が形成された柱状の第2接着
層と、を有する接着部をフィルム状の接着剤をブレード加工により必要な箇所だけ薄膜化
することで形成し、
前記接着部を、前記第2接着層の一部が前記ワイヤ及び前記接続端子に接触し、前記接
続電極とは接触しないように前記第1半導体チップの上に設け、
前記接着部の上に第2半導体チップを設け、
前記接着部と前記第1半導体チップとの間を含む領域をモールド材で封止し、
前記ワイヤの前記接続電極からの最大高さが前記接続電極と前記第1接着層との間隔よ
りも小さくなる、半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016051543A JP6586036B2 (ja) | 2016-03-15 | 2016-03-15 | 半導体装置の製造方法 |
TW106104226A TWI621232B (zh) | 2016-03-15 | 2017-02-09 | Semiconductor device |
CN201710133212.0A CN107195589B (zh) | 2016-03-15 | 2017-03-08 | 半导体装置 |
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JP2016051543A JP6586036B2 (ja) | 2016-03-15 | 2016-03-15 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017168586A JP2017168586A (ja) | 2017-09-21 |
JP6586036B2 true JP6586036B2 (ja) | 2019-10-02 |
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JP2016051543A Active JP6586036B2 (ja) | 2016-03-15 | 2016-03-15 | 半導体装置の製造方法 |
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JP (1) | JP6586036B2 (ja) |
CN (1) | CN107195589B (ja) |
TW (1) | TWI621232B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7042713B2 (ja) * | 2018-07-12 | 2022-03-28 | キオクシア株式会社 | 半導体装置 |
JP2020021908A (ja) | 2018-08-03 | 2020-02-06 | キオクシア株式会社 | 半導体装置およびその製造方法 |
JP2020038902A (ja) | 2018-09-04 | 2020-03-12 | キオクシア株式会社 | 半導体装置 |
TWI665770B (zh) * | 2018-12-13 | 2019-07-11 | 力成科技股份有限公司 | 半導體封裝結構及其製法 |
JP2020155559A (ja) | 2019-03-19 | 2020-09-24 | キオクシア株式会社 | 半導体装置 |
WO2020218530A1 (ja) * | 2019-04-25 | 2020-10-29 | 日立化成株式会社 | ドルメン構造を有する半導体装置の製造方法及び支持片の製造方法 |
JP2022097769A (ja) * | 2019-04-25 | 2022-07-01 | 昭和電工マテリアルズ株式会社 | ドルメン構造を有する半導体装置の製造方法及び支持片の製造方法 |
JP2021015922A (ja) * | 2019-07-16 | 2021-02-12 | キオクシア株式会社 | 半導体装置およびその製造方法 |
JP2021044362A (ja) * | 2019-09-10 | 2021-03-18 | キオクシア株式会社 | 半導体装置 |
JP2022113250A (ja) | 2021-01-25 | 2022-08-04 | キオクシア株式会社 | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2002033022A (ja) * | 2000-07-13 | 2002-01-31 | Mitsui Takeda Chemicals Inc | 導電性多層構造樹脂粒子およびそれを用いた異方導電性接着剤 |
JP2002222889A (ja) * | 2001-01-24 | 2002-08-09 | Nec Kyushu Ltd | 半導体装置及びその製造方法 |
TWI326910B (en) * | 2003-03-31 | 2010-07-01 | Sanyo Electric Co | Semiconductor module and method for making same |
JP4160083B2 (ja) * | 2006-04-11 | 2008-10-01 | シャープ株式会社 | 光学装置用モジュール及び光学装置用モジュールの製造方法 |
TWI435419B (zh) * | 2010-02-15 | 2014-04-21 | Toshiba Kk | 半導體記憶裝置及其製造方法 |
JP5857355B2 (ja) * | 2010-09-16 | 2016-02-10 | Shマテリアル株式会社 | 半導体発光素子搭載用基板、及びそれを用いた半導体発光装置 |
JP2015176906A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
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2016
- 2016-03-15 JP JP2016051543A patent/JP6586036B2/ja active Active
-
2017
- 2017-02-09 TW TW106104226A patent/TWI621232B/zh active
- 2017-03-08 CN CN201710133212.0A patent/CN107195589B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017168586A (ja) | 2017-09-21 |
TWI621232B (zh) | 2018-04-11 |
CN107195589A (zh) | 2017-09-22 |
TW201803063A (zh) | 2018-01-16 |
CN107195589B (zh) | 2021-03-16 |
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