JP6582059B2 - アライナ構造及びアライン方法 - Google Patents
アライナ構造及びアライン方法 Download PDFInfo
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- JP6582059B2 JP6582059B2 JP2017551043A JP2017551043A JP6582059B2 JP 6582059 B2 JP6582059 B2 JP 6582059B2 JP 2017551043 A JP2017551043 A JP 2017551043A JP 2017551043 A JP2017551043 A JP 2017551043A JP 6582059 B2 JP6582059 B2 JP 6582059B2
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- 238000000034 method Methods 0.000 title claims description 67
- 239000000758 substrate Substances 0.000 claims description 211
- 238000010168 coupling process Methods 0.000 claims description 25
- 230000008878 coupling Effects 0.000 claims description 22
- 238000005859 coupling reaction Methods 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 description 23
- 238000000151 deposition Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000005019 vapor deposition process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67715—Changing the direction of the conveying path
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (7)
- 基板(S)及びマスク(M)がそれぞれ垂直状態でプロセスチャンバ(10)に移送され、基板(S)及びマスク(M)が移送及び密着された後に基板処理を行う基板処理装置において、
プロセスチャンバ(10)に設けられマスク(M)をクランプするマスククランプ部(100)と、
基板(S)が静電チャックによって吸着固定された基板キャリア(320)をクランプする基板クランプ部(200)と、
マスク(M)に対して基板キャリア(320)を相対移動させて、上記基板クランプ部(200)によってクランプされた基板(S)及び上記マスククランプ部(100)によってクランプされたマスク(M)をアラインするアライン部(400)と、
上記アライン部(400)によってアラインされた基板(S)及びマスク(M)を互いに密着させる密着駆動部とを含み、
上記マスククランプ部(100)は、上記マスク(M)の底面から突出された突出部(310)と嵌合される嵌合部(110)と、上記嵌合部(110)が上記突出部(310)と嵌合された状態で上記突出部(310)及び上記嵌合部(110)の結合状態を維持する結合維持部(120)とを含み、
上記嵌合部(110)は上記突出部(310)が挿入される挿入部(111)が形成され、
上記結合維持部(120)は、上記突出部(310)の外周面に当該外周面に沿って形成された2個以上の溝部(311)に挿入されるボール部材(121)と、上記ボール部材(121)を上記溝部(311)に加圧する加圧部材(122)とを含む、
アライナ構造。 - 基板(S)及びマスク(M)がそれぞれ垂直状態でプロセスチャンバ(10)に移送され、基板(S)及びマスク(M)が移送及び密着された後に基板処理を行う基板処理装置において、
プロセスチャンバ(10)に設けられマスク(M)をクランプするマスククランプ部(100)と、
基板(S)が静電チャックによって吸着固定された基板キャリア(320)をクランプする基板クランプ部(200)と、
マスク(M)に対して基板キャリア(320)を相対移動させて、上記基板クランプ部(200)によってクランプされた基板(S)及び上記マスククランプ部(100)によってクランプされたマスク(M)をアラインするアライン部(400)と、
上記アライン部(400)によってアラインされた基板(S)及びマスク(M)を互いに密着させる密着駆動部とを含み、
上記基板クランプ部(200)は、上記基板キャリア(320)の底面から突出された突出部(321)と嵌合される嵌合部(210)と、上記嵌合部(210)が上記突出部(321)と嵌合された状態で上記突出部(321)及び上記嵌合部(210)の結合状態を維持する結合維持部(220)とを含み、
上記嵌合部(210)は上記突出部(321)が挿入される挿入部(211)が形成され、
上記結合維持部(220)は、上記突出部(321)の外周面に当該外周面に沿って形成された2個以上の溝部(322)に挿入されるボール部材(221)と、上記ボール部材(221)を上記溝部(322)に加圧する加圧部材(222)とを含む、
アライナ構造。 - 上記加圧部材(122、222)は、上記ボール部材(121、221)と接する傾斜面(123、223)が形成され、上記突出部(310、321)の長手方向に沿って移動されて上記ボール部材(121、221)を上記溝部(311、322)に加圧する請求項1又は2に記載のアライナ構造。
- 上記密着駆動部は、上記基板クランプ部(200)及び上記マスククランプ部(100)のうち少なくとも何れか一つに設けられ、マスク(M)及び基板(S)を密着させる線形駆動部を含むことを特徴とする請求項1又は2に記載のアライナ構造。
- 上記アライン部(400)は、上記マスク(M)及び上記基板(S)のうち何れか一つを上記基板(S)に対して平行な方向に線形移動させる第1線形移動部、第2線形移動部及び第3線形移動部を含む請求項1又は2に記載のアライナ構造。
- 上記第1線形移動部、上記第2線形移動部及び上記第3線形移動部は、線形移動方向が互いに直角をなし、垂直方向と傾斜をなす請求項5に記載のアライナ構造。
- 上記基板処理装置は、有機物、無機物及び金属物質のうち少なくとも何れか一つを含む蒸着物質を蒸発させる蒸発源によって蒸着工程を行う請求項1又は2に記載のアライナ構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20150046440 | 2015-04-01 | ||
KR10-2015-0046440 | 2015-04-01 | ||
PCT/KR2016/003379 WO2016159705A1 (ko) | 2015-04-01 | 2016-04-01 | 얼라이너 구조 및 얼라인 방법 |
Publications (2)
Publication Number | Publication Date |
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JP2018517054A JP2018517054A (ja) | 2018-06-28 |
JP6582059B2 true JP6582059B2 (ja) | 2019-09-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017551043A Active JP6582059B2 (ja) | 2015-04-01 | 2016-04-01 | アライナ構造及びアライン方法 |
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US (1) | US20190013229A1 (ja) |
JP (1) | JP6582059B2 (ja) |
KR (1) | KR20160118151A (ja) |
CN (1) | CN107896512A (ja) |
WO (1) | WO2016159705A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104894534B (zh) * | 2015-06-26 | 2017-12-29 | 京东方科技集团股份有限公司 | 气相沉积设备 |
KR102253563B1 (ko) * | 2017-11-09 | 2021-05-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 비접촉식 정렬을 위한 방법 및 장치 |
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JP2007046099A (ja) * | 2005-08-09 | 2007-02-22 | Canon Inc | マスクホルダ及び基板ホルダ |
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JP2014133923A (ja) * | 2013-01-10 | 2014-07-24 | Tokyo Electron Ltd | 保持装置、成膜装置及び搬送方法 |
US9490153B2 (en) * | 2013-07-26 | 2016-11-08 | Varian Semiconductor Equipment Associates, Inc. | Mechanical alignment of substrates to a mask |
-
2016
- 2016-04-01 US US15/562,362 patent/US20190013229A1/en not_active Abandoned
- 2016-04-01 CN CN201680023001.5A patent/CN107896512A/zh active Pending
- 2016-04-01 JP JP2017551043A patent/JP6582059B2/ja active Active
- 2016-04-01 KR KR1020160040077A patent/KR20160118151A/ko not_active Application Discontinuation
- 2016-04-01 WO PCT/KR2016/003379 patent/WO2016159705A1/ko active Application Filing
Also Published As
Publication number | Publication date |
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JP2018517054A (ja) | 2018-06-28 |
KR20160118151A (ko) | 2016-10-11 |
US20190013229A1 (en) | 2019-01-10 |
WO2016159705A1 (ko) | 2016-10-06 |
CN107896512A (zh) | 2018-04-10 |
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