JP6567050B2 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
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- JP6567050B2 JP6567050B2 JP2017521709A JP2017521709A JP6567050B2 JP 6567050 B2 JP6567050 B2 JP 6567050B2 JP 2017521709 A JP2017521709 A JP 2017521709A JP 2017521709 A JP2017521709 A JP 2017521709A JP 6567050 B2 JP6567050 B2 JP 6567050B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229920005989 resin Polymers 0.000 claims description 119
- 239000011347 resin Substances 0.000 claims description 119
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 57
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 description 29
- 230000002093 peripheral effect Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 7
- 229920002050 silicone resin Polymers 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910015802 BaSr Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
Claims (5)
- 基板と、
前記基板上に密集してダイボンディングで実装された複数の発光素子と、
前記複数の発光素子のダイボンド用の接着剤であり、蛍光体を含有せず、前記複数の発光素子の素子間にはみ出ることで前記素子間に配置された第1の樹脂と、
蛍光体を含有し、前記複数の発光素子の露出部の周囲を覆う第2の樹脂と、
を有することを特徴とする発光装置。 - 前記複数の発光素子は、隣接する発光素子同士の間隔が5μm以上かつ50μm以下になるように前記基板上に密集して実装されている、請求項1に記載の発光装置。
- 前記第2の樹脂を覆うように前記基板上に載置された光学素子をさらに有する、請求項1または2に記載の発光装置。
- ダイボンド用の接着剤であり蛍光体を含有しない第1の樹脂を介して基板上に複数の発光素子を配置する工程と、
前記複数の発光素子の素子間に前記第1の樹脂をはみ出させることにより、前記素子間を前記第1の樹脂で塞ぐ工程と、
蛍光体を含有する第2の樹脂で前記複数の発光素子の露出部の周囲を覆う工程と、
を有することを特徴とする発光装置の製造方法。 - 前記塞ぐ工程では、隣接する発光素子同士の間隔を前記第1の樹脂の硬化前に5μm以上かつ50μm以下の範囲内に縮めて、前記第1の樹脂を前記素子間にはみ出させる、請求項4に記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015110553 | 2015-05-29 | ||
JP2015110553 | 2015-05-29 | ||
PCT/JP2016/053831 WO2016194404A1 (ja) | 2015-05-29 | 2016-02-09 | 発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016194404A1 JPWO2016194404A1 (ja) | 2018-03-22 |
JP6567050B2 true JP6567050B2 (ja) | 2019-08-28 |
Family
ID=57440406
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Application Number | Title | Priority Date | Filing Date |
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JP2017521709A Active JP6567050B2 (ja) | 2015-05-29 | 2016-02-09 | 発光装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10714460B2 (ja) |
JP (1) | JP6567050B2 (ja) |
CN (1) | CN107615497B (ja) |
DE (1) | DE112016002425B4 (ja) |
WO (1) | WO2016194404A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7113607B2 (ja) * | 2017-11-01 | 2022-08-05 | シチズン電子株式会社 | Ledパッケージ及びその製造方法 |
KR102613886B1 (ko) | 2018-08-06 | 2023-12-15 | 서울바이오시스 주식회사 | 발광 장치, 및 이를 포함하는 광 조사기 |
JP7240907B2 (ja) * | 2019-03-12 | 2023-03-16 | シチズン電子株式会社 | 発光装置及び発光装置の製造方法 |
WO2021261567A1 (ja) * | 2020-06-25 | 2021-12-30 | シチズン電子株式会社 | 発光装置 |
KR20230023834A (ko) * | 2020-12-09 | 2023-02-20 | 주식회사 솔루엠 | 에어포켓 방지 기판, 에어포켓 방지 기판 모듈, 이를 포함하는 전기기기 및 이를 포함하는 전기기기의 제조 방법 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6917057B2 (en) * | 2002-12-31 | 2005-07-12 | Gelcore Llc | Layered phosphor coatings for LED devices |
JP2006005290A (ja) | 2004-06-21 | 2006-01-05 | Citizen Electronics Co Ltd | 発光ダイオード |
KR100638721B1 (ko) * | 2005-01-28 | 2006-10-30 | 삼성전기주식회사 | 수지 흐름 개선용 리드 프레임 구조를 갖는 측면형발광다이오드 패키지 |
JP2006303122A (ja) * | 2005-04-19 | 2006-11-02 | Citizen Electronics Co Ltd | チップ型led |
KR20060132298A (ko) * | 2005-06-17 | 2006-12-21 | 삼성전기주식회사 | 발광소자 패키지 |
JP5158472B2 (ja) * | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
JP2009076516A (ja) | 2007-09-19 | 2009-04-09 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2009076803A (ja) | 2007-09-25 | 2009-04-09 | Toshiba Lighting & Technology Corp | 発光モジュール及び発光装置 |
EP2216834B1 (en) * | 2007-11-29 | 2017-03-15 | Nichia Corporation | Light-emitting apparatus |
JP5266075B2 (ja) | 2009-01-26 | 2013-08-21 | パナソニック株式会社 | 電球形照明装置 |
US20100327733A1 (en) * | 2009-06-25 | 2010-12-30 | Bridgelux, Inc. | Multiple layer phosphor bearing film |
JP2012044048A (ja) | 2010-08-20 | 2012-03-01 | Sharp Corp | 発光素子パッケージの製造方法及び発光素子パッケージ |
US8455895B2 (en) | 2010-11-08 | 2013-06-04 | Bridgelux, Inc. | LED-based light source utilizing asymmetric conductors |
JP2012109478A (ja) * | 2010-11-19 | 2012-06-07 | Toshiba Lighting & Technology Corp | 発光体および照明装置 |
US20130062633A1 (en) * | 2011-04-18 | 2013-03-14 | Randolph Cary Demuynck | LED Array Having Embedded LED and Method Therefor |
JPWO2013011628A1 (ja) * | 2011-07-19 | 2015-02-23 | パナソニック株式会社 | 発光装置及びその製造方法 |
US9343441B2 (en) * | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
JP2013232477A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 発光モジュール |
JP6065408B2 (ja) * | 2012-04-27 | 2017-01-25 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
JP2015056552A (ja) * | 2013-09-12 | 2015-03-23 | 東芝ライテック株式会社 | 発光体および照明装置 |
JP6187277B2 (ja) * | 2014-01-21 | 2017-08-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP5712313B2 (ja) * | 2014-04-30 | 2015-05-07 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
-
2016
- 2016-02-09 CN CN201680031182.6A patent/CN107615497B/zh active Active
- 2016-02-09 WO PCT/JP2016/053831 patent/WO2016194404A1/ja active Application Filing
- 2016-02-09 US US15/577,620 patent/US10714460B2/en active Active
- 2016-02-09 JP JP2017521709A patent/JP6567050B2/ja active Active
- 2016-02-09 DE DE112016002425.8T patent/DE112016002425B4/de active Active
Also Published As
Publication number | Publication date |
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US20180138160A1 (en) | 2018-05-17 |
CN107615497A (zh) | 2018-01-19 |
DE112016002425B4 (de) | 2022-03-03 |
DE112016002425T5 (de) | 2018-02-15 |
CN107615497B (zh) | 2019-05-21 |
US10714460B2 (en) | 2020-07-14 |
JPWO2016194404A1 (ja) | 2018-03-22 |
WO2016194404A1 (ja) | 2016-12-08 |
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