JP6560045B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP6560045B2
JP6560045B2 JP2015149181A JP2015149181A JP6560045B2 JP 6560045 B2 JP6560045 B2 JP 6560045B2 JP 2015149181 A JP2015149181 A JP 2015149181A JP 2015149181 A JP2015149181 A JP 2015149181A JP 6560045 B2 JP6560045 B2 JP 6560045B2
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light
light emitting
emitting element
wavelength conversion
emitting device
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JP2017033971A (en
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三宅　徹
徹 三宅
秀崇 加藤
秀崇 加藤
晃平 池田
晃平 池田
朋哉 今
朋哉 今
作本　大輔
大輔 作本
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Kyocera Corp
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本発明は、半導体発光素子を光源とする発光装置に関する。   The present invention relates to a light emitting device using a semiconductor light emitting element as a light source.

ＬＥＤ（Light Emitting Diode）素子などの半導体発光素子を光源とする発光装置は、冷陰極管などの発光装置と比べて小型化が可能であり、発光効率に優れ、故障の発生率も小さいことから、露光装置や照明装置などに使用されている。   A light-emitting device that uses a semiconductor light-emitting element such as an LED (Light Emitting Diode) element as a light source can be downsized compared to a light-emitting device such as a cold-cathode tube, has excellent luminous efficiency, and has a low failure rate. It is used in exposure devices and illumination devices.

照明装置は、白色光を照射するのが好ましいが、半導体発光素子は、出射光のスペクトルが狭く、ほぼ単一色の光しか出射することができないので、たとえば、出射光の波長（色）が異なる半導体発光素子を複数並べて混色させて白色光を照射する構成がある。出射光の波長を異ならせるのは、たとえば、半導体発光素子の活性層を異なる化合物で構成することで可能となる。層構成の異なる半導体発光素子は個別に製造されるが、出射光を混色させるためには、製造された各素子を予め定める密度で実装させる必要があり、各素子の製造工程および実装工程も含めた照明装置の製造工程が繁雑なものとなる。   The illumination device preferably emits white light. However, the semiconductor light emitting element has a narrow spectrum of emitted light and can emit only light of almost a single color. For example, the wavelength (color) of the emitted light is different. There is a configuration in which a plurality of semiconductor light emitting elements are arranged and mixed to emit white light. The wavelength of the emitted light can be varied by, for example, configuring the active layer of the semiconductor light emitting element with a different compound. Semiconductor light-emitting elements with different layer configurations are manufactured individually, but in order to mix emitted light, each manufactured element must be mounted at a predetermined density, including the manufacturing process and mounting process of each element. In addition, the manufacturing process of the lighting device becomes complicated.

半導体発光素子からの単一色の出射光によって白色光を照射する構成として、蛍光物質を用いるものがある。蛍光物質は、半導体発光素子から出射された出射光を励起光として蛍光を発する。この蛍光は、励起光の波長とは異なる波長の光であり、すなわち出射光から波長変換されて異なる色の光が発せられることになる。出射光と、出射光から波長変換された蛍光との混色により、白色光を照射することができる。複数種類の蛍光物質を用いる場合は、出射光を利用することなく、出射光から波長変換された複数種類の蛍光同士の混色により、白色光を照射することができる。蛍光物質は、たとえば、樹脂層中に分散させて用いる。   As a configuration for irradiating white light with a single color of emitted light from a semiconductor light emitting element, there is one using a fluorescent material. The fluorescent material emits fluorescence using the emitted light emitted from the semiconductor light emitting element as excitation light. This fluorescence is light having a wavelength different from the wavelength of the excitation light, that is, light of a different color is emitted by wavelength conversion from the emitted light. White light can be irradiated by the mixed color of the emitted light and the fluorescence converted in wavelength from the emitted light. In the case of using a plurality of types of fluorescent substances, white light can be irradiated by mixing colors of a plurality of types of fluorescence that have been wavelength-converted from the emitted light without using the emitted light. The fluorescent material is used by being dispersed in, for example, a resin layer.

蛍光物質を用いる構成を採用することにより、１つの種類の半導体発光素子のみを用いて白色光を照射できるので、１つの製造工程で複数の素子を所望の密度で配置することができる。これにより、容易に光量の大きな照明装置を実現することが可能であるが、半導体発光素子からの発熱量および波長変換時の蛍光体からの発熱量も大きくなり、半導体発光素子および蛍光体を分散させた樹脂層が劣化する。   By adopting a configuration using a fluorescent material, it is possible to irradiate white light using only one type of semiconductor light emitting element, and thus a plurality of elements can be arranged at a desired density in one manufacturing process. This makes it possible to easily realize a lighting device with a large amount of light, but the amount of heat generated from the semiconductor light emitting element and the amount of heat generated from the phosphor during wavelength conversion also increase, and the semiconductor light emitting element and the phosphor are dispersed. The made resin layer deteriorates.

特許文献１記載の発光素子は、蛍光体層を透明熱伝導層下に設け、発光半導体から透明熱伝導層および蛍光体層に光を放出するものである。   The light-emitting element described in Patent Document 1 has a phosphor layer provided under a transparent heat conductive layer, and emits light from the light emitting semiconductor to the transparent heat conductive layer and the phosphor layer.

特表２０１２−５０２４４９号公報Special table 2012-502449 gazette

特許文献１記載の発光素子は、透明熱伝導層によって熱を放散させることができるが、半導体発光素子から出射された光が透明熱伝導層と蛍光体層との界面や透明熱伝導層と透明熱伝導層を支持する部材との界面などで反射されることにより、透明熱伝導層の端面から漏れるおそれがある。出射光と蛍光とを混色させる構成では、漏れ光が単一色として意図しない位置から照射される。すなわち、漏れ光が単一色として透明熱伝導層の端面から照射されることで、蛍光と混色せず、目的の白色光が得られない。すなわち、透明熱伝導層の端面付近では、半導体発光素子から出射された光が単一色として出射されることによ
り、発光素子の照射領域において、白色光として照射される中央領域の外周領域に半導体発光素子から出射された単一色の光が照射されやすくなる。よって、発光素子の照射領域は、一様な白色光として照射されないおそれが生じる。また、蛍光のみを混色させる構成では、上述と同様に、発光素子の照射領域における中央領域では白色光は得られても、発光素子の照射領域における外周領域では、白色光に透明熱伝導層の端面付近から出射される、半導体発光素子からの出射光の単一色が加わって、やはり発光素子の照射領域において目的の白色光が得られない。発光素子の発光量が大きくなるほど、この問題は顕著なものとなる。 The light emitting element described in Patent Document 1 can dissipate heat by the transparent heat conductive layer, but the light emitted from the semiconductor light emitting element is the interface between the transparent heat conductive layer and the phosphor layer, the transparent heat conductive layer, and the transparent light emitting element. There is a risk of leakage from the end face of the transparent heat conductive layer due to reflection at the interface with the member supporting the heat conductive layer. In the configuration in which outgoing light and fluorescence are mixed, leakage light is emitted from an unintended position as a single color. That is, the leakage light is irradiated as a single color from the end face of the transparent heat conductive layer, so that it does not mix with fluorescence and the desired white light cannot be obtained. That is, in the vicinity of the end face of the transparent heat conductive layer, light emitted from the semiconductor light emitting element is emitted as a single color, so that in the irradiation area of the light emitting element, semiconductor light emission occurs in the outer peripheral area of the central area irradiated as white light. The single color light emitted from the element is easily irradiated. Therefore, there is a possibility that the irradiation area of the light emitting element is not irradiated as uniform white light. Further, in the configuration in which only fluorescence is mixed, as described above, white light is obtained in the central region in the irradiation region of the light emitting element, but in the outer peripheral region in the irradiation region of the light emitting element, the transparent heat conductive layer is A single color of light emitted from the semiconductor light emitting element emitted from the vicinity of the end face is added, and the target white light cannot be obtained in the irradiation region of the light emitting element. This problem becomes more prominent as the light emission amount of the light emitting element increases.

本発明の目的は、放熱性に優れ、所望の白色光を照射することができる発光装置を提供することである。   The objective of this invention is providing the light-emitting device which is excellent in heat dissipation and can irradiate desired white light.

本発明の一つの態様の発光装置は、基板と、前記基板の上面に位置する発光素子と、前記発光素子を囲み、上側の開口の周縁に位置する開口周縁に段差部を有する枠体と、前記発光素子から出射される光を透過し、前記開口および前記開口周縁を覆うとともに、前記基板側に位置する枠体対向面を有する透明板状部材と、前記発光素子から出射される光に励起されて蛍光を発する蛍光物質が内部に分散された無機材料を含み、前記透明板状部材より外形が小さく、前記段差部と前記枠体対向面との間に位置する波長変換部材と、前記波長変換部材の上面における外縁の外側から、前記外縁の内側にかけて位置し、前記発光素子から出射された光を反射または吸収する反射吸収部材と、を備えることを特徴とする。 Light-emitting device of one embodiment of the present invention includes a substrate, a light emitting element located on the upper surface of the substrate, enclose the light emitting element, a frame body having a step portion in the opening edge located on the periphery of the upper opening A transparent plate-like member that transmits light emitted from the light emitting element , covers the opening and the periphery of the opening, and has a frame-facing surface located on the substrate side , and light emitted from the light emitting element. includes excited by inorganic material fluorescent material dispersed therein to fluoresce, the rather small, outline of a transparent plate-like member, a wavelength conversion member positioned between the frame body facing surface and the stepped portion, A reflection / absorption member that is located from the outer side of the outer edge of the wavelength conversion member to the inner side of the outer edge and reflects or absorbs light emitted from the light emitting element.

本発明の一つの態様の発光装置によれば、発光素子から出射された光は、波長変換部材に照射され、波長変換されて透明板状部材に入射し、透明板状部材から白色光として外部へ出射される。波長変換部材を透過せずに透明板状部材に入射し、透明板状部材の端面から漏れ出る僅かな発光素子からの光、および波長変換部材を透過して透明板状部材に入射し、透明板状部材内を進行しながら透明板状部材の端面から漏れ出る僅かな発光素子からの光は、枠体の開口周縁と透明板状部材との間に設けられた反射吸収部材により、反射または吸収されるので漏れ光を低減することができる。   According to the light emitting device of one aspect of the present invention, the light emitted from the light emitting element is applied to the wavelength conversion member, converted in wavelength, and incident on the transparent plate member, and is externally converted into white light from the transparent plate member. Is emitted. Light is incident on the transparent plate member without passing through the wavelength conversion member, light from the light emitting element leaking from the end face of the transparent plate member, and the wavelength conversion member is transmitted and incident on the transparent plate member. Light from the light emitting element that leaks from the end face of the transparent plate-like member while traveling through the plate-like member is reflected or reflected by the reflection absorbing member provided between the opening periphery of the frame and the transparent plate-like member. Since it is absorbed, leakage light can be reduced.

これにより、透明板状部材を設けても、意図しない混色が発生することを防ぎ、放熱性に優れ、所望の白色光を照射することができる。   Thereby, even if a transparent plate-like member is provided, it is possible to prevent unintended color mixing, to have excellent heat dissipation, and to irradiate desired white light.

本発明の第１実施形態に係る発光装置１を示す斜視図である。It is a perspective view which shows the light-emitting device 1 which concerns on 1st Embodiment of this invention. 発光装置１の構成を示す分解斜視図である。1 is an exploded perspective view showing a configuration of a light emitting device 1. FIG. 発光装置１の外観を示す図である。1 is a diagram illustrating an appearance of a light emitting device 1. FIG. 発光装置１の縦断面図である。1 is a longitudinal sectional view of a light emitting device 1. FIG. 反射吸収部材７ｂの一例を拡大した拡大断面図である。It is the expanded sectional view which expanded an example of reflection absorption member 7b. 本発明の第２実施形態に係る発光装置１Ａを示す縦断面図である。It is a longitudinal cross-sectional view which shows 1 A of light-emitting devices which concern on 2nd Embodiment of this invention. 本発明の第３実施形態に係る発光装置１Ｂを示す縦断面図である。It is a longitudinal cross-sectional view which shows the light-emitting device 1B which concerns on 3rd Embodiment of this invention. 本発明の第４実施形態に係る発光装置１Ｃを示す縦断面図である。It is a longitudinal cross-sectional view which shows 1 C of light-emitting devices which concern on 4th Embodiment of this invention.

図１は、本発明の実施形態に係る発光装置１を示す斜視図であり、図２は、発光装置１の構成を示す分解斜視図であり、図３は、発光装置１の外観を示す図である。図３（ａ）は、平面図であり、図３（ｂ）は、側面図である。図４は、発光装置１の縦断面図である。   FIG. 1 is a perspective view showing a light emitting device 1 according to an embodiment of the present invention, FIG. 2 is an exploded perspective view showing a configuration of the light emitting device 1, and FIG. It is. FIG. 3A is a plan view, and FIG. 3B is a side view. FIG. 4 is a longitudinal sectional view of the light emitting device 1.

発光装置１は、基板２と、配線基板３と、発光素子４と、枠体５と、波長変換部材６と、透明板状部材７と、を備え、枠体５の開口周縁と透明板状部材７との間に反射吸収部材７ｂが設けられている。本実施形態の発光装置１は、発光素子４から出射される光を励起光として、波長変換部材６に含まれる複数種類の蛍光物質から発せれられる蛍光を混色させて白色光を照射するものである。発光素子４から出射される光は、たとえば、波長が３８０ｎｍ以上４２０ｎｍ以下であり、波長変換部材６に含まれる蛍光物質は、発光素子４から出射される光に励起されて、赤色光、青色光および緑色光の蛍光を発する。なお、発光素子４から出射される光の波長は、３８０ｎｍ以上４２０ｎｍ以下に限定されず、波長変換後の蛍光が混色することにより白色光を照射できる構成であれば、発光素子４と波長変換部材６に含まれる蛍光物質との組合わせにより適宜選択することができる。   The light emitting device 1 includes a substrate 2, a wiring substrate 3, a light emitting element 4, a frame body 5, a wavelength conversion member 6, and a transparent plate member 7, and an opening periphery and a transparent plate shape of the frame body 5. A reflection absorbing member 7 b is provided between the member 7. The light emitting device 1 of the present embodiment irradiates white light by mixing light emitted from a plurality of types of fluorescent materials included in the wavelength conversion member 6 with light emitted from the light emitting element 4 as excitation light. is there. The light emitted from the light emitting element 4 has a wavelength of, for example, 380 nm or more and 420 nm or less, and the fluorescent substance contained in the wavelength conversion member 6 is excited by the light emitted from the light emitting element 4 to generate red light and blue light. And emits green light fluorescence. The wavelength of the light emitted from the light emitting element 4 is not limited to 380 nm or more and 420 nm or less, and the light emitting element 4 and the wavelength conversion member can be used as long as they can emit white light by mixing the color-converted fluorescence. 6 can be selected as appropriate depending on the combination with the fluorescent substance included in the No. 6.

基板２は、金属材料からなる矩形板状の部材である。基板２は、その一方主面２ａに配線基板３および発光素子４を実装する。基板２を構成する金属材料としては、例えば、銅（Ｃｕ）または銅合金、ステンレス（ＳＵＳ）、Ｆｅ−Ｎｉ−Ｃｏ合金、４２アロイなどを用いることができ、配線基板３および発光素子４に対するグランド電極としての機能、発光素子４で発生する熱を放熱するための熱伝導部材としての機能、発光装置１の機械的強度を高める機能などを備えていてもよい。   The substrate 2 is a rectangular plate member made of a metal material. Substrate 2 has wiring substrate 3 and light emitting element 4 mounted on one main surface 2a thereof. For example, copper (Cu) or copper alloy, stainless steel (SUS), Fe—Ni—Co alloy, 42 alloy, or the like can be used as the metal material constituting the substrate 2, and the ground for the wiring substrate 3 and the light emitting element 4 can be used. A function as an electrode, a function as a heat conductive member for radiating heat generated in the light emitting element 4, a function of increasing the mechanical strength of the light emitting device 1, and the like may be provided.

基板２の厚みは、要求される機能、構成する金属材料などに応じて適宜設定すればよく、例えば銅からなる場合は、０．５〜５ｍｍとすればよい。   The thickness of the board | substrate 2 should just be set suitably according to the function requested | required, the metal material to comprise, etc., for example, when it consists of copper, what is necessary is just to be 0.5-5 mm.

配線基板３は、発光素子４と発光装置１の外部とを電気的に接続し、発光素子４への電流または電圧の供給、点灯および消灯の制御のための電気信号を伝送する。配線基板３は、電気信号を伝送可能であれば、セラミック絶縁材料と導体材料とからなるセラミック配線基板であっても、樹脂絶縁材料と導体材料とからなる有機配線基板であってもよい。配線基板３は、矩形板状であり、中央に貫通孔または凹部が設けられ、貫通孔内または凹部内に発光素子４が収容される。配線基板３中央に貫通孔が設けられる場合、発光素子４は、基板２の一方主面２ａに直接実装され、凹部が設けられる場合、発光素子４は、配線基板３の一部である凹部の底部を介して基板２の一方主面２ａに実装される。   The wiring board 3 electrically connects the light-emitting element 4 and the outside of the light-emitting device 1, and transmits an electric signal for supplying current or voltage to the light-emitting element 4 and controlling lighting and extinguishing. The wiring board 3 may be a ceramic wiring board made of a ceramic insulating material and a conductive material or an organic wiring board made of a resin insulating material and a conductive material as long as an electric signal can be transmitted. The wiring board 3 has a rectangular plate shape, a through hole or a recess is provided at the center, and the light emitting element 4 is accommodated in the through hole or the recess. When the through-hole is provided at the center of the wiring board 3, the light-emitting element 4 is directly mounted on the one main surface 2 a of the substrate 2, and when the concave part is provided, the light-emitting element 4 is a part of the concave part that is a part of the wiring board 3. It is mounted on one main surface 2a of the substrate 2 through the bottom.

配線基板３が、セラミック配線基板の場合、セラミック材料から成る絶縁層に配線導体が形成される。セラミック配線基板は、１層のセラミック絶縁層から形成されていても良いし、２層または３層以上の複数のセラミック絶縁層から形成されていても良い。   When the wiring board 3 is a ceramic wiring board, a wiring conductor is formed on an insulating layer made of a ceramic material. The ceramic wiring board may be formed from one ceramic insulating layer, or may be formed from two or more ceramic insulating layers.

セラミック配線基板の内部には、各絶縁層を貫通する貫通導体と内部配線とから成る配線導体が設けられていても良いし、その上面または下面に露出した配線導体を有していても良い。   Inside the ceramic wiring substrate, a wiring conductor composed of a through conductor and an internal wiring penetrating each insulating layer may be provided, or a wiring conductor exposed on the upper surface or the lower surface thereof may be provided.

セラミック配線基板で用いられるセラミック材料としては、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体またはガラスセラミック焼結体等が挙げられる。   Examples of the ceramic material used in the ceramic wiring board include an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, and a glass ceramic sintered body. Examples include ligatures.

また、配線基板３が、有機配線基板の場合、有機材料から成る絶縁層に配線導体が形成される。有機配線基板は、１層の絶縁層から形成されていても良いし、２層または３層以上の複数の絶縁層から形成されていても良い。   When the wiring board 3 is an organic wiring board, a wiring conductor is formed on an insulating layer made of an organic material. The organic wiring board may be formed from one insulating layer, or may be formed from two or more insulating layers.

有機配線基板は、例えば、プリント配線基板、ビルドアップ配線基板またはフレキシブル配線基板等の絶縁層が有機材料から成るものであれば良い。有機配線基板で用いられる有機材料としては、例えば、エポキシ樹脂、ポリイミド樹脂、ポリエステル樹脂、アクリル樹脂、フェノール樹脂またはフッ素系樹脂等が挙げられる。   The organic wiring board may be an insulating layer made of an organic material, such as a printed wiring board, a build-up wiring board, or a flexible wiring board. Examples of the organic material used in the organic wiring board include an epoxy resin, a polyimide resin, a polyester resin, an acrylic resin, a phenol resin, and a fluorine resin.

有機配線基板の内部には、内部配線と、他の内部配線と電気的に接続する層間接続導体とから成る配線導体が設けられていても良いし、その上面または下面に露出した配線導体を有していても良い。   Inside the organic wiring board, there may be provided a wiring conductor composed of an internal wiring and an interlayer connection conductor that is electrically connected to other internal wiring, and there is a wiring conductor exposed on the upper surface or the lower surface thereof. You may do it.

また、配線基板３は上面、下面および側面等に、外部配線と電気的に接続するための外部接続用電極が設けられている。本実施形態では配線基板３の上面に外部接続用電極３ａが設けられている。外部接続用電極３ａは、配線基板３の内部の配線導体を介して、貫通孔内または凹部内で配線基板３の上面側の開口部の周縁が、他の部分と比べて一段低い段差部３ｂの底面に設けられた素子接続用電極（不図示）と接続している。素子接続用電極と発光素子４とは、ボンディングワイヤなどの接続部材によって電気的に接続される。   Further, the wiring board 3 is provided with electrodes for external connection for electrical connection with external wiring on the upper surface, the lower surface, the side surface, and the like. In the present embodiment, an external connection electrode 3 a is provided on the upper surface of the wiring board 3. The external connection electrode 3a has a step 3b whose peripheral edge of the opening on the upper surface side of the wiring board 3 is one step lower than the other part in the through hole or in the recess through the wiring conductor inside the wiring board 3. Are connected to an element connection electrode (not shown) provided on the bottom surface. The element connection electrode and the light emitting element 4 are electrically connected by a connection member such as a bonding wire.

発光素子４は、基板２の一方主面２ａに直接または配線基板３を介して設けられる。発光素子４は、例えば、透光性基体と、透光性基体上に形成される光半導体層とを有している。透光性基体は、有機金属気相成長法または分子線エピタキシャル成長法等の化学気相成長法を用いて、光半導体層を成長させることが可能なものであればよい。透光性基体に用いられる材料としては、例えば、サファイア、窒化ガリウム、窒化アルミニウム、酸化亜鉛、セレン化亜鉛、シリコンカーバイド、シリコンまたは二ホウ化ジルコニウム等を用いることができる。なお、透光性基体の厚みは、例えば５０μｍ以上１０００μｍ以下である。   The light emitting element 4 is provided on one main surface 2 a of the substrate 2 directly or via the wiring substrate 3. The light emitting element 4 includes, for example, a translucent base and an optical semiconductor layer formed on the translucent base. The translucent substrate may be any substrate that can grow an optical semiconductor layer using a chemical vapor deposition method such as a metal organic chemical vapor deposition method or a molecular beam epitaxial growth method. As a material used for the light-transmitting substrate, for example, sapphire, gallium nitride, aluminum nitride, zinc oxide, zinc selenide, silicon carbide, silicon, or zirconium diboride can be used. In addition, the thickness of a translucent base | substrate is 50 micrometers or more and 1000 micrometers or less, for example.

光半導体層は、透光性基体上に形成される第１半導体層と、第１半導体層上に形成される発光層と、発光層上に形成される第２半導体層とから構成されている。第１半導体層、発光層および第２半導体層は、例えば、ＩＩＩ族窒化物半導体、ガリウム燐またはガリウムヒ素等のＩＩＩ−Ｖ族半導体、あるいは、窒化ガリウム、窒化アルミニウムまたは窒化インジウム等のＩＩＩ族窒化物半導体などを用いることができる。なお、第１半導体層の厚みは、例えば１μｍ以上５μｍ以下であって、発光層の厚みは、例えば２５ｎｍ以上１５０ｎｍ以下であって、第２半導体層の厚みは、例えば５０ｎｍ以上６００ｎｍ以下である。また、このように構成された発光素子４は、例えば３８０ｎｍ以上４２０ｎｍ以下の波長範囲の紫色の光を励起光として出射することができる。   The optical semiconductor layer includes a first semiconductor layer formed on the translucent substrate, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. . The first semiconductor layer, the light emitting layer, and the second semiconductor layer are, for example, a group III nitride semiconductor, a group III-V semiconductor such as gallium phosphide or gallium arsenide, or a group III nitride such as gallium nitride, aluminum nitride, or indium nitride. A physical semiconductor or the like can be used. The thickness of the first semiconductor layer is, for example, 1 μm to 5 μm, the thickness of the light emitting layer is, for example, 25 nm to 150 nm, and the thickness of the second semiconductor layer is, for example, 50 nm to 600 nm. In addition, the light emitting element 4 configured as described above can emit, for example, violet light having a wavelength range of 380 nm to 420 nm as excitation light.

発光素子４は、例えば、発光装置１の出力が１０，０００Ｗ、１０００ｌｍ（ルーメン）であり、このような大光量の要求に答えるべく、複数の素子がアレイ状に並んで設けられ、本実施形態では、例えば９個の素子が３行×３列で並んでいる。複数の素子は、個別に製造された素子を複数準備し、基板２の一方主面２ａに並べて実装されてもよいが、同一波長の光を出射する複数の発光点を有する１つの発光素子として製造されたものであってもよい。複数の発光点を有する発光素子４であれば、大光量を満足するとともに、実装は１つの素子を実装するだけでよいので、実装工程が容易である。   The light-emitting element 4 has, for example, an output of the light-emitting device 1 of 10,000 W and 1000 lm (lumen), and a plurality of elements are arranged in an array in order to meet such a demand for a large amount of light. Then, for example, nine elements are arranged in 3 rows × 3 columns. A plurality of elements may be prepared by preparing a plurality of individually manufactured elements and arranged side by side on the one main surface 2a of the substrate 2, but as one light emitting element having a plurality of light emitting points that emit light of the same wavelength. It may be manufactured. If the light-emitting element 4 has a plurality of light-emitting points, the light-emitting element 4 satisfies a large amount of light, and the mounting process is easy because only one element needs to be mounted.

枠体５は、発光素子４を取り囲むように、基板２の一方主面２ａに設けられる。枠体５は、基板２と同様に、金属材料からなる矩形板状の部材であり、中央に開口５ａを有する。発光素子４から出射された光は、開口５ａを通って外部へと照射される。   The frame body 5 is provided on the one main surface 2 a of the substrate 2 so as to surround the light emitting element 4. The frame 5 is a rectangular plate-like member made of a metal material, like the substrate 2, and has an opening 5a in the center. The light emitted from the light emitting element 4 is irradiated to the outside through the opening 5a.

本実施形態では、枠体５の基板２に対向する側には、配線基板３が嵌合する凹部５ｃが設けられ、枠体５の基板２に対向する側とは反対側には、後述の波長変換部材６と透明板状部材７とが配置される段差部５ｂが設けられる。基板２の平坦な一方主面２ａに配線基板３が実装された状態では、配線基板３の部分が一方主面２ａに対して凸の状態となるので、配線基板３の形状に合わせて枠体５には、配線基板３が嵌合する凹部５ｃが設けられる。枠体５は、基板２に対向する側の凹部５ｃ以外の部分において、基板２の一方主面２ａと接合される。もしくは、枠体５は、基板２に対向する側の凹部５ｃおよび凹部５ｃ以
外の部分において、配線基板３および基板２の一方主面２ａと接合される。 In the present embodiment, a recess 5c into which the wiring board 3 is fitted is provided on the side of the frame 5 facing the substrate 2, and the side opposite to the side of the frame 5 facing the substrate 2 is described later. A step portion 5b in which the wavelength conversion member 6 and the transparent plate member 7 are disposed is provided. In a state where the wiring substrate 3 is mounted on the flat one main surface 2 a of the substrate 2, the portion of the wiring substrate 3 is convex with respect to the one main surface 2 a, so that the frame body conforms to the shape of the wiring substrate 3. 5 is provided with a recess 5c into which the wiring board 3 is fitted. The frame body 5 is joined to the one main surface 2 a of the substrate 2 at a portion other than the concave portion 5 c on the side facing the substrate 2. Alternatively, the frame 5 is joined to the wiring substrate 3 and the one main surface 2a of the substrate 2 at a portion other than the recess 5c on the side facing the substrate 2 and the recess 5c.

枠体５の基板２に対向する側とは反対側において、開口５ａの周縁が、他の部分と比べて一段低い段差部５ｂが設けられる。この段差部５ｂには、波長変換部材６と透明板状部材７とが配置される。波長変換部材６は、透明板状部材７の基板に対向する側の面に、開口５ａ内に収まるように設けられる。段差部５ｂの深さは、透明板状部材７の厚みと反射吸収部材７ｂの厚みとの和にほぼ等しく、枠体５の基板２に対向する側とは反対側の段差部５ｂ以外の部分と透明板状部材７の表面とがほぼ同一の高さとなっている。また、段差部５ｂの深さは、透明板状部材７の厚みと反射吸収部材７ｂの厚みとの和より大きくてもよい。   On the side opposite to the side facing the substrate 2 of the frame 5, a step portion 5 b is provided in which the periphery of the opening 5 a is one step lower than the other portions. The wavelength conversion member 6 and the transparent plate member 7 are disposed in the step portion 5b. The wavelength conversion member 6 is provided on the surface of the transparent plate-like member 7 facing the substrate so as to be accommodated in the opening 5a. The depth of the stepped portion 5b is substantially equal to the sum of the thickness of the transparent plate-like member 7 and the thickness of the reflection absorbing member 7b, and a portion other than the stepped portion 5b on the opposite side of the frame 5 from the side facing the substrate 2. And the surface of the transparent plate-like member 7 have substantially the same height. Further, the depth of the stepped portion 5b may be larger than the sum of the thickness of the transparent plate member 7 and the thickness of the reflection absorbing member 7b.

なお、枠体５は、本実施形態では段差部５ｂおよび凹部５ｃを設ける構成としているが、いずれも必須の構成ではない。枠体５に段差部５ｂが設けられない場合であっても、開口周縁に波長変換部材６と透明板状部材７とを配置することは可能であり、このとき、波長変換部材６は、開口５ａに収めることができるが、少なくとも透明板状部材７は、枠体５の基板２に対向する側とは反対側の面よりも突出した形状となる。凹部５ｃが設けられない場合、たとえば、基板２の一方主面２ａに凹部を設けて配線基板３をこの基板２の凹部内に収容するようにすれば枠体５に凹部を設ける必要がない。   In addition, although the frame 5 is set as the structure which provides the level | step-difference part 5b and the recessed part 5c in this embodiment, neither is an essential structure. Even when the step portion 5b is not provided in the frame body 5, it is possible to arrange the wavelength conversion member 6 and the transparent plate-like member 7 on the periphery of the opening. Although it can be accommodated in 5a, at least the transparent plate-like member 7 has a shape projecting from the surface of the frame 5 opposite to the side facing the substrate 2. In the case where the recess 5 c is not provided, for example, if the recess is provided on the one main surface 2 a of the substrate 2 and the wiring board 3 is accommodated in the recess of the substrate 2, it is not necessary to provide the recess in the frame 5.

枠体５を構成する金属材料としては、基板２と同様の金属材料、例えば、銅（Ｃｕ）または銅合金、ステンレス（ＳＵＳ）、Ｆｅ−Ｎｉ−Ｃｏ合金、４２アロイなどを用いることができる。枠体５の厚みは、要求される機能、構成する金属材料などに応じて適宜設定すればよく、例えば銅からなる場合は、０．５〜５ｍｍとすればよい。   As the metal material constituting the frame 5, the same metal material as that of the substrate 2, for example, copper (Cu) or a copper alloy, stainless steel (SUS), Fe—Ni—Co alloy, 42 alloy, or the like can be used. The thickness of the frame 5 may be appropriately set according to the required function, the metal material to be configured, etc. For example, when made of copper, the thickness may be 0.5 to 5 mm.

波長変換部材６は、発光素子４から出射された光によって励起されて蛍光を発する蛍光物質と、蛍光物質が分散される無機材料とを含み、透明板状部材７の枠体対向面７ａに設けられる。   The wavelength conversion member 6 includes a fluorescent material that emits fluorescence when excited by the light emitted from the light emitting element 4, and an inorganic material in which the fluorescent material is dispersed, and is provided on the frame-facing surface 7 a of the transparent plate member 7. It is done.

蛍光物質は、発光素子４との組合せにおいて、発する蛍光が白色光となるように選択される。無機材料は、発光素子４から出射される光を透過する材料であって、蛍光物質が分散される材料であればよい。例えば、透明セラミック材料またはガラス材料等の透光性の無機材料が用いられる。   The fluorescent substance is selected so that the fluorescence emitted in the combination with the light emitting element 4 becomes white light. The inorganic material may be a material that transmits light emitted from the light emitting element 4 and that can disperse the fluorescent material. For example, a transparent inorganic material such as a transparent ceramic material or a glass material is used.

蛍光物質は、発光素子４から出射された、３８０ｎｍ以上４２０ｎｍ以下の光によって励起され、青色の蛍光を発する青色蛍光物質、発光素子４から出射された、３８０ｎｍ以上４２０ｎｍ以下の光によって励起され、赤色の蛍光を発する赤色蛍光物質、発光素子４から出射された、３８０ｎｍ以上４２０ｎｍ以下の光によって励起され、緑色の蛍光を発する緑色蛍光物質を含み、これら３色の蛍光物質が均等に無機材料中に分散される。   The fluorescent material is excited by light of 380 nm to 420 nm emitted from the light emitting element 4 and is excited by light of 380 nm to 420 nm emitted from the light emitting element 4. A red fluorescent material that emits green fluorescence, and a green fluorescent material that emits green fluorescence and is excited by light of 380 nm to 420 nm emitted from the light emitting element 4, and these three color fluorescent materials are uniformly contained in the inorganic material. Distributed.

青色蛍光物質としては、ＢａＭｇＡｌ１０Ｏ１７：Ｅｕ、（ＳｒＣａＢａＭｇ）１０（ＰＯ４）６Ｃｌ２：Ｅｕなどを用いることができ、赤色発光用蛍光物質としては、（Ｓｒ,Ｃａ）ＡｌＳｉＮ３：Ｅｕ、Ｙ２Ｏ２Ｓ：Ｅｕ、Ｙ２Ｏ３：Ｅｕなどを用いることがで
き、緑色発光用蛍光物質としては、（Ｓｒ，Ｂａ，Ｍｇ）２ＳｉＯ４：Ｅｕ２＋、ＺｎＳ：Ｃｕ，Ａｌ、Ｚｎ２ＳｉＯ４：Ｍｎなどを用いることができる。 As the blue fluorescent material, BaMgAl 10 O 17 : Eu, (SrCaBaMg) 10 (PO 4) 6 Cl 2 : Eu can be used, and as the red light emitting fluorescent material, (Sr, Ca) AlSiN 3 : Eu, Y 2 O 2 S: Eu, Y 2 O 3 : Eu, and the like can be used. As the fluorescent material for green light emission, (Sr, Ba, Mg) 2 SiO 4 : Eu 2+ , ZnS: Cu, Al, Zn 2 SiO 4 : Mn or the like can be used.

波長変換部材６の厚みは、要求される波長変換特性、構成する無機材料などに応じて適宜設定すればよく、例えば０．２〜２ｍｍとすればよい。   What is necessary is just to set the thickness of the wavelength conversion member 6 suitably according to the wavelength conversion characteristic requested | required, the inorganic material to comprise, etc., for example, 0.2-2 mm.

透明板状部材７は、熱伝導性を有し、枠体５の開口５ａを覆い、枠体５に対向する枠体対向面７ａを有しており、上記のように枠体対向面７ａに波長変換部材６が設けられてい
る。 The transparent plate-like member 7 has thermal conductivity, covers the opening 5a of the frame body 5, and has a frame body facing surface 7a facing the frame body 5. As described above, the transparent plate-like member 7 is provided on the frame body facing surface 7a. A wavelength conversion member 6 is provided.

透明板状部材７は、波長変換部材６によって波長変換された光、すなわち白色光に対して透明であればよく、例えば、発光素子４から出射される光や白色光の透過率が９５％以上であればよい。   The transparent plate-like member 7 only needs to be transparent to the light wavelength-converted by the wavelength conversion member 6, that is, white light. For example, the transmittance of light emitted from the light emitting element 4 and white light is 95% or more. If it is.

透明板状部材７を構成する材料は、白色光に対して透明で、熱伝導性を有していればよく、例えばサファイアなどの透明セラミック材料またはガラス材料などを用いることができる。   The material which comprises the transparent plate-shaped member 7 should just be transparent with respect to white light, and should have heat conductivity, for example, can use transparent ceramic materials or glass materials, such as sapphire.

透明板状部材７の厚みは、要求される熱伝導性および光透過率、構成する材料などに応じて適宜設定すればよく、例えばサファイアからなる場合は、０．２〜２ｍｍとすればよい。   The thickness of the transparent plate-like member 7 may be appropriately set according to the required thermal conductivity and light transmittance, the constituent material, and the like. For example, when it is made of sapphire, it may be 0.2 to 2 mm.

発光装置１で生じる熱には、発光素子４が動作することにより発光素子４で発生する熱、波長変換部材６において、蛍光物質が励起されて蛍光を発することにより発生する熱がある。発光素子４で発生した熱は、一部が基板２、枠体５および配線基板３を伝導して放熱され、一部が開口５ａで囲まれる、発光素子４の周辺空間を加熱する。この周辺空間の熱は、波長変換部材６を介して透明板状部材７に伝導され、さらに透明板状部材７から枠体５へと伝導され、基板２および配線基板３を介して放熱される。波長変換部材６で発生した熱も透明板状部材７を介して枠体５へと伝導され、基板２および配線基板３を介して放熱される。   The heat generated in the light-emitting device 1 includes heat generated by the light-emitting element 4 when the light-emitting element 4 operates, and heat generated when the fluorescent substance is excited and emits fluorescence in the wavelength conversion member 6. The heat generated in the light emitting element 4 is partly conducted through the substrate 2, the frame body 5, and the wiring board 3 to be dissipated and heats the surrounding space of the light emitting element 4 partially surrounded by the opening 5 a. The heat in the peripheral space is conducted to the transparent plate-like member 7 through the wavelength conversion member 6, further conducted from the transparent plate-like member 7 to the frame body 5, and radiated through the substrate 2 and the wiring substrate 3. . The heat generated in the wavelength conversion member 6 is also conducted to the frame body 5 through the transparent plate member 7 and is radiated through the substrate 2 and the wiring substrate 3.

蛍光物質を分散させる材料に無機材料を用いることにより、波長変換部材６は、例えば、樹脂材料などを用いる場合に比べて耐熱性や耐候性に優れる。また、無機材料を用いることで、長期にわたって熱伝導性を安定して維持することができるので、発光素子４で発生した熱および蛍光物質が励起されて発生する熱が、長期にわたって透明板状部材７に安定して伝導され易い。   By using an inorganic material as a material for dispersing the fluorescent material, the wavelength conversion member 6 is superior in heat resistance and weather resistance compared to the case of using a resin material, for example. In addition, since the thermal conductivity can be stably maintained over a long period of time by using the inorganic material, the heat generated in the light emitting element 4 and the heat generated by the excitation of the fluorescent substance are generated over a long period of time. 7 is easily conducted stably.

本実施形態では、枠体５の開口周縁である段差部５ｂと透明板状部材７の枠体対向面７ａとの間に設けられ、発光素子４から出射された光を反射または吸収する反射吸収部材７ｂを備える。反射吸収部材７ｂが反射または吸収する光は、発光素子４から出射されたのち波長変換部材６を透過せず、波長変換部材６の外方を通過した光や、発光素子４から出射されたのちに波長変換部材を透過して透明板状部材に入射し、透明板状部材の外周縁付近から出射される光、すなわち波長変換されていない発光素子４から出射される光である。   In the present embodiment, reflection absorption is provided between the stepped portion 5 b that is the periphery of the opening of the frame 5 and the frame facing surface 7 a of the transparent plate-like member 7 to reflect or absorb light emitted from the light emitting element 4. A member 7b is provided. The light that is reflected or absorbed by the reflection / absorption member 7b is not transmitted through the wavelength conversion member 6 after being emitted from the light emitting element 4, but after passing through the outside of the wavelength conversion member 6 or after being emitted from the light emitting element 4. The light is transmitted through the wavelength converting member and incident on the transparent plate-like member, and is emitted from the vicinity of the outer peripheral edge of the transparent plate-like member, that is, the light emitted from the light emitting element 4 that is not wavelength-converted.

波長変換部材６を透過しなかった発光素子４からの光や、波長変換部材６を透過した発光素子４からの光は、一部が透明板状部材７と波長変換部材６との界面や、界面などで反射されることにより、透明板状部材７の外周縁付近に到達し、透明板状部材７の外周縁付近から出射してしまう。透明板状部材７の外周縁付近から出射した発光素子４からの光は、波長変換部材６によって波長変換されずに発光装置１の照射光に含まれることになる。   The light from the light emitting element 4 that has not passed through the wavelength converting member 6 and the light from the light emitting element 4 that has passed through the wavelength converting member 6 are partly the interface between the transparent plate member 7 and the wavelength converting member 6, By being reflected at the interface or the like, it reaches the vicinity of the outer peripheral edge of the transparent plate-like member 7 and exits from the vicinity of the outer peripheral edge of the transparent plate-like member 7. The light from the light emitting element 4 emitted from the vicinity of the outer peripheral edge of the transparent plate member 7 is included in the irradiation light of the light emitting device 1 without being wavelength-converted by the wavelength conversion member 6.

透明板状部材７の外周縁付近から出射してしまう発光素子４からの光は、いわゆる漏れ光であり、意図しない光であるので、波長変換部材６で波長変換された蛍光が混色された白色光に漏れ光がさらに混ざり込んだ場合、意図しない色の光が発光装置１から照射されてしまうことになる。すなわち、透明板状部材７の外周縁付近では、発光素子４からの光が単一色の光として出射されることにより、発光装置１の照射領域において、白色光として照射される中央領域と、透明板状部材７の外周縁付近から出射される、発光素子４からの光によって照射される外周領域との間で色むらが生じやすくなる。発光素子４が照射す
る光の光量が比較的小さい場合は、漏れ光の影響による、発光装置１の照射領域における色むらも小さいが、光量が比較的大きくなると、漏れ光の影響も大きくなる。本実施形態のように発光素子４から出射される光の波長が３８０ｎｍ以上４２０ｎｍ以下である場合、観察される照射光は、上述のように照射領域の外縁部分がやや紫がかった白色光となってしまう。さらに、波長変換部材６で波長変換されずに発光装置１の外部に出射される、発光素子４から出射された光の漏れ光が増加すると、発光装置１から出射される、波長変換部材６で波長変換された蛍光が混色された白色光の出力が低下する。 The light emitted from the light emitting element 4 that is emitted from the vicinity of the outer peripheral edge of the transparent plate-like member 7 is so-called leakage light, and is unintended light. Therefore, the white color in which the fluorescence converted in wavelength by the wavelength conversion member 6 is mixed. If light leaks further into the light, light of an unintended color is emitted from the light emitting device 1. That is, in the vicinity of the outer peripheral edge of the transparent plate-like member 7, the light from the light emitting element 4 is emitted as light of a single color, so that in the irradiation area of the light emitting device 1, Color unevenness is likely to occur between the outer periphery of the plate-like member 7 and the outer peripheral area irradiated with light from the light emitting element 4. When the amount of light emitted from the light emitting element 4 is relatively small, the color unevenness in the irradiation region of the light emitting device 1 due to the influence of leakage light is small, but when the amount of light is relatively large, the influence of leakage light is also large. When the wavelength of light emitted from the light emitting element 4 is not less than 380 nm and not more than 420 nm as in the present embodiment, the observed irradiation light becomes white light with a slightly purple outer edge portion as described above. End up. Furthermore, when the leakage light of the light emitted from the light emitting element 4 that is emitted to the outside of the light emitting device 1 without being wavelength-converted by the wavelength converting member 6 increases, the wavelength converting member 6 that is emitted from the light emitting device 1 The output of white light in which the wavelength-converted fluorescence is mixed decreases.

本実施形態では、透明板状部材７ではなく波長変換部材６が発光素子４に対向しているので、発光素子４から出射された光は、波長変換部材６に入射され、波長変換部材６に分散された蛍光物質によって波長変換された蛍光が透明板状部材７に入射し、透明板状部材７から白色光として外部へ出射される。発光素子４から出射され、波長変換部材６を透過しなかった僅かな光や、波長変換されずに波長変換部材６を透過する僅かな光は、枠体５の開口周縁と透明板状部材７との間に設けられた反射吸収部材７ｂにより、反射または吸収されるので、透明板状部材７の外周縁付近から漏れ出る発光素子４からの光を低減することができる。透明板状部材７の外周縁付近に発光素子４からの一部の光が進行したとしても、透明板状部材７と反射吸収部材７ｂとの界面において、反射吸収部材７ｂによって吸収または反射されるので、透明板状部材７の外周縁付近から発光装置１の外部に出射してしまう漏れ光を低減することができる。反射吸収部材７ｂで発光素子４からの一部の光が吸収されると、吸収された光の分だけ透明板状部材７の外周縁付近から発光装置１の外部に出射される光を減らすことができる。   In this embodiment, since the wavelength conversion member 6, not the transparent plate member 7, faces the light emitting element 4, the light emitted from the light emitting element 4 is incident on the wavelength conversion member 6 and enters the wavelength conversion member 6. The fluorescence converted in wavelength by the dispersed fluorescent material enters the transparent plate member 7 and is emitted from the transparent plate member 7 as white light to the outside. A small amount of light emitted from the light emitting element 4 and not transmitted through the wavelength conversion member 6 or a small amount of light transmitted through the wavelength conversion member 6 without being subjected to wavelength conversion is transmitted through the opening periphery of the frame 5 and the transparent plate member 7. Is reflected or absorbed by the reflection / absorption member 7b provided between the light-emitting element 4 and the light from the light-emitting element 4 leaking from the vicinity of the outer peripheral edge of the transparent plate-like member 7 can be reduced. Even if part of the light from the light emitting element 4 travels in the vicinity of the outer peripheral edge of the transparent plate-like member 7, it is absorbed or reflected by the reflection / absorption member 7b at the interface between the transparent plate-like member 7 and the reflection / absorption member 7b. Therefore, it is possible to reduce leakage light that is emitted from the vicinity of the outer peripheral edge of the transparent plate-like member 7 to the outside of the light emitting device 1. When a part of the light from the light emitting element 4 is absorbed by the reflection absorbing member 7b, the light emitted from the vicinity of the outer peripheral edge of the transparent plate-like member 7 to the outside of the light emitting device 1 is reduced by the amount of the absorbed light. Can do.

これにより、発光装置１は、透明板状部材７を設けても、意図しない、発光素子４から出射される光の混色が発生することを防ぐことができるので、透明板状部材７による放熱性に優れ、所望の白色光を照射することができる。   Thereby, even if the light emitting device 1 is provided with the transparent plate-like member 7, it is possible to prevent unintentional color mixing of the light emitted from the light emitting element 4. It can be irradiated with desired white light.

反射吸収部材７ｂは、少なくとも透明板状部材７の枠体対向面７ａが、枠体５の開口周縁と重なる領域に設ければよい。反射吸収部材７ｂの大きさは、枠体５の段差部５ｂの大きさや透明板状部材７の大きさなどによって適宜設定すればよいが、例えば透明板状部材７の端面から内側に０．５〜５ｍｍの幅で設ければよい。   The reflection absorbing member 7 b may be provided in a region where at least the frame-facing surface 7 a of the transparent plate-like member 7 overlaps the opening periphery of the frame 5. The size of the reflection absorbing member 7b may be set as appropriate depending on the size of the stepped portion 5b of the frame 5, the size of the transparent plate member 7, etc., for example, 0.5 mm from the end surface of the transparent plate member 7 to the inside. A width of ˜5 mm may be provided.

反射吸収部材７ｂを構成する材料は、発光素子４から出射された光を反射または吸収可能な材料であれば、どのような材料であってもよく、金属材料、セラミック材料、樹脂材料などであってもよい。反射吸収部材７ｂは、枠体５と透明板状部材７との接合材を兼ねていてもよく、その場合は、反射吸収部材７ｂを構成する材料は、枠体５を構成する金属材料である第１金属材料とは異なる種類の第２金属材料であってもよい。反射吸収部材７ｂを構成する材料は、１種類に限らず複数種類の材料を積層して構成してもよい。   The material constituting the reflection / absorption member 7b may be any material as long as it can reflect or absorb light emitted from the light emitting element 4, and may be a metal material, a ceramic material, a resin material, or the like. May be. The reflection / absorption member 7 b may also serve as a bonding material between the frame 5 and the transparent plate-like member 7. In this case, the material constituting the reflection / absorption member 7 b is a metal material constituting the frame 5. A second metal material of a different type from the first metal material may be used. The material constituting the reflection / absorption member 7b is not limited to one type, and a plurality of types of materials may be laminated.

図５は、反射吸収部材７ｂの一例を拡大した拡大断面図である。反射吸収部材７ｂは、枠体５と透明板状部材７との間に設けられ、枠体５の開口周縁側からはんだ層８、金層９、ニッケル層１０、メタライズ層１１の順に積層されている。   FIG. 5 is an enlarged cross-sectional view of an example of the reflection absorbing member 7b. The reflection absorbing member 7 b is provided between the frame body 5 and the transparent plate-like member 7, and is laminated in the order of the solder layer 8, the gold layer 9, the nickel layer 10, and the metallized layer 11 from the opening peripheral side of the frame body 5. Yes.

はんだ層８は、枠体５の開口周縁において、枠体５の表面に、接合材であるはんだを層状に形成したものである。はんだ層８の厚みは、例えば、１０〜１００μｍである。   The solder layer 8 is formed by layering solder as a bonding material on the surface of the frame body 5 at the opening periphery of the frame body 5. The thickness of the solder layer 8 is, for example, 10 to 100 μm.

メタライズ層１１は、少なくとも透明板状部材７の枠体対向面７ａが、枠体５の開口周縁と重なる領域の表面に、モリブデンやマンガン等の高融点金属粉末に有機バインダー、可塑剤または溶剤等を添加混合して金属ペーストを印刷した後に焼結したり、銀や白金またはチタン等の金属材料を薄膜蒸着法などで薄膜形成した金属層である。メタライズ層１１の厚みは、例えば、１〜１００μｍである。ニッケル層１０は、メタライズ層１１の表面に、ニッケルめっきで形成されためっき層である。ニッケル層１０の厚みは、例えば、１〜１０μｍである。金層９は、ニッケル層１０の表面に金めっきで形成されためっき層である。金層９の厚みは、例えば、０．１〜５μｍである。   The metallized layer 11 has an organic binder, a plasticizer, a solvent, etc. on a refractory metal powder such as molybdenum or manganese on the surface of a region where at least the frame-facing surface 7a of the transparent plate-like member 7 overlaps the opening periphery of the frame 5 Is a metal layer in which a metal paste is printed after being printed and sintered, or a metal material such as silver, platinum or titanium is formed into a thin film by a thin film deposition method or the like. The thickness of the metallized layer 11 is, for example, 1 to 100 μm. The nickel layer 10 is a plated layer formed by nickel plating on the surface of the metallized layer 11. The thickness of the nickel layer 10 is, for example, 1 to 10 μm. The gold layer 9 is a plating layer formed on the surface of the nickel layer 10 by gold plating. The thickness of the gold layer 9 is, for example, 0.1 to 5 μm.

図４および図５に示す反射吸収部材７ｂの一例では、発光素子４から出射された光のうち、波長変換部材６の外周縁に向かう光の一部は、波長変換部材６に入射されずに、開口５ａと波長変換部材６との間に設けられる僅かな隙間に進行し、この隙間で反射を繰り返しながら、反射吸収部材７ｂの開口５ａ側の内周面に到達する。この時、反射吸収部材７ｂが、発光素子４から出射される光に対して反射率が低いモリブデンやマンガン等の高融点金属材料から成る場合には、反射吸収部材７ｂに到達した発光素子４からの光は、低反射率の反射吸収部材７ｂで吸収されやすくなる。よって、反射吸収部材７ｂは、発光素子４からの光を吸収するとともに、透明板状部材７に入射する発光素子４からの光を減らすことができるので、波長変換されずに透明板状部材７の外周縁付近から発光装置１の外部に出射してしまう光を低減することができる。また、波長変換部材６と反射吸収部材７ｂとの僅かな隙間で反射を繰り返しながら透明板状部材７に入射した光の一部は、透明板状部材７と外部空気との界面で反射され、反射吸収部材７ｂに入射されるとともに、透明板状部材７から出射する前に低反射率の反射吸収部材７ｂで吸収されやすくなる。さらに、透明板状部材７の枠体対向面７ａに設けられるメタライズ層１１が発光素子４から出射される光に対して反射率が低いモリブデンやマンガン等の高融点金属材料から成る場合には、反射吸収部材７ｂに入射された発光素子４からの光は、低反射率の反射吸収部材７ｂでより吸収されやすくなる。   In an example of the reflection / absorption member 7 b shown in FIGS. 4 and 5, a part of the light emitted from the light emitting element 4 toward the outer peripheral edge of the wavelength conversion member 6 is not incident on the wavelength conversion member 6. Then, it proceeds to a slight gap provided between the opening 5a and the wavelength conversion member 6, and reaches the inner peripheral surface of the reflection absorbing member 7b on the opening 5a side while repeating the reflection in the gap. At this time, when the reflection / absorption member 7b is made of a refractory metal material such as molybdenum or manganese having low reflectance with respect to the light emitted from the light-emitting element 4, the light-emitting element 4 that has reached the reflection / absorption member 7b is used. Is easily absorbed by the reflection-absorbing member 7b having a low reflectance. Therefore, since the reflection absorbing member 7b can absorb light from the light emitting element 4 and reduce light from the light emitting element 4 incident on the transparent plate member 7, the transparent plate member 7 is not subjected to wavelength conversion. Light emitted from the vicinity of the outer peripheral edge of the light emitting device 1 to the outside can be reduced. In addition, a part of the light incident on the transparent plate member 7 while being repeatedly reflected in the slight gap between the wavelength conversion member 6 and the reflection absorbing member 7b is reflected at the interface between the transparent plate member 7 and the external air, The light is incident on the reflection / absorption member 7b and is easily absorbed by the reflection / absorption member 7b having a low reflectance before exiting from the transparent plate-like member 7. Furthermore, when the metallized layer 11 provided on the frame-facing surface 7a of the transparent plate-like member 7 is made of a refractory metal material such as molybdenum or manganese having a low reflectance with respect to the light emitted from the light emitting element 4, The light from the light emitting element 4 incident on the reflection / absorption member 7b is more easily absorbed by the reflection / absorption member 7b having a low reflectance.

また、反射吸収部材７ｂが発光素子４から出射される光に対して反射率が高い銀や白金等の高反射率の金属材料から成る場合には、波長変換部材６に入射されずに、開口５ａと波長変換部材６との間に設けられる僅かな隙間に進行し、この隙間で反射を繰り返しながら、反射吸収部材７ｂに到達した光は、反射吸収部材７ｂによって反射されやすくなる。その結果、反射吸収部材７ｂで反射された発光素子４からの光は波長変換部材６へと向かい、波長変換部材６に入射されやすくなるので、波長変換されずに出射してしまう光を低減することができる。なお、透明板状部材７の枠体対向面７ａに設けられるメタライズ層１１が発光素子４から出射される光に対して反射率が低いモリブデンやマンガン等の高融点金属材料から成り、メタライズ層１１の下面に設けられる金属材料が発光素子４から出射される光に対して反射率が高い金属材料からなる場合には、上述の作用効果の相互作用により、波長変換されずに発光装置１の外部に出射される光をさらに低減することができる。   Further, when the reflection / absorption member 7b is made of a highly reflective metal material such as silver or platinum having a high reflectance with respect to the light emitted from the light emitting element 4, the aperture is not incident on the wavelength conversion member 6. The light that travels to a slight gap provided between 5a and the wavelength conversion member 6 and reaches the reflection / absorption member 7b while repeating reflection in the gap is likely to be reflected by the reflection / absorption member 7b. As a result, the light from the light emitting element 4 reflected by the reflection / absorption member 7b is directed to the wavelength conversion member 6 and is likely to be incident on the wavelength conversion member 6. Therefore, the light emitted without wavelength conversion is reduced. be able to. The metallized layer 11 provided on the frame-facing surface 7a of the transparent plate member 7 is made of a refractory metal material such as molybdenum or manganese having a low reflectance with respect to the light emitted from the light emitting element 4, and the metallized layer 11 When the metal material provided on the lower surface of the light source is made of a metal material having a high reflectivity with respect to the light emitted from the light emitting element 4, due to the interaction of the above-described effects, the outside of the light emitting device 1 is not converted without wavelength conversion. Can be further reduced.

以下では、本発明の他の実施形態について説明する。図６は、本発明の第２実施形態に係る発光装置１Ａを示す縦断面図である。第２実施形態の発光装置１Ａは、図４に示した第１実施形態の発光装置１と反射吸収部材７ｂの大きさが異なるだけであり、発光装置１と同じ部位については、同じ参照符号を付して説明を省略する。第２実施形態では、反射吸収部材７ｂは、平面視で枠体５の開口５ａの内方に延出して設けられる。これにより、波長変換部材６の外周縁部では、波長変換部材６と透明板状部材７との間に反射吸収部材７ｂが挟持されることになり、波長変換部材６と反射吸収部材７ｂとの僅かな隙間が無くなり、波長変換されていない、発光素子４から出射される光が透明板状部材７に直接入射してしまうことを抑制することができる。   In the following, another embodiment of the present invention will be described. FIG. 6 is a longitudinal sectional view showing a light emitting device 1A according to the second embodiment of the present invention. The light emitting device 1A of the second embodiment is different from the light emitting device 1 of the first embodiment shown in FIG. 4 only in the size of the reflection absorbing member 7b, and the same parts as those of the light emitting device 1 are denoted by the same reference numerals. A description thereof will be omitted. In the second embodiment, the reflection / absorption member 7b is provided to extend inward of the opening 5a of the frame 5 in a plan view. Thereby, in the outer periphery part of the wavelength conversion member 6, the reflection / absorption member 7b is sandwiched between the wavelength conversion member 6 and the transparent plate-like member 7, and the wavelength conversion member 6 and the reflection / absorption member 7b. A slight gap is eliminated, and light emitted from the light emitting element 4 that is not wavelength-converted can be prevented from directly entering the transparent plate member 7.

図７は、本発明の第３実施形態に係る発光装置１Ｂを示す縦断面図である。第３実施形態の発光装置１Ｂは、第１実施形態の発光装置１と波長変換部材６の大きさが異なり、反射吸収部材７ｂの構成が異なるだけであり、発光装置１と同じ部位については、同じ参照符号を付して説明を省略する。第３実施形態では、波長変換部材６が第１実施形態よりも大きく、波長変換部材６の外周部が、枠体５の開口周縁と透明板状部材７の枠体対向面７
ａとの間に挟持される。波長変換部材６は、透明板状部材７よりは小さい外形を有し、反射吸収部材１２は、枠体５の開口周縁と枠体対向面７ａとの間で、波長変換部材６を外囲するように設けられる。反射吸収部材１２は、樹脂材料中に少なくとも光吸収用のフィラーまたは光反射用のフィラーが分散された樹脂接合材で構成される。樹脂材料は、例えば、エポキシ樹脂やシリコーン樹脂、アクリル樹脂等を用いることができる。光吸収用のフィラーは、例えば酸化クロムや酸化鉄、酸化コバルト等の金属粉末を用いることができる。光反射用のフィラーは、例えば白色のアルミナ粉末や銀粉末、アルミニウム粉末等の金属粉末を用いることができる。 FIG. 7 is a longitudinal sectional view showing a light emitting device 1B according to the third embodiment of the present invention. The light emitting device 1B of the third embodiment is different from the light emitting device 1 of the first embodiment in the size of the wavelength conversion member 6, only the configuration of the reflection absorbing member 7b is different. The same reference numerals are assigned and description is omitted. In the third embodiment, the wavelength conversion member 6 is larger than that of the first embodiment, and the outer peripheral portion of the wavelength conversion member 6 includes the opening periphery of the frame body 5 and the frame body facing surface 7 of the transparent plate member 7.
It is pinched between a. The wavelength conversion member 6 has an outer shape smaller than that of the transparent plate member 7, and the reflection / absorption member 12 surrounds the wavelength conversion member 6 between the opening periphery of the frame 5 and the frame opposing surface 7 a. It is provided as follows. The reflection / absorption member 12 is formed of a resin bonding material in which at least a filler for light absorption or a filler for light reflection is dispersed in a resin material. As the resin material, for example, an epoxy resin, a silicone resin, an acrylic resin, or the like can be used. As the light-absorbing filler, for example, metal powder such as chromium oxide, iron oxide, and cobalt oxide can be used. As the light reflecting filler, for example, white alumina powder, silver powder, aluminum powder, or other metal powder can be used.

波長変換部材６が予め設けられた透明板状部材７を、波長変換部材６が枠体５の開口周縁の段差部５ｂに面するように当接して配置し、透明板状部材７と枠体５との隙間から未硬化の液状樹脂接合材を注入し、枠体５の開口周縁と枠体対向面７ａとの間だけでなく、透明板状部材７の側面７ｃと枠体５との間にも液状樹脂接合材を充填する。その後、未硬化の液状樹脂接合材は、加熱されたり、紫外光等の電磁波が照射されることによって硬化され、反射吸収部材１２が形成されるとともに、波長変換部材６と透明板状部材７とが反射吸収部材１２によって枠体５に接合される。さらに液状樹脂接合材を枠体５および透明板状部材７の上面にオーバーフローさせてもよい。これにより、波長変換部材６と透明板状部材７とは、反射吸収部材１２によってより強固に枠体５に接合されるとともに、透明板状部材７の外周縁付近から発光装置１Ｂの外部に漏れ出る、発光素子４からの光を低減することができる。   The transparent plate member 7 on which the wavelength conversion member 6 is provided in advance is disposed so that the wavelength conversion member 6 faces the stepped portion 5b at the opening periphery of the frame body 5, and the transparent plate member 7 and the frame body are arranged. An uncured liquid resin bonding material is injected from the gap between the frame 5 and not only between the opening periphery of the frame 5 and the frame facing surface 7a but also between the side 7c of the transparent plate-like member 7 and the frame 5. Also filled with a liquid resin bonding material. Thereafter, the uncured liquid resin bonding material is cured by being heated or irradiated with electromagnetic waves such as ultraviolet light to form the reflection / absorption member 12, and the wavelength conversion member 6 and the transparent plate-like member 7. Is joined to the frame 5 by the reflection absorbing member 12. Further, the liquid resin bonding material may overflow to the upper surfaces of the frame 5 and the transparent plate member 7. As a result, the wavelength conversion member 6 and the transparent plate-like member 7 are more firmly joined to the frame 5 by the reflection absorbing member 12 and leak from the vicinity of the outer peripheral edge of the transparent plate-like member 7 to the outside of the light emitting device 1B. The light emitted from the light emitting element 4 can be reduced.

波長変換部材６の外周部を、枠体５の開口周縁と透明板状部材７の枠体対向面７ａとの間に挟持させ、波長変換部材６下面の外周部を段差部５ｂに当接させて配置することにより、発光素子４から出射された光は、全て波長変換部材６に入射され、波長変換部材６を透過せずに透明板状部材７に直接入射する光は無いので、波長変換されずに出射してしまう発光素子４からの光を低減することができる。   The outer periphery of the wavelength conversion member 6 is sandwiched between the opening periphery of the frame 5 and the frame-facing surface 7a of the transparent plate member 7, and the outer periphery of the lower surface of the wavelength conversion member 6 is brought into contact with the step 5b. Since all the light emitted from the light emitting element 4 is incident on the wavelength conversion member 6 and there is no light that does not directly enter the transparent plate member 7 without passing through the wavelength conversion member 6, the wavelength conversion is performed. Light from the light emitting element 4 that is emitted without being emitted can be reduced.

図８は、本発明の第４実施形態に係る発光装置１Ｃを示す縦断面図である。第４実施形態の発光装置１Ｃは、第１実施形態の発光装置１と枠体５の段差部の形状が異なるだけであり、発光装置１と同じ部位については、同じ参照符号を付して説明を省略する。第４実施形態では、枠体５の開口周縁は、他の部分よりも一方主面側に一段低い段差が設けられている。枠体５の段差部が２段であり、第１実施形態と同様に透明板状部材７の枠体対向面７ａと反射吸収部材７ｂを介して接合される段差部５ｂと、この段差部５ｂよりもさらに一段低い第２段差部５ｄが設けられる。   FIG. 8 is a longitudinal sectional view showing a light emitting device 1C according to the fourth embodiment of the present invention. The light emitting device 1C of the fourth embodiment is different from the light emitting device 1 of the first embodiment only in the shape of the stepped portion of the frame body 5, and the same parts as the light emitting device 1 are denoted by the same reference numerals and described. Is omitted. In 4th Embodiment, the opening periphery of the frame 5 is provided with the level | step difference one step lower on the one main surface side than another part. The step portion of the frame body 5 has two steps, and the step portion 5b joined to the transparent plate-like member 7 via the reflection-absorbing member 7b and the step portion 5b as in the first embodiment, and the step portion 5b. A second step portion 5d that is one step lower than that is provided.

第２段差部５ｄは、平面視で波長変換部材６の外周部と重なるように位置し、波長変換部材６と接触していてもよく、接触していなくてもよい。このような第２段差部５ｄを設けることにより、発光素子４から出射された光のほぼ全てが波長変換部材６に入射される。波長変換部材６の外周部に向かう光のうち、波長変換部材６表面で反射した光の一部が、波長変換部材６と第２段差部５ｄとの間隙を進行する可能性があるが、この間隙内では波長変換部材６表面または第２段差部５ｄ表面で反射を繰り返すことになり、波長変換部材６に入射する可能性が高い。もし反射を繰り返しながら波長変換部材６に入射することなく間隙内を進行する光があったとしても、進行した先には反射吸収部材７ｂがあるので、反射吸収部材７ｂで反射、吸収されて発光装置１Ｃの外部に出射してしまう光は低減される。   The second step portion 5d is positioned so as to overlap the outer peripheral portion of the wavelength conversion member 6 in plan view, and may or may not be in contact with the wavelength conversion member 6. By providing the second step portion 5 d as described above, almost all of the light emitted from the light emitting element 4 is incident on the wavelength conversion member 6. Of the light traveling toward the outer periphery of the wavelength conversion member 6, a part of the light reflected on the surface of the wavelength conversion member 6 may travel through the gap between the wavelength conversion member 6 and the second step portion 5d. In the gap, reflection is repeated on the surface of the wavelength conversion member 6 or the surface of the second step portion 5d, and the possibility of entering the wavelength conversion member 6 is high. Even if there is light that travels in the gap without being incident on the wavelength conversion member 6 while repeating reflection, there is a reflection / absorption member 7b at the destination, so that light is reflected and absorbed by the reflection / absorption member 7b. Light that is emitted to the outside of the device 1C is reduced.

本発明の発光装置１は、１つで大光量の出力が可能であるので、たとえば、１つの発光装置１でスポットライトなどの点状発光装置として使用することも可能であり、複数の発光装置１を線状に並べて大光量の線状発光装置としてもよく、複数の発光装置１をアレイ状に並べて大光量の面状発光装置としてもよい。   Since one light emitting device 1 of the present invention can output a large amount of light, for example, one light emitting device 1 can be used as a point light emitting device such as a spotlight. 1 may be arranged in a line to form a linear light emitting device with a large amount of light, or a plurality of light emitting devices 1 may be arranged in an array to form a planar light emitting device with a large amount of light.

１，１Ａ，１Ｂ，１Ｃ 発光装置
２ 基板
２ａ 一方主面
３ 配線基板
３ａ 外部接続用電極
４ 発光素子
５ 枠体
５ａ 開口
５ｂ 段差部
５ｃ 凹部
５ｄ 第２段差部
６ 波長変換部材
７ 透明板状部材
７ａ 枠体対向面
７ｂ 反射吸収部材
７ｃ 側面
８ はんだ層
９ 金層
１０ ニッケル層
１１ メタライズ層 1, 1A, 1B, 1C Light emitting device 2 Substrate 2a One main surface 3 Wiring substrate 3a External connection electrode 4 Light emitting element 5 Frame 5a Opening 5b Stepped portion 5c Recessed portion 5d Second stepped portion 6 Wavelength converting member 7 Transparent plate member 7a Frame opposing surface 7b Reflective absorbing member 7c Side 8 Solder layer 9 Gold layer 10 Nickel layer 11 Metallized layer

Claims (6)

基板と、
前記基板の上面に位置する発光素子と、
前記発光素子を囲み、上側の開口の周縁に位置する開口周縁に段差部を有する枠体と、
前記発光素子から出射される光を透過し、前記開口および前記開口周縁を覆うとともに、前記基板側に位置する枠体対向面を有する透明板状部材と、
前記発光素子から出射される光に励起されて蛍光を発する蛍光物質が内部に分散された無機材料を含み、前記透明板状部材より外形が小さく、前記段差部と前記枠体対向面との間に位置する波長変換部材と、
前記波長変換部材の上面における外縁の外側から、前記外縁の内側にかけて位置し、前記発光素子から出射された光を反射または吸収する反射吸収部材と、を備えることを特徴とする発光装置。 A substrate,
A light emitting device located on the upper surface of the substrate;
A frame body having a step portion in the opening edge located on the light-emitting element enclose, the upper opening edge,
A transparent plate-shaped member that transmits light emitted from the light-emitting element , covers the opening and the periphery of the opening, and has a frame-facing surface located on the substrate side;
Is excited light emitted from the light emitting element comprises an inorganic material that fluorescent material dispersed therein to fluoresce, the rather small, outline of a transparent plate-like member, between said step portion the frame facing surface A wavelength conversion member located between the
And a reflection-absorbing member that reflects or absorbs light emitted from the light-emitting element, which is located from the outer edge of the upper surface of the wavelength conversion member to the inner side of the outer edge. 前記透明板状部材は、透明セラミック材料またはガラス材料からなることを特徴とする請求項１記載の発光装置。   2. The light emitting device according to claim 1, wherein the transparent plate member is made of a transparent ceramic material or a glass material. 前記無機材料は、透明セラミック材料またはガラス材料からなることを特徴とする請求項１または２記載の発光装置。   3. The light emitting device according to claim 1, wherein the inorganic material is made of a transparent ceramic material or a glass material. 前記段差部は、２段であり、前記基板の上面から遠い側の段差と前記枠体対向面との間に前記反射吸収部材が設けられ、前記基板の上面に近い側の段差は、平面視で前記波長変換部材の外周部と重なることを特徴とする請求項１〜３のいずれか１つに記載の発光装置。 The step portion is a two-stage, the reflection absorption member is provided between the step and the frame body facing surface farther from the top surface of the base plate, the side of the step near the top surface of the base plate, The light-emitting device according to claim 1, wherein the light-emitting device overlaps with an outer peripheral portion of the wavelength conversion member in a plan view. 前記反射吸収部材は、平面視で前記枠体の開口の内方に延出して設けられることを特徴とする請求項１〜３のいずれか１つに記載の発光装置。 The reflection absorption member, the light emitting device according to any one of claims 1-3, characterized in that it is provided extending inwardly of the opening of the frame body in a plan view. 前記波長変換部材の外周部が、平面視において前記開口周縁と前記枠体対向面とが重なる領域に位置し、
前記反射吸収部材は、前記枠体の前記開口周縁と前記枠体対向面との間で、前記波長変換部材を外囲するように設けられることを特徴とする請求項１〜３のいずれか１つに記載の発光装置。 The outer peripheral portion of the wavelength conversion member is located in a region where the peripheral edge of the opening and the frame-facing surface overlap in plan view,
The reflection absorption member between the opening edge and the frame body facing surface of the frame, claim 1-3, characterized in that it is provided with the wavelength conversion member to the outer circumference 1 The light-emitting device as described in one.
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