JP6556559B2 - 撮像装置および電子機器 - Google Patents
撮像装置および電子機器 Download PDFInfo
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- JP6556559B2 JP6556559B2 JP2015167335A JP2015167335A JP6556559B2 JP 6556559 B2 JP6556559 B2 JP 6556559B2 JP 2015167335 A JP2015167335 A JP 2015167335A JP 2015167335 A JP2015167335 A JP 2015167335A JP 6556559 B2 JP6556559 B2 JP 6556559B2
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- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
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- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Chemical & Material Sciences (AREA)
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Description
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
本実施の形態では、画素回路の駆動方法の一例について説明する。
本実施の形態では、画素回路の駆動方法の一例について説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体を有するトランジスタについて図面を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態4に示したトランジスタの構成要素について詳細を説明する。
本実施の形態では、実施の形態4で説明したトランジスタ101、トランジスタ107およびトランジスタ111の作製方法を説明する。
以下では、本発明の一態様に用いることのできる酸化物半導体膜の構造について説明する。
本発明の一態様に係る撮像装置および当該撮像装置を含む半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る撮像装置および当該撮像装置を含む半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図39に示す。
12 回路
21 配線
22 配線
23 配線
24 配線
25 配線
26 配線
27 配線
28 配線
29 配線
30 配線
31 配線
32 配線
40 シリコン基板
51 トランジスタ
52 トランジスタ
53 トランジスタ
54 トランジスタ
55 トランジスタ
56 トランジスタ
57 トランジスタ
58 トランジスタ
59 トランジスタ
60 フォトダイオード
70 トランジスタ
71 トランジスタ
80 絶縁層
90 回路部
92 回路部
101 トランジスタ
102 トランジスタ
103 トランジスタ
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
108 トランジスタ
109 トランジスタ
110 トランジスタ
111 トランジスタ
112 トランジスタ
115 基板
120 絶縁層
130 酸化物半導体層
130a 酸化物半導体層
130A 酸化物半導体膜
130b 酸化物半導体層
130B 酸化物半導体膜
130c 酸化物半導体層
130C 酸化物半導体膜
140 導電層
141 導電層
141a 導電層
142 導電層
150 導電層
151 導電層
152 導電層
156 レジストマスク
160 絶縁層
160A 絶縁膜
170 導電層
171 導電層
171A 導電膜
172 導電層
172A 導電膜
173 導電層
175 絶縁層
180 絶縁層
231 領域
232 領域
233 領域
331 領域
332 領域
333 領域
334 領域
335 領域
400 画素部
410 行ドライバ
420 A/D変換回路
430 列ドライバ
501 信号
502 信号
503 信号
504 信号
505 信号
506 信号
507 信号
508 信号
509 信号
510 期間
520 期間
511 期間
531 期間
610 期間
611 期間
612 期間
613 期間
621 期間
622 期間
623 期間
631 期間
901 筐体
902 筐体
903 表示部
904 表示部
905 マイク
906 スピーカー
907 操作キー
908 スタイラス
909 カメラ
911 筐体
912 表示部
919 カメラ
921 筐体
922 シャッターボタン
923 マイク
925 レンズ
927 発光部
931 筐体
932 表示部
933 リストバンド
939 カメラ
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 筐体
952 表示部
954 スピーカー
955 ボタン
956 入出力端子
957 マイク
959 カメラ
Claims (6)
- 第1の回路と、第2の回路と、を有する撮像装置であって、
前記第1の回路は、光電変換素子と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、第5のトランジスタと、第6のトランジスタと、第7のトランジスタと、第1の容量素子と、第2の容量素子と、第3の容量素子と、を有し、
前記第2の回路は、第8のトランジスタを有し、
前記光電変換素子の一方の端子は、前記第1のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第1の容量素子の一方の端子と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第1の容量素子の他方の端子と電気的に接続され、
前記第1の容量素子の他方の端子は、前記第2の容量素子の一方の端子と電気的に接続され、
前記第4のトランジスタのソースまたはドレインの一方は、前記第2の容量素子の他方の端子と電気的に接続され、
前記第4のトランジスタのソースまたはドレインの他方は、前記第5のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第6のトランジスタのソースまたはドレインの一方は、前記第5のトランジスタのソースまたはドレインの一方と電気的に接続され、
前記第3の容量素子の一方の端子は、前記第2の容量素子の他方の端子と電気的に接続され、
前記第3の容量素子の他方の端子は、前記第6のトランジスタのソースまたはドレインの他方と電気的に接続され、
前記第6のトランジスタのゲートは、前記第3の容量素子の一方の端子と電気的に接続され、
前記第7のトランジスタのソースまたはドレインの一方は、前記第6のトランジスタのソースまたはドレインの他方と電気的に接続され、
前記第7のトランジスタのソースまたはドレインの他方は、前記第8のトランジスタのソースまたはドレインの一方と電気的に接続されていることを特徴とする撮像装置。 - 請求項1において、
前記第2の回路は、第9のトランジスタを有し、前記第9のトランジスタのソースまたはドレインの一方は、前記第8のトランジスタのソースまたはドレインの他方と電気的に接続され、前記第9のトランジスタのゲートは、前記第8のトランジスタのゲートと電気的に接続され、前記第9のトランジスタのゲートは、前記第9のトランジスタのソースまたはドレインの他方と電気的に接続されていることを特徴とする撮像装置。 - 請求項1または2において、
前記第3のトランジスタのソースまたはドレインの他方は、前記光電変換素子の他方の端子と電気的に接続されていることを特徴とする撮像装置。 - 請求項1乃至3のいずれか一項において、
前記第1の回路は第4の容量素子を有し、前記第4の容量素子の一方の端子は、前記第3のトランジスタのソースまたはドレインの一方と電気的に接続されていることを特徴とする撮像装置。 - 請求項1乃至4のいずれか一項において、
前記第1乃至第8のトランジスタは、活性層に酸化物半導体を有し、当該酸化物半導体は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有することを特徴とする撮像装置。 - 請求項1乃至5のいずれか一項に記載の撮像装置と、
表示装置、操作キー、または、シャッターボタンと、
を有することを特徴とする電子機器。
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JP2019128107A JP6989569B2 (ja) | 2014-08-29 | 2019-07-10 | 撮像装置 |
JP2021195988A JP7200340B2 (ja) | 2014-08-29 | 2021-12-02 | 撮像装置 |
JP2022204261A JP7458467B2 (ja) | 2014-08-29 | 2022-12-21 | 撮像装置 |
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JP2020065294A (ja) * | 2014-11-10 | 2020-04-23 | 株式会社半導体エネルギー研究所 | 撮像装置 |
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WO2016120742A1 (ja) | 2015-01-27 | 2016-08-04 | 株式会社半導体エネルギー研究所 | 乗員保護装置 |
TWI710124B (zh) | 2015-01-30 | 2020-11-11 | 日商半導體能源研究所股份有限公司 | 成像裝置及電子裝置 |
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KR20160144314A (ko) | 2015-06-08 | 2016-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 그 동작 방법, 및 전자 기기 |
US10545526B2 (en) | 2015-06-25 | 2020-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Circuit, driving method thereof, and semiconductor device |
TWI713367B (zh) | 2015-07-07 | 2020-12-11 | 日商半導體能源研究所股份有限公司 | 成像裝置及其運作方法 |
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KR20170046128A (ko) | 2017-04-28 |
WO2016030801A1 (en) | 2016-03-03 |
JP7200340B2 (ja) | 2023-01-06 |
JP6989569B2 (ja) | 2022-01-05 |
KR102388997B1 (ko) | 2022-04-22 |
KR20220051431A (ko) | 2022-04-26 |
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JP2016140054A (ja) | 2016-08-04 |
US20160064443A1 (en) | 2016-03-03 |
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US9576994B2 (en) | 2017-02-21 |
TWI666937B (zh) | 2019-07-21 |
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JP2023052007A (ja) | 2023-04-11 |
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