JP6548086B2 - 膜形成方法 - Google Patents
膜形成方法 Download PDFInfo
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- JP6548086B2 JP6548086B2 JP2016099001A JP2016099001A JP6548086B2 JP 6548086 B2 JP6548086 B2 JP 6548086B2 JP 2016099001 A JP2016099001 A JP 2016099001A JP 2016099001 A JP2016099001 A JP 2016099001A JP 6548086 B2 JP6548086 B2 JP 6548086B2
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- 238000000034 method Methods 0.000 title claims description 44
- 230000015572 biosynthetic process Effects 0.000 title claims description 17
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
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- 229910052782 aluminium Inorganic materials 0.000 claims description 10
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
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- H—ELECTRICITY
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
2種の原料ガスを瞬間加熱して発生させた活性な分子種を交互に基板に繰り返し導くことで、室温でも高温材料を成膜できる。そのとき、基体の活性分子種の吸着量を増加させると、高密度の吸着層が生成される。高密度に吸着した反応可能な2種類の活性分子種の層は反応して化合物の膜が得られる。このとき、高密度に吸着するため、単純な原子層成長よりも高い成長速度が得られる。これが本実施形態の本質であり、特徴である。
以下、図1を用いて、化合物の膜として酸化アルミニュームの膜を基体の表面に成長させる実施例について説明する。
成長条件を実施例1と同じに固定にしたまま、基体112としてポリエチレンテレフタラート(PET)フィルムを置いた。成膜した膜と基体のPETフィルムの積層構造ができた。この積層構造のヘリューム(He)の透過試験を行った。フィルムの片側を1気圧のHeで満たし、反対側に漏れ出るHeの分圧を4重極の質量分析計で測定する方法で透過試験を行った。
反応室111の容積を50Lにして、実施例1と同じガス供給条件で成膜した。計算した分圧変化指数は0.0006である。
102;原料ガス蓄積容器2
105;バルブV1
106;バルブV2
107;瞬間加熱部1(HBガス加熱部1)
108;瞬間加熱部2(HBガス加熱部2)
111;反応室
112;基体
113;バルブV3
114;バルブV4
116;排気配管
201;圧力カーブ
301;供給ロール
302;回収ロール
303;ロール室
312;フィルム基体
412;複数基体
501;シリコンウエハ基体
502;レジスト
503;アルミナ膜
504;表面1
505;表面2
Claims (10)
- 蓄積容器と前記蓄積容器の導入口に設けられたバルブと前記蓄積容器の導出口に設けられたバルブとを有し、第1の原料ガスと第2の原料ガスのそれぞれを蓄積する蓄積機構と、
前記蓄積容器の導出口に設けられたバルブを介して前記蓄積容器に接続され、前記第1の原料ガスおよび前記第2の原料ガスを、熱交換器基体の表面に形成された流路の電気的に加熱された流路壁に垂直衝突させて熱交換することにより加熱する瞬間加熱部と、
前記瞬間加熱部の加熱温度より低い温度の基体が置かれた反応室と、
を備えた膜形成装置における膜形成方法であって、
前記蓄積容器の導出口に設けられたバルブを開にして前記蓄積機構に蓄積されていた分の前記第1の原料ガスと前記第2の原料ガスを噴出させて前記瞬間加熱部に通して、第1のガス単量体分子種と第2のガス単量体分子種とを生成させ、当該第1のガス単量体分子種と第2のガス単量体分子種とを前記基体が置かれ減圧された一定容量の前記反応室に突出させて圧力ピークを作るように供給し、膨張冷却させるとともに、前記第1のガス単量体分子種の分圧と前記第2のガス単量体分子種の分圧とを急激に上昇させ、前記基体の表面に前記第1のガス単量体分子種あるいは前記第2のガス単量体分子種を交互に繰り返し導いて前記第1のガス単量体分子種あるいは前記第2のガス単量体分子種を反応させて、前記基体の表面に化合物膜を形成させる膜形成方法。 - 前記第1の原料ガスが、シリコン、アルミニューム、ガリューム、チタン、亜鉛、インジュームの少なくとも一つの元素を含み、前記第2の原料ガスが、水または水溶液、またはアンモニアであることを特徴とする請求項1に記載の膜形成方法。
- 前記第1の原料ガスあるいは前記第2の原料ガスを突出させて急激に分圧を上昇させる周期に合わせて排気を遮断または排気速度を低速にして前記第1のガス単量体分子種あるいは前記第2のガス単量体分子種の分圧を上昇させることを特徴とする請求項1または請求項2のいずれかに記載の膜形成方法。
- 前記瞬間加熱部の前記流路の表面が、ルテニュームやニッケル、白金、鉄、クロム、アルミニューム、タンタルの元素のうち、一つ以上を含む金属で形成されていることを特徴とする請求項1から請求項3のいずれか1項に記載の膜形成方法。
- 前記瞬間加熱部の加熱温度が室温から700℃であることを特徴とする請求項1から請求項4のいずれか1項に記載の膜形成方法。
- 前記基体がフィルム基体であり前記反応室内を移動することを特徴とする請求項1から請求項5のいずれか1項に記載の膜形成方法。
- 前記基体が前記反応室内に複数備えられていることを特徴とする請求項1から請求項5のいずれか1項に記載の膜形成方法。
- 前記基体がシリコンウエハであることを特徴とする請求項1から請求項5および請求項7のいずれか1項に記載の膜形成方法。
- 前記基体がプラスチクスの容器であることを特徴とする請求項1から請求項5および請求項7のいずれか1項に記載の膜形成方法。
- 前記基体が有機ELデバイス、または液晶デバイス、または太陽電池、または構造パタンが形成されたデバイス基板であることを特徴とする請求項1から請求項5および請求項7のいずれか1項に記載の膜形成方法。
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KR1020170051012A KR102002150B1 (ko) | 2016-05-17 | 2017-04-20 | 막 형성 방법 |
US15/586,488 US10428422B2 (en) | 2016-05-17 | 2017-05-04 | Film-forming method |
TW106115213A TWI625417B (zh) | 2016-05-17 | 2017-05-09 | Film formation method |
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