JP4418001B2 - 原料供給装置 - Google Patents
原料供給装置 Download PDFInfo
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- JP4418001B2 JP4418001B2 JP2008063076A JP2008063076A JP4418001B2 JP 4418001 B2 JP4418001 B2 JP 4418001B2 JP 2008063076 A JP2008063076 A JP 2008063076A JP 2008063076 A JP2008063076 A JP 2008063076A JP 4418001 B2 JP4418001 B2 JP 4418001B2
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- JP
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- raw material
- pipe
- gas
- supply
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002994 raw material Substances 0.000 title claims description 71
- 239000007789 gas Substances 0.000 claims description 86
- 239000012159 carrier gas Substances 0.000 claims description 39
- 230000005587 bubbling Effects 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 35
- 238000010926 purge Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 22
- 239000010409 thin film Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 238000001179 sorption measurement Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000002052 molecular layer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7761—Electrically actuated valve
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85978—With pump
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (2)
- 原料液が収容された原料容器と、
前記原料容器に収容された前記原料液をバブリングするためのキャリアガスを導入する導入配管と、
前記原料液のバブリングにより発生して前記原料容器より導出した原料ガスが輸送される輸送配管と、
前記輸送配管に配置されて前記原料ガスを輸送するポンプと、
前記輸送配管より分岐して前記原料ガスを供給対象に供給するための供給配管と、
前記輸送配管より分岐して前記導入配管に連通する循環配管と、
前記導入配管の前記循環配管との接続部より前記キャリアガスの供給側に設けられた導入弁と、
前記供給配管に設けられた供給弁と、
前記循環配管に設けられた循環弁と、
前記導入弁,前記供給弁,および前記循環弁の開閉を制御する制御手段と
を少なくとも備え、
前記制御手段は、少なくとも前記供給弁と前記循環弁との開閉を異なる状態に制御する
ことを特徴とする原料供給装置。 - 請求項1記載の原料供給装置において、
前記導入弁と前記原料容器との間の前記導入配管の内部圧力を測定する圧力計を備え、
前記制御手段は、前記圧力計の測定結果により前記導入弁の開閉を制御する
ことを特徴とする原料供給装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008063076A JP4418001B2 (ja) | 2008-03-12 | 2008-03-12 | 原料供給装置 |
EP09720876.3A EP2251451B1 (en) | 2008-03-12 | 2009-02-26 | Raw material supplying device |
US12/921,771 US8382071B2 (en) | 2008-03-12 | 2009-02-26 | Raw material supply device |
KR1020107018621A KR101246921B1 (ko) | 2008-03-12 | 2009-02-26 | 원료공급장치 |
PCT/JP2009/053543 WO2009113400A1 (ja) | 2008-03-12 | 2009-02-26 | 原料供給装置 |
TW98107318A TW200947507A (en) | 2008-03-12 | 2009-03-06 | Material supplying apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008063076A JP4418001B2 (ja) | 2008-03-12 | 2008-03-12 | 原料供給装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009215635A JP2009215635A (ja) | 2009-09-24 |
JP4418001B2 true JP4418001B2 (ja) | 2010-02-17 |
Family
ID=41065069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008063076A Active JP4418001B2 (ja) | 2008-03-12 | 2008-03-12 | 原料供給装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8382071B2 (ja) |
EP (1) | EP2251451B1 (ja) |
JP (1) | JP4418001B2 (ja) |
KR (1) | KR101246921B1 (ja) |
TW (1) | TW200947507A (ja) |
WO (1) | WO2009113400A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10443127B2 (en) | 2013-11-05 | 2019-10-15 | Taiwan Semiconductor Manufacturing Company Limited | System and method for supplying a precursor for an atomic layer deposition (ALD) process |
JP2015190035A (ja) | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法 |
US10094018B2 (en) * | 2014-10-16 | 2018-10-09 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
US11072860B2 (en) | 2014-08-22 | 2021-07-27 | Lam Research Corporation | Fill on demand ampoule refill |
US11970772B2 (en) | 2014-08-22 | 2024-04-30 | Lam Research Corporation | Dynamic precursor dosing for atomic layer deposition |
JP7089902B2 (ja) * | 2018-02-28 | 2022-06-23 | 株式会社Screenホールディングス | 基板処理装置、基板処理装置における処理液排出方法、基板処理装置における処理液交換方法、基板処理装置における基板処理方法 |
JP7508428B2 (ja) | 2021-09-22 | 2024-07-01 | 株式会社東芝 | 半導体製造装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1269202A (en) * | 1968-02-14 | 1972-04-06 | Fordath Ltd | Improvements in the production of cores for use in the production of metal castings |
JPH0574758A (ja) | 1991-09-17 | 1993-03-26 | Mitsubishi Electric Corp | 化学気相成長装置 |
JPH05251348A (ja) | 1992-03-05 | 1993-09-28 | Mitsubishi Electric Corp | バブラおよびガス供給装置 |
JPH10130845A (ja) * | 1996-10-29 | 1998-05-19 | Mitsubishi Heavy Ind Ltd | 化学蒸着用蒸気発生装置 |
US6195504B1 (en) * | 1996-11-20 | 2001-02-27 | Ebara Corporation | Liquid feed vaporization system and gas injection device |
US6089184A (en) * | 1997-06-11 | 2000-07-18 | Tokyo Electron Limited | CVD apparatus and CVD method |
US5972117A (en) * | 1997-09-03 | 1999-10-26 | Applied Materials, Inc. | Method and apparatus for monitoring generation of liquid chemical vapor |
JP3706294B2 (ja) * | 2000-03-27 | 2005-10-12 | 東京エレクトロン株式会社 | 処理液供給装置及び処理液供給方法 |
JP4652860B2 (ja) * | 2004-04-27 | 2011-03-16 | 大陽日酸株式会社 | クリプトン又はキセノンの回収方法 |
JP5264039B2 (ja) * | 2004-08-10 | 2013-08-14 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成方法 |
US8202367B2 (en) * | 2006-03-30 | 2012-06-19 | Mitsui Engineering & Shipbuilding Co., Ltd. | Atomic layer growing apparatus |
US7562672B2 (en) * | 2006-03-30 | 2009-07-21 | Applied Materials, Inc. | Chemical delivery apparatus for CVD or ALD |
US8016945B2 (en) * | 2007-12-21 | 2011-09-13 | Applied Materials, Inc. | Hafnium oxide ALD process |
WO2010056576A1 (en) * | 2008-11-11 | 2010-05-20 | Praxair Technology, Inc. | Reagent dispensing apparatuses and delivery methods |
-
2008
- 2008-03-12 JP JP2008063076A patent/JP4418001B2/ja active Active
-
2009
- 2009-02-26 WO PCT/JP2009/053543 patent/WO2009113400A1/ja active Application Filing
- 2009-02-26 EP EP09720876.3A patent/EP2251451B1/en active Active
- 2009-02-26 KR KR1020107018621A patent/KR101246921B1/ko active IP Right Grant
- 2009-02-26 US US12/921,771 patent/US8382071B2/en active Active
- 2009-03-06 TW TW98107318A patent/TW200947507A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20100109559A (ko) | 2010-10-08 |
EP2251451A4 (en) | 2014-12-24 |
WO2009113400A1 (ja) | 2009-09-17 |
EP2251451A1 (en) | 2010-11-17 |
US20110000554A1 (en) | 2011-01-06 |
EP2251451B1 (en) | 2016-01-27 |
TW200947507A (en) | 2009-11-16 |
KR101246921B1 (ko) | 2013-03-25 |
US8382071B2 (en) | 2013-02-26 |
JP2009215635A (ja) | 2009-09-24 |
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