JP6530356B2 - 窒化物半導体製造装置の洗浄方法 - Google Patents
窒化物半導体製造装置の洗浄方法 Download PDFInfo
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- JP6530356B2 JP6530356B2 JP2016170842A JP2016170842A JP6530356B2 JP 6530356 B2 JP6530356 B2 JP 6530356B2 JP 2016170842 A JP2016170842 A JP 2016170842A JP 2016170842 A JP2016170842 A JP 2016170842A JP 6530356 B2 JP6530356 B2 JP 6530356B2
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- gas
- chlorine
- oxygen
- layer
- cleaning
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- 238000004140 cleaning Methods 0.000 title claims description 43
- 150000004767 nitrides Chemical class 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000007789 gas Substances 0.000 claims description 82
- 239000000460 chlorine Substances 0.000 claims description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 50
- 229910052801 chlorine Inorganic materials 0.000 claims description 50
- 239000001301 oxygen Substances 0.000 claims description 50
- 229910052760 oxygen Inorganic materials 0.000 claims description 50
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 47
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 34
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 11
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 7
- 239000010408 film Substances 0.000 description 27
- 238000005530 etching Methods 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 8
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910018509 Al—N Inorganic materials 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- -1 chlorine radicals Chemical class 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 229910018516 Al—O Inorganic materials 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (1)
- 窒化物半導体製造装置の付着物を除去するための洗浄方法において、前記付着物が、窒化ガリウムアルミニウム又は窒化アルミニウムの層と、窒化ガリウムの層との積層状態であり、付着物の表面側の層から順次付着物を除去する際に、除去対象となる層が窒化ガリウムの層のときには、塩素系ガスを洗浄ガスとして使用し、除去対象となる層が厚さ10nmを超える窒化ガリウムアルミニウム又は窒化アルミニウムの層のときには、前記塩素系ガスに酸素系ガスを添加した混合ガスを洗浄ガスとして使用し、除去対象となる層が厚さ10nm以下の窒化ガリウムアルミニウム又は窒化アルミニウムの層のときには、酸素系ガスを添加せずに塩素系ガスのみを洗浄ガスとして使用することを特徴とする窒化物半導体製造装置の洗浄方法。
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JP2018037571A JP2018037571A (ja) | 2018-03-08 |
JP6530356B2 true JP6530356B2 (ja) | 2019-06-12 |
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JP3398896B2 (ja) * | 1994-12-06 | 2003-04-21 | キヤノン販売株式会社 | ドライエッチング方法 |
JP3610397B2 (ja) * | 1996-07-11 | 2005-01-12 | 豊田合成株式会社 | 3族窒化物半導体の電極形成方法 |
JP2003229412A (ja) * | 2002-02-04 | 2003-08-15 | Matsushita Electric Ind Co Ltd | ドライエッチング方法および半導体素子 |
JP4836780B2 (ja) * | 2004-02-19 | 2011-12-14 | 東京エレクトロン株式会社 | 基板処理装置における処理室のクリーニング方法およびクリーニングの終点検出方法 |
JP4379208B2 (ja) * | 2004-06-03 | 2009-12-09 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
JP5021907B2 (ja) * | 2005-05-24 | 2012-09-12 | 大陽日酸株式会社 | 窒化物半導体製造装置の洗浄方法と洗浄装置 |
JP5302719B2 (ja) * | 2009-03-10 | 2013-10-02 | 大陽日酸株式会社 | 窒化物半導体製造装置部品の洗浄方法及び洗浄装置 |
JP5306935B2 (ja) * | 2009-08-04 | 2013-10-02 | 大陽日酸株式会社 | 反応生成物の検知方法 |
US20140290702A1 (en) * | 2011-09-27 | 2014-10-02 | Taiyo Nippon Sanso Corporation | Method for cleaning components of nitride semiconductor manufacturing apparatus and device for cleaning components of nitride semiconductor manufacturing apparatus |
JP2013187366A (ja) * | 2012-03-08 | 2013-09-19 | Hitachi Cable Ltd | 窒化物半導体の製造方法 |
JP2015032659A (ja) * | 2013-08-01 | 2015-02-16 | 大陽日酸株式会社 | 気相成長装置のクリーニング方法 |
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