JP6500255B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- JP6500255B2 JP6500255B2 JP2015203906A JP2015203906A JP6500255B2 JP 6500255 B2 JP6500255 B2 JP 6500255B2 JP 2015203906 A JP2015203906 A JP 2015203906A JP 2015203906 A JP2015203906 A JP 2015203906A JP 6500255 B2 JP6500255 B2 JP 6500255B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 229920005989 resin Polymers 0.000 claims description 66
- 239000011347 resin Substances 0.000 claims description 66
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 8
- 238000007872 degassing Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 238000009849 vacuum degassing Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- FZTPSPNAZCIDGO-UHFFFAOYSA-N barium(2+);silicate Chemical compound [Ba+2].[Ba+2].[O-][Si]([O-])([O-])[O-] FZTPSPNAZCIDGO-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
(樹脂シートの構成)
図1は、実施の形態に係る樹脂シート10の斜視図である。また、図2(a)、(b)は、それぞれ、図1の切断線A−A、B−Bに沿って切断された樹脂シート10の垂直断面図である。
図3(a)〜(d)は、実施の形態に係る発光装置の製造工程を示す垂直断面図である。
上記実施の形態によれば、発光素子が波長変換層に覆われ、かつリフレクタに囲まれた発光装置を簡易に製造することができる。
11 反射材含有部
12 蛍光体含有部
20 基板
21 発光素子
30、30a、30b、30c、30d 発光装置
31 リフレクタ
32 波長変換層
Claims (3)
- 格子状の反射材含有部と、前記反射材含有部の格子状の開口部を覆うとともに周りが前記反射材含有部によって囲まれた膜状の蛍光体含有部と、を備え、側面が枠で包囲されて保持された樹脂シートを準備する工程と、
複数の発光素子の底面が基板の上面に配置されるように前記複数の発光素子を前記基板上に搭載する工程と、
前記複数の発光素子の各々の周囲を前記複数の発光素子の上面の高さより大なる高さで前記反射材含有部が囲み、かつ前記複数の発光素子の各々の上方を前記反射材含有部の高さ以下の高さで前記蛍光体含有部が覆うように、前記樹脂シートの前記側面を前記枠が包囲して保持した状態で前記複数の発光素子が搭載された基板上に前記樹脂シートを被せる工程と、
前記樹脂シートを前記基板に被せた後、前記樹脂シートの側面を前記枠が包囲して保持した状態で前記樹脂シートを加熱により軟化させ、前記複数の発光素子の上面に前記蛍光体含有部を、前記複数の発光素子の側面に前記反射材含有部を密着させる工程と、
軟化した前記樹脂シートを硬化させた後、前記基板と前記樹脂シートを切断して、前記基板上の発光素子と、前記発光素子を囲む前記反射材含有部からなる環状のリフレクタと、前記発光素子の上面を覆う前記蛍光体含有部からなる波長変換層とを有する発光装置に個片化する工程と、
を含む発光装置の製造方法。 - 脱泡処理をしながら、前記樹脂シートを軟化させる、
請求項1に記載の発光装置の製造方法。 - 前記脱泡処理が真空脱泡である、
請求項2に記載の発光装置の製造方法。
Priority Applications (2)
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---|---|---|---|
JP2015203906A JP6500255B2 (ja) | 2015-10-15 | 2015-10-15 | 発光装置の製造方法 |
US15/287,567 US10243122B2 (en) | 2015-10-15 | 2016-10-06 | Method of manufacturing light-emitting device |
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JP2015203906A JP6500255B2 (ja) | 2015-10-15 | 2015-10-15 | 発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017076719A JP2017076719A (ja) | 2017-04-20 |
JP6500255B2 true JP6500255B2 (ja) | 2019-04-17 |
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US (1) | US10243122B2 (ja) |
JP (1) | JP6500255B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10224358B2 (en) * | 2017-05-09 | 2019-03-05 | Lumileds Llc | Light emitting device with reflective sidewall |
JP6696521B2 (ja) * | 2017-05-12 | 2020-05-20 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
CN108878625B (zh) | 2017-05-12 | 2023-05-05 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
JP6838528B2 (ja) | 2017-08-31 | 2021-03-03 | 日亜化学工業株式会社 | 基板の製造方法と発光装置の製造方法 |
JP6677232B2 (ja) | 2017-09-29 | 2020-04-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US10854794B2 (en) | 2017-12-20 | 2020-12-01 | Lumileds Llc | Monolithic LED array structure |
KR20190085479A (ko) | 2018-01-10 | 2019-07-18 | 서울반도체 주식회사 | 발광 장치 |
WO2019139357A1 (ko) * | 2018-01-10 | 2019-07-18 | 서울반도체주식회사 | 발광 장치 |
US10833233B2 (en) * | 2018-02-20 | 2020-11-10 | Epistar Corporation | Light-emitting device having package structure with quantum dot material and manufacturing method thereof |
US10553768B2 (en) * | 2018-04-11 | 2020-02-04 | Nichia Corporation | Light-emitting device |
WO2020212111A1 (en) * | 2019-04-18 | 2020-10-22 | Lumileds Holding B.V. | Lighting device |
FR3095550B1 (fr) * | 2019-04-26 | 2021-05-21 | Commissariat Energie Atomique | Procede de realisation d’un dispositif photo-emetteur et/ou photo-recepteur a grille de separation optique metallique |
JP7121294B2 (ja) * | 2019-09-10 | 2022-08-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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JP3844196B2 (ja) | 2001-06-12 | 2006-11-08 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
KR101728573B1 (ko) * | 2009-09-30 | 2017-04-19 | 다이니폰 인사츠 가부시키가이샤 | 플렉시블 디바이스용 기판, 플렉시블 디바이스용 박막 트랜지스터 기판, 플렉시블 디바이스, 박막 소자용 기판, 박막 소자, 박막 트랜지스터, 박막 소자용 기판의 제조 방법, 박막 소자의 제조 방법 및 박막 트랜지스터의 제조 방법 |
JP5745319B2 (ja) * | 2011-04-14 | 2015-07-08 | 日東電工株式会社 | 蛍光反射シート、および、発光ダイオード装置の製造方法 |
JP5700544B2 (ja) * | 2011-04-14 | 2015-04-15 | 日東電工株式会社 | 発光ダイオード装置の製造方法 |
JP5452645B2 (ja) | 2011-09-02 | 2014-03-26 | 三菱電機株式会社 | 発光装置及び発光装置の製造方法 |
JP2013118210A (ja) * | 2011-12-01 | 2013-06-13 | Citizen Holdings Co Ltd | 半導体発光装置及びその製造方法 |
US8907502B2 (en) * | 2012-06-29 | 2014-12-09 | Nitto Denko Corporation | Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device |
KR102075993B1 (ko) * | 2013-12-23 | 2020-02-11 | 삼성전자주식회사 | 백색 led 소자들을 제조하는 방법 |
JP6187277B2 (ja) * | 2014-01-21 | 2017-08-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP6755090B2 (ja) * | 2014-12-11 | 2020-09-16 | シチズン電子株式会社 | 発光装置及び発光装置の製造方法 |
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2015
- 2015-10-15 JP JP2015203906A patent/JP6500255B2/ja active Active
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2016
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Also Published As
Publication number | Publication date |
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US20170110635A1 (en) | 2017-04-20 |
JP2017076719A (ja) | 2017-04-20 |
US10243122B2 (en) | 2019-03-26 |
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