JP6194514B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229920002050 silicone resin Polymers 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000004382 potting Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
図1(a)、(b)、図2(a)〜(f)、図3(a)〜(d)、及び図4(a)、(b)は、本実施の形態に係る発光装置の製造工程の一例を示す垂直断面図である。以下、これらの図を用いて、本実施の形態に係る発光装置の製造工程について段階的に説明する。
まず、図1(a)に示される、基板1a上に発光構造体層1bが形成され、発光構造体層1b上に複数の電極1cが形成されたウエハ1を準備する。図1(a)においては、電極1cの図示を省略する。
まず、図2(a)に示されるように、ステンレス等からなるキャリアボード2の上に、両面接着シート3を介してウエハ1を固定する。このとき、ウエハ1の基板1a側の面が上を向くように、発光構造体層1b側の面を両面接着シート3に接触させる。
まず、図3(a)に示されるように、第1の発光素子7aを基板11上に所定の間隔で並べて実装する。このとき、各第1の発光素子7aの発光構造体層1b上の電極1cが、基板11上の図示されない電極に接続される。
まず、図4(a)に示されるように、COB(Chip On Board)パッケージの基板21上に、複数の第2の発光素子7bを実装する。複数の第2の発光素子7bは、基板21上に形成された環状のダム22の内側の領域に実装される。
上記の実施の形態によれば、蛍光体層を備えた発光素子の発光色度を測定してから発光装置に実装するため、発光素子を実装した後に蛍光体層を形成する場合と比較して、より正確に発光装置の発光色度を制御することができる。
1a 基板
1b 発光構造体層
1c 電極
4 蛍光体層
7 発光素子
7a 第1の発光素子
7b 第2の発光素子
10、20 発光装置
Claims (2)
- 基板上に発光構造体層が形成され、前記発光構造体層上に複数の電極が形成されたウェハを準備する工程と、
前記ウェハの前記基板側の面を覆うように、蛍光体を含む樹脂からなる蛍光体層を形成する工程と、
ダイシングテープを、前記ウェハを覆う前記蛍光体層に貼り付ける工程と、
前記ダイシングテープに貼り付けられた状態の前記蛍光体層に覆われた前記ウェハを裏返して、前記ウェハの前記発光構造体層側の面を上側に向けた状態で、前記ウェハ及び前記蛍光体層を分割し、各々が前記基板、前記発光構造体層、前記電極、及び前記蛍光体層を有する、複数の発光素子を形成する工程と、
前記ダイシングテープに貼り付けられ、かつ前記ウェハの前記発光構造体層側の面が上側に向いた状態のまま、前記複数の発光素子の発光色度を測定し、要求色度範囲内の発光色度を有する第1の発光素子と、前記要求色度範囲外の発光色度を有する第2の発光素子に分類する工程と、
前記第1の発光素子を用いて、1つの前記第1の発光素子を有し、前記要求色度範囲内の発光色度を有する第1の発光装置を形成する工程と、
前記第2の発光素子を用いて、複数の前記第2の発光素子を有し、前記要求色度範囲内の発光色度を有する第2の発光装置を形成する工程と、
を含む発光装置の製造方法。 - 前記複数の発光素子がフリップチップ型の素子である、
請求項1に記載の発光装置の製造方法。
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JP2014131222A JP6194514B2 (ja) | 2014-06-26 | 2014-06-26 | 発光装置の製造方法 |
US14/724,658 US9502317B2 (en) | 2014-06-26 | 2015-05-28 | Method for manufacturing light emitting device |
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JP2014131222A JP6194514B2 (ja) | 2014-06-26 | 2014-06-26 | 発光装置の製造方法 |
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JP2016009823A JP2016009823A (ja) | 2016-01-18 |
JP6194514B2 true JP6194514B2 (ja) | 2017-09-13 |
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JP (1) | JP6194514B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108461610A (zh) * | 2018-02-06 | 2018-08-28 | 惠州市华星光电技术有限公司 | 一种量子点led和制备方法 |
JP7106104B2 (ja) | 2018-07-02 | 2022-07-26 | 岐阜プラスチック工業株式会社 | 中空構造体 |
Families Citing this family (1)
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JP7189446B2 (ja) * | 2019-08-08 | 2022-12-14 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4081985B2 (ja) * | 2001-03-02 | 2008-04-30 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
KR100533635B1 (ko) * | 2003-11-20 | 2005-12-06 | 삼성전기주식회사 | Led 패키지 |
JP4667803B2 (ja) * | 2004-09-14 | 2011-04-13 | 日亜化学工業株式会社 | 発光装置 |
KR100828891B1 (ko) * | 2006-02-23 | 2008-05-09 | 엘지이노텍 주식회사 | Led 패키지 |
US8487330B2 (en) * | 2007-12-07 | 2013-07-16 | Kabushiki Kaisha Toshiba | Phosphor and LED light-emitting device using the same |
JP2011096936A (ja) * | 2009-10-30 | 2011-05-12 | Alpha- Design Kk | 半導体発光ディバイス製造装置 |
JP5670249B2 (ja) * | 2011-04-14 | 2015-02-18 | 日東電工株式会社 | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
JP2013041730A (ja) * | 2011-08-12 | 2013-02-28 | Sharp Corp | 光源モジュール |
JP2013135082A (ja) | 2011-12-26 | 2013-07-08 | Toyoda Gosei Co Ltd | 発光装置 |
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2014
- 2014-06-26 JP JP2014131222A patent/JP6194514B2/ja active Active
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- 2015-05-28 US US14/724,658 patent/US9502317B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108461610A (zh) * | 2018-02-06 | 2018-08-28 | 惠州市华星光电技术有限公司 | 一种量子点led和制备方法 |
JP7106104B2 (ja) | 2018-07-02 | 2022-07-26 | 岐阜プラスチック工業株式会社 | 中空構造体 |
Also Published As
Publication number | Publication date |
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US9502317B2 (en) | 2016-11-22 |
JP2016009823A (ja) | 2016-01-18 |
US20150380322A1 (en) | 2015-12-31 |
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