JP6487454B2 - 層状半導体構造体の製造方法 - Google Patents
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- -1 helium ions Chemical class 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
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- 239000012212 insulator Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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Description
イオンの外方拡散アニールの終了後、ドナー構造体のイオンプロファイルを変化させることなく(すなわち、イオンの外方拡散アニールに続いてイオンの再注入を行うことなく)、得られた接合構造体を剥離することができる。そのような実施形態では、多層構造体の製造時のプロセスに要する時間とコストを低減することが可能となる。イオンの外方拡散法は、絶縁デバイス上の完全空乏型シリコン等の比較的薄い誘電体層(例えば、約500Å未満)を用いるデバイスを製造する上で特に有用である。
多層構造体の典型的な作製プロセスでは、2つの別個の構造体が製造され、接合面に沿って互いに接合され、次いで、接合面とは異なり、かつ注入技術により形成された分離面(すなわち、“劈開面”)に沿って剥離される(劈開される)。一方の構造体は、通常、“ハンドル”構造体と呼ばれ、他方は通常、“ドナー”構造体と呼ばれる。処理後、得られた層状半導体構造体は、デバイス層と、該デバイス層を支持するハンドル層を含んでいる。いくつかの実施形態では(例えば、SOI構造体)、層状半導体構造体は、ハンドル層とデバイス層の間に配置された別の中間層を含んでいる。
本開示の実施形態によれば、ドナー構造体(例えば、その上に誘電体層が配置されたドナーウエハ)が、層状半導体構造体の製造時に用いるために前処理される。ドナー構造体は、シリコン、ゲルマニウム、シリコンゲルマニウム、窒化ガリウム、窒化アルミニウム、ガリウム砒素、インジウムガリウム砒素、およびそれらの組み合わせから構成されるドナーウエハを含んでもよい。いくつかの実施形態では、ドナーウエハは単結晶シリコンから構成される。
ハンドル構造体はハンドルウエハを含み、該ハンドルウエハは、多層構造体を製造するための一般的な材料のいずれか、例えば、シリコン、炭化ケイ素、サファイア、ゲルマニウム、シリコンゲルマニウム、窒化ガリウム、窒化アルミニウム、ガリウム砒素、インジウムガリウム砒素、石英およびそれらの組み合わせから得ることができる。ハンドル構造体10(図3)は、ハンドルウエハの上に堆積した誘電体層を含んでもよく、あるいは他の実施形態のように、ドナーウエハのみ(すなわち、誘電体層を含まない)でもよい。
接合界面の形成後、得られた接合構造体は、ドナーウエハ内の分離面または劈開面に沿って割れ目を生成させるに十分な条件に供される(図4)。一般的に、この割れ目は当該分野に公知の技術、例えば熱的および/または機械的に導入する劈開技術を用いて達成できる。いくつかの実施形態では、少なくとも約200℃、少なくとも約300℃、少なくとも約400℃、少なくとも約500℃、少なくとも約600℃、少なくとも約700℃またはさらに少なくとも約800℃で(温度の範囲は、例えば、約200℃から約800℃、または約250℃から約650℃)、少なくとも約10秒、少なくとも約1分、少なくとも約15分、少なくとも約1時間またはさらには少なくとも約3時間(より高い温度はより短いアニール時間を必要とし、より低い温度はより長いアニール時間を必要とする)、不活性(例えば、アルゴンまたは窒素)雰囲気下または周囲条件下で、接合構造体をアニールすることで割れ目形成が達成される。
単結晶シリコンウエハ上に配置されたSiO2層を有するドナー構造体に、エネルギー21keV、注入量0.7×1016イオン数/cm2でヘリウムを注入し、次いでエネルギー32keV、注入量0.35×1016イオン数/cm2で水素を注入した。次にイオン注入されたウエハを、イオンを外方拡散させるために、温度と時間を変化させて、アニールした。アニール後、ウエハには、水素またはヘリウムで再注入を行わなかった。プラズマ活性化と接合の前に、ウエハを洗浄した。ドナー構造体とハンドル構造体の接合面を、45秒間プラズマで活性化した。
Claims (24)
- 層状半導体構造体の製造時に用いる構造体であって、第2の構造体に接合するための接合面を有し、周囲雰囲気に囲まれた前記構造体の前処理方法であって、
前記構造体にイオンを注入して、前記構造体に劈開面を形成すること、
イオン注入された前記構造体をアニールして、前記イオンの一部を前記構造体から前記周囲雰囲気へと外方拡散させ、前記構造体と前記第2の構造体との接合時に前記接合面に生成する熱ボイドを減少させること、
イオンが外方拡散した前記構造体の接合面を活性化させること、を含む該前処理方法。 - 前記接合面をプラズマに暴露することにより、前記接合面を活性化させる、請求項1記載の前処理方法。
- 前記接合面が化学的に活性化される、請求項1記載の前処理方法。
- 前記接合面が水または水蒸気に暴露されて活性化され、前記接合面上に水を吸着する、請求項1記載の前処理方法。
- 前記接合面をプラズマに暴露し、続いて前記接合面上に水を吸着させることで、前記接合面が活性化される、請求項1記載の前処理方法。
- ヘリウムイオンと水素イオンとが前記構造体に共注入されて、前記劈開面を形成する、請求項1から5のいずれか1項に記載の前処理方法。
- イオン注入された前記構造体が、少なくとも約150℃で約500℃未満の温度でアニールされる、請求項1から6のいずれか1項に記載の前処理方法。
- イオン注入された前記構造体が、少なくとも約30秒アニールされる、請求項1から7のいずれか1項に記載の前処理方法。
- 前記構造体が、シリコン、炭化ケイ素、サファイア、ゲルマニウム、シリコンゲルマニウム、窒化ガリウム、窒化アルミニウム、ガリウム砒素、インジウムガリウム砒素、リン、石英およびそれらの組み合わせから構成されるウエハを含む、請求項1から8のいずれか1項に記載の前処理方法。
- 前記構造体が、単結晶シリコンウエハを含む、請求項1から8のいずれか1項に記載の前処理方法。
- イオン注入された前記構造体上に誘電体層を堆積させる工程をさらに含み、該堆積させる工程時に前記のイオンの外方拡散が生じる、請求項1から10のいずれか1項に記載の前処理方法。
- イオン注入された前記構造体上に誘電体層を堆積させる工程をさらに含み、該堆積させる工程とは別に前記のイオンの外方拡散が生じる、請求項1から10のいずれか1項に記載の前処理方法。
- 前記構造体が、ウエハ上に配置された誘電体層を含み、該誘電体層の表面が前記接合面である、請求項1から12のいずれか1項に記載の前処理方法。
- 前記構造体が、誘電体層を含まない、請求項1から8のいずれか1項に記載の前処理方法。
- 前記のアニールする工程の後には、前記構造体にイオンが注入されない、請求項1から14のいずれか1項に記載の前処理方法。
- 前記の注入する工程の前に、ウエハ上に誘電体層を堆積させることをさらに含む、請求項1から15のいずれか1項に記載の前処理方法。
- 前記の注入する工程の後に、ウエハ上に誘電体層を堆積させることをさらに含む、請求項1から15のいずれか1項に記載の前処理方法。
- デバイス層とハンドル層を含む層状半導体構造体の製造方法であって、
ハンドル構造体に接合させるための接合面を有するドナー構造体にイオンを注入して、前記ドナー構造体に劈開面を形成すること、
イオン注入された前記ドナー構造体をアニールして、前記イオンの一部を前記ドナー構造体から外方拡散させて、前記ドナー構造体にポストアニールイオンプロファイルを形成し、前記ドナー構造体と前記ハンドル構造体との接合時に前記接合面に生成する熱ボイドを減少させること、
ポストアニールイオンプロファイルを有するアニールされたドナー構造体の接合面を前記ハンドル構造体の接合面に接合して、接合構造体を形成すること、および
前記ドナー構造体の一部が前記ハンドル構造体に接合した状態を維持するように、劈開面で前記接合構造体を劈開して、前記デバイス層を形成することを含む、該製造方法。 - 前記ポストアニールイオンプロファイルが、前記ドナー構造体における水素とヘリウムのポストアニールイオンプロファイルである、請求項18記載の製造方法。
- 前記ドナー構造体にヘリウムイオンと水素イオンを共注入して、前記ドナー構造体に劈開面を形成することを含む、請求項18または19に記載の製造方法。
- イオンが外方拡散された前記ドナー構造体の接合面を活性化すること、および前記ハンドル構造体の接合面を活性化することを含む、請求項18から20のいずれか1項に記載の製造方法。
- 前記ドナー構造体と前記ハンドル構造体の少なくとも一方が、接合前に自然のSiO2層を含み、該自然のSiO2層は前記デバイス層と前記ハンドル層の間に配置された中間層の少なくとも一部を形成する、請求項18から21のいずれか1項に記載の製造方法。
- 前記ドナー構造体が、ドナー構造体接合面を含むドナーウエハを有し、前記ハンドル構造体が、ハンドル構造体接合面を含むハンドルウエハを有し、前記ドナーウエハが前記ハンドルウエハに直接接合されている、請求項18から21のいずれか1項に記載の製造方法。
- 前記層状半導体構造体が、シリコン−オン−インシュレーター構造である、請求項18から23のいずれか1項に記載の製造方法。
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