JP6482692B2 - 太陽電池素子 - Google Patents
太陽電池素子 Download PDFInfo
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- JP6482692B2 JP6482692B2 JP2018006444A JP2018006444A JP6482692B2 JP 6482692 B2 JP6482692 B2 JP 6482692B2 JP 2018006444 A JP2018006444 A JP 2018006444A JP 2018006444 A JP2018006444 A JP 2018006444A JP 6482692 B2 JP6482692 B2 JP 6482692B2
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- silicon substrate
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 162
- 229910052710 silicon Inorganic materials 0.000 claims description 156
- 239000010703 silicon Substances 0.000 claims description 156
- 239000000758 substrate Substances 0.000 claims description 144
- 239000004020 conductor Substances 0.000 claims description 74
- 238000002161 passivation Methods 0.000 claims description 70
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 62
- 229910052782 aluminium Inorganic materials 0.000 claims description 57
- 239000011800 void material Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 description 69
- 238000000034 method Methods 0.000 description 28
- 238000009792 diffusion process Methods 0.000 description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 15
- 229910052709 silver Inorganic materials 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- 229910000676 Si alloy Inorganic materials 0.000 description 14
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000010304 firing Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 239000011863 silicon-based powder Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Photovoltaic Devices (AREA)
Description
図1〜3に本実施形態の太陽電池素子10を示す。太陽電池素子10は、主に光が入射する受光面(表面)である第1主面10aと、この第1主面10aの反対側に位置する主面(裏面)である第2主面10bとを有する。
次に、太陽電池素子10の製造方法の各工程について詳細に説明する。
1a:第1主面
1b:第2主面
2 :第1半導体層(p型半導体層)
3 :第2半導体層(n型半導体層)
4 :第3半導体層(BSF層)
5 :反射防止層
6 :表面電極
6a:表面第1電極
6b:表面第2電極
6c:表面第3電極
7 :裏面電極
7a:裏面第1電極
7b:裏面第2電極
9 :パッシベーション層
91:孔部
91a:第1孔部
91b:第2孔部
10 :太陽電池素子
10a:第1主面
10b:第2主面
11 :窪み部
12 :ボイド部
13 :第1導体部
14 :第2導体部
Claims (3)
- 一主面に複数の窪み部を有するシリコン基板と、
該シリコン基板の前記一主面の上に配置され、前記窪み部に対応する部位に孔部を有するパッシベーション層と、
該パッシベーション層の前記孔部に配置されている第1導体部と、
前記パッシベーション層の上に配置され、前記第1導体部に接続している、アルミニウムを含有する電極と、
前記シリコン基板の前記窪み部内に配置されるとともに、前記シリコン基板および前記第1導体部のそれぞれに接続している、アルミニウムおよびシリコンを含有する第2導体部と、
前記シリコン基板の前記窪み部内に位置している、前記第2導体部が配置されていないボイド部とを備え、
前記シリコン基板の厚み方向において、前記窪み部と前記パッシベーション層との間に、前記第2導体部および前記ボイド部が位置している太陽電池素子。 - 前記窪み部と前記パッシベーション層との間において、前記第2導体部の体積が前記ボイド部の体積よりも小さい、請求項1に記載の太陽電池素子。
- 前記シリコン基板の前記窪み部内に、前記第2導体部に接しているBSF層がさらに配置されている、請求項1または請求項2に記載の太陽電池素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2014192412 | 2014-09-22 | ||
JP2014192412 | 2014-09-22 |
Related Parent Applications (1)
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JP2016550155A Division JP6280231B2 (ja) | 2014-09-22 | 2015-09-17 | 太陽電池素子 |
Publications (2)
Publication Number | Publication Date |
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JP2018061067A JP2018061067A (ja) | 2018-04-12 |
JP6482692B2 true JP6482692B2 (ja) | 2019-03-13 |
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JP2016550155A Active JP6280231B2 (ja) | 2014-09-22 | 2015-09-17 | 太陽電池素子 |
JP2018006444A Active JP6482692B2 (ja) | 2014-09-22 | 2018-01-18 | 太陽電池素子 |
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Country Status (5)
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---|---|
US (1) | US20170194519A1 (ja) |
EP (1) | EP3200242A4 (ja) |
JP (2) | JP6280231B2 (ja) |
CN (1) | CN107078177A (ja) |
WO (1) | WO2016047564A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6714275B2 (ja) | 2016-08-23 | 2020-06-24 | ナミックス株式会社 | 導電性ペースト及び太陽電池 |
JP6339754B1 (ja) | 2016-09-28 | 2018-06-06 | 京セラ株式会社 | 太陽電池素子 |
WO2018173125A1 (ja) * | 2017-03-21 | 2018-09-27 | 三菱電機株式会社 | 太陽電池セルおよび太陽電池モジュール |
JP7173960B2 (ja) * | 2017-03-27 | 2022-11-16 | 東洋アルミニウム株式会社 | 太陽電池用ペースト組成物 |
JP6539010B1 (ja) * | 2017-11-30 | 2019-07-03 | 京セラ株式会社 | 太陽電池素子 |
JP6864642B2 (ja) | 2018-03-22 | 2021-04-28 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
CN109545976B (zh) * | 2018-11-26 | 2020-10-27 | 西安交通大学 | 绒面均匀空穴或电子传输膜的液膜高温高浓速涂原位速干制备方法 |
CN115534502B (zh) * | 2021-06-30 | 2024-05-28 | 晶科能源(海宁)有限公司 | 丝网印刷网板、太阳能电池电极的形成方法及太阳能电池 |
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JP4378366B2 (ja) * | 2005-08-04 | 2009-12-02 | キヤノン株式会社 | 発光素子アレイ |
US20070295399A1 (en) * | 2005-12-16 | 2007-12-27 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
EP2510552A4 (en) * | 2009-12-09 | 2014-11-05 | Solexel Inc | HIGHLY EFFICIENT PHOTOVOLTAIC BACK CONTACT STRUCTURES FOR SOLAR CELLS AND METHOD OF MANUFACTURING THEM BY USING SEMICONDUCTOR WAFERS |
JP2013048126A (ja) * | 2009-12-14 | 2013-03-07 | Mitsubishi Electric Corp | 光起電力装置およびその製造方法 |
KR101130196B1 (ko) * | 2010-11-11 | 2012-03-30 | 엘지전자 주식회사 | 태양 전지 |
JP5645734B2 (ja) * | 2011-03-31 | 2014-12-24 | 京セラ株式会社 | 太陽電池素子 |
JP2013115256A (ja) * | 2011-11-29 | 2013-06-10 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
JP2013115258A (ja) * | 2011-11-29 | 2013-06-10 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
JP5924945B2 (ja) * | 2012-01-11 | 2016-05-25 | 東洋アルミニウム株式会社 | ペースト組成物 |
TW201411866A (zh) * | 2012-09-07 | 2014-03-16 | Unitech Printed Circuit Board Corp | 太陽能電池背面鈍化局部擴散結構及其製造方法 |
CN202930393U (zh) * | 2012-11-12 | 2013-05-08 | 横店集团东磁股份有限公司 | 一种减少太阳能电池片翘曲的铝背场结构 |
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2015
- 2015-09-17 CN CN201580048834.2A patent/CN107078177A/zh active Pending
- 2015-09-17 JP JP2016550155A patent/JP6280231B2/ja active Active
- 2015-09-17 WO PCT/JP2015/076546 patent/WO2016047564A1/ja active Application Filing
- 2015-09-17 EP EP15844564.3A patent/EP3200242A4/en not_active Withdrawn
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2017
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