JP6482454B2 - 電子部品の製造方法ならびに電子部品製造装置 - Google Patents
電子部品の製造方法ならびに電子部品製造装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 112
- 229920005989 resin Polymers 0.000 claims description 103
- 239000011347 resin Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 77
- 238000007789 sealing Methods 0.000 claims description 76
- 238000000227 grinding Methods 0.000 claims description 72
- 230000007246 mechanism Effects 0.000 claims description 57
- 238000005520 cutting process Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 description 24
- 238000005498 polishing Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000007689 inspection Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
図6は、樹脂封止機構と研削機構とを1つの装置に組み込んだ例を示し、図7は、研削機構と切断機構とを1つの装置に組み込んだ例を示す。
Claims (10)
- 複数の機能要素を基板の主面に設ける工程と、
前記基板に形成された前記複数の機能要素を樹脂封止する工程と、
前記基板の裏面に裏面電極を形成する工程と、
テーブルが有する第1の凹部に前記裏面電極を収納した状態で前記基板を前記テーブルに固定したまま前記樹脂封止に用いた樹脂の上面を研削して前記樹脂の厚みを減じる工程と、
前記基板および前記樹脂をブレードにより切断して樹脂封止された電子部品を個片化する工程とを備え、
前記個片化する工程において、前記電子部品は、前記樹脂の厚みを減じる工程において研削された面を前記テーブル側にした状態で前記テーブル上に載置され、前記ブレードの先端が前記テーブルが有する第2の凹部に受け入れられる、電子部品の製造方法。 - 複数の半導体チップを基板の主面に実装する工程と、
前記基板に実装された前記複数の半導体チップを樹脂封止する工程と、
前記基板の裏面に裏面電極を形成する工程と、
テーブルが有する第1の凹部に前記裏面電極を収納した状態で前記基板を前記テーブルに固定したまま前記樹脂封止に用いた樹脂の上面を研削して前記樹脂の厚みを減じる工程と、
前記基板および前記樹脂をブレードにより切断して樹脂封止された電子部品を個片化する工程とを備え、
前記個片化する工程において、前記電子部品は、前記樹脂の厚みを減じる工程において研削された面を前記テーブル側にした状態で前記テーブル上に載置され、前記ブレードの先端が前記テーブルが有する第2の凹部に受け入れられる、電子部品の製造方法。 - 前記半導体チップはフリップチップボンディングにより前記基板に実装され、
前記半導体チップが露出するように前記樹脂の上面が研削される、請求項2に記載の電
子部品の製造方法。 - 前記樹脂の上面と前記半導体チップの上面とを研削することによって前記樹脂の厚みと前記半導体チップの厚みとを減じる工程を備えた、請求項3に記載の電子部品の製造方法。
- 複数の半導体チップを基板の主面に実装する工程と、
前記基板の裏面に裏面電極を形成する工程と、
テーブルが有する第1の凹部に前記裏面電極を収納した状態で前記基板を前記テーブルに固定したまま前記半導体チップの上面を研削して前記半導体チップの厚みを減じる工程と、
前記基板をブレードにより切断して電子部品を個片化する工程とを備え、
前記個片化する工程において、前記電子部品は、前記樹脂の厚みを減じる工程において研削された面を前記テーブル側にした状態で前記テーブル上に載置され、前記ブレードの先端が前記テーブルが有する第2の凹部に受け入れられる、電子部品の製造方法。 - 請求項1〜5のいずれか1項に記載の電子部品の製造方法に用いられる電子部品製造装置であって、
前記基板上に設けられた前記複数の機能要素を樹脂封止する機能を有する樹脂封止機構と、
基板上に設けられた複数の機能要素を封止する樹脂の上面を研削する研削機構と、
前記基板および前記樹脂を切断して個片化された電子部品を作製する機能を有する切断機構とを備え、
前記研削機構と前記切断機構とが1つの装置に組み込まれている、電子部品製造装置。 - 少なくとも前記樹脂の上面にマークを付ける機能を有するマーキング機構をさらに備える、請求項6に記載の電子部品製造装置。
- 前記樹脂封止機構と前記研削機構とは互いに着脱可能である、請求項6または請求項7に記載の電子部品製造装置。
- 前記マーキング機構と前記研削機構とは互いに着脱可能である、請求項7に記載の電子部品製造装置。
- 前記樹脂封止機構および前記マーキング機構と前記研削機構とは互いに着脱可能である、請求項7に記載の電子部品製造装置。
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JP2015247561A JP6482454B2 (ja) | 2015-12-18 | 2015-12-18 | 電子部品の製造方法ならびに電子部品製造装置 |
PCT/JP2016/073389 WO2017104169A1 (ja) | 2015-12-18 | 2016-08-09 | 電子部品およびその製造方法ならびに電子部品製造装置 |
CN201680072617.1A CN108431933B (zh) | 2015-12-18 | 2016-08-09 | 电子零件及其制造方法和电子零件制造装置 |
KR1020187017784A KR102261309B1 (ko) | 2015-12-18 | 2016-08-09 | 전자 부품 및 그 제조 방법 및 전자 부품 제조 장치 |
TW105126044A TW201724391A (zh) | 2015-12-18 | 2016-08-16 | 電子元件以及其製造方法與電子元件製造裝置 |
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JP2019012714A (ja) * | 2017-06-29 | 2019-01-24 | 株式会社ディスコ | 半導体パッケージの製造方法 |
JP6609674B1 (ja) * | 2018-07-11 | 2019-11-20 | 浜松ホトニクス株式会社 | 光検出装置及び光検出装置の製造方法 |
JP6994279B1 (ja) * | 2021-05-12 | 2022-01-14 | ハイソル株式会社 | 研磨方法、及び研磨用半導体チップ保持構造 |
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JPS552112U (ja) * | 1978-06-21 | 1980-01-09 | ||
JPH04297056A (ja) | 1991-03-08 | 1992-10-21 | Sony Corp | 半導体装置の製造方法 |
JPH06120295A (ja) * | 1992-10-02 | 1994-04-28 | Mitsubishi Electric Corp | 半導体装置 |
JP4803855B2 (ja) * | 1999-02-09 | 2011-10-26 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP3339838B2 (ja) * | 1999-06-07 | 2002-10-28 | ローム株式会社 | 半導体装置およびその製造方法 |
DE10106346B4 (de) * | 2001-02-09 | 2007-03-01 | Infineon Technologies Ag | Elektronisches Bauteil |
JP3854814B2 (ja) * | 2001-04-06 | 2006-12-06 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2003152005A (ja) * | 2001-11-19 | 2003-05-23 | Towa Corp | 半導体素子の樹脂封止成形装置 |
JP4859814B2 (ja) * | 2007-11-06 | 2012-01-25 | 株式会社東京精密 | ウェーハ処理装置 |
JP5192790B2 (ja) * | 2007-11-28 | 2013-05-08 | Towa株式会社 | 基板の切断方法及び装置 |
JP3142888U (ja) * | 2008-03-28 | 2008-07-03 | 幸三 松井 | パタークラブ |
JP2010073803A (ja) * | 2008-09-17 | 2010-04-02 | Nec Electronics Corp | 半導体装置の製造方法 |
TW201032300A (en) * | 2009-02-27 | 2010-09-01 | Advanced Semiconductor Eng | Chip scale package and method of fabricating the same |
JP2011222706A (ja) * | 2010-04-08 | 2011-11-04 | Canon Inc | 半導体パッケージ |
US9318404B2 (en) * | 2013-02-05 | 2016-04-19 | Stats Chippac, Ltd. | Semiconductor device and method of forming stress relieving vias for improved fan-out WLCSP package |
JP2014165324A (ja) * | 2013-02-25 | 2014-09-08 | Disco Abrasive Syst Ltd | パッケージ基板の加工方法 |
US9252092B2 (en) * | 2013-07-24 | 2016-02-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming through mold hole with alignment and dimension control |
JP6235391B2 (ja) * | 2014-03-27 | 2017-11-22 | Towa株式会社 | 検査用治具、切断装置及び切断方法 |
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TW201724391A (zh) | 2017-07-01 |
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KR102261309B1 (ko) | 2021-06-07 |
CN108431933A (zh) | 2018-08-21 |
WO2017104169A1 (ja) | 2017-06-22 |
KR20180095829A (ko) | 2018-08-28 |
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