JP6472191B2 - Plug connector - Google Patents
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- JP6472191B2 JP6472191B2 JP2014172752A JP2014172752A JP6472191B2 JP 6472191 B2 JP6472191 B2 JP 6472191B2 JP 2014172752 A JP2014172752 A JP 2014172752A JP 2014172752 A JP2014172752 A JP 2014172752A JP 6472191 B2 JP6472191 B2 JP 6472191B2
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- 238000007747 plating Methods 0.000 claims description 196
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 164
- 238000012360 testing method Methods 0.000 description 56
- 239000010949 copper Substances 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000011669 selenium Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 229910052711 selenium Inorganic materials 0.000 description 8
- 229910052787 antimony Inorganic materials 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000007859 condensation product Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000005461 lubrication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 2
- 150000003498 tellurium compounds Chemical class 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- VUDSHMKBJUAWBF-UHFFFAOYSA-N S(=S)=S.C(=O)C=C Chemical compound S(=S)=S.C(=O)C=C VUDSHMKBJUAWBF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- PEEDYJQEMCKDDX-UHFFFAOYSA-N antimony bismuth Chemical compound [Sb].[Bi] PEEDYJQEMCKDDX-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Description
本発明は、主として自動車に使用される差し込みコネクタに関する。 The present invention relates to a plug connector used mainly in an automobile.
例えば、自動車のエンジン周りの部品は、通常ボルトを用いて固定すると共に、電気的な接続がなされている。なお、ボルトの表面には、通電性を高めるため、Ｓｎ（すず）めっきがなされている。
このように、ボルトを用いることで、取り付け部分の接触面積を広げることができると共に、電気的な接続信頼性を高めることができる。
For example, parts around an automobile engine are usually fixed with bolts and electrically connected. In addition, Sn (tin) plating is made on the surface of the bolt in order to improve electrical conductivity.
Thus, by using the bolt, the contact area of the attachment portion can be increased, and the electrical connection reliability can be increased.
しかし、ボルトを用いる場合、例えば、上記した部品のメンテナンス時、この部品の取り付け取り外し作業を行う際に、ボルトを締めたり緩めたりする作業を行う必要があり、作業性が悪かった。
そこで、雌端子に雄端子を嵌め込む差し込みコネクタが提案されている（例えば、特許文献１参照）。
However, when bolts are used, for example, when performing the above-described maintenance of the parts, it is necessary to perform the work of tightening or loosening the bolts when performing the work of attaching and detaching the parts.
Therefore, an insertion connector has been proposed in which a male terminal is fitted into a female terminal (see, for example, Patent Document 1).
しかしながら、差し込みコネクタは、上記したボルトと比較して接続信頼性が低い。このため、差し込みコネクタの表面に、通電性の良い金属、例えば、純Ａｇ（銀）を被覆していたが、差し込みコネクタの使用により、被覆層が磨耗しても下地めっきが露出しないように、被覆厚みを厚くする（純Ａｇの使用量を増やす）必要があり、製造コストの上昇を招いていた。 However, the plug connector has low connection reliability compared to the above-described bolt. For this reason, the surface of the plug connector was coated with a metal having good electrical conductivity, for example, pure Ag (silver), but by using the plug connector, even if the coating layer was worn, the base plating was not exposed. It was necessary to increase the coating thickness (increase the amount of pure Ag used), leading to an increase in manufacturing cost.
本発明はかかる事情に鑑みてなされたもので、安定した電気的な接続信頼性と、繰り返し摺動に対する耐磨耗性を備え、経済性にも優れる差し込みコネクタを提供することを目的とする。 The present invention has been made in view of such circumstances, and an object thereof is to provide a plug connector that has stable electrical connection reliability, wear resistance against repeated sliding, and is excellent in economy.
前記目的に沿う本発明に係る差し込みコネクタは、雌端子に雄端子を嵌め込むことによって、電流路が形成される差し込みコネクタにおいて、
前記雌端子及び前記雄端子の少なくとも一方の接続部分の母材に、下地めっき層を介して、厚みが０．２μｍ以上２μｍ以下でＢｉ含有率が０．０１ａｔ％以上３ａｔ％以下のＡｇ−Ｂｉ合金めっき層と、厚みが０．５μｍ以上２μｍ以下の純Ａｇめっき層が順に形成されている。
The plug connector according to the present invention that meets the above-mentioned object is a plug connector in which a current path is formed by fitting a male terminal into a female terminal.
Ag—Bi having a thickness of 0.2 μm or more and 2 μm or less and a Bi content of 0.01 at% or more and 3 at% or less via a base plating layer on a base material of at least one connection portion of the female terminal and the male terminal. an alloy plating layer, pure Ag plating layer thickness of 0.5μm or more 2μm or less are formed in this order.
本発明に係る差し込みコネクタにおいて、前記下地めっき層は厚みが０．５μｍ以上２μｍ以下のＮｉめっき層であることが好ましい。 In the plug connector according to the present invention, the base plating layer is preferably a Ni plating layer having a thickness of 0.5 μm to 2 μm.
本発明に係る差し込みコネクタにおいて、前記下地めっき層と前記Ａｇ−Ｂｉ合金めっき層との間に、Ｃｕめっき層が形成されていることが好ましい。 In the plug connector according to the present invention, it is preferable that a Cu plating layer is formed between the base plating layer and the Ag—Bi alloy plating layer.
本発明に係る差し込みコネクタにおいて、前記Ｃｕめっき層の厚みは０．０５μｍ以上１μｍ以下の範囲にあるのがよい。 In the plug connector according to the present invention, the thickness of the Cu plating layer may be in the range of 0.05 μm to 1 μm.
本発明に係る差し込みコネクタは、接続部分の母材に、下地めっき層を介して、Ａｇ−Ｂｉ合金めっき層と純Ａｇめっき層が順に形成されている。この純Ａｇめっき層の下層となるＡｇ−Ｂｉ合金めっき層は、純Ａｇめっき層よりも硬度が高い。これにより、差し込みコネクタを繰り返し摺動させた際に、純Ａｇめっき層の磨耗の進行を抑制できるので、純Ａｇめっき層の厚みを従来よりも薄くできる。
従って、安定した電気的な接続信頼性と、繰り返し摺動に対する耐磨耗性を備え、経済性にも優れる差し込みコネクタを提供できる。
In the plug connector according to the present invention, an Ag—Bi alloy plating layer and a pure Ag plating layer are sequentially formed on the base material of the connection portion via a base plating layer. The Ag—Bi alloy plating layer, which is the lower layer of the pure Ag plating layer, has higher hardness than the pure Ag plating layer. Thereby, when the plug connector is repeatedly slid, the progress of the wear of the pure Ag plating layer can be suppressed, so that the thickness of the pure Ag plating layer can be made thinner than before.
Therefore, it is possible to provide a plug connector that has stable electrical connection reliability, wear resistance against repeated sliding, and is excellent in economy.
また、下地めっき層とＡｇ−Ｂｉ合金めっき層との間に、Ｃｕめっき層が形成されている場合、下地めっき層とＡｇ−Ｂｉ合金めっき層との密着性を高めることができる。 Between the lower plating layer and the Ag-Bi alloy plating layer, if Cu plating layer is formed, it is possible to enhance the adhesion between the lower plating layer and A g-Bi alloy plating layer.
続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態につき説明し、本発明の理解に供する。
本発明の一実施の形態に係る差し込みコネクタ（以下、単にコネクタともいう）は、雌端子に雄端子を嵌め込むことによって、電流路が形成される差し込みコネクタであり、安定した電気的な接続信頼性と、繰り返し摺動に対する耐磨耗性を備え、経済性にも優れるコネクタである。以下、詳しく説明する。
Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
An insertion connector (hereinafter also simply referred to as a connector) according to an embodiment of the present invention is an insertion connector in which a current path is formed by fitting a male terminal into a female terminal, and stable electrical connection reliability. It is a connector that is excellent in economy and wear resistance against repeated sliding. This will be described in detail below.
差し込みコネクタは、主として自動車に使用されるものであるが、これに限定されるものではない。
なお、差し込みコネクタの雄端子としては、例えば、従来自動車のエンジン周りの部品に使用していた前記したボルトの代わりに使用するもの（ボルトの周囲のねじ山がないもの）や、充電用プラグに使用するもの等がある。また、差し込みコネクタの雌端子としては、例えば、上記した雄端子が嵌め込まれるもの等がある。
The plug-in connector is mainly used for an automobile, but is not limited thereto.
In addition, as a male terminal of a plug connector, for example, a plug that is used in place of the above-described bolt used for parts around an engine of a conventional automobile (one that does not have a screw thread around the bolt) or a charging plug is used. There are things to use. Moreover, as a female terminal of an insertion connector, there exists a thing etc. in which the above-mentioned male terminal is inserted, for example.
上記した雌端子及び雄端子の少なくとも一方（双方でもよい）の接続部分の母材には、下地めっき層を介してＡｇ−Ｂｉ（銀／ビスマス）合金めっき層と純Ａｇめっき層（純度が、例えば、９９．９９質量％以上）が順に形成されている。
接続部分の母材としては、Ｃｕ（銅）合金を使用できるが、使用用途に応じて種々変更でき、例えば、Ｃｕ系（Ｃｕ又はＣｕ合金）、Ｆｅ（鉄）系（Ｆｅ又はＦｅ合金（ステンレス等））、及びＡｌ（アルミニウム）系（Ａｌ又はＡｌ合金）のいずれか１種を使用することもできる。
The base material of the connection part of at least one of the female terminal and the male terminal (or both) may be an Ag-Bi (silver / bismuth) alloy plating layer and a pure Ag plating layer (purity is For example, 99.99 mass% or more) are formed in order.
A Cu (copper) alloy can be used as the base material of the connection portion, but various changes can be made depending on the intended use. For example, Cu-based (Cu or Cu alloy), Fe (iron) -based (Fe or Fe alloy (stainless steel) Etc.)) and Al (aluminum) type (Al or Al alloy) can also be used.
また、下地めっき層としては、母材からの元素の拡散を抑制するため、Ｎｉ（ニッケル）又はＮｉ合金を使用することが好ましい。
ここで、下地めっき層にＮｉを使用する場合、その厚みを０．５μｍ以上２μｍ以下にすることにより、母材からの元素の拡散を抑制する効果が向上する。
In addition, as the base plating layer, it is preferable to use Ni (nickel) or Ni alloy in order to suppress diffusion of elements from the base material.
Here, when Ni is used for the base plating layer, the effect of suppressing the diffusion of elements from the base material is improved by setting the thickness to 0.5 μm or more and 2 μm or less.
Ａｇ−Ｂｉ合金めっき層と純Ａｇめっき層は、以下の理由により、母材の表面に形成した。
まず、図１（Ａ）、（Ｂ）を参照しながら説明する。
図１（Ａ）、（Ｂ）は、それぞれＡｇめっき層、Ａｇ−Ｂｉ合金めっき層が形成された半球状の凸部表面を、試験片に対して往復摺動させた場合の摺動後の試験片の磨耗形態を示す説明図である。なお、図１（Ａ）の試験片は、めっき層としてＡｇめっきを使用し、図１（Ｂ）の試験片は、めっき層としてＡｇ−Ｂｉ合金めっきを使用している。
The Ag—Bi alloy plating layer and the pure Ag plating layer were formed on the surface of the base material for the following reason.
First, a description will be given with reference to FIGS.
1 (A) and 1 (B) show the results after sliding when a hemispherical convex surface on which an Ag plating layer and an Ag-Bi alloy plating layer are formed is slid back and forth with respect to a test piece. It is explanatory drawing which shows the wear form of a test piece. In addition, the test piece of FIG. 1 (A) uses Ag plating as a plating layer, and the test piece of FIG. 1 (B) uses Ag-Bi alloy plating as a plating layer.
図１（Ａ）に示すように、Ａｇめっき層の厚みが十分に厚い場合、Ａｇの自己潤滑と相互転写の特性が得られる。このため、凸部表面を試験片に対して摺動させると、Ａｇめっき層の磨耗速度は速いが、ある程度の深さで磨耗が進行しなくなる。
一方、Ａｇ−Ｂｉ合金はＡｇと比較して硬質であるため、凸部表面を試験片に対して摺動させると、磨耗の進行は遅いものの、図１（Ｂ）に示すように、磨耗の深さが摺動回数に比例し、下地が表面に露出することになる。
As shown in FIG. 1A, when the Ag plating layer is sufficiently thick, Ag self-lubrication and mutual transfer characteristics can be obtained. For this reason, when the convex surface is slid with respect to the test piece, the wear rate of the Ag plating layer is fast, but the wear does not proceed at a certain depth.
On the other hand, since the Ag-Bi alloy is harder than Ag, when the convex surface is slid with respect to the test piece, the wear progresses slowly, but as shown in FIG. The depth is proportional to the number of sliding times, and the base is exposed on the surface.
以上の結果を基に、摺動回数の増加に伴う接触抵抗値の推移について検討した結果を、図２を参照しながら説明する。なお、接触抵抗値の増加は、雌端子と雄端子との間の通電特性の低下を意味する（以下、同様）。
試験は、厚み１μｍのＡｇめっき層（下地めっき層：Ｎｉ）が形成された直径３ｍｍの半球状の凸部（厚み０．２ｍｍ）表面を、試験片に対して往復摺動（ストローク：０．０５ｍｍ、温度：室温）させることで行った。なお、試験片としては、Ａｇめっき層（厚み：２μｍと１０μｍ）がＮｉの下地めっき層を介して母材の表面に形成されたものと、Ａｇ−Ｂｉ合金めっき層（Ｂｉ含有量：０．２ａｔ％（原子％））と純Ａｇめっき層（厚み：２μｍ）が順に、Ｎｉの下地めっき層を介して母材の表面に形成されたものを使用した（合計３種類）。
Based on the above results, the results of examining the transition of the contact resistance value with the increase in the number of sliding times will be described with reference to FIG. Note that an increase in the contact resistance value means a decrease in current-carrying characteristics between the female terminal and the male terminal (the same applies hereinafter).
In the test, the surface of a hemispherical convex part (thickness 0.2 mm) having a diameter of 3 mm on which an Ag plating layer (underlying plating layer: Ni) having a thickness of 1 μm was formed was slid back and forth (stroke: 0. 0 mm). (05 mm, temperature: room temperature). In addition, as a test piece, the Ag plating layer (thickness: 2 μm and 10 μm) is formed on the surface of the base material through the Ni base plating layer, and the Ag—Bi alloy plating layer (Bi content: 0.0. 2 at% (atomic%)) and a pure Ag plating layer (thickness: 2 μm) were sequentially formed on the surface of the base material via a Ni base plating layer (three types in total).
図２に示すように、厚み２μｍのＡｇめっき層が形成された試験片は、Ａｇめっき層の厚みが薄過ぎたため、摺動試験の途中で、下地めっき層であるＮｉが表面に露出し、接触抵抗値の上昇を招いた。
また、厚み１０μｍのＡｇめっき層が形成された試験片は、Ａｇめっき層の厚みが十分であったため、下地めっき層であるＮｉが表面に露出することなく、接触抵抗値を低い値で推移させることができた（図１（Ａ）参照）。しかし、この場合、Ａｇめっき層の厚みが厚くなるため、製造コストの上昇を招く。
一方、Ａｇ−Ｂｉ合金めっき層と純Ａｇめっき層が順に形成された試験片は、純Ａｇめっき層の厚みが薄かったにも関わらず、上記した厚み２μｍのＡｇめっき層が形成された試験片と比較して、接触抵抗値を低い値で推移させることができた。
As shown in FIG. 2, since the thickness of the Ag plating layer was too thin in the test piece on which the 2 μm thick Ag plating layer was formed, Ni as the base plating layer was exposed on the surface during the sliding test, Increased contact resistance.
Moreover, since the thickness of the Ag plating layer was sufficient for the test piece on which the 10 μm-thick Ag plating layer was formed, the contact resistance value was shifted to a low value without exposing Ni as the underlying plating layer to the surface. (See FIG. 1 (A)). However, in this case, since the thickness of the Ag plating layer is increased, the manufacturing cost is increased.
On the other hand, the test piece in which the Ag—Bi alloy plating layer and the pure Ag plating layer were formed in this order, the test piece in which the above-described Ag plating layer having a thickness of 2 μm was formed even though the pure Ag plating layer was thin. Compared with, the contact resistance value could be changed at a low value.
また、耐熱性試験の前後における接触抵抗値の変化を、図３を参照しながら説明する。
試験は、めっき層形成直後の試験片（耐熱性試験前の試験片）と、この試験片を１５０℃で１０００時間加熱した試験片（耐熱性試験後の試験片）を用い、前記した往復摺動により行った。なお、試験片としては、Ａｇ−Ｂｉ合金めっき層（Ｂｉ含有量：０．２ａｔ％）と純Ａｇめっき層が順に、Ｎｉの下地めっき層を介して母材の表面に形成されたもの（Ａｇ−Ｂｉ合金＋Ａｇ）と、純Ａｇめっき層のみがＮｉの下地めっき層を介して母材の表面に形成されたもの（Ａｇ）と、Ａｇ−Ｂｉ合金めっき層（Ｂｉ含有量：０．２ａｔ％のみがＮｉの下地めっき層を介して母材の表面に形成されたもの（Ａｇ−Ｂｉ合金）を使用した（合計３種類）。
Further, changes in the contact resistance value before and after the heat resistance test will be described with reference to FIG.
The test was performed using the test piece immediately after the plating layer was formed (test piece before the heat resistance test) and the test piece obtained by heating the test piece at 150 ° C. for 1000 hours (the test piece after the heat resistance test). It was done by movement. In addition, as a test piece, the Ag-Bi alloy plating layer (Bi content: 0.2 at%) and the pure Ag plating layer were formed in order on the surface of the base material through the Ni base plating layer (Ag -Bi alloy + Ag), a pure Ag plating layer formed on the surface of the base material through a Ni undercoat layer (Ag), and an Ag-Bi alloy plating layer (Bi content: 0.2 at%) Only the one (Ag—Bi alloy) formed on the surface of the base material through the Ni base plating layer was used (three types in total).
図３から明らかなように、耐熱性試験前の試験片はいずれも、接触抵抗値が略同等で、しかも低い値であった。
一方、耐熱性試験後の試験片は、「Ａｇ−Ｂｉ合金」の場合、接触抵抗値の急激な上昇が確認されたが、「Ａｇ−Ｂｉ合金＋Ａｇ」については、耐熱性試験前と略同等の接触抵抗値が得られ、しかも、その接触抵抗値は「Ａｇ」と略同等であった。
更に、上記した「Ａｇ」と「Ａｇ−Ｂｉ合金＋Ａｇ」については、曲げ加工試験（曲げ試験又はＷ曲げ試験）を行ったが、「Ａｇ−Ｂｉ合金＋Ａｇ」のＡｇ−Ｂｉ合金めっき層とＡｇめっき層は、共に母材から剥がれることなく、曲げ加工性は「Ａｇ」のＡｇめっき層と略同等であった。
As can be seen from FIG. 3, all of the test pieces before the heat resistance test had substantially the same contact resistance value and a low value.
On the other hand, when the test piece after the heat resistance test was “Ag—Bi alloy”, a rapid increase in the contact resistance value was confirmed, but “Ag—Bi alloy + Ag” was almost the same as before the heat resistance test. The contact resistance value was obtained, and the contact resistance value was substantially equivalent to “Ag”.
Further, the above-mentioned “Ag” and “Ag—Bi alloy + Ag” were subjected to a bending test (bending test or W bending test), but the Ag—Bi alloy plating layer of “Ag—Bi alloy + Ag” and Ag The plating layers were not peeled off from the base material, and the bending workability was substantially the same as the Ag plating layer of “Ag”.
以上のことから、Ａｇの自己潤滑及び相互転写と、Ａｇ―Ｂｉ合金の硬質性を備える構成として、前記した構成、即ち、母材の表面に、下地めっき層を介してＡｇ−Ｂｉ合金めっき層と純Ａｇめっき層を順に形成した構成とした。
上記したＡｇ―Ｂｉ合金は、Ａｇ中にＢｉが固溶しているため、Ａｇ−Ｂｉ合金めっき層の硬度が、純Ａｇめっきの場合と比較して上昇する。例えば、Ａｇ−Ｂｉ合金めっき層のマイクロビッカース硬度（ＭＨｖ）は、上記した耐熱性試験後も１１０以上である（Ａｇめっき層の硬度は８０程度）。このＡｇ−Ｂｉ合金めっき層の耐熱性試験前のマイクロビッカース硬度は、１２０以上１８０以下程度である。
From the above, as a configuration having Ag self-lubrication and mutual transfer and Ag-Bi alloy hardness, the above-described configuration, that is, the Ag-Bi alloy plating layer on the surface of the base material via the base plating layer. And a pure Ag plating layer were sequentially formed.
In the above-described Ag—Bi alloy, since Bi is dissolved in Ag, the hardness of the Ag—Bi alloy plating layer is increased as compared with the case of pure Ag plating. For example, the micro Vickers hardness (MHv) of the Ag—Bi alloy plating layer is 110 or more even after the above heat resistance test (the hardness of the Ag plating layer is about 80). The micro Vickers hardness before the heat resistance test of this Ag—Bi alloy plating layer is about 120 or more and 180 or less.
なお、この場合、Ａｇ−Ｂｉ合金めっき層中のＢｉの含有率は、例えば、０．０１ａｔ％以上３ａｔ％以下（下限を０．０５ａｔ％、更には０．１ａｔ％とすることが好ましく、上限を１ａｔ％、更には０．５ａｔ％とすることが好ましい）でよい。
ここで、Ａｇ−Ｂｉ合金めっき層中のＢｉ含有率が０．０１ａｔ％未満の場合、Ｂｉ量が少な過ぎて皮膜硬度が不足し、耐摺動磨耗性に十分に寄与せず、一方、Ｂｉ含有率が３ａｔ％超の場合、Ｂｉ量が多過ぎて皮膜が硬くなり、曲げ加工性が劣る。
また、Ａｇ−Ｂｉ合金めっきは、Ｂｉを除けば全てＡｇであるが、不可避的不純物が含まれている場合もある。
In this case, the Bi content in the Ag—Bi alloy plating layer is, for example, 0.01 at% or more and 3 at% or less (the lower limit is preferably 0.05 at%, more preferably 0.1 at%, 1 at%, more preferably 0.5 at%).
Here, when the Bi content in the Ag—Bi alloy plating layer is less than 0.01 at%, the amount of Bi is too small and the film hardness is insufficient and does not sufficiently contribute to the sliding wear resistance. When the content is more than 3 at%, the amount of Bi is too large, the film becomes hard, and the bending workability is inferior.
Moreover, although Ag-Bi alloy plating is all Ag except Bi, inevitable impurities may be contained.
このＡｇ―Ｂｉ合金めっき層の厚みは、特に限定されるものではないが、０．２μｍ以上２μｍ以下（好ましくは、下限を０．５μｍ、上限を１．５μｍ）の範囲にあることが好ましい。
Ａｇ―Ｂｉ合金めっき層の厚みを、上記した範囲に規定することで、Ａｇ―Ｂｉ合金めっき層の特性、即ち純Ａｇめっき層の下層に硬質層を存在させるという特性を、十分に発揮できる。
The thickness of the Ag—Bi alloy plating layer is not particularly limited, but is preferably in the range of 0.2 μm to 2 μm (preferably, lower limit is 0.5 μm, upper limit is 1.5 μm).
By defining the thickness of the Ag—Bi alloy plating layer in the above-described range, the characteristics of the Ag—Bi alloy plating layer, that is, the characteristic that the hard layer is present under the pure Ag plating layer can be sufficiently exhibited.
また、純Ａｇめっき層の厚みも、特に限定されるものではないが、０．５μｍ以上５μｍ以下の範囲にあることが好ましい。
ここで、純Ａｇめっき層の厚みが０．５μｍ未満の場合、厚みが薄過ぎて、コネクタの使用時に純Ａｇめっき層が磨耗し、下層のＡｇ―Ｂｉ合金めっき層が露出して、接触抵抗値の上昇を招く（図１（Ｂ）参照）。一方、純Ａｇめっき層の厚みが厚ければ、Ａｇの自己潤滑と相互転写の効果が得られるため、上限値については特に限定されないが、製造コストの低減を図るためには、５μｍ（好ましくは３μｍ、更に好ましくは２μｍ）程度がよい。
The thickness of the pure Ag plating layer is not particularly limited, but is preferably in the range of 0.5 μm or more and 5 μm or less.
Here, when the thickness of the pure Ag plating layer is less than 0.5 μm, the thickness is too thin, the pure Ag plating layer is worn when the connector is used, and the lower Ag—Bi alloy plating layer is exposed, and the contact resistance The value increases (see FIG. 1B). On the other hand, if the thickness of the pure Ag plating layer is large, the effect of self-lubricating Ag and mutual transfer can be obtained, so the upper limit value is not particularly limited. However, in order to reduce the manufacturing cost, 5 μm (preferably About 3 μm, more preferably about 2 μm).
上記したＡｇ―Ｂｉ合金めっき層は、下地めっき層の表面に直接形成できるが、下地めっき層とＡｇ―Ｂｉ合金めっき層との密着性を高めるため、特に、高温（１５０℃超）の使用環境下では、下地めっき層とＡｇ−Ｂｉ合金めっき層との間に、Ｃｕめっき層を形成することが好ましい。
このＣｕめっき層の厚みは、特に限定されるものではないが、０．０５μｍ以上１μｍ以下の範囲にあることが好ましい。
The above-mentioned Ag-Bi alloy plating layer can be directly formed on the surface of the undercoat plating layer. However, in order to improve the adhesion between the undercoat plating layer and the Ag-Bi alloy plating layer, it is used particularly at high temperatures (over 150 ° C). Below, it is preferable to form a Cu plating layer between the base plating layer and the Ag—Bi alloy plating layer.
The thickness of the Cu plating layer is not particularly limited, but is preferably in the range of 0.05 μm to 1 μm.
Ｃｕめっき層の厚みが０．０５μｍ未満の場合、Ｃｕめっき層の厚みが薄過ぎて、下地めっき層が拡散し、Ａｇ−Ｂｉ合金めっき層が剥がれ易くなる。このため、Ｃｕめっき層の厚みを０．０５μｍ以上としたが、０．０８μｍ以上とすることが好ましい。
一方、Ｃｕめっき層の厚みが厚くなっても、Ａｇ−Ｂｉ合金めっき層により、純Ａｇめっき層へのＣｕの拡散を抑制、更には防止できるため、上限値については特に限定されるものではないが、経済性を考慮すれば、１μｍ（更には、０．５μｍ）である。
When the thickness of the Cu plating layer is less than 0.05 μm, the thickness of the Cu plating layer is too thin, the base plating layer diffuses, and the Ag—Bi alloy plating layer is easily peeled off. For this reason, although the thickness of the Cu plating layer is 0.05 μm or more, it is preferably 0.08 μm or more.
On the other hand, even if the thickness of the Cu plating layer is increased, the Ag-Bi alloy plating layer can suppress and further prevent the diffusion of Cu into the pure Ag plating layer, and thus the upper limit value is not particularly limited. However, considering the economical efficiency, it is 1 μm (further 0.5 μm).
ここで、耐熱性試験の前後におけるＡｇめっき層へのＣｕの拡散状況について、図４を参照しながら説明する。
試験は、めっき層形成直後の試験片（耐熱性試験前の試験片）と、この試験片を１５０℃で１０００時間加熱した試験片（耐熱性試験後の試験片）を用い、Ａｇめっき層中のＣｕ量の割合（Ｃｕ／Ａｇ）を算出することで行った（ＡＥＳ分析結果：分析面の最表面層を高精度に分析可能）。なお、試験片としては、Ａｇ−Ｂｉ合金めっき層（Ｂｉ含有量：０．２ａｔ％）と純Ａｇめっき層が順に、Ｃｕめっき層の表面に形成されたもの（Ａｇ−Ｂｉ合金＋Ａｇ）と、純Ａｇめっき層のみがＣｕめっき層の表面に形成されたもの（Ａｇ）を使用した（合計２種類）。
Here, the diffusion state of Cu into the Ag plating layer before and after the heat resistance test will be described with reference to FIG.
The test uses a test piece immediately after the plating layer is formed (test piece before the heat resistance test) and a test piece (test piece after the heat resistance test) obtained by heating the test piece at 150 ° C. for 1000 hours. (Cu / Ag) was calculated (AES analysis result: the outermost surface layer of the analysis surface can be analyzed with high accuracy). In addition, as a test piece, the Ag-Bi alloy plating layer (Bi content: 0.2 at%) and the pure Ag plating layer are sequentially formed on the surface of the Cu plating layer (Ag-Bi alloy + Ag), Only pure Ag plating layer (Ag) formed on the surface of the Cu plating layer was used (two types in total).
図４から明らかなように、耐熱性試験前の試験片は、「Ａｇ」の場合、Ａｇめっき層へのＣｕの拡散が僅かに発生したが、「Ａｇ−Ｂｉ合金＋Ａｇ」の場合、Ａｇめっき層へのＣｕの拡散は全くなかった。
また、耐熱性試験後の試験片は、「Ａｇ」の場合、Ａｇめっき層へのＣｕの拡散が顕著に発生したが、「Ａｇ−Ｂｉ合金＋Ａｇ」の場合、Ａｇめっき層へのＣｕの拡散は全くなかった。
As is clear from FIG. 4, when the specimen before the heat resistance test was “Ag”, a slight diffusion of Cu into the Ag plating layer occurred, but in the case of “Ag—Bi alloy + Ag”, the Ag plating was performed. There was no diffusion of Cu into the layer.
In addition, when the test piece after the heat resistance test was “Ag”, the diffusion of Cu into the Ag plating layer occurred remarkably, but when “Ag—Bi alloy + Ag”, the diffusion of Cu into the Ag plating layer There was no.
なお、差し込みコネクタには、上記したＡｇ−Ｂｉ合金めっき層の代わりに、光沢Ａｇめっき層を形成したものを使用することもできる。
ここで、摺動回数の増加に伴う接触抵抗値の推移について検討した他の結果を、図５を参照しながら説明する。
試験は、エンボス材に形成された直径３ｍｍの半球状の凸部表面を、試験片に対して往復摺動（加重：４Ｎ、ストローク：１０ｍｍ、温度：室温）させることで行った。なお、エンボス材と試験片の母材は共に、Ｃｕで構成されている。また、母材の表面にはそれぞれ、半光沢Ｎｉの下地めっき層（厚み：１．０μｍ）を介して、同一構成（組成と厚みが同一）のめっき層が形成されている。
In addition, the plug connector may be formed with a bright Ag plating layer instead of the above-described Ag—Bi alloy plating layer.
Here, another result of examining the transition of the contact resistance value with the increase in the number of sliding times will be described with reference to FIG.
The test was performed by reciprocally sliding the surface of a hemispherical convex portion having a diameter of 3 mm formed on the embossed material with respect to the test piece (load: 4 N, stroke: 10 mm, temperature: room temperature). Both the embossed material and the base material of the test piece are made of Cu. In addition, plating layers having the same configuration (the same composition and thickness) are formed on the surface of the base material via a semi-gloss Ni underplating layer (thickness: 1.0 μm), respectively.
なお、めっき層が形成された母材として、以下の３種類を使用した。
・めっき層として純Ａｇめっき層（厚み：１．０μｍ）が、下地めっき層を介して、母材の表面に形成されたもの
・めっき層としてＡｇ−Ｂｉ合金めっき層（Ｂｉ含有量：０．２ａｔ％、厚み：０．３μｍ）と純Ａｇめっき層（厚み：１．０μｍ）が順に、下地めっき層を介して、母材の表面に形成されたもの
・めっき層として光沢Ａｇめっき層（厚み：０．３μｍ）と純Ａｇめっき層（厚み：１．０μｍ）が順に、下地めっき層を介して、母材の表面に形成されたもの
In addition, the following three types were used as the base material on which the plating layer was formed.
A pure Ag plating layer (thickness: 1.0 μm) as a plating layer is formed on the surface of the base material via a base plating layer. An Ag—Bi alloy plating layer (Bi content: 0.00) as a plating layer. 2 at%, thickness: 0.3 μm) and a pure Ag plating layer (thickness: 1.0 μm) are sequentially formed on the surface of the base material via the base plating layer. Glossy Ag plating layer (thickness) : 0.3 μm) and a pure Ag plating layer (thickness: 1.0 μm) sequentially formed on the surface of the base material through the base plating layer
図５に示すように、下地めっき層の表面に純Ａｇめっき層のみが形成された試験片は、純Ａｇめっき層の厚みが薄過ぎたため、純Ａｇめっき層が摺動回数４回程度で剥がれてしまい（母材表面が露出していまい）、接触抵抗値の上昇を招いた。
一方、下地めっき層の表面に、Ａｇ−Ｂｉ合金めっき層と純Ａｇめっき層が順に形成された試験片は、前記した図２の結果と同様、純Ａｇめっき層の厚みが薄かったにも関わらず、接触抵抗値を低い値で推移させることができた。
また、下地めっき層の表面に、光沢Ａｇめっき層と純Ａｇめっき層が順に形成された試験片は、摺動回数２０回程度まで、上記したＡｇ−Ｂｉ合金めっき層が形成された場合と同様、接触抵抗値が低い値で推移していた。
As shown in FIG. 5, in the test piece in which only the pure Ag plating layer was formed on the surface of the base plating layer, since the thickness of the pure Ag plating layer was too thin, the pure Ag plating layer was peeled off after sliding about 4 times. (The surface of the base material was not exposed), leading to an increase in contact resistance.
On the other hand, the test piece in which the Ag—Bi alloy plating layer and the pure Ag plating layer were formed in this order on the surface of the base plating layer is similar to the result of FIG. 2 described above, although the thickness of the pure Ag plating layer was thin. Therefore, the contact resistance value could be changed at a low value.
Moreover, the test piece in which the bright Ag plating layer and the pure Ag plating layer are formed in order on the surface of the base plating layer is the same as the case where the above-described Ag-Bi alloy plating layer is formed up to about 20 times of sliding. The contact resistance value remained low.
従って、差し込みコネクタには、Ａｇ−Ｂｉ合金めっき層の代わりに、光沢Ａｇめっき層が形成されたものを使用することもできる。
ここで、光沢Ａｇめっきとは、光沢剤の添加による電気化学反応の抑制により、Ａｇの結晶組織が微細化され、表面平滑度が向上して、光沢が得られるものである。また、この微細な結晶の粒界には、添加された物質や水素が不純物として析出している結果、硬質のめっき膜となる（マイクロビッカース硬度：１２０以上１８０以下程度）。
なお、Ａｇ中に含まれる上記した光沢剤としては、Ｓｅ（セレン）及びＳｂ（アンチモン）のいずれか一方又は双方がある。
Accordingly, a plug connector having a bright Ag plating layer can be used instead of the Ag-Bi alloy plating layer.
Here, the glossy Ag plating means that the Ag crystal structure is refined by suppressing the electrochemical reaction due to the addition of the brightener, the surface smoothness is improved, and the gloss is obtained. In addition, as a result of the addition of added substances and hydrogen as impurities in the grain boundaries of the fine crystals, a hard plating film is formed (micro Vickers hardness: about 120 or more and about 180 or less).
In addition, as the above-mentioned brightener contained in Ag, there exists one or both of Se (selenium) and Sb (antimony).
なお、光沢剤として、ＳｅとＳｂの双方を含む場合、光沢Ａｇめっき層中のＳｅとＳｂの各含有率は、例えば、以下の割合であることが好ましい。
・Ｓｅ：０．０５ａｔ％以上０．０９ａｔ％以下
・Ｓｂ：０．１５ａｔ％以上０．３０ａｔ％以下
これにより、皮膜硬度が高められ、耐摺動磨耗性を備えることができると共に、必要な曲げ加工性も備えることができる。
なお、光沢Ａｇめっきは、ＳｅとＳｂの双方を含む場合、ＳｅとＳｂの双方（Ｓｅ及びＳｂのいずれか一方のみを含む場合、その一方）を除けば全てＡｇであるが、不可避的不純物が含まれている場合もある。
In addition, when both Se and Sb are included as a brightener, it is preferable that each content rate of Se and Sb in a gloss Ag plating layer is the following ratios, for example.
-Se: 0.05 at% or more and 0.09 at% or less-Sb: 0.15 at% or more and 0.30 at% or less This makes it possible to increase the film hardness and to provide sliding wear resistance, as well as necessary bending. Workability can also be provided.
In addition, gloss Ag plating is all Ag except when both Se and Sb are included, except for both Se and Sb (when only one of Se and Sb is included), but unavoidable impurities are present. May be included.
また、光沢Ａｇめっきは、上記硬度が得れる構成であれば、特に限定されるものではなく、例えば、以下に示す光沢剤が含まれるものでもよい。
（１）二酸化炭素とケトン類の縮合生成物
（２）キサントゲン塩
（３）ＡＳＫ化合物（アクロレイン−二硫化硫黄縮合生成物）
（４）チオカクバジッド縮合生成物
（５）チオ硫酸塩
（６）セレニウムとテルリウム化合物
（７）アンチモン−ビスマス化合物
Further, the gloss Ag plating is not particularly limited as long as the hardness can be obtained. For example, the gloss Ag plating described below may be included.
(1) Condensation product of carbon dioxide and ketones (2) Xanthogen salt (3) ASK compound (Acrolein-sulfur disulfide condensation product)
(4) Thiocabazide condensation product (5) Thiosulfate (6) Selenium and tellurium compound (7) Antimony-bismuth compound
この光沢Ａｇめっき層の厚みは、特に限定されるものではないが、０．２μｍ以上２μｍ以下（好ましくは、下限を０．５μｍ、上限を１．５μｍ、更には１．０μｍ）の範囲にあることが好ましい。
光沢Ａｇめっき層の厚みを、上記した範囲に規定することで、光沢Ａｇめっき層の特性、即ち純Ａｇめっき層の下層に硬質層を存在させるという特性を、十分に発揮できる。
また、上記した光沢Ａｇめっき層は、下地めっき層の表面に直接形成できるが、下地めっき層と光沢Ａｇめっき層との密着性を高めるため、下地めっき層と光沢Ａｇめっき層との間に、前記したＣｕめっき層（例えば、厚みが０．０５μｍ以上１μｍ以下）を形成することが好ましい。
The thickness of the bright Ag plating layer is not particularly limited, but is in the range of 0.2 μm or more and 2 μm or less (preferably, the lower limit is 0.5 μm, the upper limit is 1.5 μm, and further 1.0 μm). It is preferable.
By defining the thickness of the bright Ag plating layer in the above-described range, the characteristics of the bright Ag plating layer, that is, the characteristic that the hard layer is present under the pure Ag plating layer can be sufficiently exhibited.
Moreover, although the above-mentioned glossy Ag plating layer can be directly formed on the surface of the base plating layer, in order to improve the adhesion between the base plating layer and the bright Ag plating layer, between the base plating layer and the bright Ag plating layer, It is preferable to form the Cu plating layer described above (for example, the thickness is 0.05 μm or more and 1 μm or less).
以上に示した本発明の差し込みコネクタは、安定した電気的な接続信頼性と、繰り返し摺動に対する耐磨耗性を備え、経済性にも優れる。 The plug connector according to the present invention described above has stable electrical connection reliability, wear resistance against repeated sliding, and is excellent in economy.
続いて、本発明の一実施の形態に係る差し込みコネクタの製造方法について説明する。
まず、母材を準備する。この母材は、製品と略同一形状に加工されたものである。
そして、この母材をめっき浴中に浸漬して、めっき処理する。
このめっき処理は、Ｎｉめっき、Ａｇ−Ｂｉ合金めっき、及び純Ａｇめっきを、順次行う。ここで、Ａｇ−Ｂｉ合金めっきは、Ｂｉ濃度を調整しためっき浴を使用し、陽極にＰｔ（白金電極）を用いて行う。
なお、Ｃｕめっきを行う場合は、Ｎｉめっきを行った後、Ｃｕめっきを行う。
これにより、母材に、下地めっき層を介して（場合によってはＣｕめっき層と）Ａｇ−Ｂｉ合金めっき層と純Ａｇめっき層を順に形成できる。
Then, the manufacturing method of the insertion connector which concerns on one embodiment of this invention is demonstrated.
First, prepare the base material. This base material is processed into substantially the same shape as the product.
And this base material is immersed in a plating bath, and is plated.
In this plating process, Ni plating, Ag—Bi alloy plating, and pure Ag plating are sequentially performed. Here, the Ag—Bi alloy plating is performed using a plating bath in which the Bi concentration is adjusted, and Pt (platinum electrode) as the anode.
In addition, when performing Cu plating, after performing Ni plating, Cu plating is performed.
Thereby, an Ag-Bi alloy plating layer and a pure Ag plating layer can be sequentially formed on the base material via a base plating layer (in some cases, a Cu plating layer).
また、Ａｇ−Ｂｉ合金めっき層の代わりに、光沢Ａｇめっき層を形成する場合も、上記した方法と同様に、母材をめっき浴中に浸漬して、Ｎｉめっき、光沢Ａｇめっき、及び純Ａｇめっきの各めっき処理を、順次行う。
なお、光沢Ａｇめっき層として、Ａｇ中にＳｅとＳｂの双方が含まれる場合のめっき液には、例えば、めっき液１リットル中に、Ａｇ：６０ｇ、Ｓｅ：２０ｍｇ以上４０ｍｇ以下、Ｓｂ：１００ｍｇ以上２００ｍｇ以下のものを使用できる。
これにより、母材に、下地めっき層を介して（場合によってはＣｕめっき層と）光沢Ａｇめっき層と純Ａｇめっき層を順に形成できる。
Further, when forming a bright Ag plating layer instead of the Ag-Bi alloy plating layer, similarly to the above method, the base material is immersed in a plating bath, Ni plating, bright Ag plating, and pure Ag. Each plating process of plating is performed sequentially.
In addition, as a luster Ag plating layer, when both Se and Sb are contained in Ag, for example, in 1 liter of plating solution, Ag: 60 g, Se: 20 mg or more, 40 mg or less, Sb: 100 mg or more 200 mg or less can be used.
Accordingly, a bright Ag plating layer and a pure Ag plating layer can be sequentially formed on the base material via a base plating layer (in some cases, a Cu plating layer).
以上、本発明を、実施の形態を参照して説明してきたが、本発明は何ら上記した実施の形態に記載の構成に限定されるものではなく、特許請求の範囲に記載されている事項の範囲内で考えられるその他の実施の形態や変形例も含むものである。例えば、前記したそれぞれの実施の形態や変形例の一部又は全部を組合せて本発明の差し込みコネクタを構成する場合も本発明の権利範囲に含まれる。 As described above, the present invention has been described with reference to the embodiment. However, the present invention is not limited to the configuration described in the above embodiment, and the matters described in the scope of claims. Other embodiments and modifications conceivable within the scope are also included. For example, a case where the plug connector of the present invention is configured by combining some or all of the above-described embodiments and modifications is also included in the scope of the right of the present invention.
Claims (4)
前記雌端子及び前記雄端子の少なくとも一方の接続部分の母材に、下地めっき層を介して、厚みが０．２μｍ以上２μｍ以下でＢｉ含有率が０．０１ａｔ％以上３ａｔ％以下のＡｇ−Ｂｉ合金めっき層と、厚みが０．５μｍ以上２μｍ以下の純Ａｇめっき層が順に形成されたことを特徴とする差し込みコネクタ。 In a plug connector in which a current path is formed by fitting a male terminal into a female terminal,
Ag—Bi having a thickness of 0.2 μm or more and 2 μm or less and a Bi content of 0.01 at% or more and 3 at% or less via a base plating layer on a base material of at least one connection portion of the female terminal and the male terminal. A plug connector comprising an alloy plating layer and a pure Ag plating layer having a thickness of 0.5 μm or more and 2 μm or less formed in this order.
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| JP7054432B2 (en) | 2017-07-12 | 2022-04-14 | 株式会社オートネットワーク技術研究所 | Male terminal fittings and female terminal fittings |
| JP7121881B2 (en) * | 2017-08-08 | 2022-08-19 | 三菱マテリアル株式会社 | Terminal material with silver film and terminal with silver film |
| JP2020047500A (en) * | 2018-09-20 | 2020-03-26 | 矢崎総業株式会社 | Terminal mating structure |
| JP2022092093A (en) * | 2020-12-10 | 2022-06-22 | Ｄｏｗａメタルテック株式会社 | Ag COATING MATERIAL, PRODUCTION METHOD OF Ag COATING MATERIAL, AND TERMINAL COMPONENT |
| JP2023079476A (en) * | 2021-11-29 | 2023-06-08 | 矢崎総業株式会社 | Plated material for terminal, terminal using the same, and electric wire with terminal |
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| JP3175381B2 (en) * | 1993-01-20 | 2001-06-11 | 古河電気工業株式会社 | Electrical contact material and its manufacturing method |
| JP2008169408A (en) * | 2007-01-09 | 2008-07-24 | Auto Network Gijutsu Kenkyusho:Kk | Silver-plated terminal for connector |
| JP2009079250A (en) * | 2007-09-26 | 2009-04-16 | Dowa Metaltech Kk | Copper or copper alloy member having silver alloy layer formed as outermost surface layer, and manufacturing method therefor |
| JP5481282B2 (en) * | 2010-06-07 | 2014-04-23 | 神鋼リードミック株式会社 | Electronic component materials |
| JP5387742B2 (en) * | 2012-04-06 | 2014-01-15 | 株式会社オートネットワーク技術研究所 | Plating member, plating terminal for connector, method for manufacturing plating member, and method for manufacturing plating terminal for connector |
| WO2014199837A1 (en) * | 2013-06-11 | 2014-12-18 | 株式会社Ｋａｎｚａｃｃ | Contact terminal structure |
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