JP6468966B2 - 二次電池搭載チップの製造方法 - Google Patents
二次電池搭載チップの製造方法 Download PDFInfo
- Publication number
- JP6468966B2 JP6468966B2 JP2015152490A JP2015152490A JP6468966B2 JP 6468966 B2 JP6468966 B2 JP 6468966B2 JP 2015152490 A JP2015152490 A JP 2015152490A JP 2015152490 A JP2015152490 A JP 2015152490A JP 6468966 B2 JP6468966 B2 JP 6468966B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- electrode
- chip
- secondary battery
- semiconductor secondary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 286
- 239000010410 layer Substances 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 112
- 230000008569 process Effects 0.000 claims description 86
- 229910044991 metal oxide Inorganic materials 0.000 claims description 56
- 150000004706 metal oxides Chemical class 0.000 claims description 56
- 238000002161 passivation Methods 0.000 claims description 44
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 21
- 239000002346 layers by function Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 229920002545 silicone oil Polymers 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 4
- 239000000194 fatty acid Substances 0.000 claims description 4
- 229930195729 fatty acid Natural products 0.000 claims description 4
- 150000004665 fatty acids Chemical class 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 66
- 239000010409 thin film Substances 0.000 description 30
- 239000007787 solid Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000002253 acid Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007773 negative electrode material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007784 solid electrolyte Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000007774 positive electrode material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N hydrogen bromide Substances Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/058—Construction or manufacture
- H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/04—Construction or manufacture in general
- H01M10/0431—Cells with wound or folded electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
- H01M10/0562—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Battery Mounting, Suspending (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
(実施例)
各層界面でのエッチングガスの切り替わり時に発生するエッチング不良を回避するため、洗浄液での残渣除去、洗浄処理を行った。最後のTiO2膜(n型金属酸化物半導体層)のエッチング後にも、残渣除去のため、洗浄液で処理をした。その後、アッシングと溶剤系で、不要なレジストを除去した。
12 第一電極
14 充電機能層
16 第二電極
18 p型金属酸化物半導体層
20 ウェハ
22 チップ
24 チップ基板
26,40 電極パッド
28 電子回路
32 ゲート電極
34 第1配線層
36 第2配線層
38 第3配線層
39 パッシベーション膜
42 ビアホール
44 スクライブ領域
46 二次電池搭載領域
48 二次電池形成領域
50,50−1〜8 酸化物半導体二次電池
52 第一電極
54 n型金属酸化物半導体層
56 充電層
58 p型金属酸化物半導体層
60 第二電極
70,80 パッシベーション膜
72,72−1 第一電極接続用開口部
74 第一電極パッド
76 第一電極接続線
78 第二電極パッド
82−1,82−2,82−3 第二電極接続用開口部
84 第二電極接続線
86 直列接続線
90 酸化物半導体二次電池搭載チップ
92 外部電源
94−1,94−2 電源インピーダンス
96 回路素子
98 出力ドライバ
99 ディスチャージ電流
100−1,100−2 デカップリングコンデンサ
102 出力信号線
104−1電源ノイズ
104−2 グランドノイズ
106 従来のスルーレイト
108 二次電池搭載回路チップのスルーレイト
110−1、110−2 モノリシック固体薄膜二次電池群
112−1、112−2 内部配線
113 論理回路部
114 メモリ回路部
116 IC/LSIメモリー回路部
120 リードフレーム
122 固体電池
124 半導体チップ
126 エポキシ樹脂
128 金ワイヤー
Claims (11)
- 第一電極と充電機能層と第二電極を積層して構成される酸化物半導体二次電池を、回路上に積層したチップの製造方法であって、
ウェハ上に形成された複数のチップの各チップに対応した領域に対して個別に酸化物半導体二次電池を形成することなく、前記複数のチップに対応した領域に対して一体的に酸化物半導体二次電池を積層して形成する積層プロセスと、
一体的に形成された前記酸化物半導体二次電池に対して、前記各チップに対応した領域を残して、前記各チップに対応してない他の領域を除去するパターンエッチングを行い、前記各チップに対応した個別酸化物半導体二次電池に分割する分割プロセスと、
を備え、
前記積層プロセスは、
前記第一電極を前記各チップに形成された第一電極パッドと接続する第一電極接続線形成プロセスと、
前記第二電極を前記チップに形成された前記第一電極パッドとは異なる第二電極パッドと接続する第二電極接続線形成プロセスと、
前記各チップの上に形成された絶縁層を介して、前記各チップの上に前記第一電極を形成する前に、前記絶縁層を平坦化する第一平坦化プロセスと、
絶縁層を介して、前記各チップの上に前記第一電極を形成する第一電極形成プロセスと、 前記絶縁層のビアホールを介して、前記第一電極を前記各チップの第一電極パッドに接続する第一電極接続線を形成する第一電極接続線形成プロセスと、
前記第一電極接続線形成プロセスと前記第一電極形成プロセスとを、同時に行った後に、前記第一電極パッドを覆い、且つ、前記絶縁層と前記第一電極との段差を平坦化するように前記絶縁層の膜厚を厚くする第二平坦化プロセスと、
を備えたこと、
を特徴とする酸化物半導体二次電池を搭載したチップの製造方法。 - 前記分割プロセスの後に、前記第二電極を、前記チップに形成された前記第一電極パッドとは異なる第二電極パッドに接続する第二電極接続線形成プロセスを備えていること、
を特徴とする請求項1に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 前記各チップの上に絶縁層を形成する絶縁層形成プロセスと、
前記絶縁層を平坦化するプロセスと、
前記絶縁層に、前記各チップに連通する開口部を形成する開口部形成プロセスと、
を行い、
前記絶縁層上、及び前記開口部に第一電極パターンを形成することにより、前記第一電極形成プロセスと、前記第一電極接続線形成プロセスとを、同時に行うこと、
を特徴とする請求項1に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 前記充電機能層は、
前記第一電極の上にn型金属酸化物半導体層を形成するn型金属酸化物半導体形成プロセスと、
前記n型金属酸化物半導体層の上に、絶縁体にn型金属酸化物半導体充填された充電層を形成する充電層形成プロセスと、
前記充電層の上に、p型金属酸化物半導体層を形成するp型金属酸化物半導体層形成プロセスと、
で形成されることを特徴とする請求項1に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 前記第二電極と前記チップとの接続は、
前記第二電極を形成した後に、前記第二電極を含む前記個別酸化物半導体二次電池を覆う領域に、絶縁性のパッシベーション膜を形成するパッシベーション膜形成プロセスと、
前記第二電極に対応する領域と、前記第二電極が接続される前記各チップに対応する領域の前記パッシベーション膜を除去する除去プロセスと、
前記除去プロセスによって前記パッシベーションが除去された領域に、前記第二電極と前記各チップとを接続する第二電極接続線パターンを形成する第二電極接続線形成プロセスと、
により行われること、
を特徴とする請求項1に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 前記充電層は、脂肪酸チタン及びシリコーンオイルを含む薬液を塗布、焼成することにより形成されること、
を特徴とする請求項4に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 焼成により形成された前記充電層に、紫外線を照射すること、
を特徴とする請求項6に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 前記分割プロセスにおいて、
一体的に形成された前記酸化物半導体二次電池を複数個に分割して、各チップに対して複数個の二次電池を形成すること、
を特徴とする請求項1に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 各チップに対して形成された複数の前記酸化物半導体二次電池を、直列に接続する直列接続線形成プロセスを含んだこと、
を特徴とする請求項8に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 各チップに対して形成された複数の前記酸化物半導体二次電池の一部の二次電池を、前記各チップに接続せず、
前記一部の酸化物半導体二次電池を、他のチップに接続する酸化物半導体二次電池に直列に接続する直列接続線形成プロセスを含んでいること、
を特徴とする請求項1に記載の酸化物半導体二次電池を搭載したチップの製造方法。 - 前記直列接続線形成プロセスは、
前記第二電極と前記ウェハに形成された第二電極パッドとを接続する、第二電極接続線形成プロセスと同時に行うこと、
を特徴とする請求項10に記載の酸化物半導体二次電池を搭載したチップの製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015152490A JP6468966B2 (ja) | 2015-07-31 | 2015-07-31 | 二次電池搭載チップの製造方法 |
KR1020187002757A KR102123956B1 (ko) | 2015-07-31 | 2016-06-20 | 이차전지 탑재 칩의 제조 방법 |
PCT/JP2016/068219 WO2017022347A1 (ja) | 2015-07-31 | 2016-06-20 | 二次電池搭載チップの製造方法 |
EP16832626.2A EP3331003A4 (en) | 2015-07-31 | 2016-06-20 | METHOD FOR PRODUCING A CHIP MOUNTED ON A SECONDARY BATTERY |
CN201680045200.6A CN107851610A (zh) | 2015-07-31 | 2016-06-20 | 搭载二次电池的芯片的制造方法 |
CA2992968A CA2992968C (en) | 2015-07-31 | 2016-06-20 | Secondary battery mounted chip manufacturing method |
US15/749,306 US10686210B2 (en) | 2015-07-31 | 2016-06-20 | Secondary battery mounted chip manufacturing method |
TW105120308A TWI642142B (zh) | 2015-07-31 | 2016-06-28 | 安裝次級電池之晶片的製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015152490A JP6468966B2 (ja) | 2015-07-31 | 2015-07-31 | 二次電池搭載チップの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017034082A JP2017034082A (ja) | 2017-02-09 |
JP6468966B2 true JP6468966B2 (ja) | 2019-02-13 |
Family
ID=57942803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015152490A Active JP6468966B2 (ja) | 2015-07-31 | 2015-07-31 | 二次電池搭載チップの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10686210B2 (ja) |
EP (1) | EP3331003A4 (ja) |
JP (1) | JP6468966B2 (ja) |
KR (1) | KR102123956B1 (ja) |
CN (1) | CN107851610A (ja) |
CA (1) | CA2992968C (ja) |
TW (1) | TWI642142B (ja) |
WO (1) | WO2017022347A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6966232B2 (ja) * | 2017-06-20 | 2021-11-10 | 株式会社日本マイクロニクス | シート状二次電池、電池構造体、及びシート二次電池の製造方法 |
JP2019008869A (ja) * | 2017-06-20 | 2019-01-17 | 株式会社日本マイクロニクス | 二次電池、及び二次電池の製造方法 |
JP2019016660A (ja) * | 2017-07-05 | 2019-01-31 | 株式会社日本マイクロニクス | 二次電池、及び二次電池の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57109183A (en) | 1980-12-26 | 1982-07-07 | Hitachi Ltd | Non-volatile memory |
KR100305903B1 (ko) * | 1998-08-21 | 2001-12-17 | 박호군 | 수직으로통합연결된박막형전지를구비하는전기및전자소자와그제작방법 |
JP4947849B2 (ja) * | 2001-05-30 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP3989389B2 (ja) | 2003-03-14 | 2007-10-10 | 独立行政法人科学技術振興機構 | 固体薄膜二次電池を内蔵する半導体装置 |
JP4784128B2 (ja) * | 2005-03-31 | 2011-10-05 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
JP2007026982A (ja) | 2005-07-20 | 2007-02-01 | Matsushita Electric Ind Co Ltd | 固体電池およびそれを有する電池搭載型集積回路装置 |
US8168318B2 (en) | 2007-10-25 | 2012-05-01 | Applied Materials, Inc. | Method for high volume manufacturing of thin film batteries |
JP5508542B2 (ja) * | 2010-10-07 | 2014-06-04 | グエラテクノロジー株式会社 | 二次電池 |
WO2013065093A1 (ja) * | 2011-10-30 | 2013-05-10 | 株式会社日本マイクロニクス | 繰り返し充放電できる量子電池 |
EP2860759B1 (en) * | 2012-06-06 | 2019-03-06 | Kabushiki Kaisha Nihon Micronics | Electrode structure of solid type rechargeable battery |
JP2016501439A (ja) * | 2012-12-19 | 2016-01-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 垂直薄膜電池のマスクレス製造 |
JP2014158379A (ja) * | 2013-02-15 | 2014-08-28 | Renesas Electronics Corp | 半導体装置 |
JP6367575B2 (ja) * | 2014-02-25 | 2018-08-01 | 株式会社日本マイクロニクス | 二次電池搭載回路チップ及びその製造方法 |
-
2015
- 2015-07-31 JP JP2015152490A patent/JP6468966B2/ja active Active
-
2016
- 2016-06-20 KR KR1020187002757A patent/KR102123956B1/ko active IP Right Grant
- 2016-06-20 WO PCT/JP2016/068219 patent/WO2017022347A1/ja active Application Filing
- 2016-06-20 CA CA2992968A patent/CA2992968C/en not_active Expired - Fee Related
- 2016-06-20 US US15/749,306 patent/US10686210B2/en not_active Expired - Fee Related
- 2016-06-20 CN CN201680045200.6A patent/CN107851610A/zh active Pending
- 2016-06-20 EP EP16832626.2A patent/EP3331003A4/en not_active Withdrawn
- 2016-06-28 TW TW105120308A patent/TWI642142B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2992968A1 (en) | 2017-02-09 |
KR20180033198A (ko) | 2018-04-02 |
WO2017022347A1 (ja) | 2017-02-09 |
EP3331003A4 (en) | 2019-07-17 |
CN107851610A (zh) | 2018-03-27 |
KR102123956B1 (ko) | 2020-06-17 |
TW201721805A (zh) | 2017-06-16 |
US10686210B2 (en) | 2020-06-16 |
JP2017034082A (ja) | 2017-02-09 |
TWI642142B (zh) | 2018-11-21 |
EP3331003A1 (en) | 2018-06-06 |
CA2992968C (en) | 2019-10-22 |
US20180226674A1 (en) | 2018-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6264709B1 (en) | Method for making electrical and electronic devices with vertically integrated and interconnected thin-film type battery | |
KR101835459B1 (ko) | 2차 전지 탑재 회로 칩 및 그 제조 방법 | |
US10050320B2 (en) | Integrated circuit with shared electrode energy storage devices | |
US11101491B2 (en) | Semiconductor structures having a micro-battery and methods for making the same | |
CN104319258B (zh) | 一种硅穿孔工艺 | |
JP6468966B2 (ja) | 二次電池搭載チップの製造方法 | |
US10102981B2 (en) | Method of producing a super-capacitor | |
TW201703217A (zh) | 切換電容式dc-dc轉換器及其製造方法 | |
US20110193238A1 (en) | Silicon wafer for semiconductor with powersupply system on the backside of wafer | |
KR20090006962A (ko) | 2차전지 및 이를 구비한 반도체 | |
US10833029B2 (en) | Electronic device and method of manufacturing the same | |
JP2012253354A (ja) | 半導体素子の製造方法 | |
CN104752154A (zh) | 电容器的制作方法 | |
US7105451B2 (en) | Method for manufacturing semiconductor device | |
US10224392B1 (en) | Method of fabricating a semiconductor capacitor | |
JP2021090035A (ja) | 半導体装置の製造方法、半導体装置および半導体装置の中間体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180424 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181012 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190115 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6468966 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |