JP6462462B2 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 99
- 238000003672 processing method Methods 0.000 title claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 86
- 239000000112 cooling gas Substances 0.000 claims description 57
- 239000000126 substance Substances 0.000 claims description 46
- 239000000110 cooling liquid Substances 0.000 claims description 30
- 238000009835 boiling Methods 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 204
- 235000012431 wafers Nutrition 0.000 description 156
- 239000004065 semiconductor Substances 0.000 description 153
- 239000002826 coolant Substances 0.000 description 63
- 239000000498 cooling water Substances 0.000 description 28
- 238000006884 silylation reaction Methods 0.000 description 18
- 239000012071 phase Substances 0.000 description 17
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 12
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
図1は、第1実施形態の基板処理装置の構造を示す断面図である。図1(a)は、基板処理装置の垂直断面を示す。図1(b)は、基板処理装置の水平断面を示す。
図6は、第2実施形態の基板処理装置の構造を示す断面図である。
図7は、第3実施形態の基板処理装置の構造を示す断面図である。
図8は、第4実施形態の基板処理装置の構造を示す断面図である。
図13は、第5実施形態の基板処理装置の構造を示す断面図である。
3a:IPA供給部、3b:IPA配管、
4a:シリル化剤供給部、4b:シリル化剤配管、
5a:冷却ガス供給部、5b:冷却ガス配管、5c:冷却ガス供給口、6:制御部、
7a:冷却水供給部、7b:冷却水貯留部、7c:冷却水入口、7d:冷却水出口、
8a:電源、8b:ペルチェ素子、
9a:冷却液供給部、9b:冷却液ノズル、
9c:冷却液供給口、9d:冷却液配管、
10a:冷却液供給部、10b:冷却液分岐配管、10c:冷却液ノズル、
10d:冷却液供給口、10e:冷却液配管、
11:半導体ウエハ、11a:半導体基板、11b:パターン、12:シリル化膜
Claims (10)
- 基板を収容する収容部と、
前記収容部内の前記基板に1種類以上の薬品を気相状態で供給し、前記1種類以上の薬品は、シリル化剤を含有する第1の薬品を含む薬品供給部と、
前記収容部内の前記基板に前記1種類以上の薬品のいずれかを供給している間に、前記収容部内の前記基板を冷却する冷却部と、
を備え、
前記冷却部は、前記基板に前記第1の薬品が供給されている間の前記基板の温度が前記第1の薬品の沸点よりも低く維持されるように、前記基板を冷却する、基板処理装置。 - 前記1種類以上の薬品はさらに、アルコールを含有する第2の薬品を含む、請求項1に記載の基板処理装置。
- 前記冷却部は、前記基板の温度が前記1種類以上の薬品の沸点よりも低くなるように前記基板を冷却する、請求項1または2に記載の基板処理装置。
- 前記1種類以上の薬品は、第1の沸点を有する薬品と、前記第1の沸点よりも低い第2の沸点を有する薬品とを含み、
前記薬品供給部は、前記第2の沸点を有する薬品を前記基板に供給した後に、前記第1の沸点を有する薬品を前記基板に供給する、請求項1から3のいずれか1項に記載の基板処理装置。 - 前記薬品供給部は、前記第1の沸点を有する薬品を前記基板に供給した後に、前記第2の沸点を有する薬品を再び前記基板に供給する、請求項4に記載の基板処理装置。
- 前記冷却部は、前記基板に冷却用の気体または液体を供給することで、前記基板を冷却する、請求項1から5のいずれか1項に記載の基板処理装置。
- 前記冷却部は、前記基板の付近に配置されたペルチェ素子により前記基板を冷却する、請求項1から5のいずれか1項に記載の基板処理装置。
- 前記冷却部は、前記第1の薬品が前記基板に供給されている全期間において前記基板を冷却する、請求項1から7のいずれか1項に記載の基板処理装置。
- 前記冷却部は、前記第1の薬品が前記基板に供給されている一部期間において前記基板を1回以上冷却する、請求項1から7のいずれか1項に記載の基板処理装置。
- 基板を収容部内に収容し、
前記収容部内の前記基板に、シリル化剤を含有する第1の薬品を含む1種類以上の薬品を気相状態で供給し、
前記収容部内の前記基板に前記1種類以上の薬品のいずれかを供給している間に、前記収容部内の前記基板を冷却する、
ことを含み、
前記基板の冷却は、前記基板に前記第1の薬品が供給されている間の前記基板の温度が前記第1の薬品の沸点よりも低く維持されるように行われる、基板処理方法。
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JP2015075015A JP6462462B2 (ja) | 2015-04-01 | 2015-04-01 | 基板処理装置および基板処理方法 |
US14/836,145 US9748091B2 (en) | 2015-04-01 | 2015-08-26 | Substrate treatment apparatus and substrate treatment method |
US15/670,349 US10290491B2 (en) | 2015-04-01 | 2017-08-07 | Substrate treatment apparatus and substrate treatment method |
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JP6462462B2 true JP6462462B2 (ja) | 2019-01-30 |
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JP6419053B2 (ja) * | 2015-10-08 | 2018-11-07 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP7010629B2 (ja) * | 2017-08-31 | 2022-01-26 | 株式会社Screenホールディングス | 基板乾燥方法および基板処理装置 |
JP7116534B2 (ja) * | 2017-09-21 | 2022-08-10 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN111886676A (zh) * | 2018-04-05 | 2020-11-03 | 中央硝子株式会社 | 晶圆的表面处理方法及用于该方法的组合物 |
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US20040021214A1 (en) * | 2002-04-16 | 2004-02-05 | Avner Badehi | Electro-optic integrated circuits with connectors and methods for the production thereof |
JP3967253B2 (ja) * | 2002-11-08 | 2007-08-29 | 東京エレクトロン株式会社 | 多孔質絶縁膜の形成方法及び多孔質絶縁膜の形成装置 |
US7883739B2 (en) * | 2003-06-16 | 2011-02-08 | Lam Research Corporation | Method for strengthening adhesion between dielectric layers formed adjacent to metal layers |
JP5324361B2 (ja) * | 2009-08-28 | 2013-10-23 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
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KR101266620B1 (ko) | 2010-08-20 | 2013-05-22 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리방법 및 기판처리장치 |
KR20120028672A (ko) * | 2010-09-15 | 2012-03-23 | 삼성전자주식회사 | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
JP5726807B2 (ja) * | 2012-04-24 | 2015-06-03 | 東京エレクトロン株式会社 | パターン形成方法、パターン形成装置、及びコンピュータ可読記憶媒体 |
JP6317547B2 (ja) | 2012-08-28 | 2018-04-25 | 株式会社Screenホールディングス | 基板処理方法 |
JP6148475B2 (ja) | 2013-01-25 | 2017-06-14 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
JP6006145B2 (ja) * | 2013-03-01 | 2016-10-12 | 東京エレクトロン株式会社 | 疎水化処理装置、疎水化処理方法及び疎水化処理用記録媒体 |
JP6223839B2 (ja) | 2013-03-15 | 2017-11-01 | 東京エレクトロン株式会社 | 基板液処理方法、基板液処理装置および記憶媒体 |
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- 2015-08-26 US US14/836,145 patent/US9748091B2/en active Active
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JP2016195207A (ja) | 2016-11-17 |
US10290491B2 (en) | 2019-05-14 |
US20170338102A1 (en) | 2017-11-23 |
US20160293400A1 (en) | 2016-10-06 |
US9748091B2 (en) | 2017-08-29 |
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