JP6456748B2 - フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 - Google Patents
フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 Download PDFInfo
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- JP6456748B2 JP6456748B2 JP2015067785A JP2015067785A JP6456748B2 JP 6456748 B2 JP6456748 B2 JP 6456748B2 JP 2015067785 A JP2015067785 A JP 2015067785A JP 2015067785 A JP2015067785 A JP 2015067785A JP 6456748 B2 JP6456748 B2 JP 6456748B2
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- film
- photomask
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- etching
- lower layer
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- 238000004519 manufacturing process Methods 0.000 title claims description 59
- 238000005530 etching Methods 0.000 claims description 181
- 239000000758 substrate Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
- 230000010363 phase shift Effects 0.000 claims description 24
- 238000002834 transmittance Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 359
- 239000010410 layer Substances 0.000 description 148
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910016006 MoSi Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000013518 transcription Methods 0.000 description 1
- 230000035897 transcription Effects 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015067785A JP6456748B2 (ja) | 2015-03-28 | 2015-03-28 | フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 |
TW105101916A TWI597560B (zh) | 2015-03-28 | 2016-01-21 | 光罩之製造方法、光罩及平面顯示器之製造方法 |
CN201610146972.0A CN106019807B (zh) | 2015-03-28 | 2016-03-15 | 光掩模的制造方法、光掩模及平板显示器的制造方法 |
KR1020160034168A KR101821037B1 (ko) | 2015-03-28 | 2016-03-22 | 포토마스크의 제조 방법, 포토마스크 및 플랫 패널 디스플레이의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015067785A JP6456748B2 (ja) | 2015-03-28 | 2015-03-28 | フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016188881A JP2016188881A (ja) | 2016-11-04 |
JP6456748B2 true JP6456748B2 (ja) | 2019-01-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015067785A Active JP6456748B2 (ja) | 2015-03-28 | 2015-03-28 | フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6456748B2 (zh) |
KR (1) | KR101821037B1 (zh) |
CN (1) | CN106019807B (zh) |
TW (1) | TWI597560B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6259509B1 (ja) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 |
JP6368000B1 (ja) * | 2017-04-04 | 2018-08-01 | 株式会社エスケーエレクトロニクス | フォトマスク及びフォトマスクブランクス並びにフォトマスクの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3312653B2 (ja) * | 1990-12-26 | 2002-08-12 | 株式会社ニコン | フォトマスク |
JP4073882B2 (ja) * | 2004-03-22 | 2008-04-09 | Hoya株式会社 | ハーフトーン型位相シフトマスクブランク |
JP4490980B2 (ja) * | 2007-02-16 | 2010-06-30 | クリーンサアフェイス技術株式会社 | ハーフトーンブランクス |
JP2009258357A (ja) * | 2008-04-16 | 2009-11-05 | Geomatec Co Ltd | フォトマスク用基板及びフォトマスクとその製造方法 |
JP5182029B2 (ja) * | 2008-11-18 | 2013-04-10 | 大日本印刷株式会社 | 階調マスク |
JP5588633B2 (ja) | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
JP5274393B2 (ja) * | 2009-06-30 | 2013-08-28 | アルバック成膜株式会社 | ハーフトーンマスクの製造方法 |
JP5662032B2 (ja) | 2010-02-05 | 2015-01-28 | アルバック成膜株式会社 | マスクブランクス及びハーフトーンマスク |
TWI461833B (zh) * | 2010-03-15 | 2014-11-21 | Hoya Corp | 多調式光罩、多調式光罩之製造方法及圖案轉印方法 |
JP5605917B2 (ja) * | 2011-12-27 | 2014-10-15 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
JP6063650B2 (ja) * | 2012-06-18 | 2017-01-18 | Hoya株式会社 | フォトマスクの製造方法 |
KR101560385B1 (ko) * | 2012-06-20 | 2015-10-26 | 알박 세이마쿠 가부시키가이샤 | 위상 쉬프트 마스크 블랭크, 위상 쉬프트 마스크 및 그 제조 방법 |
JP5865520B2 (ja) * | 2012-12-27 | 2016-02-17 | アルバック成膜株式会社 | 位相シフトマスクおよびその製造方法 |
JP2015049282A (ja) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
-
2015
- 2015-03-28 JP JP2015067785A patent/JP6456748B2/ja active Active
-
2016
- 2016-01-21 TW TW105101916A patent/TWI597560B/zh active
- 2016-03-15 CN CN201610146972.0A patent/CN106019807B/zh active Active
- 2016-03-22 KR KR1020160034168A patent/KR101821037B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101821037B1 (ko) | 2018-03-08 |
CN106019807B (zh) | 2020-04-14 |
KR20160115755A (ko) | 2016-10-06 |
TW201635009A (zh) | 2016-10-01 |
CN106019807A (zh) | 2016-10-12 |
JP2016188881A (ja) | 2016-11-04 |
TWI597560B (zh) | 2017-09-01 |
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