JP6431603B2 - インタポーザ - Google Patents
インタポーザ Download PDFInfo
- Publication number
- JP6431603B2 JP6431603B2 JP2017518742A JP2017518742A JP6431603B2 JP 6431603 B2 JP6431603 B2 JP 6431603B2 JP 2017518742 A JP2017518742 A JP 2017518742A JP 2017518742 A JP2017518742 A JP 2017518742A JP 6431603 B2 JP6431603 B2 JP 6431603B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- interposer
- layer
- light emitting
- mounting portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052782 aluminium Inorganic materials 0.000 claims description 75
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 44
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- 230000001681 protective effect Effects 0.000 claims description 31
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- 238000007747 plating Methods 0.000 claims description 11
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- 239000010410 layer Substances 0.000 description 168
- 239000004020 conductor Substances 0.000 description 70
- 239000010931 gold Substances 0.000 description 69
- 238000004519 manufacturing process Methods 0.000 description 42
- 125000006850 spacer group Chemical group 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000002585 base Substances 0.000 description 8
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
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- 238000000206 photolithography Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- -1 AlSiCu Inorganic materials 0.000 description 1
- 241000441026 Alticus Species 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
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- 238000007711 solidification Methods 0.000 description 1
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
以下では、本実施形態のインタポーザ2aについて、図1及び2に基づいて説明する。
以下では、本実施形態のインタポーザ2dについて図10及び11に基づいて説明する。インタポーザ2dは、発光素子3を覆うキャップ7(図11参照)を接合するための接合用金属層243を備えている点が実施形態1の変形例1のインタポーザ2bと相違する。インタポーザ2dにおいて、インタポーザ2bと同様の構成要素については、インタポーザ2bと同一の符号を付して説明を省略する。
3 発光素子
6 回路基板
20 シリコン基板
21 シリコン酸化膜
22 所定パターンのアルミニウム膜
222 反射面
23 固定部
231 シリコン酸化膜
232 アルミニウム膜
233 めっき層
24 素子実装部
25 端子部
26 Pt層
27 AuSn層
28 Au層
29 保護膜(第1保護膜)
122 枠状のアルミニウム膜
129 第2保護膜
243 接合用金属層
261 Ni膜
262 Pd膜
263 Au膜
Claims (6)
- シリコン基板と、前記シリコン基板の表面上に直接形成されたシリコン酸化膜と、前記シリコン酸化膜の表面上に直接形成された所定パターンのアルミニウム膜と、回路基板に前記シリコン基板を固定するために前記シリコン基板の裏面上に形成された固定部と、前記所定パターンのアルミニウム膜の表面上において局所的に直接形成された、発光素子用の素子実装部と、前記所定パターンのアルミニウム膜の表面上において局所的に直接形成された複数の端子部と、を備え、
前記素子実装部及び前記複数の端子部の各々は、Ni膜とPd膜とAu膜との積層構造又はNi膜とAu膜との積層構造を有し、
前記素子実装部における前記Au膜の表面の所定領域上にAuSn層が形成されており、
前記所定パターンのアルミニウム膜の表面は、前記素子実装部の周りで、光を反射する反射面を形成しており、
前記所定パターンのアルミニウム膜の表面のうち前記素子実装部及び前記複数の端子部それぞれと接していない領域を直接覆っている光透過性の保護膜を備え、
前記保護膜である第1保護膜上に形成され平面視において前記素子実装部を囲むように前記第1保護膜上に直接形成された枠状のアルミニウム膜と、前記枠状のアルミニウム膜よりも幅の狭い枠状であり、前記枠状のアルミニウム膜上に直接形成された接合用金属層と、前記枠状のアルミニウム膜の表面のうち前記接合用金属層と接していない領域を直接覆っている第2保護膜と、を更に備え、
前記枠状のアルミニウム膜は、平面視において前記素子実装部と前記複数の端子部との間に配置されており、
前記接合用金属層は、前記素子実装部及び前記複数の端子部と同じ材料で、かつ、同じ積層構造を有しており、
前記接合用金属層の表面の所定領域に、Pt層とAuSn層とAu層との積層膜が形成されている、
ことを特徴とするインタポーザ。 - 前記保護膜は、酸化ケイ素により形成されている、
ことを特徴とする請求項1記載のインタポーザ。 - 前記素子実装部における前記Au膜の表面の所定領域と前記AuSn層との間に介在するPt層を更に備える、
ことを特徴とする請求項1又は2記載のインタポーザ。 - 前記AuSn層上に直接形成されたAu層を備える、
ことを特徴とする請求項1乃至3のいずれか一項に記載のインタポーザ。 - 前記所定パターンのアルミニウム膜が、前記シリコン酸化膜の表面における外周縁を避けて形成されている、
ことを特徴とする請求項1乃至4のいずれか一項に記載のインタポーザ。 - 前記固定部は、前記シリコン基板の裏面上に直接形成されたシリコン酸化膜と、前記シリコン基板の裏面上の前記シリコン酸化膜の表面上に直接形成されたアルミニウム膜と、前記アルミニウム膜の表面上に形成されためっき層と、を備え、前記めっき層が、前記素子実装部及び前記複数の端子部と同じ積層構造を有する、
ことを特徴とする請求項1乃至5のいずれか一項に記載のインタポーザ。
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US10510603B2 (en) * | 2017-08-31 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive vias in semiconductor packages and methods of forming same |
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