JP6405314B2 - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
- Publication number
- JP6405314B2 JP6405314B2 JP2015544844A JP2015544844A JP6405314B2 JP 6405314 B2 JP6405314 B2 JP 6405314B2 JP 2015544844 A JP2015544844 A JP 2015544844A JP 2015544844 A JP2015544844 A JP 2015544844A JP 6405314 B2 JP6405314 B2 JP 6405314B2
- Authority
- JP
- Japan
- Prior art keywords
- head
- film forming
- mounting table
- metal
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
Description
Claims (17)
- 処理容器と、
前記処理容器内を減圧するための排気装置と、
被処理体を載置するための載置台であり、前記処理容器内に設けられた該載置台と、
前記載置台の上方に設けられた金属ターゲットと、
前記処理容器内にガスを供給する第1のガス供給部と、
前記第1のガス供給部から供給されるガス中の正イオンを前記金属ターゲットに衝突させるための電力を発生する電源と、
酸化ガスを供給する第2のガス供給部と、
前記酸化ガスを載置台に向けて噴射するヘッドであり、前記第2のガス供給部に接続された該ヘッドと、
前記載置台上において被処理体が載置される載置領域と前記金属ターゲットとの間の第1領域と、前記金属ターゲットと前記載置領域との間の空間から離れた第2領域との間で前記ヘッドを移動させるヘッド駆動機構と、
を備え、
前記ヘッドは、前記第1領域に配置されている状態で、前記載置領域上に載置された被処理体を覆うように構成されている、
成膜装置。 - 前記ヘッドに設けられたヒータを更に備える、請求項1に記載の成膜装置。
- 前記酸化ガスの温度が50℃以上300℃以下の範囲の温度に調整される、請求項2に記載の成膜装置。
- 前記載置台に設けられたヒータと、
鉛直方向に延びる前記載置台の中心軸線である第1軸線中心に該載置台を回転させる載置台駆動機構と、
を更に備え、
前記ヘッド駆動機構は、前記載置台の側方において鉛直方向に延在する第2軸線中心に前記ヘッドを軸支しており、
前記ヘッドには、前記第2軸線に対して直交する方向に配列された複数のガス噴射口が設けられている、
請求項1に記載の成膜装置。 - 前記載置台の温度が60℃以上200℃以下の範囲の温度に調整される、請求項4に記載の成膜装置。
- 前記ヘッドは、前記載置領域よりも大きな平面サイズを有する、請求項1〜5の何れか一項に記載の成膜装置。
- 前記載置台の上方に設けられた活性化金属製のターゲットを更に備える、請求項6に記載の成膜装置。
- 前記活性化金属は、Ti又はTaである、請求項7に記載の成膜装置。
- 前記金属ターゲットは、Mgターゲットである、請求項1〜8の何れか一項に記載の成膜装置。
- 請求項1に記載された成膜装置を用いた成膜方法であって、
前記ヘッドを前記第2領域に配置した状態で、被処理体上に、前記金属ターゲットから放出される金属を堆積させる工程と、
前記ヘッドを前記第1領域に配置した状態で、前記被処理体に向けて前記ヘッドから前記酸化ガスを噴射して、前記被処理体上に堆積した前記金属を酸化させる工程と、
を交互に繰り返す、成膜方法。 - 前記成膜装置は、前記ヘッドに設けられたヒータを更に備え、
前記金属を酸化させる工程において、前記ヘッドにおいて加熱された前記酸化ガスにより、前記金属を酸化させる、
請求項10に記載の成膜方法。 - 前記成膜装置は、
前記載置台に設けられたヒータと、
鉛直方向に延びる前記載置台の中心軸線である第1軸線中心に該載置台を回転させる載置台駆動機構と、
を更に備え、
前記ヘッド駆動機構は、前記載置台の側方において鉛直方向に延在する第2軸線中心に前記ヘッドを軸支しており、
前記ヘッドには、前記第2軸線に対して直交する方向に配列された複数のガス噴射口が設けられており、
前記金属を酸化させる工程において、前記ヘッドが前記載置台の上方において前記第2軸線中心に移動される、
請求項10に記載の成膜方法。 - 前記ヘッドは、前記載置領域よりも大きな平面サイズを有している、請求項10〜12の何れか一項に記載の成膜方法。
- 前記金属を堆積させる工程を行う前に、前記第1領域に前記ヘッドを配置した状態で、前記金属ターゲットに正イオンを衝突させる工程を更に含む、請求項13に記載の成膜方法。
- 前記成膜装置は、前記載置台の上方に設けられた活性化金属製のターゲットを更に備え、
最初に前記金属を堆積させる工程を行う前に、前記第1領域に前記ヘッドを配置した状態で前記活性化金属製のターゲットに正イオンを衝突させる工程を更に含む、
請求項13又は14に記載の成膜方法。 - 前記活性化金属は、Ti又はTaである、請求項15に記載の成膜方法。
- 前記金属ターゲットは、Mgターゲットである、請求項10〜16の何れか一項に記載の成膜方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013225766 | 2013-10-30 | ||
JP2013225766 | 2013-10-30 | ||
PCT/JP2014/072636 WO2015064194A1 (ja) | 2013-10-30 | 2014-08-28 | 成膜装置及び成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015064194A1 JPWO2015064194A1 (ja) | 2017-03-09 |
JP6405314B2 true JP6405314B2 (ja) | 2018-10-17 |
Family
ID=53003808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015544844A Active JP6405314B2 (ja) | 2013-10-30 | 2014-08-28 | 成膜装置及び成膜方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10309005B2 (ja) |
EP (1) | EP3064609B1 (ja) |
JP (1) | JP6405314B2 (ja) |
KR (1) | KR101813420B1 (ja) |
TW (1) | TWI620232B (ja) |
WO (1) | WO2015064194A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6955983B2 (ja) | 2017-12-05 | 2021-10-27 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7151368B2 (ja) | 2018-10-19 | 2022-10-12 | 東京エレクトロン株式会社 | 酸化処理モジュール、基板処理システム及び酸化処理方法 |
JP7134112B2 (ja) * | 2019-02-08 | 2022-09-09 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP7361497B2 (ja) * | 2019-05-28 | 2023-10-16 | 東京エレクトロン株式会社 | 成膜装置 |
US20220267893A1 (en) * | 2019-11-11 | 2022-08-25 | Beijing Naura Microelectronics Equipment Co., Ltd. | Sputtering device |
CN113862624B (zh) * | 2021-09-27 | 2023-03-21 | 上海集成电路材料研究院有限公司 | 溅射沉积设备及溅射沉积方法 |
CN113862625B (zh) * | 2021-09-27 | 2022-11-22 | 上海集成电路材料研究院有限公司 | 高通量薄膜沉积设备及薄膜沉积方法 |
WO2024103085A1 (en) * | 2022-11-18 | 2024-05-23 | Technische Universität Wien | Apparatus and method for depositing sublimated matrix to a substrate |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6376868A (ja) | 1986-09-18 | 1988-04-07 | Fujitsu Ltd | スパツタリング装置 |
JPH05230640A (ja) | 1992-02-25 | 1993-09-07 | Fujitsu Ltd | スパッタ装置 |
US5421973A (en) * | 1992-09-08 | 1995-06-06 | Iowa State University Research Foundation, Inc. | Reactive sputter deposition of lead chevrel phase thin films |
US5382339A (en) * | 1993-09-17 | 1995-01-17 | Applied Materials, Inc. | Shield and collimator pasting deposition chamber with a side pocket for pasting the bottom of the collimator |
US5827408A (en) * | 1996-07-26 | 1998-10-27 | Applied Materials, Inc | Method and apparatus for improving the conformality of sputter deposited films |
JPH10140342A (ja) | 1996-11-05 | 1998-05-26 | Canon Inc | スパッタ装置及びその装置による基板の成膜方法 |
KR100278190B1 (ko) | 1997-02-19 | 2001-01-15 | 미다라이 후지오 | 박막형성장치및이를이용한박막형성방법 |
EP0860514B1 (en) * | 1997-02-19 | 2004-11-03 | Canon Kabushiki Kaisha | Reactive sputtering apparatus and process for forming thin film using same |
JPH11152562A (ja) | 1997-11-17 | 1999-06-08 | Canon Inc | スパッター装置および該装置による成膜方法 |
JP3782608B2 (ja) * | 1998-05-22 | 2006-06-07 | キヤノン株式会社 | 薄膜材料および薄膜作成法 |
US20050029091A1 (en) | 2003-07-21 | 2005-02-10 | Chan Park | Apparatus and method for reactive sputtering deposition |
CN101395732A (zh) * | 2006-03-03 | 2009-03-25 | 佳能安内华股份有限公司 | 磁阻效应元件的制造方法以及制造设备 |
EP1840936A1 (de) * | 2006-03-29 | 2007-10-03 | Applied Materials GmbH & Co. KG | Sputterkammer zum Beschichten eines Substrats |
WO2009057583A1 (ja) * | 2007-10-31 | 2009-05-07 | Tohoku University | プラズマ処理システム及びプラズマ処理方法 |
JP5906247B2 (ja) * | 2010-10-22 | 2016-04-20 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 酸素分離装置及び方法 |
CN103250263B (zh) | 2010-12-22 | 2015-07-01 | 株式会社爱发科 | 穿隧磁阻元件的制造方法 |
JP2012149339A (ja) * | 2010-12-28 | 2012-08-09 | Canon Anelva Corp | スパッタリング装置、及び電子デバイスの製造方法 |
JP5998654B2 (ja) * | 2012-05-31 | 2016-09-28 | 東京エレクトロン株式会社 | 真空処理装置、真空処理方法及び記憶媒体 |
JP6305864B2 (ja) * | 2014-07-31 | 2018-04-04 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
-
2014
- 2014-08-28 JP JP2015544844A patent/JP6405314B2/ja active Active
- 2014-08-28 EP EP14857865.1A patent/EP3064609B1/en active Active
- 2014-08-28 KR KR1020167011101A patent/KR101813420B1/ko active IP Right Grant
- 2014-08-28 WO PCT/JP2014/072636 patent/WO2015064194A1/ja active Application Filing
- 2014-08-28 US US15/032,688 patent/US10309005B2/en active Active
- 2014-10-23 TW TW103136623A patent/TWI620232B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP3064609B1 (en) | 2020-09-16 |
US20160251746A1 (en) | 2016-09-01 |
EP3064609A1 (en) | 2016-09-07 |
KR101813420B1 (ko) | 2017-12-28 |
TW201537624A (zh) | 2015-10-01 |
EP3064609A4 (en) | 2017-04-19 |
US10309005B2 (en) | 2019-06-04 |
TWI620232B (zh) | 2018-04-01 |
JPWO2015064194A1 (ja) | 2017-03-09 |
KR20160078969A (ko) | 2016-07-05 |
WO2015064194A1 (ja) | 2015-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6405314B2 (ja) | 成膜装置及び成膜方法 | |
KR101747526B1 (ko) | 성막 장치 및 성막 방법 | |
JP6600307B2 (ja) | 裏側冷却溝を備えるスパッタリングターゲット | |
US20150114835A1 (en) | Film forming apparatus | |
JP7001448B2 (ja) | Pvd処理方法およびpvd処理装置 | |
TWI686492B (zh) | 磁控管濺鍍裝置 | |
WO2019208035A1 (ja) | 成膜装置および成膜方法 | |
US9362167B2 (en) | Method of supplying cobalt to recess | |
JP6859095B2 (ja) | 成膜方法 | |
US20220415634A1 (en) | Film forming apparatus, processing condition determination method, and film forming method | |
JP5087575B2 (ja) | 半導体製造装置、遮蔽プレート及び半導体装置の製造方法 | |
JP7325278B2 (ja) | スパッタ方法およびスパッタ装置 | |
JP7134112B2 (ja) | 成膜装置および成膜方法 | |
US20240183027A1 (en) | Film formation method and film formation apparatus | |
TW201131616A (en) | Method for manufacturing device and manufacturing apparatus | |
JP2004079947A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2005093615A (ja) | 半導体製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170524 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180803 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180904 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180914 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6405314 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |