JP6399767B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6399767B2 JP6399767B2 JP2014045877A JP2014045877A JP6399767B2 JP 6399767 B2 JP6399767 B2 JP 6399767B2 JP 2014045877 A JP2014045877 A JP 2014045877A JP 2014045877 A JP2014045877 A JP 2014045877A JP 6399767 B2 JP6399767 B2 JP 6399767B2
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- Prior art keywords
- layer
- oxide
- oxide semiconductor
- transistor
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 3
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- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
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- 229960001730 nitrous oxide Drugs 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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Description
本実施の形態では、本発明の一態様の半導体装置、及び半導体装置の作製方法の一態様を図1乃至図7を用いて説明する。本実施の形態では、半導体装置の一例として、酸化物半導体層を有するフィン型構造のトランジスタを示す。
図1に半導体装置としてトランジスタ200の構成例を示す。図1(A)は、トランジスタ200の平面図であり、図1(B)は、図1(A)のV1−W1における断面図であり、図1(C)は図1(A)のX1−Y1における断面図である。なお、図1(A)では、煩雑になることを避けるため、トランジスタ200の構成要素の一部(例えば、第2の酸化物層108等)は省略して図示している。なお、以降の平面図においても同様である。
ここで、トランジスタ200に含まれる下地絶縁層102、第1の酸化物層104、酸化物半導体層106、第2の酸化物層108、及びゲート絶縁層114の有するバンド構造について図2を用いて説明する。
図1に示すトランジスタ200の作製方法の一例を図3及び図4を用いて説明する。
図5に、図1に示すトランジスタ200とは、構成の一部が異なる変形例を示す。図5(A)は、トランジスタ210の平面図であり、図5(B)は、図5(A)のV2−W2における断面図であり、図5(C)は、図5(A)のX2−Y2における断面図である。
図6に、図1に示すトランジスタ200とは、構成の一部が異なる変形例を示す。図6(A)は、トランジスタ220の平面図であり、図6(B)は、図6(A)のV3−W3における断面図であり、図6(C)は、図6(A)のX3−Y3における断面図である。
図7に、図1に示すトランジスタ200とは、構成の一部が異なる変形例を示す。図7(A)は、トランジスタ230の平面図であり、図7(B)は、図7(A)のV4−W4における断面図であり、図7(C)は、図7(A)のX4−Y4における断面図である。
本実施の形態では、実施の形態1のトランジスタに適用可能な酸化物半導体層の一例について説明する。
トランジスタに適用する酸化物半導体層は、例えば非単結晶を含んでいてもよい。非単結晶としては、例えば、CAAC(C Axis Aligned Crystal)、多結晶、微結晶等が挙げられる。
CAAC−OS膜は、例えば、多結晶である酸化物半導体スパッタリング用ターゲットを用い、スパッタリング法によって成膜する。当該スパッタリング用ターゲットにイオンが衝突すると、スパッタリング用ターゲットに含まれる結晶領域がa−b面から劈開し、a−b面に平行な面を有する平板状またはペレット状のスパッタリング粒子として剥離することがある。この場合、当該平板状のスパッタリング粒子が、結晶状態を維持したまま基板に到達することで、CAAC−OS膜を成膜することができる。
本発明の一態様に係る半導体装置の一例として、論理回路であるNOR型回路の回路図の一例を図9(A)に示す。図9(B)はNAND型回路の回路図である。
本実施の形態では、実施の形態1に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を、図面を用いて説明する。
本実施の形態では、先の実施の形態で示した半導体装置を携帯電話、スマートフォン、電子書籍などの電子機器に応用した場合の例を図11乃至図14を用いて説明する。
102 下地絶縁層
103 ゲート電極層
104 第1の酸化物層
106 酸化物半導体層
106a チャネル形成領域
106b チャネル形成領域
106c チャネル形成領域
108 第2の酸化物層
110 酸化物積層
112a ソース電極層
112b ドレイン電極層
114 ゲート絶縁層
116 ゲート電極層
200 トランジスタ
210 トランジスタ
220 トランジスタ
230 トランジスタ
250 メモリセル
251 メモリセルアレイ
251a メモリセルアレイ
251b メモリセルアレイ
253 周辺回路
254 容量素子
260 トランジスタ
262 トランジスタ
264 容量素子
801 トランジスタ
802 トランジスタ
803 トランジスタ
804 トランジスタ
811 トランジスタ
812 トランジスタ
813 トランジスタ
814 トランジスタ
901 RF回路
902 アナログベースバンド回路
903 デジタルベースバンド回路
904 バッテリー
905 電源回路
906 アプリケーションプロセッサ
907 CPU
908 DSP
910 フラッシュメモリ
911 ディスプレイコントローラ
912 メモリ回路
913 ディスプレイ
914 表示部
915 ソースドライバ
916 ゲートドライバ
917 音声回路
918 キーボード
919 タッチセンサ
950 メモリ回路
951 メモリコントローラ
952 メモリ
953 メモリ
954 スイッチ
955 スイッチ
956 ディスプレイコントローラ
957 ディスプレイ
1001 バッテリー
1002 電源回路
1003 マイクロプロセッサ
1004 フラッシュメモリ
1005 音声回路
1006 キーボード
1007 メモリ回路
1008 タッチパネル
1009 ディスプレイ
1010 ディスプレイコントローラ
9033 留め具
9034 スイッチ
9035 電源スイッチ
9036 スイッチ
9038 操作スイッチ
9630 筐体
9631a 表示部
9631b 表示部
9632a 領域
9632b 領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9638 操作キー
9639 ボタン
Claims (4)
- 少なくとも第1及び第2のチャネル形成領域を含む酸化物半導体層と、
前記酸化物半導体層の下面に接する領域を有する第1の酸化物層と、
前記酸化物半導体層の上面に接する領域を有する第2の酸化物層と、
前記酸化物半導体層上に接するソース電極層及びドレイン電極層と、
前記酸化物半導体層上に設けられ、前記第1及び第2のチャネル形成領域のそれぞれの側面及び上面と重なる領域を有するゲート電極層と、
前記酸化物半導体層と前記ゲート電極層との間に設けられたゲート絶縁層と、
前記第1の酸化物層の下方に接する第1の絶縁層と、を有し、
前記第2の酸化物層は、前記ソース電極層上及び前記ドレイン電極層上に位置し、且つ、前記第1のチャネル形成領域と前記第2のチャネル形成領域との間の領域において、前記第1の絶縁層と接する領域を有する半導体装置。 - 少なくとも第1及び第2のチャネル形成領域を含む酸化物半導体層と、
前記酸化物半導体層の下面に接する領域を有する第1の酸化物層と、
前記酸化物半導体層の上面に接する領域を有する第2の酸化物層と、
前記酸化物半導体層上に接するソース電極層及びドレイン電極層と、
前記酸化物半導体層上に設けられ、前記第1及び第2のチャネル形成領域のそれぞれの側面及び上面と重なる領域を有する第1のゲート電極層と、
前記酸化物半導体層の下方に設けられ、前記第1及び第2のチャネル形成領域とそれぞれ重なる領域を有する第2のゲート電極層と、
前記第2の酸化物層と、前記第1のゲート電極層との間に設けられた第1のゲート絶縁層と、
前記第1の酸化物層と、前記第2のゲート電極層との間に設けられた第2のゲート絶縁層と、を有し、
前記第2の酸化物層は、前記ソース電極層上及び前記ドレイン電極層上に位置し、且つ前記第1のチャネル形成領域と前記第2のチャネル形成領域との間の領域において、前記第1の酸化物層と接する領域を有する半導体装置。 - 請求項1又は2において、
前記第1の酸化物層及び前記第2の酸化物層はそれぞれ、前記酸化物半導体層を構成する金属元素のうち少なくとも一の金属元素を構成元素として含む半導体装置。 - 請求項1乃至3のいずれか一において、
前記第1の酸化物層及び前記酸化物半導体層は、断面形状において端部が一致する半導体装置。
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TWI644433B (zh) | 2018-12-11 |
JP2021121040A (ja) | 2021-08-19 |
DE112014001257T5 (de) | 2015-12-17 |
US20170301797A1 (en) | 2017-10-19 |
KR20150129825A (ko) | 2015-11-20 |
JP2020031245A (ja) | 2020-02-27 |
US9705001B2 (en) | 2017-07-11 |
CN105009299A (zh) | 2015-10-28 |
US10256347B2 (en) | 2019-04-09 |
WO2014142333A1 (en) | 2014-09-18 |
JP2023052915A (ja) | 2023-04-12 |
JP6626941B2 (ja) | 2019-12-25 |
CN105009299B (zh) | 2019-04-02 |
JP2014199924A (ja) | 2014-10-23 |
KR102208590B1 (ko) | 2021-01-28 |
TW201442242A (zh) | 2014-11-01 |
JP2018186313A (ja) | 2018-11-22 |
JP6891255B2 (ja) | 2021-06-18 |
US20140264324A1 (en) | 2014-09-18 |
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