JP6370515B1 - 半導体装置およびその製造方法 - Google Patents
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Abstract
Description
そこでこれら高周波特性の劣化の改善のため、半導体チップ上に中空構造を形成することで寄生容量の増加を抑制する構造の半導体装置が提案されている(例えば、特許文献1、特許文献2参照)。
また、この半導体チップをパッケージに搭載した場合には、高温高圧で樹脂モールド封止する際に、密着性の弱い部分が破壊され、中空構造内にモールド樹脂が侵入してしまうという問題がある。
半導体チップの主面に電極および配線を有する半導体デバイスと、
前記半導体チップの主面側に、前記半導体デバイスの特定の電極と空間を隔てて当該特定の電極の側方および上方を覆って配置される第1の樹脂構造体と、
前記第1の樹脂構造体の側方および上方と接しつつ、前記第1の樹脂構造体の外側を覆い、当該第1の樹脂構造体の誘電率以下の誘電率を有する第2の樹脂構造体と、
前記第2の樹脂構造体の外側を覆い、当該第2の樹脂構造体より透湿性が小さい絶縁膜と、を備えたことを特徴とするものである。
本発明の実施の形態1に係る半導体装置について以下図を用いて説明する。図1は本実施の形態1に係る半導体装置の一例を示す図である。また、図2は図1のCS1−CS2に沿った断面図である。
配線12が第1の樹脂構造体Aの上方に第2の樹脂構造体Bを挟んで(介して)形成されており、 第2の樹脂構造体Bの外側は、第2の樹脂構造体Bに用いる樹脂より透湿性(単位時間、単位面積当たり、透過する水分量の値。例えば、1m2当たり24時間で何gの水分が透過するかを表す値)が小さい窒化シリコン膜(例えばSiN)などの絶縁膜11および配線12によりに覆われている。
まず、図3に示すように、上述した半導体チップ1に相当する半導体基板15の主面に半導体デバイス2を形成し、絶縁膜7で半導体デバイス2を覆う。そして半導体基板15の主面上と半導体デバイス2上に、感光性ポリイミドなどの感光性樹脂を塗布して樹脂膜を形成した後、露光と現像により樹脂膜をパターニングすることで、ゲート電極3に接触せず、ゲート電極3の側方を囲う第1の樹脂層9を形成する。この際、樹脂構造の上方に配線を形成する箇所も、同様にパターニングし開口しておくことができる。
本発明の実施の形態2に係わる半導体装置について図を用いて以下説明する。
図6は実施の形態2に係る半導体装置の一例を示す断面図である。半導体チップ1の主面に、半導体デバイス2が形成されている。
また、この半導体チップ1においては、上述の絶縁膜11の外側に、第1の樹脂構造体Aに用いられた樹脂よりも誘電率が同じかそれよりも低い、第2の樹脂構造体Bが塗布され、その後、比誘電率が4程度のエポキシ系熱硬化樹脂体23により封止されてパッケージ化される。
なお、以上においては、絶縁膜11の外側を覆う樹脂構造体として誘電率が第1の樹脂構造体A以下の誘電率を持つ第2の樹脂構造体を例に説明したが、この第2の樹脂構造体に代えて、誘電率がそれよりも低い、例えば比誘電率が2程度の、フッ素樹脂に代表される第3の樹脂構造体C(図示せず)を塗布した場合には、さらにその効果が増すことは言うまでもない。
次に、本発明の実施の形態3に係る半導体装置について図を用いて説明する。
図7において、半導体チップ1の主面に、半導体デバイス2が形成されている。この半導体デバイス2は、ひさしを含むY型又はT型のゲート電極3と、ソース電極4と、ドレイン電極5および配線6を有する電界効果トランジスタ(FET)である。FETの他にダイオードなど他のデバイスを形成する場合もある。
また、第2の樹脂構造体Bの外側は、第2の樹脂構造体Bに用いる樹脂より透湿性が小さい窒化シリコン膜(例えばSiN)などの絶縁膜11が覆っている。
次に、本発明の実施の形態4に係る半導体装置について以下図8を用いて説明する。
本実施の形態4に係る半導体装置は、おおよそ、上述した実施の形態2と実施の形態3とを組み合わせた構造となっている。
この実施の形態においては、実施の形態2の場合と異なり(具体的には図8に示すように)、第1の樹脂構造体Aの外側に、第1の樹脂構造体Aに用いられた樹脂よりも低い誘電率を持つ第2の樹脂構造体Bが設けられている。そして、この第2の樹脂構造体Bより透湿性が小さい、窒化シリコン膜(例えばSiN)などの絶縁膜11が、この第2の樹脂構造体Bの外側を覆っている。
さらに、この絶縁膜11の外側には、誘電率が第1の樹脂構造体Aよりも低い、例えば比誘電率が2程度の、フッ素樹脂に代表される第3の樹脂構造体Cが塗布されている。
なお、本実施の形態4に係る半導体装置の作用と効果は、上述した実施の形態2、あるいは実施の形態3と同様であるので、ここではその説明を省略する。
Claims (8)
- 半導体チップの主面に電極および配線を有する半導体デバイスと、
前記半導体チップの主面側に、前記半導体デバイスの特定の電極と空間を隔てて当該特定の電極の側方および上方を覆って配置される第1の樹脂構造体と、
前記第1の樹脂構造体の側方および上方と接しつつ、前記第1の樹脂構造体の外側を覆い、当該第1の樹脂構造体の誘電率以下の誘電率を有する第2の樹脂構造体と、
前記第2の樹脂構造体の外側を覆い、当該第2の樹脂構造体より透湿性が小さい絶縁膜と、
を備えたことを特徴とする半導体装置。 - 多層の配線が前記第2の樹脂構造体の上方に設けられていることを特徴とする請求項1に記載の半導体装置。
- 半導体チップの主面に電極および配線を有する半導体デバイスと、
前記半導体チップの主面側に、前記半導体デバイスの特定の電極と空間を隔てて当該特定の電極の側方および上方を覆って配置される第1の樹脂構造体と、
前記第1の樹脂構造体の側方および上方と接しつつ、前記第1の樹脂構造体の外側を覆い、前記第1の樹脂構造体より透湿性が小さい絶縁膜と、
前記第1の樹脂構造体および前記絶縁膜の外側を覆い、前記第1の樹脂構造体の誘電率以下の誘電率を有する第2の樹脂構造体と、
を備えたことを特徴とする半導体装置。 - 前記半導体デバイス、前記第1の樹脂構造体、前記第2の樹脂構造体、および前記絶縁膜がすべてエポキシ系熱硬化樹脂体により封止され、パッケージ化されていることを特徴とする請求項1から3のいずれか1項に記載の半導体装置。
- 前記第2の樹脂構造体および前記絶縁膜の外側が、前記第1の樹脂構造体および前記第2の樹脂構造体の誘電率以下の誘電率を有する樹脂で構成された第3の樹脂構造体で覆われていることを特徴とする請求項4に記載の半導体装置。
- 前記特定の電極は、ひさしを含み、断面がY型形状あるいはT型形状となっているとともに、前記ひさしの下部に、別の中空構造を有することを特徴とする請求項1から5のいずれか1項に記載の半導体装置。
- 請求項1または請求項5に記載の半導体装置の製造方法であって、
半導体基板の主面に電極および配線を有する半導体デバイスを形成する工程と、
前記半導体デバイスの特定の電極の側方を、非接触に囲う第1の樹脂層を、半導体基板の主面側に形成する工程と、
前記特定の電極の上方に配置される第2の樹脂層を、前記第1の樹脂層の上面に接合させた後に硬化させ、前記特定の電極と空間を隔てて配置する工程と、
前記第1の樹脂層および前記第2の樹脂層の上方と側方に、前記第1の樹脂層および前記第2の樹脂層の樹脂の誘電率より低い誘電率を持つ樹脂により、第3の樹脂層を形成する工程と、
前記第3の樹脂層の上面と側面を、当該第3の樹脂層よりも透湿性が小さい絶縁膜で覆う工程と、
を含むことを特徴とする半導体装置の製造方法。 - 請求項3に記載の半導体装置の製造方法であって、
半導体基板の主面に電極および配線を有する半導体デバイスを形成する工程と、
前記半導体デバイスの特定の電極の側方を非接触に囲う第1の樹脂層を、半導体基板の主面側に形成する工程と、
前記特定の電極の上方に配置される第2の樹脂層を、前記第1の樹脂層の上面に接合させた後に硬化させ、前記特定の電極と空間を隔てて配置する工程と、
前記第1の樹脂層および前記第2の樹脂層の上方と側方を、前記第1の樹脂層および前記第2の樹脂層よりも透湿性が小さい絶縁膜で覆う工程と、
前記絶縁膜の外側を、前記第1の樹脂層および前記第2の樹脂層の誘電率以下の誘電率を有する樹脂で覆う工程と、
を含むことを特徴とする半導体装置の製造方法。
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