JP6350667B2 - マルチmemsモジュール - Google Patents
マルチmemsモジュール Download PDFInfo
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- JP6350667B2 JP6350667B2 JP2016545860A JP2016545860A JP6350667B2 JP 6350667 B2 JP6350667 B2 JP 6350667B2 JP 2016545860 A JP2016545860 A JP 2016545860A JP 2016545860 A JP2016545860 A JP 2016545860A JP 6350667 B2 JP6350667 B2 JP 6350667B2
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
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- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
- H04R1/32—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only
- H04R1/40—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers
- H04R1/406—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired directional characteristic only by combining a number of identical transducers microphones
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- H04R19/005—Electrostatic transducers using semiconductor materials
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/16153—Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2410/00—Microphones
- H04R2410/03—Reduction of intrinsic noise in microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R5/00—Stereophonic arrangements
- H04R5/027—Spatial or constructional arrangements of microphones, e.g. in dummy heads
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Otolaryngology (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Details Of Audible-Bandwidth Transducers (AREA)
- Obtaining Desirable Characteristics In Audible-Bandwidth Transducers (AREA)
Description
チップは、担体基板上に接着され、または、はんだ接合により基板に連結されていることができる。チップがフリップチップ技術で、基板表面で接続パッドに溶接されていることも可能である。ASICチップは、例えばバンプ連結部を介して、基板上面の接続面に連結可能である。蓋も接着剤を用いて、または、はんだ材料を用いて基板の上面に連結可能である。
今までに述べたMEMSチップまたはASICチップに加えて、このモジュールは、音響評価に関する特殊な要件を満たすために、さらなるチップと、さらなる信号線と、さらなる開口と、バックチャンバとを具備可能である。特に空間的に複雑な音響ノイズ信号では、したがって従来のMEMSモジュールよりも信号品質が良好なマルチMEMSモジュールを得ることができる。
ASIC ASICチップ
BD ボンディングワイヤ
BU バンプ連結部
D 蓋
F,F1,F2 膜
G 筐体
I 内側空間
K 蓋
KL 接着剤/はんだ接合部
MC MEMSチップ
MC1 第1MEMSチップ
MC2 第2MEMSチップ
ML 金属部層
MMM マルチMEMSモジュール
O 開口
O1 第1開口
O2 第2開口
OO 上方開口
QS 横断方向ウェブ
RV1 第1バックチャンバ
SL 信号線
TS 担体基板
UO 下方開口
V ヴィア
V1,V2 凹部
Claims (12)
- マルチMEMSモジュール(MMM)であって、
・内側空間(I)と第1開口(O1)と第2開口(O2)とを備えた筐体(G)と、
・前記第1開口(O1)に音響的に結合している第1MEMSチップ(MC1)と、
・前記第2開口(O2)に音響的に結合している第2MEMSチップ(MC2)と、
・前記筐体上に前記双方のMEMSチップ(MC1、MC2)の間に配置されたASICチップ(ASIC)と、
・前記双方のMEMSチップ(MC1、MC2)と前記ASICチップ(ASIC)とを相互接続する信号線(SL)を備えた回路とを具備し、
前記双方のMEMSチップの各々に割り当てられるバックチャンバは、前記ASICチップと結合された障壁によって音響的に隔離されている、マルチMEMSモジュール(MMM)。 - ステレオ音響評価のためのMEMSマイクロホンとして形成されている、請求項1に記載のマルチMEMSモジュール。
- MEMSマイクロホンとして、方向に依存して音響評価をするために形成されている、請求項1および2のいずれか1項に記載のマルチMEMSモジュール。
- 前記筐体(G)は、
その上面および/またはその下面に信号線(SL)を備えた単一層の担体基板(TS)、
および/または
その下面および/または上面および/または内側金属部層(ML)に、信号線(SL)を備えた複数層の担体基板(TS)
を具備する、請求項1〜3のいずれか1項に記載のマルチMEMSモジュール。 - ・前記筐体(G)の部分としての蓋(K)、および/または
・筐体(G)の部分として、担体基板(TS)中にある凹部(V1、V2)、および/または、
・前記チップ(MC1、MC2)のうちの少なくとも1つの上に載置されているフィルムカプセル(F)
により形成されている第1バックチャンバ(RV1)を備えた、
請求項1〜4のいずれか1項に記載のマルチMEMSモジュール。 - 第1バックチャンバ(RV1)と、これから音響的に切り離された第2バックチャンバ(RV2)とを備え、
・蓋(K)中の隔壁が前記筐体(G)の部分として、もしくは、担体基板(TS)中の凹部(V1、V2)中の隔壁が前記筐体(G)の部分として設けられていて、または、
・前記ASICチップ(ASIC)が、前記双方のバックチャンバ(RV1、RV2)を隔離する、
請求項1〜5のいずれか1項に記載のマルチMEMSモジュール。 - 前記双方の開口(O1、O2)のうちの少なくとも1つが、
・担体基板(TS)中で前記モジュール(MMM)の下面で、
・蓋(K)中またはフィルムカプセル(F)中で、前記モジュール(MMM)の上面で、または、
・蓋(K)中またはフィルムカプセル(F)中で、前記モジュール(MMM)の側壁で
形成されている、請求項1〜6のいずれか1項に記載のマルチMEMSモジュール。 - ・前記第1MEMSチップ(MC1)は、前記第1開口(O1)を内側から密閉し、
・前記第2MEMSチップ(MC2)は、前記第2開口(O2)を内側から密閉し、
・前記筐体(G)は、前記双方のMEMSチップ(MC1、MC2)を音響的に切り離すために、担体基板(TS)と、横断方向ウェブ(QS)を備えた蓋(K)とを具備し、
・前記MEMSチップ(MC1、MC2)と、前記ASICチップ(ASIC)との間の信号線(SL)が、少なくとも部分的に前記担体基板(TS)の表面上および前記横断方向ウェブ(QS)の下方、または、前記担体基板(TS)中の中間層を通って導かれている、請求項1に記載のマルチMEMSモジュール。 - ・前記筐体(G)は、担体基板(TS)を具備し、
・前記MEMSチップ(MC1、MC2)は、担体基板の上面(TS)上に配置されていて、
・前記ASICチップ(ASIC)は、前記担体基板(TS)の上面で、前記MEMSチップ(MC1、MC2)間に配置されていて、または、前記担体基板(TS)中に埋め込まれている、請求項1〜8のいずれか1項に記載のマルチMEMSモジュール。 - さらに、2つのさらなるMEMSチップ(MC)を具備し、
・前記第1チップ(MC1)と前記第2チップ(MC2)と前記2つのさらなるMEMSチップ(MC)とは、前記ASICチップ(ASIC)の周りに配置されていて、
・前記MEMSチップ(MC,MC1、MC2)の少なくとも2つは、それぞれ、前記モジュールの開口(O)を内側から閉鎖している、請求項1〜9のいずれか1項に記載のマルチMEMSモジュール。 - 前記第1チップ(MC1)と、前記第2チップ(MC2)と、前記2つのさらなるMEMSチップ(MC)とは、前記ASICチップ(ASIC)の周りで、長方形の4つの角に配置されている、請求項1〜10のいずれか1項に記載のマルチMEMSモジュール。
- 前記ASICチップ(ASIC)は、前記モジュールの全てのMEMSチップ(MC1、MC2)に対して、電源供給するためおよび信号増幅するための回路を具備している、請求項1〜11のいずれか1項に記載のマルチMEMSモジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014100464.7A DE102014100464B4 (de) | 2014-01-16 | 2014-01-16 | Multi-MEMS-Modul |
DE102014100464.7 | 2014-01-16 | ||
PCT/EP2014/076603 WO2015106880A1 (de) | 2014-01-16 | 2014-12-04 | Multi-mems-modul |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017509195A JP2017509195A (ja) | 2017-03-30 |
JP6350667B2 true JP6350667B2 (ja) | 2018-07-04 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016545860A Expired - Fee Related JP6350667B2 (ja) | 2014-01-16 | 2014-12-04 | マルチmemsモジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US10015600B2 (ja) |
JP (1) | JP6350667B2 (ja) |
DE (1) | DE102014100464B4 (ja) |
WO (1) | WO2015106880A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3262852A4 (en) * | 2015-10-30 | 2018-03-14 | Goertek Inc. | Band-pass acoustic filter and acoustic sensing apparatus |
US10186468B2 (en) | 2016-03-31 | 2019-01-22 | Infineon Technologies Ag | System and method for a transducer in an eWLB package |
ITUA20162957A1 (it) | 2016-04-28 | 2017-10-28 | St Microelectronics Srl | Modulo di trasduzione multi-dispositivo, apparecchiatura includente il modulo di trasduzione e metodo di fabbricazione del modulo di trasduzione |
ITUA20162959A1 (it) * | 2016-04-28 | 2017-10-28 | St Microelectronics Srl | Modulo di trasduzione multi-camera, apparecchiatura includente il modulo di trasduzione multi-camera e metodo di fabbricazione del modulo di trasduzione multi-camera |
TWM543239U (zh) * | 2017-01-26 | 2017-06-11 | 日月光半導體製造股份有限公司 | 微機電封裝結構 |
DE102017201481A1 (de) | 2017-01-31 | 2018-08-02 | Robert Bosch Gmbh | Mikromechanische Modul und Verfahren zum Erfassen von Schwingungen, insbesondere Körperschall |
US10150667B2 (en) | 2017-02-13 | 2018-12-11 | Obsidian Sensors, Inc. | Panel level packaging for MEMS application |
US10544040B2 (en) * | 2017-05-05 | 2020-01-28 | Dunan Microstaq, Inc. | Method and structure for preventing solder flow into a MEMS pressure port during MEMS die attachment |
WO2018218073A1 (en) | 2017-05-25 | 2018-11-29 | Knowles Electronics, Llc | Microphone package for fully encapsulated asic and wires |
KR102378675B1 (ko) * | 2017-10-12 | 2022-03-25 | 삼성전자 주식회사 | 마이크로폰, 마이크로폰을 포함하는 전자 장치 및 전자 장치의 제어 방법 |
DE102017129442A1 (de) * | 2017-12-11 | 2019-06-13 | Infineon Technologies Ag | Druckmessanordnung |
JP2020036214A (ja) | 2018-08-30 | 2020-03-05 | Tdk株式会社 | Memsマイクロフォン |
JP2020036215A (ja) | 2018-08-30 | 2020-03-05 | Tdk株式会社 | Memsマイクロフォン |
CN109362013B (zh) * | 2018-12-07 | 2023-11-14 | 潍坊歌尔微电子有限公司 | 组合传感器 |
US20210092500A1 (en) * | 2019-09-22 | 2021-03-25 | xMEMS Labs, Inc. | Package structure of sound producing device and manufacturing method thereof |
US11805342B2 (en) | 2019-09-22 | 2023-10-31 | xMEMS Labs, Inc. | Sound producing package structure and manufacturing method thereof |
DE102020210130A1 (de) | 2020-08-11 | 2022-02-17 | Robert Bosch Gesellschaft mit beschränkter Haftung | Chip-Anordnung; Verfahren zur Herstellung einer Chip-Anordnung; Verfahren zum Betreiben einer Chip-Anordnung |
KR20220042019A (ko) * | 2020-09-25 | 2022-04-04 | 삼성전자주식회사 | 다용도 음향 센서 |
US11284187B1 (en) * | 2020-10-26 | 2022-03-22 | Fortemedia, Inc. | Small-array MEMS microphone apparatus and noise suppression method thereof |
CN113551707A (zh) * | 2021-07-19 | 2021-10-26 | 歌尔微电子股份有限公司 | 组合传感器和电子设备 |
CN114615607B (zh) * | 2022-05-09 | 2022-08-12 | 华天科技(南京)有限公司 | 一种mems麦克风封装结构及制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4472613B2 (ja) | 2005-10-07 | 2010-06-02 | パナソニック株式会社 | マイクロホン装置 |
DE102005053765B4 (de) | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
DE102008005686B9 (de) | 2008-01-23 | 2019-06-27 | Tdk Corporation | MEMS-Bauelement und Verfahren zur Herstellung eines MEMS-Bauelements |
US20100086146A1 (en) | 2008-10-02 | 2010-04-08 | Fortemedia, Inc. | Silicon-based microphone package |
CN102187685B (zh) | 2008-10-14 | 2015-03-11 | 美商楼氏电子有限公司 | 具有多个换能器元件的传声器 |
JP4505035B1 (ja) | 2009-06-02 | 2010-07-14 | パナソニック株式会社 | ステレオマイクロホン装置 |
US8428286B2 (en) * | 2009-11-30 | 2013-04-23 | Infineon Technologies Ag | MEMS microphone packaging and MEMS microphone module |
US8853564B2 (en) * | 2010-04-30 | 2014-10-07 | Ubotic Intellectual Property Co. Ltd. | Air cavity package configured to electrically couple to a printed circuit board and method of providing same |
DE102010026519B4 (de) | 2010-07-08 | 2016-03-10 | Epcos Ag | Gehäuse mit MEMS-Mikrofon, elektrisches Gerät mit Gehäuse mit MEMS-Mikrofon und Verfahren zur Herstellung |
WO2012051340A1 (en) * | 2010-10-12 | 2012-04-19 | Analog Devices, Inc. | Microphone package with embedded asic |
US8611566B2 (en) | 2011-03-01 | 2013-12-17 | Epcos Ag | MEMS-microphone |
US8804982B2 (en) | 2011-04-02 | 2014-08-12 | Harman International Industries, Inc. | Dual cell MEMS assembly |
JP2012238964A (ja) * | 2011-05-10 | 2012-12-06 | Funai Electric Co Ltd | 音分離装置、及び、それを備えたカメラユニット |
DE102012101505B4 (de) | 2012-02-24 | 2016-03-03 | Epcos Ag | Verfahren zur Herstellung eines Sensors |
US9432759B2 (en) * | 2013-07-22 | 2016-08-30 | Infineon Technologies Ag | Surface mountable microphone package, a microphone arrangement, a mobile phone and a method for recording microphone signals |
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WO2015106880A1 (de) | 2015-07-23 |
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