JP6334716B2 - 前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ - Google Patents
前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ Download PDFInfo
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- JP6334716B2 JP6334716B2 JP2016548004A JP2016548004A JP6334716B2 JP 6334716 B2 JP6334716 B2 JP 6334716B2 JP 2016548004 A JP2016548004 A JP 2016548004A JP 2016548004 A JP2016548004 A JP 2016548004A JP 6334716 B2 JP6334716 B2 JP 6334716B2
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- 210000002445 nipple Anatomy 0.000 claims description 64
- 238000010926 purge Methods 0.000 claims description 53
- 229920001971 elastomer Polymers 0.000 claims 1
- 239000000806 elastomer Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 122
- 239000012530 fluid Substances 0.000 description 35
- 238000009826 distribution Methods 0.000 description 30
- 239000012080 ambient air Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 20
- 239000003570 air Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 230000003068 static effect Effects 0.000 description 13
- 230000000670 limiting effect Effects 0.000 description 10
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- 238000000429 assembly Methods 0.000 description 9
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- 238000012800 visualization Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 239000000779 smoke Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
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- -1 polyethylene Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67376—Closed carriers characterised by sealing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67379—Closed carriers characterised by coupling elements, kinematic members, handles or elements to be externally gripped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67386—Closed carriers characterised by the construction of the closed carrier
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Packaging Frangible Articles (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Description
Ptotal=P2+Q2=P2+1/2□□□V22 式(2)
上記の式において、Ptotalは総圧(ディフューザアセンブリ100全体において略一定)、P1はディフューザアセンブリ100の位置1における静圧、Q1は位置1における動圧、□は内在気体の密度(ディフューザアセンブリ100全体において略一定)、V1は位置1における内部流速、P2はディフューザアセンブリ100の位置2における静圧、Q2は位置2における動圧、V2は位置2における内部流速であり、位置2は位置1の下流側に位置している。図5には、排出速度V1’およびV2’(各位置1および2からディフューザを出る気体の速度)およびディフューザアセンブリ100を包囲する周囲圧力Poも示されている。
3つのディフューザ部382a,382b,382cは非限定的に図示するものであり、複数のディフューザ部の一例にすぎない。他の実施形態においては、ディフューザ部はこれより多くてもよいし少なくてもよい。
図20A、20Bおよび20Cに、前面開放式ウエハ容器の容器部604に装着されたディフューザタワー600を示す。ディフューザタワー600は、突出部もしくはボス部612等の容器部構造に固定されたブラケット608を介して容器部604に装着されている。タワーブラケットはクランプ部614を有し、クランプ部614は、クランプ部614に対して管状ディフューザが弾性的に固定される寸法を有している。
図22に、ディフューザ702、継手704およびパッケージ712を有する後付けキット700を示す。後付けキット700には、取り付け方法を示す指示記載表示706も記載されている。
Claims (11)
- 前面開放式ウエハ容器の多孔性タワーディフューザアセンブリであって、
ベース部、一体状片寄り部および一体状上向きニップル部を有している入口継手と、
管状部およびフレア状下部を有する多孔性タワーと、
を備えおり、
前記フレア状下部が前記上向きニップル部と係合可能であるか、該上向きニップル部と係合してる、多孔性タワーディフューザアセンブリ。 - パージノズルおよび逆止弁と係合するためのエラストマーグロメットをさらに備えており、前記逆止弁が前記グロメットの貫通穴に嵌入される寸法を有している、請求項1に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 追加の入口継手と多孔性タワーとをさらに備えている、請求項1に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 前記フレア状下部よりも先端側の部分と比較して、該フレア状下部に対してパージを増加させる手段をさらに備えている、請求項1乃至3のいずれか一項に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 前記タワーが、多孔率の異なる少なくとも2つの異なる部分を有している、請求項1乃至3のいずれか一項に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 多孔率のより高い部分が、多孔率のより低い部分よりも前記タワーの継手側端部に近い、請求項5に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 前記タワーが、径方向流出に対する抵抗を有する少なくとも2つの異なる部分を有している、請求項1乃至3のいずれか一項に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 前記上向きニップル部が複数のかえし部を有している、請求項1乃至3のいずれか一項に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 前記上向きニップル部が穴を有し、前記多孔性タワーが前記継手に装着されたときに前記穴に隣接して環状スペースが形成され、前記穴が該環状スペースに隣接していることによって、パージガスが前記フレア状下部から拡散される、請求項8に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 前記上向きニップル部が、前記多孔性タワーと締り嵌めを形成する寸法を有するねじ部または複数のかえし部を有している、請求項1乃至3のいずれか一項に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
- 前記ニップル部に径方向穴を有し、前記ニップル部が、前面開放式ウエハ容器内において上方に延びて最も低い第1ウエハのみにほぼ到達する寸法を有している、請求項10に記載の前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361890611P | 2013-10-14 | 2013-10-14 | |
US61/890,611 | 2013-10-14 | ||
US201461940744P | 2014-02-17 | 2014-02-17 | |
US61/940,744 | 2014-02-17 | ||
PCT/US2014/060533 WO2015057739A1 (en) | 2013-10-14 | 2014-10-14 | Towers for substrate carriers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016538732A JP2016538732A (ja) | 2016-12-08 |
JP2016538732A5 JP2016538732A5 (ja) | 2017-01-19 |
JP6334716B2 true JP6334716B2 (ja) | 2018-05-30 |
Family
ID=52828621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016548004A Active JP6334716B2 (ja) | 2013-10-14 | 2014-10-14 | 前面開放式ウエハ容器の多孔性タワーディフューザアセンブリ |
Country Status (8)
Country | Link |
---|---|
US (1) | US10347517B2 (ja) |
EP (2) | EP4235759A3 (ja) |
JP (1) | JP6334716B2 (ja) |
KR (1) | KR102093200B1 (ja) |
CN (1) | CN105900217B (ja) |
SG (2) | SG11201602916VA (ja) |
TW (1) | TWI606534B (ja) |
WO (1) | WO2015057739A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5987988B2 (ja) * | 2013-07-03 | 2016-09-07 | 村田機械株式会社 | 保管容器 |
JP6562078B2 (ja) * | 2015-08-31 | 2019-08-21 | 村田機械株式会社 | パージ装置、パージストッカ、及びパージ方法 |
US10672637B2 (en) * | 2015-09-04 | 2020-06-02 | Entegris, Inc. | Internal purge diffuser with offset manifold |
TWI709441B (zh) * | 2016-09-05 | 2020-11-11 | 美商恩特葛瑞斯股份有限公司 | 基板容器及用於該基板容器之清潔塔總成 |
JP6977217B2 (ja) * | 2016-09-06 | 2021-12-08 | 信越ポリマー株式会社 | 基板収納容器及び気体置換ユニット |
JP7226684B2 (ja) * | 2017-01-18 | 2023-02-21 | 信越ポリマー株式会社 | 基板収納容器 |
KR102461290B1 (ko) * | 2017-03-27 | 2022-11-01 | 신에츠 폴리머 가부시키가이샤 | 기판 수납 용기 |
WO2018203384A1 (ja) | 2017-05-02 | 2018-11-08 | ミライアル株式会社 | 基板収納容器 |
US11948821B2 (en) | 2018-04-25 | 2024-04-02 | Miraial Co., Ltd. | Substrate storing container |
US11610795B2 (en) | 2018-08-28 | 2023-03-21 | Entegris, Inc. | Membrane diffuser for a substrate container |
JP7257418B2 (ja) * | 2018-12-12 | 2023-04-13 | ミライアル株式会社 | 基板収納容器 |
JP2020150245A (ja) * | 2019-03-13 | 2020-09-17 | 國立臺北科技大學 | 気体拡散装置及びその基板キャリア |
US11551957B2 (en) * | 2019-04-26 | 2023-01-10 | Entegris, Inc. | Purge connectors and modules for a substrate container |
US11104496B2 (en) * | 2019-08-16 | 2021-08-31 | Gudeng Precision Industrial Co., Ltd. | Non-sealed reticle storage device |
US20230054753A1 (en) | 2021-08-17 | 2023-02-23 | Gudeng Precision Industrial Co., Ltd. | Gas diffusion device, and wafer container including the same |
WO2023183517A1 (en) * | 2022-03-25 | 2023-09-28 | Entegris, Inc. | Wafer container purge port assembly |
WO2023230090A1 (en) * | 2022-05-27 | 2023-11-30 | Entegris, Inc. | Filter module |
WO2024145403A1 (en) * | 2022-12-30 | 2024-07-04 | Entegris, Inc. | Substrate container with purge gas diffuser |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364007A (en) * | 1993-10-12 | 1994-11-15 | Air Products And Chemicals, Inc. | Inert gas delivery for reflow solder furnaces |
US5879458A (en) | 1996-09-13 | 1999-03-09 | Semifab Incorporated | Molecular contamination control system |
JP2002170876A (ja) * | 2000-12-04 | 2002-06-14 | Ebara Corp | 基板搬送容器 |
JP4374133B2 (ja) | 2000-12-05 | 2009-12-02 | 株式会社日立国際電気 | 基板処理装置および基板処理方法 |
US20030035713A1 (en) * | 2001-08-20 | 2003-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Moisture-controlled wafer storage container and method of using |
JP4204302B2 (ja) * | 2002-10-25 | 2009-01-07 | 信越ポリマー株式会社 | 収納容器 |
US7201276B2 (en) | 2003-11-07 | 2007-04-10 | Entegris, Inc. | Front opening substrate container with bottom plate |
KR101168455B1 (ko) | 2004-06-07 | 2012-07-25 | 엔테그리스, 아이엔씨. | 오염물 제거 장치 및 방법 |
KR100706250B1 (ko) * | 2005-07-07 | 2007-04-12 | 삼성전자주식회사 | 반도체 소자 제조 장치 및 방법 |
JP2008066635A (ja) * | 2006-09-11 | 2008-03-21 | Canon Inc | 容器内をパージガスによりパージする装置 |
US7758338B2 (en) | 2007-05-29 | 2010-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate carrier, port apparatus and facility interface and apparatus including same |
CN102017119B (zh) | 2008-03-13 | 2014-01-01 | 安格斯公司 | 具有管状环境控制部件的晶圆容器 |
JP5241607B2 (ja) * | 2009-05-21 | 2013-07-17 | 信越ポリマー株式会社 | 基板収納容器 |
CN102812545B (zh) * | 2009-12-10 | 2016-08-03 | 恩特格里公司 | 用于微环境中均匀分布吹扫气体的多孔隔板 |
JP6087161B2 (ja) * | 2012-02-03 | 2017-03-01 | 東京エレクトロン株式会社 | 基板収容容器のパージ方法 |
-
2014
- 2014-10-14 WO PCT/US2014/060533 patent/WO2015057739A1/en active Application Filing
- 2014-10-14 SG SG11201602916VA patent/SG11201602916VA/en unknown
- 2014-10-14 JP JP2016548004A patent/JP6334716B2/ja active Active
- 2014-10-14 EP EP23171032.8A patent/EP4235759A3/en active Pending
- 2014-10-14 SG SG10201803039XA patent/SG10201803039XA/en unknown
- 2014-10-14 US US15/029,605 patent/US10347517B2/en active Active
- 2014-10-14 KR KR1020167012401A patent/KR102093200B1/ko active IP Right Grant
- 2014-10-14 CN CN201480064391.1A patent/CN105900217B/zh active Active
- 2014-10-14 EP EP14854237.6A patent/EP3058585B1/en active Active
- 2014-10-14 TW TW103135504A patent/TWI606534B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102093200B1 (ko) | 2020-03-25 |
EP3058585B1 (en) | 2023-06-07 |
SG10201803039XA (en) | 2018-05-30 |
KR20160068937A (ko) | 2016-06-15 |
CN105900217B (zh) | 2020-07-31 |
EP4235759A3 (en) | 2023-10-04 |
EP3058585A1 (en) | 2016-08-24 |
EP3058585A4 (en) | 2017-05-24 |
US10347517B2 (en) | 2019-07-09 |
TWI606534B (zh) | 2017-11-21 |
EP4235759A2 (en) | 2023-08-30 |
US20160276190A1 (en) | 2016-09-22 |
SG11201602916VA (en) | 2016-05-30 |
TW201530679A (zh) | 2015-08-01 |
JP2016538732A (ja) | 2016-12-08 |
WO2015057739A1 (en) | 2015-04-23 |
CN105900217A (zh) | 2016-08-24 |
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