JP6320372B2 - レーザーダイオード用サブマウント及びレーザーダイオードユニットを製造するためのレーザーアブレーションプロセス - Google Patents
レーザーダイオード用サブマウント及びレーザーダイオードユニットを製造するためのレーザーアブレーションプロセス Download PDFInfo
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- JP6320372B2 JP6320372B2 JP2015515127A JP2015515127A JP6320372B2 JP 6320372 B2 JP6320372 B2 JP 6320372B2 JP 2015515127 A JP2015515127 A JP 2015515127A JP 2015515127 A JP2015515127 A JP 2015515127A JP 6320372 B2 JP6320372 B2 JP 6320372B2
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- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000608 laser ablation Methods 0.000 title description 4
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- 238000002679 ablation Methods 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 13
- 239000000835 fiber Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 238000005520 cutting process Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laser Beam Processing (AREA)
- Semiconductor Lasers (AREA)
Description
32 バリ
34 はんだストリップ
38 コンタクト
40 レーザーダイオードユニット
42 キャリア
44 ダイシング線
50 ベース
52 レーザー
54 レーザーヘッド
58 分離溝
Claims (19)
- サブマウント及び前記サブマウントにはんだ付けされたレーザーダイオードを各々含む複数のレーザーダイオードユニットを製造する方法であって、
セラミックキャリア及び前記キャリア上のヒートシンク用金属層を含むベースを提供することと、
前記金属層の表面上に所定のパターンで向けられる複数のレーザー光パルスを発生させることによって、前記金属層を所望の深さにアブレーションすることと、
前記セラミックキャリアを複数のサブマウントにダイシングすることと、を備えた方法。 - 前記ベースのダイシングの前に、前記金属層の表面上に間隔の空いた複数のはんだストリップを堆積させることを更に備えた請求項1に記載の方法。
- 各サブマウントごとに1個ずつレーザーダイオードをはんだ付けすることを更に備えた請求項2に記載の方法。
- 前記金属層のアブレーションが、異なる極性のコンタクト間に分離溝を提供すること、及び、前記キャリア内の複数のダイシング線に沿って前記金属層の厚さを低減することを含む、請求項1に記載の方法。
- 前記金属層の総厚さに対応する前記所望の深さで前記ダイシング線に沿って前記所望の深さまで前記金属層に対する照射が行われる、請求項4に記載の方法。
- 前記金属層の総厚さの一部に対応する前記所望の深さまで前記ダイシング線に沿って前記金属層に対する照射が行われる、請求項4に記載の方法。
- 前記ダイシング線に沿った前記金属層の蒸発が、前記金属層の厚さが低減した複数の領域であって、前記ダイシング線よりも各々幅広な複数の領域を形成することによって、前記セラミックキャリアのエッジから内向きに間隔の空いた金属層を各々備えた前記複数のサブマウントを提供することを含む、請求項4に記載の方法。
- 前記金属層のアブレーションが、パルス繰り返し率、パルス持続時間、ビーム出力、線速度、及びパス回数並びにこれらの組み合わせから成る群から選択されたレーザービームパラメータを制御して、前記所望の深さ及びバリの高さを提供することを含む、請求項1に記載の方法。
- 前記金属層が銀サブ層を備えて構成される、請求項1に記載の方法。
- セラミックキャリアと、前記キャリア上の少なくとも銀サブ層を含むヒートシンク用金属層と、前記金属層にはんだ付けされたレーザーダイオードとを各々含む複数のサブマウントを製造するためのシステムであって、
前記金属層の表面上に所定のパターンで向けられる複数の光パルスを放出するように動作可能なパルスレーザーと、
少なくとも一つのレーザーパラメータを制御して、所定の領域内の前記金属層を所望の深さにアブレーションするように動作可能な制御装置と、を備えたシステム。 - 前記所定のパターンが、分離溝を画定する領域と、前記キャリアを通る各ダイシング線の上方の前記金属層の領域と、を含む、請求項10に記載のシステム。
- 前記所望の深さが均一であり、前記金属層の総厚さに対応している、請求項11に記載のシステム。
- 前記分離溝を画定する領域の所望の深さが、前記金属層の総厚さに対応し、前記ダイシング線の上方の領域の所望の深さが前記金属層の総厚さ又は一部に対応している、請求項11に記載のシステム。
- 前記パルスレーザーが、ファイバーレーザー、半導体レーザー、ガスレーザー、及びダイレーザーから選択された構成を有する、請求項10に記載のシステム。
- 各サブマウントが、前記セラミックキャリアの周囲から内向きに間隔の空いた金属層の対向するエッジを有する、請求項10に記載のシステム。
- 前記レーザーのパラメータが、パルス繰り返し率、パルス持続時間、ビーム出力、線速度、及びパス回数並びにこれらの組み合わせから成る群から選択される、請求項11に記載のシステム。
- 前記パルス持続時間がナノ秒からサブナノ秒の範囲内にある、請求項16に記載のシステム。
- 前記パルスレーザーの出力が0.5Wから略500Wの間の範囲内にある、請求項11に記載のシステム。
- 前記レーザーが、略500nmから略10マイクロメートルの間の周波数範囲内のパルスを放出する、請求項10に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261653083P | 2012-05-30 | 2012-05-30 | |
US61/653,083 | 2012-05-30 | ||
PCT/US2013/042991 WO2014035504A2 (en) | 2012-05-30 | 2013-05-29 | Laser ablation process for manufacturing submounts for laser diode and laser diode units |
Publications (2)
Publication Number | Publication Date |
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JP2015525476A JP2015525476A (ja) | 2015-09-03 |
JP6320372B2 true JP6320372B2 (ja) | 2018-05-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015515127A Active JP6320372B2 (ja) | 2012-05-30 | 2013-05-29 | レーザーダイオード用サブマウント及びレーザーダイオードユニットを製造するためのレーザーアブレーションプロセス |
Country Status (6)
Country | Link |
---|---|
US (1) | US20200153199A9 (ja) |
EP (1) | EP2856586B1 (ja) |
JP (1) | JP6320372B2 (ja) |
KR (1) | KR102069724B1 (ja) |
CN (1) | CN104584343B (ja) |
WO (1) | WO2014035504A2 (ja) |
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JP5174698B2 (ja) * | 2009-01-27 | 2013-04-03 | Towa株式会社 | 電子部品製造用の切削装置及び切削方法 |
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JP2012009767A (ja) * | 2009-11-27 | 2012-01-12 | Kyocera Corp | 多数個取り配線基板およびその製造方法、ならびに配線基板およびその製造方法 |
JP5453123B2 (ja) * | 2010-01-19 | 2014-03-26 | 株式会社ディスコ | 切削方法 |
JP5452247B2 (ja) * | 2010-01-21 | 2014-03-26 | 東芝機械株式会社 | レーザダイシング装置 |
US8743165B2 (en) * | 2010-03-05 | 2014-06-03 | Micronic Laser Systems Ab | Methods and device for laser processing |
JP5495869B2 (ja) * | 2010-03-10 | 2014-05-21 | 株式会社ディスコ | レーザー加工溝の確認方法 |
JP5604186B2 (ja) * | 2010-06-21 | 2014-10-08 | 株式会社ディスコ | 加工装置 |
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WO2014035504A2 (en) | 2014-03-06 |
JP2015525476A (ja) | 2015-09-03 |
KR20150016528A (ko) | 2015-02-12 |
WO2014035504A3 (en) | 2014-05-30 |
US20200153199A9 (en) | 2020-05-14 |
EP2856586B1 (en) | 2020-10-21 |
CN104584343A (zh) | 2015-04-29 |
US20160352070A1 (en) | 2016-12-01 |
CN104584343B (zh) | 2018-09-25 |
EP2856586A2 (en) | 2015-04-08 |
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KR102069724B1 (ko) | 2020-01-23 |
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