JP6315887B2 - 高反射率/帯域制限反射器を内蔵する光励起面発光レーザ - Google Patents
高反射率/帯域制限反射器を内蔵する光励起面発光レーザ Download PDFInfo
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- 238000002310 reflectometry Methods 0.000 title claims description 43
- 230000005855 radiation Effects 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 43
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 description 34
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- 229910010413 TiO 2 Inorganic materials 0.000 description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 10
- 230000005284 excitation Effects 0.000 description 10
- 238000004088 simulation Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000002872 contrast media Substances 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
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- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
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- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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Description
ここで、λlはレーザ放射の中心(ピーク)波長であり、n(λl)はレーザ放射の波長における層材料の屈折率である。
Claims (9)
- 中心レーザ波長の放射を放出するように構成された半導体利得領域と、
前記半導体利得領域の方へ向けて中心ポンプ波長のポンプ放射ビームを放出するように構成されたポンプ光源と、
分布ブラッグ反射器(DBR)を含む第1の反射器であって、前記中心レーザ波長に中心がある60nm未満の帯域幅全域で90%よりも大きい反射率を有しており、また前記中心ポンプ波長において50%未満の反射率を有する、第1の反射器と、
第2の反射器と、を含み、
前記半導体利得領域は、前記第1の反射器と前記第2の反射器の間に配置されているとともに、
前記半導体利得領域は、第1の面および第2の面とを有し、
前記半導体利得領域の前記第1の面に隣接して、前記ポンプ放射ビーム内に前記第1の反射器が配置してあり、
前記半導体利得領域の前記第2の面に隣接して反射面が形成され、
前記第2の反射器と前記反射面の間には空隙が設けられている、レーザ構造。 - 前記第1の反射器が多くの層対を含み、各層対は第1の層と第2の層とを含み、前記第1の層の光学的厚さが前記中心レーザ波長の3/4であり、前記第2の層の光学的厚さが前記中心レーザ波長の3/4である、請求項1に記載のレーザ構造。
- 層対の個数が6よりも大きい、請求項2に記載のレーザ構造。
- 前記第1の反射器が、第1の熱伝導率を有する第1の部分と、
前記第1の熱伝導率よりも小さい第2の熱伝導率を有する第2の部分と、を含む請求項1に記載のレーザ構造。 - 前記中心ポンプ波長が370〜530nmの間にあり、前記中心レーザ波長が390〜550nmの範囲内にある、請求項1に記載のレーザ構造。
- 前記ポンプ放射ビームが、前記第1の反射器の表面上に、前記第1の反射器の前記表面の法線に対して所定の角度で入射する、請求項1に記載のレーザ構造。
- 前記空隙の厚さを調節するように構成された位置決め要素をさらに含む、請求項1に記載のレーザ構造。
- 前記ポンプ放射ビームが複数のモードを含み、前記中心レーザ波長の放射が単一のモードを含む、請求項1に記載のレーザ構造。
- 中心レーザ波長の放射を放出するように構成された半導体利得領域と、第1および第2の反射器と、前記半導体利得領域に隣接して配置した反射面と、を含むレーザの操作であって、前記第1および第2の反射器は主要な光キャビティを形成し、前記反射面および前記第2の反射器は補助的な光キャビティを形成する、操作と、
所定の入力モード数を有するポンプ放射を放出するように構成されたポンプ光源の操作であって、前記ポンプ放射は前記半導体利得領域の方へ向けて、前記半導体利得領域内に少なくとも部分的に吸収される、操作と、
前記入力モード数よりも少ない出力モード数を前記レーザが出力するまで、前記反射面と前記第2の反射器の間の空隙を調節することと、を含む方法。
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US13/427,335 | 2012-03-22 | ||
US13/427,335 US9124062B2 (en) | 2012-03-22 | 2012-03-22 | Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector |
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JP2013197593A JP2013197593A (ja) | 2013-09-30 |
JP6315887B2 true JP6315887B2 (ja) | 2018-04-25 |
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US (1) | US9124062B2 (ja) |
JP (1) | JP6315887B2 (ja) |
CN (1) | CN103326241B (ja) |
DE (1) | DE102013204964B4 (ja) |
GB (1) | GB2500491B (ja) |
TW (1) | TWI569549B (ja) |
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