JP6300386B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6300386B2 JP6300386B2 JP2017507557A JP2017507557A JP6300386B2 JP 6300386 B2 JP6300386 B2 JP 6300386B2 JP 2017507557 A JP2017507557 A JP 2017507557A JP 2017507557 A JP2017507557 A JP 2017507557A JP 6300386 B2 JP6300386 B2 JP 6300386B2
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- semiconductor device
- insulating substrate
- conductive block
- semiconductor
- semiconductor element
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Description
導電板106と、端子電極107と、半導体素子と絶縁基板とを接合する接合層108と、導電板と半導体素子とを接合する接合層109と、導電板と導電性ブロックとを接合する接合層110と、導電性ブロックと絶縁基板とを接合する接合層111と、絶縁基板と放熱基板とを接合する接合層112、及びゲートワイヤ113を備える。
絶縁層の厚さは半導体装置に必要な絶縁特性に合わせ、0.1〜1.5mmの範囲に設定される。本実施形態においては、絶縁層103Iには、厚さ0.6mm程度のAlN(窒化アルミニウム)を用いた。絶縁層103Iの裏面には、厚さ0.2mm程度の銅のベタパターン(配線層)がろう付けされている。絶縁層103Iの表面には、厚さ0.3mm程度のCuの配線パターン(配線層)がろう付けされている。絶縁基板103の表面側の配線はドレイン配線パターン103C、ソース配線パターン103E、ゲート配線103Gに分かれている。
次に本実施例で示す半導体装置の製造方法について図4を用いて説明する。はじめに、絶縁基板103上に酸化銅微粒子を有機溶剤に混ぜたペースト115を塗布する(a工程)。その後、MOSFET101を塗布されたペーストの上に搭載し(b工程)、MOSFET101の上にも同ペーストを塗布し(c工程)、その上に導電板106を搭載する(d工程)。さらに導電板106の上にも同ペーストを塗布し(e工程)、導電性ブロック105を搭載する(f工程)。次に、放熱基板104の上に酸化銅粒子を有機溶剤に混ぜたペーストを塗布し(g工程)、その上に、導電性ブロック105の搭載まで終えた絶縁基板103を搭載し、導電性ブロック105の上面を加圧しながら、水素雰囲気中にて300℃で加熱することにより、ペースト中の酸化銅微粒子が還元すると共に焼結し各界面が接合する(h工程)。その後、ゲートワイヤ113をワイヤボンディングする(i工程)。このようなプロセスにより複数の接合界面を一括で接合することができ、製造コストを低減することができる。
Claims (13)
- 端子電極と、
放熱基板と、
前記放熱基板上に配置され配線層を備える絶縁基板と、
前記絶縁基板上に配置された複数の半導体素子と、
前記半導体素子の表面電極と電気的に接続された導電性ブロックと、 を備え、
前記導電性ブロックは凸部を有し、
前記凸部は前記絶縁基板と接合し、
前記導電性ブロックは前記複数の半導体素子の各々に接合され、
前記複数の半導体素子の各々は、前記導電性ブロックの凸部と前記端子電極との接合部に対して略等間隔となるように配置していることを特徴とする半導体装置。 - 請求項1に記載の半導体装置であって、
前記凸部は、前記導電性ブロックと接合する前記表面電極と同じノー ドの配線層上に接合されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置であって、
前記導電性ブロックと前記絶縁基板との接合面の面積は、前記半導体素子の面積よりも大きいことを特徴とする半導体装置。 - 請求項1に記載の半導体装置であって、
前記凸部と前記半導体素子の間隔は5mm以下であることを特徴とする半導体装置。 - 請求項1乃至4のいずれかに記載の半導体装置であって、
前記導電性ブロックは導電板を介して前記半導体素子の表面電極と接合していることを特徴とする半導体装置。 - 請求項5に記載の半導体装置であって、
前記導電板の熱膨張係数は、前記半導体素子の熱膨張係数より大きく、前記導電性ブロックの熱膨張係数よりも小さいことを特徴とする半導体装置。 - 請求項1乃至6のいずれかに記載の半導体装置であって、
前記絶縁基板と前記放熱基板は焼結金属層を介して接合していることを特徴とする半導体装置。 - 請求項1乃至6のいずれかに記載の半導体装置であって、
前記半導体素子の表面電極と前記導電性ブロック、前記導電性ブロックと前記絶縁基板の配線層の少なくともいずれかは、焼結金属層を介して接合していることを特徴とする半導体装置。 - 請求項5又は6に記載の半導体装置であって、
前記半導体素子の表面電極と前記導電性ブロック、前記導電性ブロックと前記絶縁基板の配線層、前記半導体素子の表面電極と前記導電板、前記絶縁基板の配線層と前記導電板の少なくともいずれかは、焼結金属層を介して接合していることを特徴とする半導体装置。 - 請求項7乃至9のいずれかに記載の半導体装置であって、
前記焼結金属層は銅を含むことを特徴とする半導体装置。 - 前記絶縁基板と前記放熱基板は金属焼結体により間欠的に接合されていることを特徴とする請求項7に記載の半導体装置。
- 請求項1乃至11のいずれかに記載の半導体装置であって、
前記放熱基板は銅からなることを特徴とする半導体装置。 - 請求項12に記載の半導体装置であって、
前記放熱基板はフィン加工されていることを特徴とする半導体装置。
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