JP6283679B2 - ベア・チップ・ダイをボンディングする方法 - Google Patents
ベア・チップ・ダイをボンディングする方法 Download PDFInfo
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- JP6283679B2 JP6283679B2 JP2015541717A JP2015541717A JP6283679B2 JP 6283679 B2 JP6283679 B2 JP 6283679B2 JP 2015541717 A JP2015541717 A JP 2015541717A JP 2015541717 A JP2015541717 A JP 2015541717A JP 6283679 B2 JP6283679 B2 JP 6283679B2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/262—Sn as the principal constituent
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Description
a)スクリーンおよび孔版印刷は高速な技法ではあるが、これらは必要な分解能を持たない(約100um)。接触モードおよび基板のウェブの動きにより、位置ずれが起こり易くなる。これらは接触モードのプロセスなので、脆弱な基板への損傷が生じる可能性があり、チップの装着の前に材料の単一層を被着できるだけである。該技法は、非平坦な表面を取り扱えず、特にフォイル・ベースのロール・ツー・ロールのプロセスに対してウェブの変形を補償することができない。さらに、スクリーンの作製が高価で、フレキシブルとはとても言えず、これらは、スクリーン印刷については10,000〜100,000回の稼働後に、孔版印刷については200,000回の稼働後に取り替えなければならない。最後に、適切な結果を得るためには定期的な清掃およびメンテナンスが欠かせない。
b)分注およびジェット方式は非接触工法であり、孔版またはマスクを必要としない。しかしながら、これら方式の分解能は250umまでに限定され、これはほとんどのベア・ダイSiチップおよび小型受動部品に対して不十分である。さらに、これらは、通常秒あたり10ドットのスループットを有する比較的に低速なプロセスである。
c)ピン転写は有力候補となる方法であるが、転写(transfer)される層の粘度範囲および厚さに制限があり、転写される形状がフレキシブルでない。
− 硬化型導電性接着剤またはフラックス基剤ソルダー・ペーストのボンディング材料、および該ボンディング材料層に隣接する動的放出層を含むドナー・フィルムを準備するステップと、
− レーザ・システムのレーザ・ビームを整列させ、基板表面から距離を保ってドナー・フィルムを導くステップと、
− 動的放出層が活性化されて、ボンディング材料層から転写されたボンディング物質によって接続パッドまたは接続パッド構造体の選択された部分が覆われるように、動的放出層上にレーザ・ビームを作用させるステップと、
− マイクロ電子部品のパッドおよび基板パッド構造体の一方または両方上のボンディング物質が、パッド構造体とそれぞれのパッドとの間の電気接続を形成するように、マイクロ電子部品のパッドを該パッド構造体に宛がうステップと、
− ボンディング物質の導電性接着剤を硬化させる、またはソルダー・ペーストをリフローさせることによって、1Mpaを上回るせん断強度でマイクロ電子部品をボンディングするステップと、
を含む。
− 硬化型導電性接着剤151、および動的放出層152を含むドナー・フィルムを準備するステップと、
− レーザ・システムのレーザ・ビームを整列させ、基板表面から距離を保ってドナー・フィルムを導くステップと、
− 動的放出層が活性化されて、ドナー・フィルムから転写される接着剤50によって接続パッドまたは接続パッド構造体の選択された部分が覆われるように、動的放出層上にレーザ・ビームを作用させるステップであって、レーザ・ビームは、転写される接着剤が硬化性を保つようにタイミングおよびエネルギを制限される、該作用させるステップと、
− マイクロ電子部品10のパッドおよびパッド構造体の一方または両方上のボンディング物質が、パッド構造体とそれぞれのパッドとの間の電気接続を形成するように、マイクロ電子部品10のパッドを該パッド構造体に宛がうステップと、
− 該パッドと該パッド構造体との間の導電性接着剤を硬化させ、1Mpaを上回るせん断強度でマイクロ電子部品をボンディングするステップと、
を含む。
− ソルダー・ペースト151、および動的放出層152を含むドナー・フィルムを準備するステップと、
− レーザ・システムのレーザ・ビームを整列させ、基板表面から距離を保ってドナー・フィルムを導くステップと、
− 動的放出層が活性化されて、ドナー・フィルムから転写されたソルダー・ペースト50によって接続パッドまたは接続パッド構造体の選択された部分が覆われるように、動的放出層上にレーザ・ビームを作用させるステップであって、レーザ・ビームは、転写されるソルダー・ペーストが10%を上回る容積パーセントのフラックスから成るフラックスを含むように、タイミングおよびエネルギを制限される、該作用させるステップと、
− マイクロ電子部品10のパッドおよびパッド構造体の一方または両方上のソルダー・ペーストが、パッド構造体とそれぞれのパッドとの間の電気接続を形成するように、マイクロ電子部品10のパッドを該パッド構造体に宛がうステップと、
− パッドとパッド構造体との間のソルダー・ペーストをリフローさせて、1Mpaを上回るせん断強度でマイクロ電子部品をボンディングするステップと、
を含む。
− 導電性および非導電性ダイ・ボンディング物質60を受け側に移動させるLIFT転写プロセスによって相互接続を生成すること250、
− ベア・チップ部品10、例えば、シリコン・ベースのベア・チップ部品またはLED10などを、ピック・アンド・プレース・ユニット255によって、基板20上のターゲット域の相互接続材料の上に供給し、その圧力を制御すること、
− 熱硬化ユニット260による、導電性および非導電性接着剤60の熱硬化および/またはソルダー・ペーストのリフローによって、ダイ・チップ部品10を固定すること、
を含めることができる。
Claims (14)
- 一つ以上の電気接続パッドを有するマイクロ電子部品(10)を、それぞれ一つ以上の接続パッドを介して前記マイクロ電子部品に相互接続するように配置された接続パッド構造体(40)を基板表面に有する基板(20)上にボンディングする方法であって、前記方法は、
− 硬化型導電性接着剤またはフラックス基剤ソルダー・ペーストのボンディング材料層(151)、および前記ボンディング材料層に隣接する犠牲動的放出層(152)を含むドナー・フィルムを準備するステップと、
− レーザ・システムのレーザ・ビームを整列させ、前記基板表面から距離を保って前記ドナー・フィルムを導くステップと、
− 前記動的放出層が活性化されて、前記ボンディング材料層から転写されたボンディング物質(50)によって前記接続パッドまたは前記接続パッド構造体の選択された部分が覆われるように、前記動的放出層上に前記レーザ・ビームを作用させるステップと、
− 前記マイクロ電子部品(10)のパッドおよび前記パッド構造体の一方または両方上の前記ボンディング物質が、前記パッド構造体とそれぞれのパッドとの間の電気接続を形成するように、前記マイクロ電子部品(10)の前記パッドを前記パッド構造体に宛がうステップと、
− 前記ボンディング物質の前記導電性接着剤を硬化または前記ソルダー・ペーストをリフローさせることによって、1Mpaを上回るせん断強度で前記マイクロ電子部品をボンディングするステップと、
を含む、方法。 - 前記ボンディング物質が、作業温度域で熱可塑性であり、前記作業温度域から高められた温度の硬化温度域で熱硬化される、請求項1に記載の方法。
- 前記作業温度域が、摂氏10度〜摂氏180度の範囲にわたる、請求項2に記載の方法。
- 前記基板が、少なくとも1cmの曲率半径を有するフレキシブル基板(20)である、
請求項1ないし請求項3のいずれか1項に記載の方法。 - 前記マイクロ電子部品の表面への前記距離が1〜200ミクロンの範囲内に保たれる、請求項1ないし請求項4のいずれか1項に記載の方法。
- 前記ボンディング材料層が、10〜50ミクロンの間の範囲内の厚さを有する、請求項1ないし請求項5のいずれか1項に記載の方法。
- 前記ドナー・フィルムが、事前加工されたパターニングを備えて準備される、請求項1ないし請求項6のいずれか1項に記載の方法。
- 事前加工されたパターニングが、レーザ・スポット・サイズと等しいかまたはそれより小さいグリッド・サイズを有するグリッドを形成する、請求項7に記載の方法。
- 前記パターニングが、40〜80ミクロンの範囲にあるグリッド・ピッチを有する、請求項8に記載の方法。
- 前記接続パッドが80マイクロメートルより小さい、請求項1ないし請求項9のいずれか1項に記載の方法。
- 前記ボンディング物質が、作業温度域では粘性の熱硬化樹脂であって、その粘度が1〜160Pa.sの間の範囲にある、請求項1ないし請求項10のいずれか1項に記載の方法。
- 転写されたボンディング物質が、硬化可能に保たれるか、または10%を上回る容積パーセントのソルダー・フラックスから成るように、前記レーザ・ビームのタイミングおよびエネルギが制限される、請求項1ないし請求項11のいずれか1項に記載の方法。
- 一つ以上の電気接続パッドを有するマイクロ電子部品(10)を、それぞれ一つ以上の接続パッドを介して前記マイクロ電子部品に相互接続するように配置された接続パッド構造体(40)を基板表面に有する基板(20)上にボンディングする方法であって、前記方法は、
− 硬化型導電性接着剤(151)、および犠牲動的放出層(152)を含むドナー・フィルムを準備するステップと、
− レーザ・システムのレーザ・ビームを整列させ、前記基板表面から距離を保って前記ドナー・フィルムを導くステップと、
− 前記動的放出層が活性化されて、前記ドナー・フィルムから転写された接着剤(50)によって前記接続パッドまたは前記接続パッド構造体の選択された部分が覆われるように、前記動的放出層上に前記レーザ・ビームを作用させるステップであって、前記レーザ・ビームは、前記転写される接着剤が硬化性を保つように、タイミングおよびエネルギを制限される、前記作用させるステップと、
− 前記マイクロ電子部品(10)のパッドおよび前記パッド構造体の一方または両方上の前記ボンディング物質が、前記パッド構造体とそれぞれのパッドとの間の電気接続を形成するように、前記マイクロ電子部品(10)の前記パッドを前記パッド構造体に宛がうステップと、
− 前記パッドと前記パッド構造体との間の前記導電性接着剤を硬化させ、1Mpaを上回るせん断強度で前記マイクロ電子部品をボンディングするステップと、
を含む、方法。 - 一つ以上の電気接続パッドを有するマイクロ電子部品(10)を、それぞれ一つ以上の接続パッドを介して前記マイクロ電子部品に相互接続するように配置された接続パッド構造体(40)を基板表面に有する基板(20)上にボンディングする方法であって、前記方法は、
− ソルダー・ペースト(151)、および犠牲動的放出層(152)を含むドナー・フィルムを準備するステップと、
− レーザ・システムのレーザ・ビームを整列させ、前記基板表面から距離を保って前記ドナー・フィルムを導くステップと、
− 前記動的放出層が活性化されて、前記ドナー・フィルムから転写されたソルダー・ペースト(50)によって前記接続パッドまたは前記接続パッド構造体の選択された部分が覆われるように、前記動的放出層上に前記レーザ・ビームを作用させるステップであって、前記レーザ・ビームは、前記転写されるソルダー・ペーストが10%を上回る容積パーセントのフラックスから成るフラックスを含むように、タイミングおよびエネルギを制限される、前記作用させるステップと、
− 前記マイクロ電子部品(10)のパッドおよび前記パッド構造体の一方または両方上の前記ソルダー・ペーストが、前記パッド構造体とそれぞれのパッドとの間の電気接続を形成するように、前記マイクロ電子部品(10)の前記パッドを前記パッド構造体に宛がうステップと、
− 前記パッドと前記パッド構造体との間の前記ソルダー・ペーストをリフローさせて、1Mpaを上回るせん断強度で前記マイクロ電子部品をボンディングするステップと、
を含む、方法。
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- 2013-11-08 WO PCT/NL2013/050800 patent/WO2014073963A1/en active Application Filing
- 2013-11-08 TW TW102140687A patent/TWI674654B/zh active
- 2013-11-08 CN CN201380065264.9A patent/CN104854686B/zh active Active
- 2013-11-08 EP EP13801876.7A patent/EP2917931B1/en active Active
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EP2917931A1 (en) | 2015-09-16 |
WO2014073963A1 (en) | 2014-05-15 |
US9859247B2 (en) | 2018-01-02 |
CN104854686A (zh) | 2015-08-19 |
EP2731126A1 (en) | 2014-05-14 |
US20150294951A1 (en) | 2015-10-15 |
JP2015534285A (ja) | 2015-11-26 |
CN104854686B (zh) | 2018-11-27 |
TW201426920A (zh) | 2014-07-01 |
KR20150106875A (ko) | 2015-09-22 |
TWI674654B (zh) | 2019-10-11 |
KR102160321B1 (ko) | 2020-09-28 |
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