JP6281858B2 - 光学デバイス - Google Patents
光学デバイス Download PDFInfo
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- JP6281858B2 JP6281858B2 JP2012275215A JP2012275215A JP6281858B2 JP 6281858 B2 JP6281858 B2 JP 6281858B2 JP 2012275215 A JP2012275215 A JP 2012275215A JP 2012275215 A JP2012275215 A JP 2012275215A JP 6281858 B2 JP6281858 B2 JP 6281858B2
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- 229910052751 metal Inorganic materials 0.000 claims description 99
- 239000002184 metal Substances 0.000 claims description 99
- 239000000463 material Substances 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 19
- 239000002344 surface layer Substances 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000005365 phosphate glass Substances 0.000 claims description 4
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- 238000003384 imaging method Methods 0.000 description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
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- 229920000178 Acrylic resin Polymers 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
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- -1 etc.) Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Description
図1は、本発明の第一実施形態に係る光学デバイス1の断面模式図である。光学デバイス1は、ベース基板2と、ベース基板2の上に実装される光学チップ3と、光学チップ3を収納しベース基板2に金属接合材10を介して接合される透光性の蓋体6とを備える。光学チップ3はベース基板2とは反対側の表面に光学活性領域4を有する。蓋体6は凹部5を有し、凹部5に光学チップ3を収容する。
図2は、本発明の第二実施形態に係る光学デバイスの製造方法を表す工程図である。図3及び図4は、本発明の第二実施形態に係る光学デバイスの製造工程の説明図である。同一の部分又は同一の機能を有する部分には同一の符号を付している。
2 ベース基板
3 光学チップ
4 光学活性領域
5 凹部
6 蓋体
7 ワイヤー
8 外部電極
9 内部電極
10 金属接合材、10a 第一金属膜、10b 第二金属膜
11 貫通電極
12 電極パッド
Claims (5)
- ベース基板と、
前記ベース基板に実装され、前記ベース基板とは反対側の表面に光学活性領域を有する光学チップと、
凹部を有し、前記凹部に前記光学チップを収容して前記ベース基板に金属接合材を介して接合される透光性の蓋体と、を備え、
前記蓋体は、母材に粉砕された形態のリン酸塩ガラスを有しており、前記リン酸塩ガラスによってフィルター機能を有する光学デバイス。 - 前記金属接合材は、前記ベース基板の側に形成される第一金属膜と前記蓋体の側に形成される第二金属膜を含み、
前記第一又は第二金属膜は、下地層がCr、Ni、Ta、Al、Cuのいずれかを含む層からなり、表面層がAu、Snのいずれかを含む層からなる積層構造を有する請求項1に記載の光学デバイス。 - 前記金属接合材は、前記ベース基板の側に形成される第一金属膜と前記蓋体の側に形成される第二金属膜を含み、前記第一又は第二金属膜はナノ銀粒子から形成される請求項1に記載の光学デバイス。
- 前記金属接合材は、前記ベース基板の側に形成される第一金属膜と前記蓋体の側に形成される第二金属膜を含み、
前記第一金属膜と前記第二金属膜とは超音波接合又は半田接合により接合される請求項1に記載の光学デバイス。 - 前記金属接合材は導電膜を含み、前記ベース基板と前記蓋体6とが陽極接合により接合される請求項1に記載の光学デバイス。
Priority Applications (1)
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JP2012275215A JP6281858B2 (ja) | 2012-12-18 | 2012-12-18 | 光学デバイス |
Applications Claiming Priority (1)
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JP2012275215A JP6281858B2 (ja) | 2012-12-18 | 2012-12-18 | 光学デバイス |
Publications (2)
Publication Number | Publication Date |
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JP2014120635A JP2014120635A (ja) | 2014-06-30 |
JP6281858B2 true JP6281858B2 (ja) | 2018-02-21 |
Family
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JP2012275215A Active JP6281858B2 (ja) | 2012-12-18 | 2012-12-18 | 光学デバイス |
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JP (1) | JP6281858B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016115770A (ja) * | 2014-12-12 | 2016-06-23 | アオイ電子株式会社 | 半導体デバイスおよびその製造方法 |
JP2017215499A (ja) * | 2016-06-01 | 2017-12-07 | エルジー ディスプレイ カンパニー リミテッド | 表示装置の製造方法 |
JP6833385B2 (ja) * | 2016-07-29 | 2021-02-24 | エルジー ディスプレイ カンパニー リミテッド | 表示装置の製造方法および製造装置 |
JP6702213B2 (ja) * | 2017-01-31 | 2020-05-27 | 信越化学工業株式会社 | 合成石英ガラスリッド用基材及び合成石英ガラスリッド並びにそれらの製造方法 |
WO2019038846A1 (ja) * | 2017-08-23 | 2019-02-28 | 日本碍子株式会社 | 光学部品の製造方法及び透明封止部材の製造方法 |
WO2019054368A1 (ja) * | 2017-09-15 | 2019-03-21 | 国立研究開発法人産業技術総合研究所 | 基板の接合方法及び封止構造 |
DE102018106959A1 (de) * | 2018-03-23 | 2019-09-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
JP6897640B2 (ja) | 2018-08-02 | 2021-07-07 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3361270B2 (ja) * | 1997-04-04 | 2003-01-07 | ホーヤ株式会社 | ガラス製品の製造方法およびフィルター |
JPWO2006025139A1 (ja) * | 2004-09-01 | 2008-05-08 | 松下電器産業株式会社 | 回路基板とその製造方法及びこれを用いた電子部品 |
JP2006267154A (ja) * | 2005-03-22 | 2006-10-05 | Ngk Insulators Ltd | 光デバイス及び光監視用デバイス |
JP2007165503A (ja) * | 2005-12-13 | 2007-06-28 | Seiko Epson Corp | 気密封止構造および圧電デバイスとその製造方法 |
JP5407490B2 (ja) * | 2008-03-31 | 2014-02-05 | 旭硝子株式会社 | 固体撮像素子パッケージ用窓ガラス |
JP2010177375A (ja) * | 2009-01-28 | 2010-08-12 | Citizen Electronics Co Ltd | 発光装置及び発光装置の製造方法 |
JP5477066B2 (ja) * | 2009-07-15 | 2014-04-23 | 旭硝子株式会社 | 光学用カバーガラスの製造方法及び光学用カバーガラス |
FR2953679B1 (fr) * | 2009-12-04 | 2012-06-01 | Thales Sa | Boitier electronique hermetique et procede d'assemblage hermetique d'un boitier |
JP5743075B2 (ja) * | 2011-03-31 | 2015-07-01 | セイコーインスツル株式会社 | 光学センサおよび光学センサの製造方法 |
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2012
- 2012-12-18 JP JP2012275215A patent/JP6281858B2/ja active Active
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