JP6254748B1 - 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 - Google Patents
高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 Download PDFInfo
- Publication number
- JP6254748B1 JP6254748B1 JP2017519702A JP2017519702A JP6254748B1 JP 6254748 B1 JP6254748 B1 JP 6254748B1 JP 2017519702 A JP2017519702 A JP 2017519702A JP 2017519702 A JP2017519702 A JP 2017519702A JP 6254748 B1 JP6254748 B1 JP 6254748B1
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- single crystal
- crystal silicon
- silicon substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 209
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 95
- 238000010438 heat treatment Methods 0.000 claims abstract description 74
- 238000012546 transfer Methods 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 238000011068 loading method Methods 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 61
- 239000001301 oxygen Substances 0.000 claims description 61
- 229910052760 oxygen Inorganic materials 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000010453 quartz Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000005401 electroluminescence Methods 0.000 claims description 16
- 238000005424 photoluminescence Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 39
- 229910052796 boron Inorganic materials 0.000 description 28
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 27
- 238000001556 precipitation Methods 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 18
- 239000010410 layer Substances 0.000 description 18
- 229910052698 phosphorus Inorganic materials 0.000 description 18
- 239000011574 phosphorus Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 13
- 238000002161 passivation Methods 0.000 description 12
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 12
- 238000005259 measurement Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- -1 etc. Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052990 silicon hydride Inorganic materials 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- BDJXVNRFAQSMAA-UHFFFAOYSA-N quinhydrone Chemical compound OC1=CC=C(O)C=C1.O=C1C=CC(=O)C=C1 BDJXVNRFAQSMAA-UHFFFAOYSA-N 0.000 description 1
- 229940052881 quinhydrone Drugs 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
前記単結晶シリコン基板を800℃以上1200℃以下で熱処理する高温熱処理工程を含み、
該高温熱処理工程は、
前記単結晶シリコン基板を熱処理装置に装填する搬送ステップと、
前記単結晶シリコン基板を加熱する加熱ステップと、
前記単結晶シリコン基板を800℃以上1200℃以下の所定の温度に保つ保温ステップと、
前記単結晶シリコン基板を冷却する冷却ステップと
を有し、
前記高温熱処理工程において、前記搬送ステップ及び前記加熱ステップを通して前記単結晶シリコン基板の温度が400℃以上650℃以下となる時間を5分以内とすることを特徴とする太陽電池の製造方法を提供する。
前記単結晶シリコン太陽電池における前記単結晶シリコン基板のエレクトロルミネセンス又はフォトルミネセンスにおいて、スワールがないものであることを特徴とする太陽電池を提供する。
前記単結晶シリコン基板に含まれる酸素析出量が2ppma(JEIDA)以下であり、
前記単結晶シリコン太陽電池における前記単結晶シリコン基板のエレクトロルミネセンス又はフォトルミネセンスにおいて、スワールがないものであることを特徴とする太陽電池を提供する。
(初期格子間酸素濃度)−(残留格子間酸素濃度)=酸素濃度差ΔOi
=酸素析出量 (1)
まず、抵抗率1Ω・cm、初期格子間酸素濃度20ppmaのリンドープn型CZシリコン基板を100枚用意し、表面にテクスチャを形成した。
実施例1と同様の基板を100枚用意し、表面にテクスチャを形成した。これらの基板を石英ボートに移し、さらに温度600℃に保った石英炉のホットゾーンへ2000mm/分で搬送し、1分20秒で搬送を終えた。炉内温度が600℃で安定した後、そのまま5分間温度を一定に保ち、続いて、炉内温度を1000℃まで上昇させた。炉内温度が1000℃で安定した後、10分間にわたり臭化ホウ素をバブリングして炉内へ供給し、基板表面にボロンガラスを形成して、さらにその後、30分間にわたりボロンを拡散した。熱電対を設置したモニター基板でこの間の基板温度変化を計測したところ、temb.は9分30秒であった。
抵抗率1Ω・cm、格子間酸素濃度20ppmaのボロンドープp型CZシリコン基板を100枚用意し、表面にテクスチャ形成した。
実施例2と同様の基板を100枚用意し、表面にテクスチャ形成した。これらの基板を石英ボートに移し、さらに温度900℃に保った石英炉のホットゾーンへ300mm/分で搬送し、8分50秒で搬送を終えた。その後ヒーターの出力を調整し、搬送終了後約1分で炉内温度を900℃に保った。その後、10分間にわたりアルゴンガスでオキシ塩化リンをバブリングして炉内へ供給し、基板表面にリンガラスを形成し、さらにその後、30分間にわたりリンを拡散した。熱電対を設置したモニター基板でこの間の基板温度変化を計測したところ、temb.は約6分20秒であった。
実施例1と同様の基板を100枚用意し、表面にテクスチャを形成した。次にこれらの基板を酸素雰囲気で1000℃に保った石英炉のホットゾーンへ2000mm/分で搬送し、1分20秒で搬送を終えた。その後、ヒーターの出力を調整し、搬送終了後約2分で炉内温度を1000℃に180分間保ち、基板表面に厚さ約100nmの酸化シリコン膜を形成した。熱電対を設置したモニター基板でこの間の基板温度変化を計測したところ、temb.は1分40秒であった。
実施例1と同様の基板を100枚用意し、表面にテクスチャを形成した。次にこれらの基板を酸素雰囲気で600℃に保った石英炉のホットゾーンへ2000mm/分で搬送し、1分20秒で搬送を終えた。炉内温度が600℃で安定した後、そのまま5分間温度を一定に保ち、続いて、炉内温度を1000℃まで上昇させた。炉内温度が1000℃で安定した後、温度をそのまま180分間保ち、基板表面に厚さ約100nmの酸化シリコン膜を形成した。熱電対を設置したモニター基板でこの間の基板温度変化を計測したところ、temb.は9分20秒であった。
Claims (10)
- 単結晶シリコン基板を用いて、単結晶シリコン太陽電池を製造する太陽電池の製造方法であって、
石英炉を用いて前記単結晶シリコン基板を800℃以上1200℃以下で熱処理する高温熱処理工程を含み、
該高温熱処理工程は、
前記単結晶シリコン基板を熱処理装置に装填する搬送ステップと、
前記単結晶シリコン基板を加熱する加熱ステップと、
前記単結晶シリコン基板を800℃以上1200℃以下の所定の温度に保つ保温ステップと、
前記単結晶シリコン基板を冷却する冷却ステップと
を有し、
前記高温熱処理工程において、前記搬送ステップ及び前記加熱ステップを通して前記単結晶シリコン基板の温度が400℃以上650℃以下となる時間を5分以内とし、
前記高温熱処理工程をバッチ処理で行うことを特徴とする太陽電池の製造方法。 - 前記単結晶シリコン基板から前記太陽電池を製造するまでの間における、最初の前記高温熱処理工程において、前記単結晶シリコン基板の温度が400℃以上650℃以下となる時間を5分以内とすることを特徴とする請求項1に記載の太陽電池の製造方法。
- 前記高温熱処理工程を、不活性ガスを含む雰囲気で行うことを特徴とする請求項1又は請求項2に記載の太陽電池の製造方法。
- 前記不活性ガスを、窒素又はアルゴンとすることを特徴とする請求項3に記載の太陽電池の製造方法。
- 前記高温熱処理工程を、酸素又は水を含む雰囲気で行うことを特徴とする請求項1又は請求項2に記載の太陽電池の製造方法。
- 前記搬送ステップにおいて、前記単結晶シリコン基板を前記熱処理装置のホットゾーンへ10分以内に配置することを特徴とする請求項1から請求項5のいずれか1項に記載の太陽電池の製造方法。
- 前記単結晶シリコン基板をCZ単結晶シリコン基板とすることを特徴とする請求項1から請求項6のいずれか1項に記載の太陽電池の製造方法。
- 前記太陽電池の製造に用いる単結晶シリコン基板を、初期格子間酸素濃度が12ppma(JEIDA)以上のものとすることを特徴とする請求項1から請求項7のいずれか1項に記載の太陽電池の製造方法。
- 前記太陽電池の製造後に前記単結晶シリコン基板に含まれる酸素析出量を2ppma(JEIDA)以下とすることを特徴とする請求項8に記載の太陽電池の製造方法。
- 請求項1から請求項9のいずれか1項に記載の太陽電池の製造方法により製造された太陽電池であって、
前記単結晶シリコン太陽電池における前記単結晶シリコン基板のエレクトロルミネセンス又はフォトルミネセンスにおいて、スワールがないものであることを特徴とする太陽電池。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/004875 WO2018087794A1 (ja) | 2016-11-14 | 2016-11-14 | 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6254748B1 true JP6254748B1 (ja) | 2017-12-27 |
JPWO2018087794A1 JPWO2018087794A1 (ja) | 2018-11-15 |
Family
ID=60860175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017519702A Active JP6254748B1 (ja) | 2016-11-14 | 2016-11-14 | 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10692736B2 (ja) |
EP (1) | EP3346505A4 (ja) |
JP (1) | JP6254748B1 (ja) |
KR (1) | KR102626492B1 (ja) |
CN (1) | CN110121788B (ja) |
TW (2) | TWI701843B (ja) |
WO (1) | WO2018087794A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113555464A (zh) * | 2021-05-31 | 2021-10-26 | 天津爱旭太阳能科技有限公司 | 一种抑制载流子注入衰减的晶体硅太阳能电池制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6579086B2 (ja) * | 2016-11-15 | 2019-09-25 | 信越半導体株式会社 | デバイス形成方法 |
JP6677678B2 (ja) * | 2017-06-23 | 2020-04-08 | 信越化学工業株式会社 | 高効率太陽電池の製造方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08162446A (ja) * | 1994-11-30 | 1996-06-21 | Sharp Corp | 連続加熱炉及びこれを用いた太陽電池製造方法 |
JP2000100680A (ja) * | 1998-07-23 | 2000-04-07 | Canon Inc | 半導体基材の作製方法および半導体基材 |
WO2000055397A1 (fr) * | 1999-03-16 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue |
JP2000277403A (ja) * | 1999-03-26 | 2000-10-06 | Canon Inc | 半導体基体の作製方法 |
JP2002151560A (ja) * | 2000-11-07 | 2002-05-24 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの内部欠陥測定方法、半導体ウェーハの製造方法及び半導体ウェーハの内部欠陥測定装置 |
JP2003510800A (ja) * | 1999-09-23 | 2003-03-18 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 凝集自己格子間原子欠陥を含まないチョクラルスキーシリコンの製造方法 |
JP2003524874A (ja) * | 1998-09-02 | 2003-08-19 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 非酸素析出性のチョクラルスキーシリコンウエハ |
JP2005129602A (ja) * | 2003-10-22 | 2005-05-19 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法及び太陽電池セル |
WO2008004379A1 (fr) * | 2006-07-06 | 2008-01-10 | Shin-Etsu Handotai Co., Ltd. | Procédé de fabrication de tranche de silicium |
JP2009523694A (ja) * | 2006-01-20 | 2009-06-25 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 幾何学的多結晶成型シリコンの製造方法および装置および光電変換用多結晶成型シリコン本体 |
JP2010534179A (ja) * | 2007-07-20 | 2010-11-04 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 種結晶から鋳造シリコンを製造するための方法および装置 |
JP2013118223A (ja) * | 2011-12-01 | 2013-06-13 | Ulvac Japan Ltd | 結晶太陽電池の製造方法及び結晶太陽電池 |
JP2016046400A (ja) * | 2014-08-25 | 2016-04-04 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
JP2016093804A (ja) * | 2014-11-10 | 2016-05-26 | 国立大学法人信州大学 | 太陽電池モジュールから有価物を回収する方法及び回収するための処理装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
US6180497B1 (en) | 1998-07-23 | 2001-01-30 | Canon Kabushiki Kaisha | Method for producing semiconductor base members |
JP4232307B2 (ja) * | 1999-03-23 | 2009-03-04 | 東京エレクトロン株式会社 | バッチ式熱処理装置の運用方法 |
JP2002057351A (ja) * | 2000-08-15 | 2002-02-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法および太陽電池セル |
MY131022A (en) * | 2000-09-29 | 2007-07-31 | Samsung Electronics Co Ltd | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
US7189293B2 (en) * | 2001-06-28 | 2007-03-13 | Shin-Etsu Handotai Co., Ltd. | Method of producing annealed wafer and annealed wafer |
KR100423752B1 (ko) * | 2001-11-12 | 2004-03-22 | 주식회사 실트론 | 실리콘 반도체 웨이퍼 및 그 제조 방법 |
US6669775B2 (en) * | 2001-12-06 | 2003-12-30 | Seh America, Inc. | High resistivity silicon wafer produced by a controlled pull rate czochralski method |
US7699997B2 (en) * | 2003-10-03 | 2010-04-20 | Kobe Steel, Ltd. | Method of reclaiming silicon wafers |
US7714224B2 (en) * | 2004-09-03 | 2010-05-11 | Shin - Etsu Chemical Co., Ltd. | Photovoltaic power generation module and photovoltaic power generation system employing same |
KR20100036155A (ko) * | 2008-09-29 | 2010-04-07 | 매그나칩 반도체 유한회사 | 실리콘 웨이퍼 및 그의 제조방법 |
DE102008055515A1 (de) * | 2008-12-12 | 2010-07-15 | Schott Solar Ag | Verfahren zum Ausbilden eines Dotierstoffprofils |
CN102414830B (zh) * | 2009-04-27 | 2015-07-08 | 京瓷株式会社 | 太阳能电池元件、分割太阳能电池元件、太阳能电池模块及电子设备 |
US9105786B2 (en) * | 2011-04-18 | 2015-08-11 | Cisco Technology, Inc. | Thermal treatment of silicon wafers useful for photovoltaic applications |
JP5944131B2 (ja) * | 2011-09-27 | 2016-07-05 | 株式会社Screenホールディングス | 熱処理方法 |
US20150333193A1 (en) * | 2012-12-31 | 2015-11-19 | Memc Electronic Matrials S.P.A. | Indium-doped silicon wafer and solar cell using the same |
JP2015005621A (ja) * | 2013-06-20 | 2015-01-08 | 株式会社ノリタケカンパニーリミテド | 太陽電池用基板およびその製造方法 |
MY188961A (en) * | 2013-07-01 | 2022-01-14 | Solexel Inc | High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells |
US9716203B2 (en) * | 2013-09-12 | 2017-07-25 | The Texas A&M University System | Metal nanoparticles grown on an inner surface of open volume defects within a substrate |
JP5963999B1 (ja) | 2014-11-21 | 2016-08-03 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池 |
-
2016
- 2016-11-14 KR KR1020197012864A patent/KR102626492B1/ko active IP Right Grant
- 2016-11-14 US US15/755,968 patent/US10692736B2/en active Active
- 2016-11-14 WO PCT/JP2016/004875 patent/WO2018087794A1/ja active Application Filing
- 2016-11-14 CN CN201680090735.5A patent/CN110121788B/zh active Active
- 2016-11-14 EP EP16886814.9A patent/EP3346505A4/en active Pending
- 2016-11-14 JP JP2017519702A patent/JP6254748B1/ja active Active
-
2017
- 2017-03-14 TW TW108100193A patent/TWI701843B/zh active
- 2017-03-14 TW TW106108358A patent/TWI650877B/zh active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08162446A (ja) * | 1994-11-30 | 1996-06-21 | Sharp Corp | 連続加熱炉及びこれを用いた太陽電池製造方法 |
JP2000100680A (ja) * | 1998-07-23 | 2000-04-07 | Canon Inc | 半導体基材の作製方法および半導体基材 |
JP2003524874A (ja) * | 1998-09-02 | 2003-08-19 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 非酸素析出性のチョクラルスキーシリコンウエハ |
WO2000055397A1 (fr) * | 1999-03-16 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue |
JP2000277403A (ja) * | 1999-03-26 | 2000-10-06 | Canon Inc | 半導体基体の作製方法 |
JP2003510800A (ja) * | 1999-09-23 | 2003-03-18 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 凝集自己格子間原子欠陥を含まないチョクラルスキーシリコンの製造方法 |
JP2002151560A (ja) * | 2000-11-07 | 2002-05-24 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの内部欠陥測定方法、半導体ウェーハの製造方法及び半導体ウェーハの内部欠陥測定装置 |
JP2005129602A (ja) * | 2003-10-22 | 2005-05-19 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法及び太陽電池セル |
JP2009523694A (ja) * | 2006-01-20 | 2009-06-25 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 幾何学的多結晶成型シリコンの製造方法および装置および光電変換用多結晶成型シリコン本体 |
WO2008004379A1 (fr) * | 2006-07-06 | 2008-01-10 | Shin-Etsu Handotai Co., Ltd. | Procédé de fabrication de tranche de silicium |
JP2010534179A (ja) * | 2007-07-20 | 2010-11-04 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 種結晶から鋳造シリコンを製造するための方法および装置 |
JP2013118223A (ja) * | 2011-12-01 | 2013-06-13 | Ulvac Japan Ltd | 結晶太陽電池の製造方法及び結晶太陽電池 |
JP2016046400A (ja) * | 2014-08-25 | 2016-04-04 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
JP2016093804A (ja) * | 2014-11-10 | 2016-05-26 | 国立大学法人信州大学 | 太陽電池モジュールから有価物を回収する方法及び回収するための処理装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113555464A (zh) * | 2021-05-31 | 2021-10-26 | 天津爱旭太阳能科技有限公司 | 一种抑制载流子注入衰减的晶体硅太阳能电池制备方法 |
CN113555464B (zh) * | 2021-05-31 | 2023-03-10 | 天津爱旭太阳能科技有限公司 | 一种抑制载流子注入衰减的晶体硅太阳能电池制备方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20190082776A (ko) | 2019-07-10 |
US20180342402A1 (en) | 2018-11-29 |
WO2018087794A1 (ja) | 2018-05-17 |
CN110121788B (zh) | 2023-03-28 |
TWI650877B (zh) | 2019-02-11 |
TW201933622A (zh) | 2019-08-16 |
KR102626492B1 (ko) | 2024-01-17 |
CN110121788A (zh) | 2019-08-13 |
EP3346505A1 (en) | 2018-07-11 |
US10692736B2 (en) | 2020-06-23 |
JPWO2018087794A1 (ja) | 2018-11-15 |
EP3346505A4 (en) | 2019-01-16 |
TWI701843B (zh) | 2020-08-11 |
TW201830720A (zh) | 2018-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1997157B1 (en) | Method for fabricating a photovoltaic element with stabilised efficiency | |
JP6003791B2 (ja) | 太陽電池の製造方法 | |
JP6254748B1 (ja) | 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 | |
JP5338702B2 (ja) | 太陽電池の製造方法 | |
US20240136464A1 (en) | Method for manufacturing substrate for solar cell and substrate for solar cell | |
KR102420807B1 (ko) | 태양전지 및 태양전지의 제조 방법 | |
Schiele et al. | Etch-back of p+ structures for selective boron emitters in n-type c-Si solar cells | |
JP5830143B1 (ja) | 太陽電池セルの製造方法 | |
TW201535768A (zh) | 太陽電池的製造方法及經由製造方法所得太陽電池 | |
WO2012151410A1 (en) | Novel doping process for solar cell manufacture | |
JP6114108B2 (ja) | 太陽電池の製造方法 | |
US11222991B2 (en) | Solar cell and method for manufacturing the same | |
CN117613134A (zh) | 太阳能电池及其制造方法、太阳能电池模块和发电*** | |
JP2005166994A (ja) | 太陽電池の製造方法およびその方法により製造された太陽電池 | |
KR101816186B1 (ko) | 태양 전지의 제조 방법 | |
EP3471153B1 (en) | Solar cell and method for producing solar cell | |
JP2006041108A (ja) | 太陽電池の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171002 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171031 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171128 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171130 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6254748 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |