JP6231810B2 - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- JP6231810B2 JP6231810B2 JP2013166465A JP2013166465A JP6231810B2 JP 6231810 B2 JP6231810 B2 JP 6231810B2 JP 2013166465 A JP2013166465 A JP 2013166465A JP 2013166465 A JP2013166465 A JP 2013166465A JP 6231810 B2 JP6231810 B2 JP 6231810B2
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- 239000004065 semiconductor Substances 0.000 title claims description 178
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 claims description 44
- 239000013078 crystal Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000001039 wet etching Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 173
- 238000005530 etching Methods 0.000 description 59
- 239000000758 substrate Substances 0.000 description 20
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000012670 alkaline solution Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
Description
14 半導体構造層
20B、30B エッチング容易部
20 突起
21 凹凸構造面
L1、L1A 第1の直線群
L2、L2A 第2の直線群
L3、L3A 第3の直線群
GD 単位格子
Claims (5)
- 半導体構造層を含む半導体発光素子の製造方法であって、
前記半導体構造層の表面に、前記半導体構造層の前記表面の結晶方向に基づいて配置されたエッチング容易部を形成する工程と、
前記半導体構造層の前記表面にウェットエッチングを行い、前記半導体構造層の前記表面に、前記半導体構造層の結晶構造に由来する複数の突起からなる凹凸構造面を形成する工程と、を含み、
前記半導体構造層は六方晶系の結晶構造を有し、前記半導体構造層の前記表面はC - 面であり、
前記エッチング容易部は、前記半導体構造層の前記表面の結晶方向のうち、[11−20]方向に平行に且つ等間隔で配列された複数の直線からなる第1の直線群と、[2−1−10]方向に平行に且つ前記第1の直線群と同じ間隔で配列された複数の直線からなる第2の直線群と、[1−210]方向に平行に且つ前記第1及び第2の直線群と同じ間隔で配列された複数の直線からなる第3の直線群とによって前記表面を正三角形の格子からなるメッシュ状に区画したとき、前記正三角形の前記格子の中心の各々上に形成されることを特徴とする半導体発光素子の製造方法。 - 半導体構造層を含む半導体発光素子の製造方法であって、
前記半導体構造層の表面に、前記半導体構造層の前記表面の結晶方向に基づいて配置されたエッチング容易部を形成する工程と、
前記半導体構造層の前記表面にウェットエッチングを行い、前記半導体構造層の前記表面に、前記半導体構造層の結晶構造に由来する複数の突起からなる凹凸構造面を形成する工程と、を含み、
前記半導体構造層は六方晶系の結晶構造を有し、前記半導体構造層の前記表面はC-面であり、
前記エッチング容易部は、前記半導体構造層の前記表面の結晶方向のうち、[1−100]方向に平行に且つ等間隔で配列された複数の直線からなる第1の直線群と、[10−10]方向に平行に且つ前記第1の直線群と同じ間隔で配列された複数の直線からなる第2の直線群と、[0−110]方向に平行に且つ前記第1及び第2の直線群と同じ間隔で配列された複数の直線からなる第3の直線群によって前記表面を正三角形の格子からなるメッシュ状に区画したとき、前記正三角形の前記格子の中心の各々上に形成されることを特徴とする半導体発光素子の製造方法。 - 前記エッチング容易部は、前記エッチング容易部と隣接する前記エッチング容易部の各々とを直線で結んだハニカム形状のパターンを有するように形成されることを特徴とする請求項1又は2に記載の半導体発光素子の製造方法。
- 前記エッチング容易部を形成する工程は、
前記半導体構造層の前記表面に、前記エッチング容易部の形成位置に対応するマスク部を有するマスク層を形成する工程と、
前記マスク層から露出した前記半導体構造層の前記表面に、不活性ガスによるプラズマ照射を行う工程と、
前記マスク層を除去する工程と、を有することを特徴とする請求項1乃至3のいずれか1つに記載の半導体発光素子の製造方法。 - 前記エッチング容易部を形成する工程は、
前記半導体構造層の前記表面に、前記エッチング容易部の形成位置に対応する開口部を有する金属膜、絶縁膜又は樹脂膜を形成する工程を有することを特徴とする請求項1乃至3のいずれか1つに記載の半導体発光素子の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013166465A JP6231810B2 (ja) | 2013-08-09 | 2013-08-09 | 半導体発光素子及びその製造方法 |
CN201480044676.9A CN105453279B (zh) | 2013-08-09 | 2014-08-01 | 半导体发光元件及其制造方法 |
PCT/JP2014/070387 WO2015019969A1 (ja) | 2013-08-09 | 2014-08-01 | 半導体発光素子及びその製造方法 |
KR1020167003439A KR102275446B1 (ko) | 2013-08-09 | 2014-08-01 | 반도체 발광 소자 및 그 제조 방법 |
US14/910,998 US9601664B2 (en) | 2013-08-09 | 2014-08-01 | Semiconductor light-emitting element and method of manufacturing the same |
EP14834872.5A EP3032592A4 (en) | 2013-08-09 | 2014-08-01 | Semiconductor light-emitting element and production method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013166465A JP6231810B2 (ja) | 2013-08-09 | 2013-08-09 | 半導体発光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015035539A JP2015035539A (ja) | 2015-02-19 |
JP6231810B2 true JP6231810B2 (ja) | 2017-11-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013166465A Active JP6231810B2 (ja) | 2013-08-09 | 2013-08-09 | 半導体発光素子及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9601664B2 (ja) |
EP (1) | EP3032592A4 (ja) |
JP (1) | JP6231810B2 (ja) |
KR (1) | KR102275446B1 (ja) |
CN (1) | CN105453279B (ja) |
WO (1) | WO2015019969A1 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US7161188B2 (en) | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
GB2418532A (en) * | 2004-09-28 | 2006-03-29 | Arima Optoelectronic | Textured light emitting diode structure with enhanced fill factor |
US7897420B2 (en) * | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
JP5493252B2 (ja) * | 2007-06-28 | 2014-05-14 | 日亜化学工業株式会社 | 半導体発光素子 |
US8080480B2 (en) * | 2007-09-28 | 2011-12-20 | Samsung Led Co., Ltd. | Method of forming fine patterns and manufacturing semiconductor light emitting device using the same |
US8390010B2 (en) | 2010-03-25 | 2013-03-05 | Micron Technology, Inc. | Solid state lighting devices with cellular arrays and associated methods of manufacturing |
US9287452B2 (en) * | 2010-08-09 | 2016-03-15 | Micron Technology, Inc. | Solid state lighting devices with dielectric insulation and methods of manufacturing |
TWI422068B (zh) * | 2011-02-18 | 2014-01-01 | Univ Nat Cheng Kung | 粗化方法及具粗化表面之發光二極體製備方法 |
JP5679869B2 (ja) * | 2011-03-07 | 2015-03-04 | スタンレー電気株式会社 | 光半導体素子の製造方法 |
-
2013
- 2013-08-09 JP JP2013166465A patent/JP6231810B2/ja active Active
-
2014
- 2014-08-01 CN CN201480044676.9A patent/CN105453279B/zh active Active
- 2014-08-01 EP EP14834872.5A patent/EP3032592A4/en not_active Withdrawn
- 2014-08-01 US US14/910,998 patent/US9601664B2/en active Active
- 2014-08-01 KR KR1020167003439A patent/KR102275446B1/ko active IP Right Grant
- 2014-08-01 WO PCT/JP2014/070387 patent/WO2015019969A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20160042423A (ko) | 2016-04-19 |
EP3032592A1 (en) | 2016-06-15 |
CN105453279B (zh) | 2018-07-06 |
CN105453279A (zh) | 2016-03-30 |
US9601664B2 (en) | 2017-03-21 |
KR102275446B1 (ko) | 2021-07-09 |
EP3032592A4 (en) | 2017-01-18 |
US20160204309A1 (en) | 2016-07-14 |
WO2015019969A1 (ja) | 2015-02-12 |
JP2015035539A (ja) | 2015-02-19 |
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