JP6227223B2 - 半導体装置、及び半導体装置の製造方法 - Google Patents
半導体装置、及び半導体装置の製造方法 Download PDFInfo
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- JP6227223B2 JP6227223B2 JP2012082736A JP2012082736A JP6227223B2 JP 6227223 B2 JP6227223 B2 JP 6227223B2 JP 2012082736 A JP2012082736 A JP 2012082736A JP 2012082736 A JP2012082736 A JP 2012082736A JP 6227223 B2 JP6227223 B2 JP 6227223B2
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Description
11 回路基板
12 MMICチップ
12a チップパッド
13a〜13l、13p〜13u 伝送線路(通常ボンディング)
13m〜13o、13v〜13x 伝送線路(リバースボンディング)
15、16 導電接着剤
17 レジスト(ダム)
20 ボンディング装置
100 半導体装置
101 回路基板
102 MMICチップ
121 受信用MMICチップ
122 送信用MMICチップ
141 チップ側ワイヤボンディングパッド
142 伝送線路側ワイヤボンディングパッド
B1 ボールボンド
B2 スタッドバンプ(BSOB)
G1、G2、G3、G4、G5、G6 通常ボンディング領域
R1、R2 リバースボンディング領域
W1〜W15、W21〜W29、W31、W32、W41、W42 ワイヤ
W101、W102 ワイヤ
Claims (6)
- 基板上のチップと、
前記基板上に形成され、前記チップに接続された伝送線路と、
前記チップの複数の端子のうち、ワイヤ長が伝送速度または伝送損失への影響が比較的小さい端子への一端のボンディング後に、前記伝送線路の端子に他端をボンディングされた第1のワイヤと、
前記伝送線路の端子への一端のボンディング後に、前記チップの複数の端子のうち、ワイヤ長が伝送速度または伝送損失への影響が比較的大きい端子上にBSOB(Bond Stitch On Ball)によって形成されたバンプに他端をボンディングされ、前記第1のワイヤよりも長さが短い第2のワイヤと
を有することを特徴とする半導体装置。 - 前記チップは、
上面における周縁部に沿って前記複数の端子が一列に設けられ、
一列に設けられる前記複数の端子には、
ワイヤ長が伝送速度または伝送損失への影響が比較的小さい端子と、ワイヤ長が伝送速度または伝送損失への影響が比較的大きい端子とが含まれる
ことを特徴とする請求項1に記載の半導体装置。 - 前記第2のワイヤがボンディングされる前記伝送線路の端子は、
前記第1のワイヤがボンディングされる前記伝送線路の端子よりも前記チップに近い位置に設けられる
ことを特徴とする請求項2に記載の半導体装置。 - 前記第2のワイヤが接続される端子は、アンテナ導波管に接続される端子であることを特徴とする請求項1〜3のいずれか一つ記載の半導体装置。
- 前記基板と前記チップとの間に、前記チップを前記基板に固定するための導電接着剤を更に有し、
該導電接着剤が、前記チップの面積からはみ出さない様に接着されることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。 - 半導体製造装置が、
チップを接続するための伝送線路を基板上に形成する工程と、
前記基板上に前記チップを設置する工程と、
第1のワイヤの一端を前記チップの複数の端子のうち、ワイヤ長が伝送速度または伝送損失への影響が比較的小さい端子にボンディングした後に、前記第1のワイヤの他端を前記伝送線路の端子にボンディングする第1のボンディングと、前記第1のワイヤよりも長さが短い第2のワイヤの一端を前記伝送線路の端子にボンディングした後に、前記第2のワイヤの他端を前記チップの複数の端子のうち、ワイヤ長が伝送速度または伝送損失への影響が比較的大きい端子上にBSOB(Bond Stitch On Ball)によって形成したバンプにボンディングする第2のボンディングとの内、何れかのボンディングを、前記第1のワイヤまたは前記第2のワイヤの接続される端子に応じて、選択する工程と、
選択されたボンディングを前記端子毎に実行する工程と
を含むことを特徴とする半導体装置の製造方法。
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