JP6208935B2 - connector - Google Patents

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JP6208935B2
JP6208935B2 JP2012240799A JP2012240799A JP6208935B2 JP 6208935 B2 JP6208935 B2 JP 6208935B2 JP 2012240799 A JP2012240799 A JP 2012240799A JP 2012240799 A JP2012240799 A JP 2012240799A JP 6208935 B2 JP6208935 B2 JP 6208935B2
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base material
hole
conductive
substrate
plating
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JP2014093121A5 (en
JP2014093121A (en
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橋本　信一
信一 橋本
文章 宇崎
文章 宇崎
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Tyco Electronics Japan GK
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Tyco Electronics Japan GK
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Priority to JP2012240799A priority Critical patent/JP6208935B2/en
Priority to TW102215717U priority patent/TWM468796U/en
Priority to CN201380057490.2A priority patent/CN104769781A/en
Priority to PCT/JP2013/005909 priority patent/WO2014068848A1/en
Publication of JP2014093121A publication Critical patent/JP2014093121A/en
Publication of JP2014093121A5 publication Critical patent/JP2014093121A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R9/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, e.g. terminal strips or terminal blocks; Terminals or binding posts mounted upon a base or in a case; Bases therefor
    • H01R9/16—Fastening of connecting parts to base or case; Insulating connecting parts from base or case
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/55—Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/57—Fixed connections for rigid printed circuits or like structures characterised by the terminals surface mounting terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/72—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures
    • H01R12/73—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures connecting to other rigid printed circuits or like structures

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Connections Arranged To Contact A Plurality Of Conductors (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Connector Housings Or Holding Contact Members (AREA)

Description

本発明は、隔壁で区画される気密チャンバの内側及び外側を電気的に相互接続するために用いられ、隔壁に形成された、気密チャンバの内部と外部とを貫通する開口部を塞ぐコネクタに関する。   The present invention relates to a connector that is used for electrically interconnecting the inside and outside of an airtight chamber defined by a partition wall and blocks an opening formed in the partition wall that penetrates the inside and the outside of the airtight chamber.

従来より、隔壁で区画される気密チャンバの内側及び外側を電気的に相互接続する要請がある。例えば、集積回路を搭載した半導体チッププロセスにおいて内部を真空に近い状態にまで減圧することが可能な真空チャンバを用い、この真空チャンバの内部及び外部を電気的に接続することが行われる。また、隔壁で区画される気密チャンバの内部をＨｅガスのような分子量の少ないガスで充満させて減圧することも行われている。このような圧力が調整された気密チャンバの内部と外部との電気的接続に際しては、チャンバ内部の気密性を保持すると同時に、チャンバの内部と外部との確実な電気的接続性が求められる。
従来のこの種の電気接続構造として、例えば、図１０に示す特許文献１に記載の電気接続構造が知られている。図１０は、従来例の、隔壁で区画される、圧力が調整された気密チャンバの内側及び外側を電気的に相互接続する電気接続構造の模式図である。 Conventionally, there is a need to electrically interconnect the inside and outside of an airtight chamber partitioned by a partition wall. For example, in a semiconductor chip process in which an integrated circuit is mounted, a vacuum chamber capable of reducing the pressure to near vacuum is used, and the inside and outside of the vacuum chamber are electrically connected. In addition, the inside of an airtight chamber partitioned by a partition wall is filled with a gas having a low molecular weight such as He gas to reduce the pressure. In the electrical connection between the inside and outside of the hermetic chamber whose pressure is adjusted, the airtightness inside the chamber is maintained, and at the same time, reliable electrical connectivity between the inside and outside of the chamber is required.
As a conventional electrical connection structure of this type, for example, an electrical connection structure described in Patent Document 1 shown in FIG. 10 is known. FIG. 10 is a schematic diagram of an electrical connection structure for electrically interconnecting the inside and the outside of a hermetic chamber, which is partitioned by a partition wall and adjusted in pressure, according to a conventional example.

図１０に示す電気接続構造１０１は、隔壁（図示せず）で区画され内部の圧力が調整されるチャンバ（図示せず）の内部Ａ側及び外部Ｂ側を電気的に相互接続するものである。
図１０に示す電気接続構造１０１を使用するチャンバにおいて、隔壁には、チャンバの内部Ａ側と外部Ｂ側とを貫通する開口部（図示せず）が形成されている。そして、この開口部は、コネクタ１１０によって塞がれている。 An electrical connection structure 101 shown in FIG. 10 electrically connects the inside A side and the outside B side of a chamber (not shown) that is partitioned by a partition wall (not shown) and whose internal pressure is adjusted. .
In the chamber using the electrical connection structure 101 shown in FIG. 10, the partition wall has an opening (not shown) penetrating the inside A side and the outside B side of the chamber. The opening is closed by the connector 110.

ここで、コネクタ１１０の基材には、複数のバイアホール１１２が設けられている。各バイアホール１１２は、基材の内表面と外表面との間を貫通するスルーホールの内部に導電体を充填してなる。スルーホールは、基材の内表面と外表面との間を貫通する貫通孔の内周面に導電めっきを施して形成される。また、コネクタ１１０の内表面及び外表面には、バイアホール１１２の導電体によって相互接続された１対の導電パッド１１３ａ，１１３ｂが設けられている。   Here, the base material of the connector 110 is provided with a plurality of via holes 112. Each via hole 112 is formed by filling a through hole penetrating between an inner surface and an outer surface of a base material with a conductor. The through hole is formed by conducting conductive plating on the inner peripheral surface of the through hole that passes between the inner surface and the outer surface of the substrate. In addition, a pair of conductive pads 113 a and 113 b interconnected by the conductors of the via holes 112 are provided on the inner surface and the outer surface of the connector 110.

そして、コネクタ１１０に対して内側に複数の第１コネクタ１２０Ａが配置されると共に、コネクタ１１０に対して外側に複数の第２コネクタ１２０Ｂが配置されている。
各第１コネクタ１２０Ａは、コネクタ１１０に対して直交する方向に延びるように配置され、コネクタ１１０の長手方向（図１０における上下方向）に沿って配置されている。また、各第２コネクタ１２０Ｂは、コネクタ１１０に対して直交する方向に延びるように配置され、第１コネクタ１２０Ａと対向するようにコネクタ１１０の長手方向に沿って配置されている。 A plurality of first connectors 120 </ b> A are disposed inside the connector 110, and a plurality of second connectors 120 </ b> B are disposed outside the connector 110.
Each first connector 120A is disposed so as to extend in a direction orthogonal to the connector 110, and is disposed along the longitudinal direction (vertical direction in FIG. 10) of the connector 110. Each of the second connectors 120B is disposed so as to extend in a direction orthogonal to the connector 110, and is disposed along the longitudinal direction of the connector 110 so as to face the first connector 120A.

ここで、各第１コネクタ１２０Ａは、コネクタ１１０に対して直交する方向に延びるように配置された第２基板１２１と、第２基板１２１の幅方向（図１０において紙面に対して直交する方向）に沿って所定ピッチで配列された複数のコンタクト１２３とを備えている。第２基板１２１の表面（図１０における上面）には、第２基板１２１の幅方向に沿って所定ピッチで複数の導電パターン１２４が設けられている。各コンタクト１２３は、各導電パターン１２４の一端側に接続される。また、各導電パターン１２４の他端側には、信号線１２２が接続されている。また、各第２コネクタ１２０Ｂは、各第１コネクタ１２０Ａと同様の構成を有する。   Here, each of the first connectors 120A is arranged so as to extend in a direction orthogonal to the connector 110, and the width direction of the second substrate 121 (direction orthogonal to the paper surface in FIG. 10). And a plurality of contacts 123 arranged at a predetermined pitch along the line. On the surface of the second substrate 121 (upper surface in FIG. 10), a plurality of conductive patterns 124 are provided at a predetermined pitch along the width direction of the second substrate 121. Each contact 123 is connected to one end side of each conductive pattern 124. A signal line 122 is connected to the other end side of each conductive pattern 124. Each second connector 120B has the same configuration as each first connector 120A.

このような構成を有する電気接続構造１０１において、第１コネクタ１２０Ａを図１０における矢印Ｆ方向に前進させ、コンタクト１２３をコネクタ１１０の内表面に設けられた導電パッド１１３ａに接触させる。一方、第２コネクタ１２０Ｂを図１０における矢印Ｆ’方向に前進させ、コンタクト１２３をコネクタ１１０の外表面に設けられた導電パッド１１３ｂに接触させる。これにより、チャンバ内部Ａ側及び外部Ｂ側の信号線１２２、１２２は、チャンバ内部Ａ側の導電パターン１２４、コンタクト１２３、コネクタ１１０の内表面の導電パッド１１３ａ、バイアホール１１２、コネクタ１１０の外表面の導電パッド１１３ｂ、コンタクト１２３、チャンバ外部Ｂ側の導電パターン１２４を経由して電気的に接続されるのである。   In the electrical connection structure 101 having such a configuration, the first connector 120 </ b> A is advanced in the direction of arrow F in FIG. 10, and the contact 123 is brought into contact with the conductive pad 113 a provided on the inner surface of the connector 110. On the other hand, the second connector 120B is advanced in the direction of the arrow F ′ in FIG. 10, and the contact 123 is brought into contact with the conductive pad 113 b provided on the outer surface of the connector 110. Accordingly, the signal lines 122 and 122 on the chamber inner side A and the outer side B are connected to the conductive pattern 124 on the chamber inner side A, the contact 123, the conductive pad 113a on the inner surface of the connector 110, the via hole 112, and the outer surface of the connector 110. The conductive pads 113b, the contacts 123, and the conductive pattern 124 on the chamber outside B side are electrically connected.

また、図示はしないが、電極ピンとパッケージとの間の気密性を確保した気密端子として、例えば、特許文献２に記載されたものが知られている。
この特許文献２に記載された気密端子においては、パッケージに形成されたスルーホールの内周面に導電めっきが形成されている。また、スルーホール内に配置される電極ピンには、スルーホールの開口部を覆う蓋が形成されている。そして、この蓋が開口部を塞ぐように導電めっきに接合される。また、電極ピンが配置されているスルーホール内の電極ピンと導電めっきとの間の隙間をはんだで充填し封止するようにしている。 Moreover, although not illustrated, what was described in patent document 2 is known as an airtight terminal which ensured the airtightness between an electrode pin and a package, for example.
In the hermetic terminal described in Patent Document 2, conductive plating is formed on the inner peripheral surface of the through hole formed in the package. In addition, a lid that covers the opening of the through hole is formed on the electrode pin disposed in the through hole. And this lid | cover is joined to electroconductive plating so that an opening part may be plugged up. In addition, the gap between the electrode pin in the through hole where the electrode pin is disposed and the conductive plating is filled with solder and sealed.

特開２００４−３４９０７３号公報JP 2004-349073 A 特開平１１−４０２２３号公報Japanese Patent Laid-Open No. 11-40223

しかしながら、この図１０に示した特許文献１に記載の電気接続構造１０１及び特許文献２に記載の気密端子にあっては、以下の問題点があった。
即ち、図１０に示す特許文献１に記載の電気接続構造１０１の場合、コネクタ１１０の基材にバイアホール１１２を形成するに際して、基材に形成されたスルーホールの内部に導電体を充填する工程が必要となる。この導電体の充填工程は、基材にスルーホールを形成する通常の工程に対して付加的な工程であると共に、導電体の充填に際して特別な設備も必要となり、生産性の悪いものであった。 However, the electrical connection structure 101 described in Patent Document 1 and the airtight terminal described in Patent Document 2 shown in FIG. 10 have the following problems.
That is, in the case of the electrical connection structure 101 described in Patent Document 1 shown in FIG. 10, when the via hole 112 is formed in the base material of the connector 110, a step of filling the conductor into the through hole formed in the base material. Is required. This conductor filling step is an additional step to the normal step of forming a through hole in the base material, and also requires special equipment for filling the conductor, resulting in poor productivity. .

また、特許文献２に記載の気密端子の場合にも、内周面に導電めっきが形成されたスルーホール内に、付加的工程であるはんだを充填する工程が必要であった。
従って、本発明はこれら問題点を解決するためになされたものであり、その目的は、基材に形成されたスルーホールの内部にはんだ等の導電体を充填しなくてもチャンバ内部の気密性を保持すると同時に、チャンバの内部と外部との確実な電気的接続性が得られるコネクタを提供することにある。 Further, in the case of the hermetic terminal described in Patent Document 2, a step of filling solder as an additional step into the through hole in which the conductive plating is formed on the inner peripheral surface is necessary.
Therefore, the present invention has been made to solve these problems, and its purpose is to achieve airtightness inside the chamber without filling a through hole formed in the base material with a conductor such as solder. It is another object of the present invention to provide a connector that can ensure reliable electrical connection between the inside and the outside of a chamber.

上記目的を達成するために、本発明のうちある形態に係るコネクタは、隔壁で区画される気密チャンバの内側及び外側を電気的に相互接続するために用いられ、隔壁に形成された、気密チャンバの内部と外部とを貫通する開口部を塞ぐコネクタであって、前記開口部を塞ぐ多層基板を備え、該多層基板は、平板状の第１基材と、該第１基材の内表面側に配置されて前記開口部を塞ぐ平板状の第２基材と、前記第１基材の外表面側に配置される平板状の第３基材とを備え、前記第１基材は、該第１基材の内表面及び外表面との間を貫通する貫通孔の内周面に前記内表面と外表面との間を延びる第１導電めっきを施してなる第１スルーホールを有するとともに、前記第１基材の内表面に設けられた、前記第１導電めっきの内表面側に接続された第１導電層と、前記第１基材の外表面に設けられた、前記第１導電めっきの外表面側に接続された第２導電層とを備え、前記第２基材は、該第２基材の内表面及び外表面との間を貫通する貫通孔の内周面に前記第２基材の内表面と外表面との間を延びる第２導電めっきを施してなる第２スルーホールを有するとともに、前記第２基材の内表面に設けられた、前記第２導電めっきの内表面側に接続された第３導電層を備え、前記第３基材は、該第３基材の内表面及び外表面との間を貫通する貫通孔の内周面に前記第３基材の内表面と外表面との間を延びる第３導電めっきを施してなる第３スルーホールを有するとともに、前記第３基材の外表面に設けられた、前記第３導電めっきの外表面側に接続された第４導電層を備え、前記第２基材の外表面を前記第１基材の内表面に接するように配置して前記第２基材によって前記第１スルーホールの内表面側を塞ぐとともに、前記第１導電層と前記第２導電めっきの外表面側とを接続し、前記第３基材の内表面を前記第１基材の外表面に接するように配置して前記第３基材によって前記第１スルーホールの外表面側を塞ぐとともに、前記第２導電層と前記第３導電めっきの内表面側とを接続し、前記第１基材、前記第２基材及び前記第３基材は、ガラス入りエポキシ製であることを特徴としている。
また、このコネクタにおいて、前記第１スルーホールが、樹脂で充填されていることが好ましい。 To achieve the above object, a connector according to an aspect of the present invention is used to electrically interconnect the inside and outside of an airtight chamber partitioned by a partition, and is formed in the partition. A connector for closing an opening penetrating the inside and the outside of the housing, comprising a multilayer substrate for closing the opening, the multilayer substrate comprising a flat plate-like first base material and an inner surface side of the first base material A flat plate-like second base material that is disposed on the opening and closes the opening, and a flat plate-like third base material that is arranged on the outer surface side of the first base material, While having a first through hole formed by applying a first conductive plating extending between the inner surface and the outer surface on the inner peripheral surface of the through hole penetrating between the inner surface and the outer surface of the first substrate, Provided on the inner surface of the first base material, connected to the inner surface side of the first conductive plating. A conductive layer; and a second conductive layer provided on an outer surface of the first base material and connected to an outer surface side of the first conductive plating, wherein the second base material is the second base material. And having a second through hole formed by applying second conductive plating extending between the inner surface and the outer surface of the second base material on the inner peripheral surface of the through hole penetrating between the inner surface and the outer surface of the second base material A third conductive layer provided on the inner surface of the second base material and connected to the inner surface side of the second conductive plating, wherein the third base material includes an inner surface of the third base material and A third through hole formed by applying third conductive plating extending between the inner surface and the outer surface of the third base material on the inner peripheral surface of the through hole penetrating between the outer surface and the third surface; A fourth conductive layer provided on the outer surface of the base material and connected to the outer surface side of the third conductive plating; and an outer surface of the second base material The inner surface side of the first through hole is closed by the second base material so as to be in contact with the inner surface of the first base material, and the outer surface side of the first conductive layer and the second conductive plating Are connected so that the inner surface of the third base material is in contact with the outer surface of the first base material, the outer surface side of the first through hole is closed by the third base material, and the second A conductive layer is connected to the inner surface side of the third conductive plating, and the first base material, the second base material, and the third base material are made of glass-filled epoxy .
In this connector, it is preferable that the first through hole is filled with a resin.

本発明に係るコネクタによれば、気密チャンバの内部と外部とを貫通する開口部を塞ぐ多層基板を備え、この多層基板において、第２基材の外表面を第１基材の内表面に接するように配置して第２基材によって、第１基材に形成された第１スルーホールの内表面側を塞ぎ、かつ、第３基材の内表面を第１基材の外表面に接するように配置して第３基材によって第１スルーホールの外表面側を塞ぐので、多層基板を構成する第２基材及び第３基材により、第１基板の第１スルーホールの内表面側及び外表面側を塞ぐことができ、チャンバ内部の気密性を保持することができる。   The connector according to the present invention includes a multilayer board that closes an opening that penetrates the inside and the outside of the hermetic chamber, and in this multilayer board, the outer surface of the second base is in contact with the inner surface of the first base. The inner surface side of the first through hole formed in the first substrate is closed by the second substrate, and the inner surface of the third substrate is in contact with the outer surface of the first substrate. Since the outer surface side of the first through hole is closed by the third base material, the inner surface side of the first through hole of the first substrate and the second base material and the third base material constituting the multilayer substrate The outer surface side can be closed, and the airtightness inside the chamber can be maintained.

また、第１基材が、第１基材の内表面に設けられた、第１スルーホールの第１導電めっきの内表面側に接続された第１導電層と、第１基材の外表面に設けられた、第１導電めっきの外表面側に接続された第２導電層とを備え、第２基材が、第２基材の内表面に設けられた、第２スルーホールの第２導電めっきの内表面側に接続された第３導電層を備え、第３基材が、第３基材の外表面に設けられた、第３スルーホールの第３導電めっきの外表面側に接続された第４導電層を備え、第１導電層と第２導電めっきの外表面側とを接続し、第２導電層と第３導電めっきの内表面側とを接続したので、多層基板において、内表面側から外表面側に向けて、第３導電層、第２導電めっき、第１導電層、第１導電めっき、第２導電層、第３導電めっき、及び第４導電層の順に接続される。このため、チャンバの内部と外部との確実な電気的接続性を得ることができる。   Moreover, the 1st base material was provided in the inner surface of the 1st base material, the 1st conductive layer connected to the inner surface side of the 1st conductive plating of the 1st through hole, and the outer surface of the 1st base material And a second conductive layer connected to the outer surface side of the first conductive plating, and a second base material provided on the inner surface of the second base material. Provided with a third conductive layer connected to the inner surface side of the conductive plating, the third base material connected to the outer surface side of the third conductive plating of the third through hole provided on the outer surface of the third base material Since the fourth conductive layer is provided, the first conductive layer is connected to the outer surface side of the second conductive plating, and the second conductive layer is connected to the inner surface side of the third conductive plating. From the inner surface side to the outer surface side, the third conductive layer, the second conductive plating, the first conductive layer, the first conductive plating, the second conductive layer, the third conductive plating, and the like. It is connected in order of the fourth conductive layer. For this reason, reliable electrical connectivity between the inside and outside of the chamber can be obtained.

これにより、基材に形成されたスルーホールの内部にはんだ等の導電体を充填しなくてもチャンバ内部の気密性を保持すると同時に、チャンバの内部と外部との確実な電気的接続性を得ることができる。従って、基材にスルーホールを形成する通常の工程に対して付加的な工程である半田等の導電体の充填工程が不要となり、コネクタの生産性を向上させることができる。   As a result, airtightness inside the chamber can be maintained without filling a through-hole formed in the base material with a conductor such as solder, and at the same time, reliable electrical connection between the inside and outside of the chamber is obtained. be able to. Therefore, a step of filling a conductor such as solder, which is an additional step to the normal step of forming a through hole in the base material, is not required, and the productivity of the connector can be improved.

本発明に係るコネクタを用いた電気接続構造の概略模式図である。It is a schematic diagram of the electrical connection structure using the connector which concerns on this invention. 図１に示すコネクタを用いた電気接続構造において、コネクタの周辺を詳細に示す断面図である。FIG. 2 is a cross-sectional view showing in detail the periphery of the connector in the electrical connection structure using the connector shown in FIG. 1. 図１に示すコネクタの平面図である。It is a top view of the connector shown in FIG. 図３における４−４線に沿う断面図である。It is sectional drawing which follows the 4-4 line in FIG. 図１に示すコネクタに用いられる多層基板の平面図である。It is a top view of the multilayer substrate used for the connector shown in FIG. 図５における６−６線に沿う断面図である。It is sectional drawing which follows the 6-6 line in FIG. 多層基板の第１変形例の主要部の断面図である。It is sectional drawing of the principal part of the 1st modification of a multilayer substrate. 多層基板の第２変形例の主要部の断面図である。It is sectional drawing of the principal part of the 2nd modification of a multilayer substrate. 多層基板の第３変形例の主要部の断面図である。It is sectional drawing of the principal part of the 3rd modification of a multilayer substrate. 従来例の、隔壁で区画される、圧力が調整された気密チャンバの内側及び外側を電気的に相互接続する電気接続構造の模式図である。It is a schematic diagram of the electrical connection structure which electrically interconnects the inner side and the outer side of the airtight chamber in which the pressure was adjusted divided by the partition of a prior art example.

以下、本発明に係る電気接続構造の実施形態を図面を参照して説明する。
図１に示す電気接続構造において、隔壁９０で区画され内部が気密に保たれる気密チャンバＣの内側及び外側をコネクタ１を用いて電気的に相互接続する。気密チャンバＣの内部は、真空に近い状態であってもよいし、Ｈｅガスのような分子量の少ないガスで充満させて外気圧よりも低い圧力の状態に減圧してもよい。また、気密チャンバＣの内部は、外気圧よりも高い圧力の状態であってもよい。 Embodiments of an electrical connection structure according to the present invention will be described below with reference to the drawings.
In the electrical connection structure shown in FIG. 1, the inside and outside of an airtight chamber C that is partitioned by a partition wall 90 and is kept airtight inside are electrically interconnected using a connector 1. The inside of the hermetic chamber C may be in a state close to a vacuum, or may be filled with a gas having a low molecular weight such as He gas to reduce the pressure to a state lower than the external pressure. Further, the inside of the airtight chamber C may be in a state of a pressure higher than the external pressure.

ここで、隔壁９０には、図１に示すように、気密チャンバＣの内部と外部とを貫通する開口部９１が形成されている。また、隔壁９０には、隔壁９０の気密チャンバＣ内にガスを注入する（又は気密チャンバＣからガスを排出する）ためのガス注入・排出用開口部９２が形成されている。この隔壁９０は、金属製である。
そして、隔壁９０の開口部９１は、図１及び図２に示すように、コネクタ１によって塞がれる。 Here, as shown in FIG. 1, the partition wall 90 is formed with an opening 91 that penetrates the inside and the outside of the hermetic chamber C. In addition, the partition wall 90 is formed with a gas injection / discharge opening 92 for injecting gas into the airtight chamber C of the partition wall 90 (or exhausting gas from the airtight chamber C) . The partition wall 90 is made of metal.
Then, the opening 91 of the partition wall 90 is closed by the connector 1 as shown in FIGS. 1 and 2.

コネクタ１は、図２に示すように、開口部９１を塞ぐ多層基板（本実施形態においては、４層基板）１０を備えている。
この多層基板１０は、図２乃至図６によく示すように、平板状の第１基材２０と、第１基材２０の内表面２０ａ側に配置されて開口部９１を塞ぐ平板状の第２基材３０と、第１基材２０の外表面２０ｂ側に配置される平板状の第３基材４０とを備えている。 As shown in FIG. 2, the connector 1 includes a multilayer substrate (a four-layer substrate in this embodiment) 10 that closes the opening 91.
As shown in FIGS. 2 to 6, the multilayer substrate 10 includes a flat plate-like first base material 20 and a flat plate-like first base material 20 disposed on the inner surface 20 a side of the first base material 20 to block the opening 91. 2 base material 30 and the flat 3rd base material 40 arrange | positioned at the outer surface 20b side of the 1st base material 20 are provided.

ここで、第１基材２０は、図５に示すように、幅方向（図５における左右方向）及び長手方向（図５における上下方向）に延びる略矩形形状の平板状部材である。なお、第１基材２０は円形であってもよい。第１基材２０は、図２乃至図６に示すように、気密チャンバＣの内部側に位置する内表面２０ａと外表面２０ｂとを有する。そして、第１基材２０の内表面２０ａには、第１基材２０の外周に沿って連続的に無端状に延びる所定幅の切欠２０ｃが形成されている。第１基材２０は、例えば、ガラス入りエポキシ製である。   Here, as shown in FIG. 5, the first base material 20 is a substantially rectangular flat plate-like member extending in the width direction (left-right direction in FIG. 5) and the longitudinal direction (up-down direction in FIG. 5). The first base material 20 may be circular. As shown in FIGS. 2 to 6, the first base material 20 has an inner surface 20 a and an outer surface 20 b located on the inner side of the airtight chamber C. The inner surface 20a of the first base material 20 is formed with a notch 20c having a predetermined width that extends continuously and endlessly along the outer periphery of the first base material 20. The first base material 20 is made of glass-filled epoxy, for example.

また、第１基材２０には、図６に示すように、第１基材２０の内表面２０ａ及び外表面２０ｂ間を電気的に相互接続する複数の第１スルーホール２３が形成されている。複数の第１スルーホール２３は、第１基材２０の幅方向において２列状に形成されている。図示はしないが、各列の第１スルーホール２３は、前後方向に沿って所定ピッチで形成されている。そして、各第１スルーホール２３は、第１基材２０の内表面２０ａと外表面２０ｂとの間を貫通する貫通孔２１の内周面に、第１基材２０の内表面２０ａと外表面２０ｂとの間を延びる環状の第１導電めっき２２を施してなる。第１導電めっき２２は、例えば、すずめっきあるいは金めっきで形成される。また、環状の第１導電めっき２２の中央の空間には、樹脂２６が充填されている。この空間には、樹脂２６ではなく、導電体を充填してもよいし、また、図７に示すように、空間２７に何も充填しなくてもよい。そして、第１基材２０の内表面２０ａには、第１導電めっき２２の内表面２０ａ側に接続された複数の第１導電層２４が設けられている。各第１導電層２４は、第１導電めっき２２の周囲を囲む部分と、この部分から幅方向外側に延びる部分とを含むように形成されている。また、第１基材２０の外表面２０ｂには、第１導電めっき２２の外表面２０ｂ側に接続された複数の第２導電層２５が設けられている。各第２導電層２５も、第１導電めっき２２の周囲を囲む部分と、この部分から幅方向外側に延びる部分とを含むように形成されている。   Further, as shown in FIG. 6, a plurality of first through holes 23 that electrically interconnect the inner surface 20 a and the outer surface 20 b of the first substrate 20 are formed in the first substrate 20. . The plurality of first through holes 23 are formed in two rows in the width direction of the first base material 20. Although not shown, the first through holes 23 in each row are formed at a predetermined pitch along the front-rear direction. And each 1st through hole 23 is the inner peripheral surface of the through-hole 21 which penetrates between the inner surface 20a and the outer surface 20b of the 1st base material 20, and the inner surface 20a and the outer surface of the 1st base material 20 An annular first conductive plating 22 extending between 20b is applied. The first conductive plating 22 is formed by, for example, tin plating or gold plating. Further, a resin 26 is filled in the central space of the annular first conductive plating 22. This space may be filled with a conductor instead of the resin 26, and the space 27 may not be filled with anything as shown in FIG. 7. A plurality of first conductive layers 24 connected to the inner surface 20 a side of the first conductive plating 22 are provided on the inner surface 20 a of the first base material 20. Each first conductive layer 24 is formed so as to include a portion surrounding the periphery of the first conductive plating 22 and a portion extending outward from the portion in the width direction. A plurality of second conductive layers 25 connected to the outer surface 20 b side of the first conductive plating 22 are provided on the outer surface 20 b of the first base material 20. Each second conductive layer 25 is also formed to include a portion surrounding the periphery of the first conductive plating 22 and a portion extending outward from the portion in the width direction.

そして、第２基材３０は、図５に示すように、幅方向（図５における左右方向）及び長手方向（図５における上下方向）に延びる略矩形形状の平板状部材である。第２基材３０は、切欠かれている第１基材２０の内表面２０ａと同一の幅及び長さを有する。そして、第２基材３０は、図２、図４及び図６に示すように、気密チャンバＣの内部側に位置する内表面３０ａと外表面３０ｂとを有する。第２基材３０は、例えば、ガラス入りエポキシ製である。図５及び図６に示すように、第１基材２０の切欠２０ｃの部分と、第２基材３０の外周端面の部分と、第２基材３０の内表面３０ａの外周部分とに、連続的に無端状に延びる半田付け層１１が形成されている。半田付け層１１は、例えば、すずめっきあるいは金めっきで形成される。   And the 2nd base material 30 is a substantially rectangular flat plate member extended in the width direction (left-right direction in FIG. 5) and a longitudinal direction (up-down direction in FIG. 5), as shown in FIG. The second base material 30 has the same width and length as the inner surface 20a of the cut first base material 20. And the 2nd base material 30 has the inner surface 30a and the outer surface 30b which are located in the inside of the airtight chamber C, as shown in FIG.2, FIG4 and FIG.6. The second substrate 30 is made of glass-containing epoxy, for example. As shown in FIGS. 5 and 6, the notch 20 c portion of the first base material 20, the outer peripheral end face portion of the second base material 30, and the outer peripheral portion of the inner surface 30 a of the second base material 30 are continuous. An endless soldering layer 11 is formed. The soldering layer 11 is formed by, for example, tin plating or gold plating.

また、第２基材３０には、図６に示すように、第２基材３０の内表面３０ａ及び外表面３０ｂ間を電気的に相互接続する複数の第２スルーホール３３が形成されている。複数の第２スルーホール３３は、第２基材３０の幅方向において第１スルーホール２３よりも外側の位置に２列状に形成されている。各列の第２スルーホール３３は、前後方向に沿って所定ピッチで形成されている。そして、各第２スルーホール３３は、第２基材３０の内表面３０ａと外表面３０ｂとの間を貫通する貫通孔３１の内周面に、第２基材３０の内表面３０ａと外表面３０ｂとの間を延びる第２導電めっき３２を施してなる。第２導電めっき３２は、図６に示すように、貫通孔３１の内部をすべて埋め尽くすように形成されている。但し、図７に示すように、第２導電めっき３２を内表面３０ａと外表面３０ｂとの間を延びる環状に形成し、中央に空間３５を形成するようにしてよい。第２導電めっき３２は、例えば、すずめっきあるいは金めっきで形成される。そして、第２基材３０の内表面３０ａには、第２導電めっき３２の内表面側に接続された複数の第３導電層３４が設けられている。各第３導電層３４は、図５及び図６に示すように、第２導電めっき３２の内表面側端部を覆いかつ幅方向内側に延びる長方形状に形成されている。   In addition, as shown in FIG. 6, the second base material 30 is formed with a plurality of second through holes 33 that electrically interconnect the inner surface 30 a and the outer surface 30 b of the second base material 30. . The plurality of second through holes 33 are formed in two rows at positions outside the first through holes 23 in the width direction of the second base material 30. The second through holes 33 in each row are formed at a predetermined pitch along the front-rear direction. And each 2nd through hole 33 is the inner peripheral surface of the through-hole 31 which penetrates between the inner surface 30a and the outer surface 30b of the 2nd base material 30, and the inner surface 30a and the outer surface of the 2nd base material 30 A second conductive plating 32 extending between 30b is applied. As shown in FIG. 6, the second conductive plating 32 is formed so as to completely fill the inside of the through hole 31. However, as shown in FIG. 7, the second conductive plating 32 may be formed in an annular shape extending between the inner surface 30a and the outer surface 30b, and a space 35 may be formed in the center. The second conductive plating 32 is formed by, for example, tin plating or gold plating. A plurality of third conductive layers 34 connected to the inner surface side of the second conductive plating 32 are provided on the inner surface 30 a of the second base material 30. As shown in FIGS. 5 and 6, each third conductive layer 34 is formed in a rectangular shape that covers the inner surface side end of the second conductive plating 32 and extends inward in the width direction.

更に、第３基材４０は、幅方向（図５における左右方向）及び長手方向（図５における上下方向）に延びる略矩形形状の平板状部材である。第３基材４０は、第１基材２０の外表面２０ｂと同一の幅及び長さを有する。そして、第３基材４０は、図２、図４及び図６に示すように、気密チャンバＣの内部側に位置する内表面４０ａと外表面４０ｂとを有する。第３基材４０は、例えば、ガラス入りエポキシ製である。   Furthermore, the 3rd base material 40 is a substantially rectangular flat plate-shaped member extended in the width direction (left-right direction in FIG. 5) and a longitudinal direction (up-down direction in FIG. 5). The third substrate 40 has the same width and length as the outer surface 20 b of the first substrate 20. And the 3rd base material 40 has the inner surface 40a and the outer surface 40b which are located in the inside of the airtight chamber C, as shown in FIG.2, FIG4 and FIG.6. The third base material 40 is made of glass-filled epoxy, for example.

また、第３基材４０には、図６に示すように、第３基材４０の内表面４０ａ及び外表面４０ｂ間を電気的に相互接続する複数の第３スルーホール４３が形成されている。複数の第３スルーホール４３は、第３基材４０の幅方向において第１スルーホール２３よりも外側の位置に２列状に形成されている。各列の第３スルーホール４３は、前後方向に沿って所定ピッチで形成されている。そして、各第３スルーホール４３は、第３基材４０の内表面４０ａと外表面４０ｂとの間を貫通する貫通孔４１の内周面に、第３基材４０の内表面４０ａと外表面４０ｂとの間を延びる第３導電めっき４２を施してなる。第３導電めっき４２は、図６に示すように、貫通孔４１の内部をすべて埋め尽くすように形成されている。但し、図７に示すように、第３導電めっき４２を内表面４０ａと外表面４０ｂとの間を延びる環状に形成し、中央に空間４５を形成するようにしてよい。第３導電めっき４２は、例えば、すずめっきあるいは金めっきで形成される。そして、第３基材４０の外表面４０ｂには、第３導電めっき４２の外表面側に接続された複数の第４導電層４４が設けられている。各第４導電層４４は、第３導電めっき４２の外表面側端部を覆いかつ幅方向内側に延びる長方形状に形成されている。 Further, as shown in FIG. 6, a plurality of third through holes 43 that electrically connect the inner surface 40 a and the outer surface 40 b of the third substrate 40 are formed in the third substrate 40. . The plurality of third through holes 43 are formed in two rows at positions outside the first through holes 23 in the width direction of the third base material 40. The third through holes 43 in each row are formed at a predetermined pitch along the front-rear direction. And each 3rd through-hole 43 is the inner peripheral surface of the through-hole 41 which penetrates between the inner surface 40a and the outer surface 40b of the 3rd base material 40, and the inner surface 40a and the outer surface of the 3rd base material 40 A third conductive plating 42 extending between 40b is applied. As shown in FIG. 6, the third conductive plating 42 is formed so as to completely fill the inside of the through hole 41. However, as shown in FIG. 7, the third conductive plating 42 may be formed in an annular shape extending between the inner surface 40a and the outer surface 40b, and a space 45 may be formed in the center. The third conductive plating 42 is formed by, for example, tin plating or gold plating. A plurality of fourth conductive layers 44 connected to the outer surface side of the third conductive plating 42 are provided on the outer surface 40 b of the third base material 40. Each fourth conductive layer 44 is formed in a rectangular shape that covers the outer surface side end of the third conductive plating 42 and extends inward in the width direction.

そして、図６に示すように、第２基材３０の外表面３０ｂが第１基材２０の内表面２０ａに接するように配置されて、第２基材３０によって第１基材２０に形成された第１スルーホール２３の内表面側が塞がれる。また、第１導電層２４と第２導電めっき３２の外表面側とが接続される。
更に、第３基材４０の内表面４０ａが第１基材２０の外表面２０ｂに接するように配置されて、第３基材４０によって第１基材２０に形成された第１スルーホール２３の外表面側が塞がれる。また、第２導電層２５と第３導電めっき４２の内表面側とが接続される。 Then, as shown in FIG. 6, the outer surface 30 b of the second base material 30 is disposed so as to contact the inner surface 20 a of the first base material 20, and is formed on the first base material 20 by the second base material 30. Further, the inner surface side of the first through hole 23 is closed. Further, the first conductive layer 24 and the outer surface side of the second conductive plating 32 are connected.
Further, the inner surface 40 a of the third base material 40 is disposed so as to be in contact with the outer surface 20 b of the first base material 20, and the first through hole 23 formed in the first base material 20 by the third base material 40. The outer surface side is blocked. Further, the second conductive layer 25 and the inner surface side of the third conductive plating 42 are connected.

この多層基板１０において、内表面側から外表面側に向かう第２基材３０、第１基材２０、及び第３基材４０の層方向に、第３導電層３４、第１導電層２４、第２導電層２５、及び第４導電層４４の４個の導電層が配置されている。このため、多層基板１０は、４層基板を構成している。
また、コネクタ１は、図３及び図４に示すように、第２基材３０の内表面３０ａ側に配置される第１コネクタ５０と、第３基材４０の外表面４０ｂ側に配置される第２コネクタ６０とを備えている。
In the multilayer substrate 10, in the layer direction of the second base material 30, the first base material 20, and the third base material 40 from the inner surface side to the outer surface side, a third conductive layer 34, a first conductive layer 24, Four conductive layers of the second conductive layer 25 and the fourth conductive layer 44 are arranged. For this reason, the multilayer substrate 10 constitutes a four-layer substrate.
Further, as shown in FIGS. 3 and 4, the connector 1 is disposed on the first connector 50 disposed on the inner surface 30 a side of the second substrate 30 and on the outer surface 40 b side of the third substrate 40. And a second connector 60.

ここで、第１コネクタ５０は、図４に示すように、絶縁性のハウジング５１と、ハウジング５１に収容される複数の電気コンタクト５２とを備えている。複数の電気コンタクト５２は、第２基材３０に形成された第２スルーホール３３及び第３導電層３４に対応して、図３に示すように、ハウジング５１の幅方向において２列状に配置されている。各列の電気コンタクト５２は、前後方向に沿って所定ピッチで配置されている。
そして、各電気コンタクト５２は、第２基材３０に形成された第３導電層３４に半田接続される接続部５２ａと、弾性接触部５２ｂとを備えている。 Here, as shown in FIG. 4, the first connector 50 includes an insulating housing 51 and a plurality of electrical contacts 52 accommodated in the housing 51. The plurality of electrical contacts 52 are arranged in two rows in the width direction of the housing 51 as shown in FIG. 3 corresponding to the second through holes 33 and the third conductive layer 34 formed in the second base material 30. Has been. The electrical contacts 52 in each row are arranged at a predetermined pitch along the front-rear direction.
Each electrical contact 52 includes a connection portion 52a that is solder-connected to the third conductive layer 34 formed on the second base material 30, and an elastic contact portion 52b.

一方、第２コネクタ６０は、図４に示すように、絶縁性のハウジング６１と、ハウジング６１に収容される複数の電気コンタクト６２とを備えている。複数の電気コンタクト６２は、第３基材４０に形成された第３スルーホール４３及び第４導電層４４に対応してハウジング６１の幅方向において２列状に配置されている。各列の電気コンタクト６２は、前後方向に沿って所定ピッチで配置されている。
そして、各電気コンタクト６２は、第３基材４０に形成された第４導電層４４に半田接続される接続部６２ａと、弾性接触部６２ｂとを備えている。 On the other hand, the second connector 60 includes an insulating housing 61 and a plurality of electrical contacts 62 accommodated in the housing 61 as shown in FIG. The plurality of electrical contacts 62 are arranged in two rows in the width direction of the housing 61 corresponding to the third through holes 43 and the fourth conductive layer 44 formed in the third base material 40. The electrical contacts 62 in each row are arranged at a predetermined pitch along the front-rear direction.
Each electrical contact 62 includes a connection portion 62a that is solder-connected to the fourth conductive layer 44 formed on the third base material 40, and an elastic contact portion 62b.

次に、気密チャンバＣの内側及び外側をコネクタ１を用いて電気的に相互接続する際には、先ず、図１に示すように、第１回路基板７０を気密チャンバＣ内に配置しておく。そして、図２に示すように、コネクタ１を構成する第２基材３０の内表面３０ａを隔壁９０側にして開口部９１側に向ける。そして、半田付け層１１を半田Ｓによって隔壁９０に接続する。これにより、コネクタ１が隔壁９０に固定されると共に、開口部９１がコネクタ１によって塞がれる。また、第１コネクタ５０の電気コンタクト５２における弾性接触部５２ｂが第１回路基板７０に接触する。
そして、図１に示すように、第２回路基板８０を、第２コネクタ６０における電気コンタクト６２の弾性接触部６２ｃに接触させる。これにより、第１回路基板７０及び第２回路基板８０がコネクタ１を介して電気的に相互接続される。 Next, when the inner side and the outer side of the hermetic chamber C are electrically interconnected using the connector 1, first, the first circuit board 70 is arranged in the hermetic chamber C as shown in FIG. . And as shown in FIG. 2, the inner surface 30a of the 2nd base material 30 which comprises the connector 1 is turned to the partition 90 side, and is turned to the opening part 91 side. Then, the soldering layer 11 is connected to the partition wall 90 by the solder S. Thereby, the connector 1 is fixed to the partition wall 90 and the opening 91 is closed by the connector 1. Further, the elastic contact portion 52 b in the electrical contact 52 of the first connector 50 contacts the first circuit board 70.
Then, as shown in FIG. 1, the second circuit board 80 is brought into contact with the elastic contact portion 62 c of the electrical contact 62 in the second connector 60. As a result, the first circuit board 70 and the second circuit board 80 are electrically interconnected via the connector 1.

ここで、本実施形態に係るコネクタ１によれば、気密チャンバＣの内部と外部とを貫通する開口部９１を塞ぐ多層基板１０を備えている。そして、この多層基板１０において、第２基材３０の外表面３０ｂを第１基材２０の内表面２０ａに接するように配置して第２基材３０によって、第１基材２０に形成された第１スルーホール２３の内表面側を塞ぐ。また、第３基材４０の内表面４０ａを第１基材２０の外表面２０ｂに接するように配置して第３基材４０によって第１スルーホール２３の外表面側を塞ぐ。このため、多層基板１０を構成する第２基材３０及び第３基材４０により、第１基板２０の第１スルーホール２３の内表面側及び外表面側を塞ぐことができ、チャンバＣの内部の気密性を保持することができる。 Here, according to the connector 1 according to the present embodiment, the multilayer substrate 10 that closes the opening 91 that penetrates the inside and the outside of the airtight chamber C is provided. And in this multilayer substrate 10, the outer surface 30b of the 2nd base material 30 was arrange | positioned so that the inner surface 20a of the 1st base material 20 might be contacted, and it was formed in the 1st base material 20 by the 2nd base material 30 The inner surface side of the first through hole 23 is closed. Further, the inner surface 40 a of the third base material 40 is disposed so as to be in contact with the outer surface 20 b of the first base material 20, and the outer surface side of the first through hole 23 is blocked by the third base material 40. Therefore, the inner surface side and the outer surface side of the first through hole 23 of the first substrate 20 can be closed by the second base material 30 and the third base material 40 constituting the multilayer substrate 10, and the inside of the chamber C Airtightness can be maintained.

また、第１基材２０が、第１スルーホール２３の第１導電めっき２２の内表面側に接続された第１導電層２４と、第１導電めっき２２の外表面側に接続された第２導電層２５とを備える。また、第２基材３０が、第２スルーホール３３の第２導電めっき３２の内表面側に接続された第３導電層３４を備える。更に、第３基材４０が、第３スルーホール４３の第３導電めっき４２の外表面側に接続された第４導電層４４を備える。そして、第１導電層２４と第２導電めっき３２の外表面側とを接続し、第２導電層２５と第３導電めっき４２の内表面側とを接続した。このため、多層基板１０において、内表面側から外表面側に向けて、第３導電層３４、第２導電めっき３２、第１導電層２４、第１導電めっき２２、第２導電層２５、第３導電めっき４２、及び第４導電層４４の順に接続される。このため、チャンバＣの内部と外部との確実な電気的接続性を得ることができる。   In addition, the first base material 20 is connected to the inner surface side of the first conductive plating 22 of the first through hole 23, and the second conductive layer is connected to the outer surface side of the first conductive plating 22. And a conductive layer 25. The second base material 30 includes a third conductive layer 34 connected to the inner surface side of the second conductive plating 32 of the second through hole 33. Further, the third base material 40 includes a fourth conductive layer 44 connected to the outer surface side of the third conductive plating 42 of the third through hole 43. Then, the first conductive layer 24 and the outer surface side of the second conductive plating 32 were connected, and the second conductive layer 25 and the inner surface side of the third conductive plating 42 were connected. Therefore, in the multilayer substrate 10, from the inner surface side toward the outer surface side, the third conductive layer 34, the second conductive plating 32, the first conductive layer 24, the first conductive plating 22, the second conductive layer 25, the second The three conductive plating 42 and the fourth conductive layer 44 are connected in this order. For this reason, reliable electrical connectivity between the inside and the outside of the chamber C can be obtained.

これにより、基材（第１基材２０）に形成されたスルーホール（第１スルーホール２３）の内部にはんだ等の導電体を充填しなくてもチャンバＣの内部の気密性を保持すると同時に、チャンバＣの内部と外部との確実な電気的接続性を得ることができる。従って、基材にスルーホールを形成する通常の工程に対して付加的な工程である半田等の導電体の充填工程が不要となり、コネクタ１の生産性を向上させることができる。   As a result, the airtightness inside the chamber C is maintained without filling the inside of the through hole (first through hole 23) formed in the base material (first base material 20) with a conductor such as solder. , Reliable electrical connectivity between the inside and the outside of the chamber C can be obtained. Therefore, a step of filling a conductor such as solder, which is an additional step to the normal step of forming a through hole in the base material, is not necessary, and the productivity of the connector 1 can be improved.

次に、図７を参照して第１変形例の多層基板１０を、図８を参照して第２変形例の多層基板１０を、図９を参照して第３変形例の多層基板１０を説明する。図７、図８及び図９において、図６に示す多層基板１０と同一の部材については同一の符号を付し、その説明を省略することがある。
先ず、図７に示す第１変形例の多層基板１０は、図６に示す多層基板１０と異なり、前述したように、環状の第１スルーホール２３の第１導電めっき２２の中央の空間２７には何も充填されていない。また、前述したように、第２導電めっき３２を第２基材３０の内表面３０ａと外表面３０ｂとの間を延びる環状に形成し、中央に空間３５を形成している。更に、第３導電めっき４２を第３基材４０の内表面４０ａと外表面４０ｂとの間を延びる環状に形成し、中央に空間３５を形成している。 Next, referring to FIG. 7, the multilayer substrate 10 of the first modification, the multilayer substrate 10 of the second modification with reference to FIG. 8, and the multilayer substrate 10 of the third modification with reference to FIG. explain. 7, 8 and 9, the same members as those in the multilayer substrate 10 shown in FIG. 6 are denoted by the same reference numerals, and the description thereof may be omitted.
First, the multilayer substrate 10 of the first modification shown in FIG. 7 is different from the multilayer substrate 10 shown in FIG. 6 in the space 27 in the center of the first conductive plating 22 of the annular first through hole 23 as described above. nothing is filled. Further, as described above, the second conductive plating 32 is formed in an annular shape extending between the inner surface 30a and the outer surface 30b of the second base material 30, and a space 35 is formed in the center. Further, the third conductive plating 42 is formed in an annular shape extending between the inner surface 40a and the outer surface 40b of the third substrate 40, and a space 35 is formed in the center.

この第１変形例の多層基板１０によっても、基材（第１基材２０）に形成されたスルーホール（第１スルーホール２３）の内部にはんだ等の導電体を充填しなくてもチャンバＣの内部の気密性を保持することができる。また同時に、チャンバＣの内部と外部との確実な電気的接続性を得ることができる。
なお、図６に示す多層基板１０のように、環状の第１導電めっき２２の中央の空間に樹脂２６を充填したり、あるいは当該空間に導電体を充填すると、チャンバＣの内部の気密性保持効果を高めることができる。また、図６に示す多層基板１０のように、第２導電めっき３２を、貫通孔３１の内部をすべて埋め尽くすように形成しても、チャンバＣの内部の気密性保持効果を高めることができる。更に、同様に、第３導電めっき４２を、貫通孔４１の内部をすべて埋め尽くすように形成しても、チャンバＣの内部の気密性保持効果を高めることができる。 Even in the multilayer substrate 10 of the first modified example, the chamber C can be formed without filling a conductor such as solder in the through hole (first through hole 23) formed in the base material (first base material 20). The internal airtightness of the can be maintained. At the same time, reliable electrical connectivity between the inside and the outside of the chamber C can be obtained.
As shown in FIG. 6, when the space in the center of the annular first conductive plating 22 is filled with the resin 26 or the space is filled with a conductor, the airtightness inside the chamber C is maintained. The effect can be enhanced. Further, even if the second conductive plating 32 is formed so as to fill the entire inside of the through hole 31 as in the multilayer substrate 10 shown in FIG. 6, the effect of maintaining the hermeticity inside the chamber C can be enhanced. . Furthermore, similarly, even if the third conductive plating 42 is formed so as to completely fill the inside of the through hole 41, the airtightness maintaining effect inside the chamber C can be enhanced.

次に、図８に示す第２変形例の多層基板１０は、図６に示す多層基板１０と異なり、複数の第２スルーホール３３が第２基材３０の幅方向において第１スルーホール２３と同一の位置に形成されている。また、複数の第３スルーホール４３も第３基材４０の幅方向において第１スルーホール２３と同一の位置に形成されている。即ち、第１スルーホール２３、第２スルーホール３３、及び第３スルーホール４３が、多層基板１０の内側から外側に向けて直線状に配置されている。   Next, the multilayer substrate 10 of the second modified example shown in FIG. 8 differs from the multilayer substrate 10 shown in FIG. 6 in that the plurality of second through holes 33 and the first through holes 23 in the width direction of the second base material 30. They are formed at the same position. The plurality of third through holes 43 are also formed at the same position as the first through holes 23 in the width direction of the third base material 40. That is, the first through hole 23, the second through hole 33, and the third through hole 43 are linearly arranged from the inner side to the outer side of the multilayer substrate 10.

そして、図８に示す第２変形例の多層基板１０は、図６に示す多層基板１０と異なり、第１導電層２４が、環状に形成された第１導電めっき２２の内表面側端部を覆うように第１導電めっき２２と同心に形成されている。また、第２導電層２５が、環状に形成された第１導電めっき２２の外表面端部を覆うように第１導電めっき２２と同心に形成されている。 8 differs from the multilayer substrate 10 shown in FIG. 6 in that the first conductive layer 24 has an end on the inner surface side of the first conductive plating 22 formed in an annular shape. It is formed concentrically with the first conductive plating 22 so as to cover it. Moreover, the 2nd conductive layer 25 is formed concentrically with the 1st conductive plating 22 so that the outer surface edge part of the 1st conductive plating 22 formed in cyclic | annular form may be covered.

この第２変形例の多層基板１０によっても、基材（第１基材２０）に形成されたスルーホール（第１スルーホール２３）の内部にはんだ等の導電体を充填しなくてもチャンバＣの内部の気密性を保持することができる。また同時に、チャンバＣの内部と外部との確実な電気的接続性を得ることができる。
なお、図８に示す多層基板１０のように、複数の第２スルーホール３３及び複数の第３スルーホール４３を、第２基材３０の幅方向において第１スルーホール２３と異なる位置に形成した方が、チャンバＣの内部の気密性保持効果を高めることができる。 Even in the multilayer substrate 10 of the second modified example, the chamber C can be formed without filling a conductor such as solder in the through hole (first through hole 23) formed in the base material (first base material 20). The internal airtightness of the can be maintained. At the same time, reliable electrical connectivity between the inside and the outside of the chamber C can be obtained.
8, the plurality of second through holes 33 and the plurality of third through holes 43 are formed at positions different from the first through holes 23 in the width direction of the second base material 30. In this way, the effect of maintaining the airtightness inside the chamber C can be enhanced.

更に、図９に示す第３変形例の多層基板１０は、図８に示す多層基板１０と基本構成は同一であるが、図８に示す多層基板１０と異なり、第２導電めっき３２を内表面３０ａと外表面３０ｂとの間を延びる環状に形成し、中央に空間３５を形成してある。また、第３導電めっき４２を内表面４０ａと外表面４０ｂとの間を延びる環状に形成し、中央に空間４５を形成してある。   Furthermore, the multilayer substrate 10 of the third modified example shown in FIG. 9 has the same basic configuration as the multilayer substrate 10 shown in FIG. 8, but differs from the multilayer substrate 10 shown in FIG. It is formed in an annular shape extending between 30a and the outer surface 30b, and a space 35 is formed in the center. The third conductive plating 42 is formed in an annular shape extending between the inner surface 40a and the outer surface 40b, and a space 45 is formed in the center.

この第３変形例の多層基板１０によっても、基材（第１基材２０）に形成されたスルーホール（第１スルーホール２３）の内部にはんだ等の導電体を充填しなくてもチャンバＣの内部の気密性を保持することができる。また同時に、チャンバＣの内部と外部との確実な電気的接続性を得ることができる。
以上、本発明の実施形態について説明してきたが、本発明はこれに限定されず、種々の変更、改良を行うことができる。 Even in the multilayer substrate 10 of the third modified example, the chamber C can be formed without filling a conductor such as solder in the through hole (first through hole 23) formed in the base material (first base material 20). The internal airtightness of the can be maintained. At the same time, reliable electrical connectivity between the inside and the outside of the chamber C can be obtained.
As mentioned above, although embodiment of this invention was described, this invention is not limited to this, A various change and improvement can be performed.

例えば、第１基材２０、第２基材３０、及び第３基材４０は、それぞれ単層で構成されているが、複数の層で構成するようにしてもよい。
また、多層基板１０は、４層で構成される場合のみならず、５層、６層など、４層以上で構成されればよい。
更に、コネクタ１は、第１コネクタ５０及び第２コネクタ６０を必ずしも備えている必要はない。 For example, the first base material 20, the second base material 30, and the third base material 40 are each composed of a single layer, but may be composed of a plurality of layers.
Moreover, the multilayer substrate 10 may be composed of not only four layers but also four or more layers such as five layers and six layers.
Further, the connector 1 does not necessarily include the first connector 50 and the second connector 60.

１ コネクタ
１０ 多層基板
２０ 第１基材
２０ａ 内表面
２０ｂ 外表面
２１ 貫通孔
２２ 第１導電めっき
２３ 第１スルーホール
２４ 第１導電層
２５ 第２導電層
３０ 第２基材
３０ａ 内表面
３０ｂ 外表面
３１ 貫通孔
３２ 第２導電めっき
３３ 第２スルーホール
３４ 第３導電層
４０ 第３基材
４０ａ 内表面
４０ｂ 外表面
４１ 貫通孔
４２ 第３導電めっき
４３ 第３スルーホール
４４ 第４導電層
９０ 隔壁
９１ 開口部
Ｃ 気密チャンバ DESCRIPTION OF SYMBOLS 1 Connector 10 Multilayer substrate 20 1st base material 20a Inner surface 20b Outer surface 21 Through-hole 22 1st electroconductive plating 23 1st through-hole 24 1st conductive layer 25 2nd conductive layer 30 2nd base material 30a Inner surface 30b Outer surface 31 Through hole 32 Second conductive plating 33 Second through hole 34 Third conductive layer 40 Third substrate 40a Inner surface 40b Outer surface 41 Through hole 42 Third conductive plating 43 Third through hole 44 Fourth conductive layer 90 Partition 91 Opening C Airtight chamber

Claims (2)

隔壁で区画される気密チャンバの内側及び外側を電気的に相互接続するために用いられ、隔壁に形成された、気密チャンバの内部と外部とを貫通する開口部を塞ぐコネクタであって、
前記開口部を塞ぐ多層基板を備え、
該多層基板は、平板状の第１基材と、該第１基材の内表面側に配置されて前記開口部を塞ぐ平板状の第２基材と、前記第１基材の外表面側に配置される平板状の第３基材とを備え、
前記第１基材は、該第１基材の内表面及び外表面との間を貫通する貫通孔の内周面に前記内表面と外表面との間を延びる第１導電めっきを施してなる第１スルーホールを有するとともに、前記第１基材の内表面に設けられた、前記第１導電めっきの内表面側に接続された第１導電層と、前記第１基材の外表面に設けられた、前記第１導電めっきの外表面側に接続された第２導電層とを備え、
前記第２基材は、該第２基材の内表面及び外表面との間を貫通する貫通孔の内周面に前記第２基材の内表面と外表面との間を延びる第２導電めっきを施してなる第２スルーホールを有するとともに、前記第２基材の内表面に設けられた、前記第２導電めっきの内表面側に接続された第３導電層を備え、
前記第３基材は、該第３基材の内表面及び外表面との間を貫通する貫通孔の内周面に前記第３基材の内表面と外表面との間を延びる第３導電めっきを施してなる第３スルーホールを有するとともに、前記第３基材の外表面に設けられた、前記第３導電めっきの外表面側に接続された第４導電層を備え、
前記第２基材の外表面を前記第１基材の内表面に接するように配置して前記第２基材によって前記第１スルーホールの内表面側を塞ぐとともに、前記第１導電層と前記第２導電めっきの外表面側とを接続し、
前記第３基材の内表面を前記第１基材の外表面に接するように配置して前記第３基材によって前記第１スルーホールの外表面側を塞ぐとともに、前記第２導電層と前記第３導電めっきの内表面側とを接続し、
前記第１基材、前記第２基材及び前記第３基材は、ガラス入りエポキシ製であることを特徴とするコネクタ。 A connector used for electrically interconnecting the inside and outside of the hermetic chamber defined by the partition wall and closing the opening formed in the partition wall and penetrating the inside and the outside of the hermetic chamber,
A multilayer substrate that closes the opening;
The multilayer substrate includes a flat plate-like first base material, a flat plate-like second base material that is disposed on the inner surface side of the first base material and closes the opening, and an outer surface side of the first base material And a flat plate-like third base material disposed on
The first base material is formed by performing first conductive plating extending between the inner surface and the outer surface on an inner peripheral surface of a through hole penetrating between the inner surface and the outer surface of the first base material. A first conductive layer having a first through hole, provided on the inner surface of the first base material, connected to the inner surface side of the first conductive plating, and provided on the outer surface of the first base material And a second conductive layer connected to the outer surface side of the first conductive plating,
The second base material has a second conductivity extending between the inner surface and the outer surface of the second base material on an inner peripheral surface of a through-hole penetrating between the inner surface and the outer surface of the second base material. A third conductive layer having a second through hole formed by plating and connected to the inner surface side of the second conductive plating provided on the inner surface of the second substrate;
The third base material has third conductivity extending between an inner surface and an outer surface of the third base material on an inner peripheral surface of a through-hole penetrating between the inner surface and the outer surface of the third base material. A fourth conductive layer having a third through hole formed by plating and connected to the outer surface side of the third conductive plating provided on the outer surface of the third substrate;
The outer surface of the second substrate is disposed so as to be in contact with the inner surface of the first substrate, and the inner surface side of the first through hole is blocked by the second substrate, and the first conductive layer and the Connect the outer surface side of the second conductive plating,
The inner surface of the third substrate is disposed so as to be in contact with the outer surface of the first substrate, the outer surface side of the first through hole is blocked by the third substrate, and the second conductive layer and the Connect the inner surface side of the third conductive plating ,
The first base material, the second base material, and the third base material are made of glass-filled epoxy . 前記第１スルーホールが、樹脂で充填されていることを特徴とする請求項１に記載のコネクタ。   The connector according to claim 1, wherein the first through hole is filled with a resin.
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