JP6200871B2 - パワーモジュール及び電力変換装置 - Google Patents
パワーモジュール及び電力変換装置 Download PDFInfo
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- JP6200871B2 JP6200871B2 JP2014182843A JP2014182843A JP6200871B2 JP 6200871 B2 JP6200871 B2 JP 6200871B2 JP 2014182843 A JP2014182843 A JP 2014182843A JP 2014182843 A JP2014182843 A JP 2014182843A JP 6200871 B2 JP6200871 B2 JP 6200871B2
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- conductor
- power module
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- intermediate conductor
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Description
(数1) V=V1・(Ce+Cf)/Cf=V1・(df/(ε・de)+1)
(数2) Ce=ε0・S/de
(数3) Cf=ε0・ε・S/df
電極と絶縁層の間や、絶縁層内部において、ボイドや剥離による空気層が発生すると、電極に高電圧が印加されたときに部分放電が発生する。絶縁層は、常時部分放電する環境に晒されると、放電による火花で侵食され、耐久時間が著しく低下する。特に、樹脂製の絶縁体では、セラミックスに比べ耐熱性が低く、その影響が顕著となる。絶縁性を向上させるには、部分放電しない条件で使用をすることが有効である。
(数4) V2=V3・Ca/(Ca+Cb)
(数5) Ca=ε0・εa・Sa/da
(数6) Cb=ε0・εb・Sb/db
ただし、Caは電極800と中間導体801の間の容量を、Cbは中間導体801と電極802の間の容量を、ε0は真空の誘電率を、εaは絶縁層810の比誘電率を、εbは絶縁層811の比誘電率を、Saは電極800と中間導体801の配置方向における投影面が重なり合う面積を、Sbは中間導体801と電極802の配置方向における投影面が重なり合う面積を、daは絶縁層810の厚さを、dbは絶縁層811の厚さを、それぞれ表す。
(数7) V2/V3=50%
図11は、図10の発信器1001の周波数を変化させたときの電圧分担率V2/V3を示すグラフである。電圧分担率は、中間導体801及び電極802間の電圧V1と、電極800及び電極802間の電圧V2とを、カーブトレーサ1000により測定することで、求めた。
(数8) V4=V5・Cc/(Cc+Cd+Ce)
(数9) Cc=ε0・εc・Sc/dc
(数10) Cd=ε0・εd・Sd/dd
(数11) Ce=ε0・εe・Se/de
ただし、Ccは交流側電極803と中間導体801の間の容量を、Cdは直流側電極804と中間導体801の間の容量を、Ceは中間導体801と電極802の間の容量を、ε0は真空の誘電率を、εcは交流側電極803と中間導体801の間の絶縁層の比誘電率を、εdは直流側電極804と中間導体801の間の絶縁層の比誘電率を、εeは中間導体801と電極802の間の絶縁層の比誘電率を、Scは交流側電極803と中間導体801の配置方向における投影面が重なり合う面積を、Sdは直流側電極804と中間導体801の配置方向における投影面が重なり合う面積を、Seは中間導体801と電極802の配置方向における投影面が重なり合う面積を、dcは交流側電極803と中間導体801の間の絶縁層の厚さ、ddは直流側電極804と中間導体801の間の絶縁層の厚さを、deは中間導体801と電極802の間の絶縁層の厚さを、それぞれ表す。
(数12) V4/V5≒24.4%
図13は、図12の発信器1001の周波数を変化させたときの電圧分担率V4/V5を示すグラフである。電圧分担率は、中間導体801及び電極802間の電圧V4と、電極803及び電極802間の電圧V5とを、カーブトレーサ1000により測定することで、求めた。
(数13) Cc/(Cc+Cd+Ce)≒0.5
すなわち、次式を満足する必要がある。
(数14) Cc≒Cd+Ce
SdやSeを小さくする場合、放熱性が低下する弊害がある。また、比誘電率で対応する場合、比誘電率は材料起因であり、大幅に変更する事が難しいため対応できる幅が制限される。このため、絶縁層厚さで対応する事が望ましい。しかし、Ccを構成する絶縁層の厚さを0.8kVpの電圧で部分放電しない80μmより大きくし、かつ上式を満足するようにするためには、絶縁層の総厚は、160μmより小さくすることはできない。
12 筺体
16 下部ケース
18 交流ターミナル
22 駆動回路基板
43 インバータ回路
110 ハイブリッド自動車
112 前輪
114 前輪車軸
116 デファレンシャルギア
118 変速機
120 エンジン
122 動力配分機構
136 バッテリ
138 直流コネクタ
140 インバータ回路
142 インバータ回路
156 ダイオード
166 ダイオード
172 制御回路
174 ドライバ回路
180 電流センサ
192 モータジェネレータ
194 モータジェネレータ
195 モータ
200 電力変換装置
230 入力積層配線板
300 パワーモジュール
304 冷却体
304A 冷却体の薄肉部
304B フランジ
305 放熱フィン
306 挿入口
307 放熱面
307A 第一放熱面
307B 第二放熱面
315 直流正極導体板
315B 直流正極端子
319 直流負極導体板
319B 直流負極端子
318 導体板
320B 交流端子
328 IGBT
330 IGBT
333 絶縁シート
348 第一封止材
350 冷却体の厚肉部
351 第二封止材
370 接続部
500 コンデンサモジュール
800 電極
801 中間導体
802 電極
803 電極
804 電極
810 絶縁層
811 絶縁層
850 空気層
851 絶縁層
900 絶縁層
910 交流側中間導体
911 直流側中間導体
912 交流側中間導体
913 交流側中間導体
914 直流側中間導体
1000 カーブトレーサ
1001 発信器
1002 直流電源
Claims (14)
- 直流電流を交流電流に変換するインバータ回路を構成する上アーム側の第1パワー半導体素子と、
前記インバータ回路を構成する下アーム側の第2パワー半導体素子と、
前記第1パワー半導体素子と電気的に接続されるとともに前記直流電流を伝達する第1導体部と、
前記第2パワー半導体素子と電気的に接続されるとともに前記交流電流を伝達する第2導体部と、
前記第2導体部を挟んで前記第2パワー半導体素子とは反対側に配置される導電性の第1放熱部と、
前記第1放熱部と前記第2導体部との間に配置される中間導体層と、を備え、
前記中間導体層と前記第2導体部の間及び前記中間導体層と前記第1放熱部の間には、絶縁層が配置されるパワーモジュール。 - 請求項1に記載のパワーモジュールであって、
前記第1導体部は、前記第1パワー半導体素子と前記第1放熱部との間に配置され、
前記第2導体部と前記中間導体層の配列方向に沿って投影した場合、前記中間導体層は、当該中間導体層の射影部が前記第1導体部の射影部と重ならないように、配置されるパワーモジュール。 - 請求項1に記載のパワーモジュールであって、
前記第1導体部は、前記第1パワー半導体素子と前記第1放熱部との間に配置され、
前記中間導体層は、前記第1放熱部と前記第1導体部との間に配置される第1中間導体層と、前記第1放熱部と前記第2導体部との間に配置される第2中間導体層と、を含み、
前記第2中間導体層は、前記第1中間導体層と分離して構成されるパワーモジュール。 - 請求項3に記載のパワーモジュールであって、
前記第2導体部と電気的に接続される第3導体部を備え、
前記中間導体層はさらに、前記第1放熱部と前記第3導体部との間に配置される第3中間導体層を含み、
前記第3中間導体層と前記第3導体部の間及び前記第3中間導体層と前記第1放熱部の間には、絶縁層が配置され、
前記第3中間導体層は、前記第1中間導体層と分離して構成されるパワーモジュール。 - 請求項2乃至4のいずれかに記載のパワーモジュールであって、
前記第2導体部と前記中間導体層の配列方向に沿って投影した場合、前記中間導体層は、前記第2導体部の射影部が当該中間導体層の射影部に包含されるように設けられるパワーモジュール。 - 請求項1乃至5のいずれかに記載のパワーモジュールであって、
前記中間導体層は、前記第2導体部と前記中間導体層の配列方向に沿って複数設けられるパワーモジュール。 - 請求項1乃至6のいずれかに記載のパワーモジュールであって、
前記第1パワー半導体素子を挟んで前記第1導体部とは反対側に配置されるとともに前記第1パワー半導体素子と電気的に接続される第3導体部と、
前記第2パワー半導体素子を挟んで前記第2導体部とは反対側に配置されるとともに前記第2パワー半導体素子と電気的に接続される第4導体部と、
前記第3導体部を挟んで前記第1パワー半導体素子とは反対側に配置される導電性の第2放熱部と、
前記第2放熱部と前記第3導体部との間に配置される第3中間導体層と、を備え、
前記第3導体部は、前記第2導体部と電気的に接続され、
前記第3中間導体層と前記第3導体部の間及び前記第3中間導体層と前記第2放熱部の間には、絶縁層が配置されるパワーモジュール。 - 請求項7に記載のパワーモジュールであって、
前記第4導体部は、前記第2パワー半導体素子と前記第2放熱部との間に配置され、
前記第2放熱部と前記第4導体部との間には、第4中間導体層が配置され、
前記第3中間導体層は、前記第4中間導体層と分離して構成されるパワーモジュール。 - 請求項8に記載のパワーモジュールであって、
前記第3導体部と前記第3中間導体層の配列方向に沿って投影した場合、前記第3中間導体層は、前記第3導体部の射影部が当該第3中間導体層の射影部に包含されるように設けられるパワーモジュール。 - 請求項7乃至9のいずれかに記載のパワーモジュールであって、
前記第3中間導体層は、前記第3導体部と前記第3中間導体層の配列方向に沿って複数設けられるパワーモジュール。 - 請求項1乃至10のいずれかに記載のパワーモジュールであって、
前記中間導体層は、前記絶縁層上に形成された金属箔であるパワーモジュール。 - 請求項1乃至10のいずれかに記載のパワーモジュールであって、
前記中間導体層は、前記絶縁層上に形成された導電性材料の蒸着物であるパワーモジュール。 - 請求項1乃至10のいずれかに記載のパワーモジュールであって、
前記中間導体層は、前記絶縁層上に形成された導電性材料の印刷物であるパワーモジュール。 - 請求項1乃至13のいずれかに記載のパワーモジュールを備えた電力変換装置。
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JP5520889B2 (ja) * | 2011-06-24 | 2014-06-11 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びそれを用いた電力変換装置 |
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WO2023112224A1 (ja) * | 2021-12-15 | 2023-06-22 | 日立Astemo株式会社 | 半導体装置および絶縁部材 |
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US20180211938A1 (en) | 2018-07-26 |
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CN106688093B (zh) | 2019-04-30 |
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