JP6559728B2 - 半導体装置及び電力変換装置 - Google Patents
半導体装置及び電力変換装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000006243 chemical reaction Methods 0.000 title claims description 7
- 229920005989 resin Polymers 0.000 claims description 35
- 239000011347 resin Substances 0.000 claims description 35
- 238000007789 sealing Methods 0.000 claims description 19
- 238000009413 insulation Methods 0.000 description 15
- 230000005684 electric field Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 125000005842 heteroatom Chemical group 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
図1は、本発明の第1の実施形態に係る半導体装置としてのパワーモジュール10の構成を示す斜視図である。図2は、パワーモジュール10の平面図である。図3Aは、図2における3A−3A線に沿った断面図、図3Bは、図2における3B−3B線に沿った断面図である。図4Aは、図2における4A−4A線に沿った断面図、図4Bは、図2における4B−4B線に沿った断面図である。図5は、パワーモジュール10の等価回路図である。
π×(D/2)2=W×H ・・・(1)
断面積を同じとするのは大電流を流して損失を低減させるために必要最小限となる断面積で規定するものである。これを大きくすると重量増、体格増となり問題となる。
図13は、本発明の第2の実施形態に係るパワーモジュール10Aの構成を示す斜視図である。図14は、図13における14−14線に沿った断面図である。パワーモジュール10Aは、電気端子30P、30N、30Oの形状が、第1の実施形態に係るパワーモジュール10と異なる。すなわち、パワーモジュール10Aの電気端子30P、30N、30Oの突出部32の、突出方向(Y方向)と直交する断面(X−Z面と平行な断面)の形状は、図14に示すように長円形である。より具体的には、電気端子30P、30N、30Oの突出部32の、端子配列方向(X方向)における端面が、端子配列方向(X方向)と直交する板厚方向(Z方向)における厚さTの2分の1の逆数(2/T)に相当する曲率を有する曲面である。換言すれば、突出部32は、図14に示す断面における、突出部32の端子配列方向(X方向)における端部の形状が、半径T/2の半円形である。これは、必要最小限の加工で対応できる形状である。
11A、11B パワー半導体素子
16 モールド樹脂
30P、30N、30O 電気端子
32 突出部
32a 第1の部分
32b 第2の部分
60 冷却器
100 インバータ
Claims (4)
- 少なくとも1つのパワー半導体素子と、
前記パワー半導体素子を封止する封止樹脂と、
各々が、前記パワー半導体素子に電気的に接続され且つ前記封止樹脂の表面から突出した突出部を有する複数の電気端子と、
を含み、
前記突出部は、突出方向における前記封止樹脂の側に設けられ、前記突出方向と交差する断面の形状が円形またはオーバル形状である第1の部分と、前記突出方向の先端側に設けられた平板状の第2の部分と、を含み、
前記第1の部分の前記突出方向と交差する断面の面積と、前記第2の部分の前記突出方向と交差する断面の面積とが同じである
半導体装置。 - 少なくとも1つのパワー半導体素子と、
前記パワー半導体素子を封止する封止樹脂と、
各々が、前記パワー半導体素子に電気的に接続され且つ前記封止樹脂の表面から突出した突出部を有する複数の電気端子と、
を含み、
前記突出部は、突出方向における前記封止樹脂の側に設けられ、前記突出方向と交差する断面の形状が円形またはオーバル形状である第1の部分と、前記突出方向の先端側に設けられた平板状の第2の部分と、を含み、
前記第1の部分は、前記複数の電気端子が並ぶ端子配列方向における端面が、前記端子配列方向と交差する方向における長さの2分の1の逆数に相当する曲率を有する曲面である
半導体装置。 - 第1のトランジスタ及び第2のトランジスタを前記パワー半導体素子として含み、
前記複数の電気端子は、前記第1のトランジスタのコレクタに接続された第1の電気端子と、前記第2のトランジスタのエミッタに接続された第2の電気端子と、前記第1のトランジスタのエミッタに接続されるとともに前記第2のトランジスタのコレクタに接続された第3の電気端子と、を含む
請求項1または請求項2に記載の半導体装置。 - 複数の半導体装置が、冷却器を間に挟んで積層された電力変換装置であって、
前記複数の半導体装置の各々は、
少なくとも1つのパワー半導体素子と、
前記パワー半導体素子を封止する封止樹脂と、
各々が、前記パワー半導体素子に電気的に接続され且つ前記封止樹脂の表面から突出した突出部を有する複数の電気端子と、
を含み、
前記突出部は、突出方向における前記封止樹脂の側に設けられ、前記突出方向と交差する断面の形状が円形またはオーバル形状である第1の部分と、前記突出方向の先端側に設けられた平板状の第2の部分と、を含む
電力変換装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2017074822A JP6559728B2 (ja) | 2017-04-04 | 2017-04-04 | 半導体装置及び電力変換装置 |
US15/944,033 US10593609B2 (en) | 2017-04-04 | 2018-04-03 | Semiconductor device and power converter |
CN201810310505.6A CN108695288B (zh) | 2017-04-04 | 2018-04-03 | 半导体器件和功率转换器 |
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JP2017074822A JP6559728B2 (ja) | 2017-04-04 | 2017-04-04 | 半導体装置及び電力変換装置 |
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JP2018181919A JP2018181919A (ja) | 2018-11-15 |
JP6559728B2 true JP6559728B2 (ja) | 2019-08-14 |
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US (1) | US10593609B2 (ja) |
JP (1) | JP6559728B2 (ja) |
CN (1) | CN108695288B (ja) |
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JP7159620B2 (ja) * | 2018-05-30 | 2022-10-25 | 富士電機株式会社 | 半導体装置、冷却モジュール、電力変換装置及び電動車両 |
US11682606B2 (en) * | 2019-02-07 | 2023-06-20 | Ford Global Technologies, Llc | Semiconductor with integrated electrically conductive cooling channels |
WO2022088179A1 (en) * | 2020-11-02 | 2022-05-05 | Dynex Semiconductor Limited | High power density 3d semiconductor module packaging |
Family Cites Families (22)
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