JP6192312B2 - 実装部材の製造方法および電子部品の製造方法。 - Google Patents
実装部材の製造方法および電子部品の製造方法。 Download PDFInfo
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- JP6192312B2 JP6192312B2 JP2013039447A JP2013039447A JP6192312B2 JP 6192312 B2 JP6192312 B2 JP 6192312B2 JP 2013039447 A JP2013039447 A JP 2013039447A JP 2013039447 A JP2013039447 A JP 2013039447A JP 6192312 B2 JP6192312 B2 JP 6192312B2
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Classifications
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/02—Containers; Seals
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
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- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
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- Y10T29/49002—Electrical device making
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Description
510 接着剤
40 枠体
24 実装部材
Claims (13)
- 電子デバイスの配置領域を有する基体と、前記配置領域に対応した開口を有し、前記基体の前記配置領域の周辺に接着された枠体と、を備える実装部材の製造方法であって、
基体と、前記基体の熱膨張率とは異なる熱膨張率を有する枠体とを、前記基体と前記枠体との間に熱硬化性の接着剤が介在した状態で重ねる工程と、
前記状態から前記基体と前記枠体と前記接着剤とを前記接着剤の硬化温度以上まで加熱することで、前記基体と前記枠体とを接着する工程と、
前記硬化温度から前記基体および枠体を冷却する工程と、有し、
前記状態において前記枠体は、前記状態において前記枠体が平坦である場合に比べて、
前記冷却を経た前記枠体の平面度が小さくなるような反りを有することを特徴とする実装部材の製造方法。 - 前記枠体の前記熱膨張率は前記基体の前記熱膨張率よりも高い、請求項1に記載の実装部材の製造方法。
- 前記冷却する工程では、前記枠体に前記枠体の反りが小さくなる変形が生じる、請求項1または2に記載の実装部材の製造方法。
- 前記枠体は、
第1角部、第2角部、および前記第1角部と前記第2角部の間の第1中間部を含む第1辺と、
第3角部、第4角部、および前記第3角部と前記第4角部の間の第2中間部を含む第2辺と、
前記第1角部、前記第3角部、および前記第1角部と前記第3角部の間の第3中間部を含む第3辺と、
前記第2角部、前記第4角部、および前記第2角部と前記第4角部の間の第4中間部を含む第4辺と、を有する四辺形を呈しており、
前記状態において、前記第1辺は、前記第1中間部と前記基体との距離が、前記第1角部と前記基体との距離および前記第2角部と前記基体との距離よりも大きくなる向きの反りを有しており、前記第2辺は、前記第2中間部と前記基体との距離が、前記第3角部と前記基体との距離および前記第4角部と前記基体との距離よりも大きくなる向きの反りを有し、
前記冷却する工程では、前記第1辺に前記第1辺の前記反りが小さくなる変形が生じ、前記第2辺に前記第2辺の前記反りが小さくなる変形が生じる、請求項3に記載の実装部材の製造方法。 - 前記状態において、前記第1中間部と前記基体との距離および前記第2中間部と前記基体との距離が、前記第3中間部と前記基体との距離および前記第4中間部と前記基体との距離よりも大きい、請求項4に記載の実装部材の製造方法。
- 前記状態において、前記第3辺は、前記第3中間部と前記基体との距離が、前記第1角部と前記基体との距離および前記第3角部と前記基体との距離よりも大きくなる向きの反りを有しており、前記第4辺は、前記第4中間部と前記基体との距離が、前記第2角部と前記基体との距離および前記第4角部と前記基体との距離よりも大きくなる向きの反りを有し、
前記冷却する工程では、前記第3辺に前記第3辺の前記反りが小さくなる変形が生じ、前記第4辺に前記第4辺の前記反りが小さくなる変形が生じる、請求項4または5に記載の実装部材の製造方法。 - 前記状態において、前記第1中間部と前記基体との前記距離と、前記第1角部と前記基体との前記距離との差、および、前記第1中間部と前記基体との前記距離と、前記第2角部と前記基体との前記距離との差が、前記第1中間部の厚みよりも小さい、請求項4乃至6のいずれか1項に記載の実装部材の製造方法。
- 前記状態において、前記第1中間部と前記基体との前記距離と、前記第1角部と前記基体との前記距離との差、および、前記第1中間部と前記基体との前記距離と、前記第2角部と前記基体との前記距離との差が、前記第1中間部の厚みの1/100以上1/10以下である、請求項4乃至7のいずれか1項に記載の実装部材の製造方法。
- 前記冷却する工程において、前記枠体には、前記状態における前記枠体の反りとは逆向きの反りが生じる、請求項2乃至8のいずれか1項に記載の実装部材の製造方法。
- 前記枠体は金属製であり、前記基体はセラミック製である、請求項1乃至9のいずれか1項に記載の実装部材の製造方法。
- 前記枠体は貫通穴が設けられた拡張部を有し、前記基体に接着された前記枠体の前記貫通穴は前記基体に重ならない、請求項1乃至10のいずれか1項に記載の実装部材の製造方法。
- 請求項1乃至11のいずれか1項に記載の実装部材の製造方法により形成された実装部材を準備する工程と、
前記基体に電子デバイスを固定する工程と、
前記枠体に前記電子デバイスに対向する蓋体を接着する工程と、
を備えることを特徴とする電子部品の製造方法。 - 前記蓋体を光硬化性の接着剤を用いて前記枠体に接着する、請求項12に記載の電子部品の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2013039447A JP6192312B2 (ja) | 2013-02-28 | 2013-02-28 | 実装部材の製造方法および電子部品の製造方法。 |
US14/192,702 US10381314B2 (en) | 2013-02-28 | 2014-02-27 | Method of manufacturing mounting member and method of manufacturing electronic component |
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JP2013039447A JP6192312B2 (ja) | 2013-02-28 | 2013-02-28 | 実装部材の製造方法および電子部品の製造方法。 |
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JP2014167990A JP2014167990A (ja) | 2014-09-11 |
JP6192312B2 true JP6192312B2 (ja) | 2017-09-06 |
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JP6296687B2 (ja) * | 2012-04-27 | 2018-03-20 | キヤノン株式会社 | 電子部品、電子モジュールおよびこれらの製造方法。 |
JP2013243340A (ja) * | 2012-04-27 | 2013-12-05 | Canon Inc | 電子部品、実装部材、電子機器およびこれらの製造方法 |
JP2017152546A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ニコン | 撮像装置及び半導体装置 |
JP6780277B2 (ja) * | 2016-03-29 | 2020-11-04 | 株式会社ニコン | 基板 |
JP7406314B2 (ja) * | 2019-06-24 | 2023-12-27 | キヤノン株式会社 | 電子モジュール及び機器 |
US20230028070A1 (en) * | 2021-07-23 | 2023-01-26 | Absolics Inc. | Substrate comprising a lid structure, package substrate comprising the same and semiconductor device |
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JPS53142176A (en) * | 1977-05-17 | 1978-12-11 | Nec Corp | Manufacture of semiconductor device |
JP2638883B2 (ja) * | 1988-02-18 | 1997-08-06 | 凸版印刷株式会社 | カラーフィルターの製造方法 |
JPH01243564A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 半導体装置の製造方法 |
EP0409004A3 (en) * | 1989-07-21 | 1991-04-03 | Kabushiki Kaisha Toshiba | Low-melting point glass sealed semiconductor device and method of manufacturing the same |
JPH0982844A (ja) * | 1995-09-20 | 1997-03-28 | Mitsubishi Electric Corp | 半導体モジュール基板及びその製造方法 |
JP3000083B2 (ja) * | 1998-06-24 | 2000-01-17 | 日本特殊陶業株式会社 | 電子部品容器の製造方法 |
JP2002026068A (ja) | 2000-07-04 | 2002-01-25 | Canon Inc | 固体撮像装置の製造方法及び製造装置 |
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JP4203367B2 (ja) * | 2003-04-24 | 2008-12-24 | 京セラ株式会社 | 半導体装置 |
JP2004356218A (ja) | 2003-05-27 | 2004-12-16 | Kyocera Corp | 半導体素子収納用パッケージおよび半導体装置 |
JP2007208045A (ja) * | 2006-02-02 | 2007-08-16 | Sony Corp | 撮像装置、カメラモジュール、電子機器および撮像装置の製造方法 |
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JP2009135353A (ja) * | 2007-12-03 | 2009-06-18 | Panasonic Corp | 半導体装置及びその製造に使用する樹脂接着材 |
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JP5595066B2 (ja) | 2009-03-25 | 2014-09-24 | 京セラ株式会社 | 撮像装置および撮像モジュール |
JP2011018747A (ja) | 2009-07-08 | 2011-01-27 | Olympus Corp | 撮像ユニット |
JP2011066091A (ja) | 2009-09-15 | 2011-03-31 | Olympus Corp | 撮像ユニット |
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