JP6148084B2 - Adsorption member - Google Patents

Adsorption member Download PDF

Info

Publication number
JP6148084B2
JP6148084B2 JP2013133323A JP2013133323A JP6148084B2 JP 6148084 B2 JP6148084 B2 JP 6148084B2 JP 2013133323 A JP2013133323 A JP 2013133323A JP 2013133323 A JP2013133323 A JP 2013133323A JP 6148084 B2 JP6148084 B2 JP 6148084B2
Authority
JP
Japan
Prior art keywords
region
convex portion
convex
respect
height direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013133323A
Other languages
Japanese (ja)
Other versions
JP2015008240A (en
Inventor
徹彌 井上
徹彌 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2013133323A priority Critical patent/JP6148084B2/en
Publication of JP2015008240A publication Critical patent/JP2015008240A/en
Application granted granted Critical
Publication of JP6148084B2 publication Critical patent/JP6148084B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)

Description

本発明は、例えば半導体集積回路または液晶表示装置等の製造工程において、シリコンウェハやガラス基板等の対象物に処理を施す際に対象物を吸着する吸着部材に関する。   The present invention relates to an adsorbing member that adsorbs an object when processing the object such as a silicon wafer or a glass substrate in a manufacturing process of a semiconductor integrated circuit or a liquid crystal display device, for example.

半導体集積回路の製造工程に用いられるシリコンウェハや、液晶表示装置の製造工程に用いられるガラス基板等の対象物は、製造工程に用いられる露光装置や検査装置等において、吸着部材に吸着されて処理が施される。   Objects such as silicon wafers used in the manufacturing process of semiconductor integrated circuits and glass substrates used in the manufacturing process of liquid crystal display devices are attracted to the adsorption member and processed in an exposure apparatus or an inspection apparatus used in the manufacturing process. Is given.

この吸着部材として、例えば特許文献１には、セラミックスからなる本体（基板）と、この本体の底部に設けられ、被吸着物（対象物）を支持する多数の支持突起（ピン）とを備えた真空チャック（吸着部材）が記載されている。   As this adsorbing member, for example, Patent Document 1 includes a main body (substrate) made of ceramics and a plurality of support protrusions (pins) provided on the bottom of the main body and supporting an object to be adsorbed (object). A vacuum chuck (suction member) is described.

ところで、吸着部材が対象物を吸着した際に、対象物はピンに支持されるとともに対象物と基板の底部との間には空間が形成される。この空間はピンと比較して熱を伝えにくい。したがって、例えば露光によって対象物に局所的に熱が加わった際に、この熱が基板を介して外部へ伝導しにくいため、対象物の温度分布が不均一となりやすい。その結果、対象物が局所的に熱膨張して歪みが生じやすくなり、ひいては対象物の処理精度が低下しやすい。   By the way, when the adsorption member adsorbs the object, the object is supported by the pins and a space is formed between the object and the bottom of the substrate. This space is less likely to transfer heat than pins. Therefore, for example, when heat is locally applied to the object by exposure, the heat is not easily transmitted to the outside through the substrate, so that the temperature distribution of the object tends to be non-uniform. As a result, the object tends to be locally thermally expanded and distorted, and as a result, the processing accuracy of the object tends to be lowered.

特開２００３−６８８３５号公報JP 2003-68835 A

本発明は、対象物の処理精度を高める要求に応える吸着部材を提供するものである。   The present invention provides an adsorbing member that meets the demand for increasing the processing accuracy of an object.

本発明の一態様における吸着部材によれば、対象物を吸着する吸着領域を有する基板を備え、前記基板は、前記吸着領域側の一主面に複数の柱状の凸部および該凸部同士の間に位置する底面を有する炭化珪素質焼結体からなる基体と、前記吸着領域を構成するとともに該基体の前記凸部および前記底面を被覆した炭化珪素膜からなる被膜とを有し、前記被膜は、前記凸部の頂面を被覆した第１部分と、前記凸部の側面を被覆した第２部分と、前記底面を被覆した第３部分とを有し、前記第２部分の前記第１部分側に配された一端部における前記基体の一主面に沿った方向の厚みは、前記第２部分の前記第３部分側に配された他端部における前記一主面に沿った方向の厚みよりも小さく、前記第２部分における前記一主面に沿った方向の厚みは、前記一端部から前記他端部に向かって大きくなっており、前記凸部の側面および前記第２部分の側面は、前記凸部の高さ方向に対して傾斜しており、前記高さ方向に対する前記第２部分の側面の傾斜角は、前記高さ方向に対する前記凸部の側面の傾斜角よりも大きい。 According to the suction member in one aspect of the present invention, the suction member includes a substrate having an adsorption region that adsorbs an object, and the substrate includes a plurality of columnar convex portions on one main surface of the adsorption region side and the convex portions. A substrate made of a silicon carbide sintered body having a bottom surface positioned therebetween, and a coating film made of a silicon carbide film that forms the adsorption region and covers the convex portion and the bottom surface of the substrate. Has a first portion covering the top surface of the convex portion, a second portion covering the side surface of the convex portion, and a third portion covering the bottom surface, and the first portion of the second portion. The thickness in the direction along one main surface of the base at the one end portion arranged on the partial side is the thickness along the one main surface in the other end portion arranged on the third portion side of the second portion. rather smaller than the thickness, the direction of the thickness along said one main surface in said second portion The side surface of the convex portion and the side surface of the second portion are inclined with respect to the height direction of the convex portion, and are increased from the one end portion toward the other end portion. The inclination angle of the side surface of the second portion is larger than the inclination angle of the side surface of the convex portion with respect to the height direction.

本発明の一態様における吸着部材によれば、第２部分の第１部分側に配された一端部の厚みは、第２部分の第３部分側に配された他端部の厚みよりも小さい。したがって、第２部分の他端部における厚みを大きくして空間の熱を基体へ効率よく伝導させることができる。それ故、対象物の温度分布をより均一なものとし、ひいては対象物の処理精度を高めることができる。   According to the suction member in one aspect of the present invention, the thickness of the one end portion disposed on the first portion side of the second portion is smaller than the thickness of the other end portion disposed on the third portion side of the second portion. . Therefore, the thickness at the other end of the second portion can be increased to efficiently conduct the heat of the space to the base. Therefore, the temperature distribution of the object can be made more uniform, and as a result, the processing accuracy of the object can be improved.

（ａ）は、本発明の一実施形態による吸着部材の一部を破断した斜視図であり、（ｂ）は、（ａ）の吸着部材に対象物を吸着させた状態における、（ａ）のＲ１部分を拡大した断面図であり、（ｃ）は、（ｂ）におけるピンの拡大図である。(A) is the perspective view which fractured | ruptured a part of adsorption member by one Embodiment of this invention, (b) of (a) in the state which made the adsorption | suction object adsorb | suck to the adsorption member of (a) It is sectional drawing which expanded R1 part, (c) is an enlarged view of the pin in (b).

以下に、本発明の一実施形態による吸着部材について、図１を参照しつつ詳細に説明する。   Below, the adsorption member by one Embodiment of this invention is demonstrated in detail, referring FIG.

本実施形態の吸着部材１は、半導体集積回路または液晶表示装置等の製造工程に用いられる露光装置や検査装置等の各種装置において、シリコンウェハやガラス基板等の対象物２を吸着して保持する吸着手段として用いられるものである。以下、本実施形態においては、半導体集積回路の製造工程に用いられる露光装置において、シリコンウェハである対象物２を吸着する吸着部材１について説明する。露光装置は、吸着部材１と光源とを備えており、光源から吸着部材１に吸着された対象物２に対して光が照射されることによって、対象物２が露光されて配線パターンが形成される。   The adsorbing member 1 of the present embodiment adsorbs and holds an object 2 such as a silicon wafer or a glass substrate in various apparatuses such as an exposure apparatus and an inspection apparatus used in a manufacturing process of a semiconductor integrated circuit or a liquid crystal display device. It is used as an adsorbing means. Hereinafter, in the present embodiment, an adsorption member 1 that adsorbs an object 2 that is a silicon wafer in an exposure apparatus used in a semiconductor integrated circuit manufacturing process will be described. The exposure apparatus includes an adsorbing member 1 and a light source, and the object 2 is exposed to light by irradiating the object 2 adsorbed to the adsorbing member 1 from the light source to form a wiring pattern. The

本実施形態の吸着部材１は、対象物２を真空吸着する真空チャックである。この吸着部材１は、図１（ａ）に示すように、対象物２が吸着される吸着領域３を有する基板４と、この基板４を厚み方向に貫通する排気孔（図示せず）とを備えている。この排気孔は、排気手段（図示せず）に接続されている。   The suction member 1 of this embodiment is a vacuum chuck that vacuum-sucks the object 2. As shown in FIG. 1A, the adsorption member 1 includes a substrate 4 having an adsorption region 3 on which an object 2 is adsorbed, and an exhaust hole (not shown) penetrating the substrate 4 in the thickness direction. I have. The exhaust hole is connected to exhaust means (not shown).

基板４は、図１（ｂ）に示すように、炭化珪素質焼結体からなる基体５と、吸着領域３を構成するとともに基体５の吸着領域３側の一主面６を被覆した炭化珪素膜からなる被膜７とを有する。本実施形態の基板４は、円板状である。この基板４の厚みは、例えば５ｍｍ以上１５ｍｍ以下である。また、基板４の幅（直径）は、例えば２００ｍｍ以上５００ｍｍ以下である。   As shown in FIG. 1B, the substrate 4 is composed of a base 5 made of a silicon carbide-based sintered body and a silicon carbide that forms an adsorption region 3 and covers one main surface 6 of the substrate 5 on the adsorption region 3 side. And a film 7 made of a film. The board | substrate 4 of this embodiment is disk shape. The thickness of the substrate 4 is, for example, 5 mm or more and 15 mm or less. Moreover, the width | variety (diameter) of the board | substrate 4 is 200 mm or more and 500 mm or less, for example.

基体５は、炭化珪素質焼結体からなることから、基板４の主要部をなし、基板４の剛性を高めるものである。また、炭化珪素は他のセラミックスと比較して熱伝導率が高いことから、基体５の熱伝導率を高めることができるため、例えば露光などによって対象物に局所的に加わった熱を、基体５を介して外部へ効率良く伝導させることができる。したがって、対象物２の温度分布をより均一なものとし、ひいては対象物２の処理精度を高めることができる。   Since the substrate 5 is made of a silicon carbide sintered body, it forms the main part of the substrate 4 and increases the rigidity of the substrate 4. In addition, since silicon carbide has a higher thermal conductivity than other ceramics, the thermal conductivity of the substrate 5 can be increased. Therefore, for example, heat locally applied to the object by exposure or the like is applied to the substrate 5. It can be efficiently conducted to the outside through the. Therefore, the temperature distribution of the object 2 can be made more uniform, and as a result, the processing accuracy of the object 2 can be improved.

この基体５は、図１（ｂ）および（ｃ）に示すように、吸着領域３側の一主面６に、複数の柱状の凸部８と、凸部８同士の間に位置する底面９と、底面９から突出してなるとともに複数の凸部８を取り囲む環状部（図示せず）とを具備している。凸部８は、頂面１０および側面１１を有しており、底面９から突出している。本実施形態の凸部８は、円錐台状である。凸部８の高さは、例えば１００μｍ以上５００μｍであり、凸部８の幅（直径）は、例えば１００μｍ以上５００μｍ以下である。また、本実施形態の底面９は平坦状である。   As shown in FIGS. 1B and 1C, the base body 5 has a plurality of columnar convex portions 8 on a main surface 6 on the suction region 3 side, and a bottom surface 9 positioned between the convex portions 8. And an annular portion (not shown) that protrudes from the bottom surface 9 and surrounds the plurality of convex portions 8. The convex portion 8 has a top surface 10 and a side surface 11 and protrudes from the bottom surface 9. The convex part 8 of this embodiment is truncated cone shape. The height of the convex portion 8 is, for example, 100 μm or more and 500 μm, and the width (diameter) of the convex portion 8 is, for example, not less than 100 μm and not more than 500 μm. Further, the bottom surface 9 of the present embodiment is flat.

被膜７は、炭化珪素質焼結体よりも表面のボイドが少ない炭化珪素膜からなることから、吸着領域３へのパーティクルの付着を低減し、このパーティクルによる対象物２の汚染を低減するものである。また、炭化珪素膜は、熱伝導の妨げとなりやすいボイドや結晶粒界が炭化珪素質焼結体よりも少ないことから、炭化珪素質焼結体よりも熱伝導率が高い。このような被膜７が基体５の一主面６を被覆しているため、例えば露光などによって対象物２に局所的に加わった熱を、被膜７および基体５を介して外部へ効率良く伝導させることができる。また、炭化珪素は他のセラミックスと比較して熱伝導率が高いことから、被膜７の熱伝導率を高めることができる。   Since the coating 7 is made of a silicon carbide film having fewer surface voids than the silicon carbide sintered body, it reduces the adhesion of particles to the adsorption region 3 and reduces the contamination of the object 2 by the particles. is there. The silicon carbide film has a higher thermal conductivity than the silicon carbide sintered body because the silicon carbide film has fewer voids and grain boundaries that tend to hinder heat conduction than the silicon carbide sintered body. Since the coating film 7 covers the main surface 6 of the substrate 5, heat applied locally to the object 2 by exposure or the like is efficiently conducted to the outside through the coating film 7 and the substrate 5. be able to. Moreover, since silicon carbide has a higher thermal conductivity than other ceramics, the thermal conductivity of the coating 7 can be increased.

また、被膜７は、凸部８、底面９および環状部を被覆している。また、被膜７は、凸部８の頂面１０を被覆した第１部分１２と、凸部８の側面１１を被覆した第２部分１３と、底面９を被覆した第３部分１４と、環状部を被覆した第４部分（図示せず）を有する。被膜７の厚みは、例えば１００μｍ以上５００μｍ以下である。   The coating 7 covers the convex portion 8, the bottom surface 9, and the annular portion. The coating 7 includes a first portion 12 that covers the top surface 10 of the convex portion 8, a second portion 13 that covers the side surface 11 of the convex portion 8, a third portion 14 that covers the bottom surface 9, and an annular portion. A fourth portion (not shown) coated with The thickness of the film 7 is, for example, 100 μm or more and 500 μm or less.

基板４の吸着領域３は、複数の柱状のピン１５と、ピン１５同士の間に位置する底部１６と、底部１６から突出してなるとともに複数のピン１５を取り囲むシール部１７とを具備している。ピン１５は、凸部８および被膜７の第１部分１２ならびに第２部分１３によって構成されている。底部１６は、底面９および被膜７の第３部分１４によって構成されている。シール部１７は、環状部および被膜７の第４部分によって構成されている。   The suction region 3 of the substrate 4 includes a plurality of columnar pins 15, a bottom portion 16 located between the pins 15, and a seal portion 17 that protrudes from the bottom portion 16 and surrounds the plurality of pins 15. . The pin 15 is constituted by the convex portion 8 and the first portion 12 and the second portion 13 of the coating 7. The bottom portion 16 is constituted by the bottom surface 9 and the third portion 14 of the coating 7. The seal portion 17 is constituted by an annular portion and a fourth portion of the coating 7.

前述した吸着部材１による対象物２の吸着は、例えば以下のように行なわれる。まず、対象物２を吸着領域３に載置する。この際、対象物２は複数のピン１５およびシール部１７によって支持され、対象物２と底部１６とシール部１７との間に空間１８が生じる。そして、排気手段を用いて、排気孔から空間１８の空気を排気することによって、空間１８が真空状態となり、対象物２が吸着領域３に吸着される。   For example, the adsorption of the object 2 by the adsorption member 1 described above is performed as follows. First, the object 2 is placed on the suction area 3. At this time, the object 2 is supported by the plurality of pins 15 and the seal portion 17, and a space 18 is generated between the object 2, the bottom portion 16, and the seal portion 17. Then, the air in the space 18 is exhausted from the exhaust hole using the exhaust means, so that the space 18 is in a vacuum state and the object 2 is adsorbed to the adsorption region 3.

ところで、例えば対象物２を露光する際に対象物２に局所的に熱が加わるが、対象物２と底部１６との間の空間１８は、凸部８および被膜７の第１部分１２ならびに第２部分１３によって構成されたピン１５と比較して熱を伝導しにくい。   By the way, for example, when the object 2 is exposed, heat is locally applied to the object 2, but the space 18 between the object 2 and the bottom 16 has the convex portion 8, the first portion 12 of the coating 7, and the first portion 12. Compared with the pin 15 constituted by the two portions 13, it is difficult to conduct heat.

一方、本実施形態の被膜７は、図１（ｂ）および（ｃ）に示すように、凸部８の頂面１０を被覆した第１部分１２と、凸部８の側面１１を被覆した第２部分１３と、底面９を被覆した第３部分１４とを有する。したがって、凸部８を構成する炭化珪素質焼結体の熱伝導率が被膜７を構成する炭化珪素膜の熱伝導率よりも低いため、対象物２から第１部分１２を介して基体５に向かって伝わる熱が、第１部分１２よりも凸部８において伝導しにくい。したがって、凸部８および被膜７の第１部分１２ならびに第２部分１３によって構成されるピン１５が伝導する熱量と、空間１８が伝導する熱量との差を低減し、対象物２における温度分布をより均一にすることができる。   On the other hand, as shown in FIGS. 1B and 1C, the coating film 7 of the present embodiment has a first portion 12 covering the top surface 10 of the convex portion 8 and a first portion 12 covering the side surface 11 of the convex portion 8. A second portion 13 and a third portion 14 covering the bottom surface 9; Therefore, since the thermal conductivity of the silicon carbide based sintered body constituting the convex portion 8 is lower than the thermal conductivity of the silicon carbide film constituting the coating 7, the object 2 is passed through the first portion 12 to the base 5. The heat transmitted toward the surface is less likely to be conducted at the convex portion 8 than at the first portion 12. Therefore, the difference between the amount of heat conducted by the pin 15 constituted by the convex portion 8 and the first portion 12 and the second portion 13 of the coating 7 and the amount of heat conducted by the space 18 is reduced, and the temperature distribution in the object 2 is reduced. It can be made more uniform.

さらに、本実施形態の被膜７において、第２部分１３の第１部分１２側に配された一端部１９における基体５の一主面６に沿った方向（ＸＹ平面方向）の厚みは、第２部分１３の第３部分１４側に配された他端部２０における一主面６に沿った方向の厚みよりも小さい。したがって、被膜７を構成する炭化珪素膜の熱伝導率が凸部８を構成する炭化珪素質焼結体の熱伝導率よりも高いことから、第２部分１３の一端部１９における厚みを小さくしてピン１５における熱の伝導を低減しつつ、第２部分１３の他端部２０における厚みを大きくして空間１８の熱を基体５へ効率よく伝導させることができる。それ故、対象物２の温度分布をより均一なものとし、ひいては対象物２の処理精度を高めることができる。   Furthermore, in the coating 7 of the present embodiment, the thickness in the direction (XY plane direction) along the one main surface 6 of the base 5 at the one end 19 disposed on the first portion 12 side of the second portion 13 is the second. The thickness of the other end portion 20 disposed on the third portion 14 side of the portion 13 is smaller than the thickness in the direction along the one principal surface 6. Therefore, since the thermal conductivity of the silicon carbide film constituting the coating 7 is higher than that of the silicon carbide sintered body constituting the convex portion 8, the thickness at the one end portion 19 of the second portion 13 is reduced. Thus, the heat at the pin 15 can be reduced, and the thickness at the other end 20 of the second portion 13 can be increased to efficiently conduct the heat in the space 18 to the base 5. Therefore, the temperature distribution of the object 2 can be made more uniform, and as a result, the processing accuracy of the object 2 can be improved.

また、第２部分１３の一端部１９における厚みが第２部分１３の他端部２０における厚みよりも小さいため、空間１８における対象物２側の領域を大きくし、空間１８の空気（流体）を流れやすくすることができる。したがって、空間１８の空気の排気および吸気を素早く行なうことができるため、吸着部材１による対象物２の吸着および脱着を素早く行なうことができ、露光装置のスループットを高めることができる。   Further, since the thickness at the one end portion 19 of the second portion 13 is smaller than the thickness at the other end portion 20 of the second portion 13, the region on the object 2 side in the space 18 is enlarged, and the air (fluid) in the space 18 is drawn. It can make it easier to flow. Therefore, since the air in the space 18 can be quickly exhausted and sucked, the object 2 can be adsorbed and desorbed quickly by the adsorbing member 1, and the throughput of the exposure apparatus can be increased.

また、第２部分１３の一端部１９における厚みが第２部分１３の他端部２０における厚みよりも小さいため、第２部分１３の一端部１９におけるパーティクルの吸着を低減し、このパーティクルによる対象物２の汚染を低減することができる。   Further, since the thickness at the one end portion 19 of the second portion 13 is smaller than the thickness at the other end portion 20 of the second portion 13, the adsorption of particles at the one end portion 19 of the second portion 13 is reduced, and the object by this particle is reduced. 2 contamination can be reduced.

また、第２部分１３の一端部１９における厚みが第２部分１３の他端部２０における厚
みよりも小さいため、ピン１５の頂面の幅（直径）を小さくすることができる。したがって、ピン１５の頂面と対象物２との接触面積を小さくし、ピン１５の頂面に付着したパーティクルによる対象物２の汚染を低減することができる。 Moreover, since the thickness at the one end portion 19 of the second portion 13 is smaller than the thickness at the other end portion 20 of the second portion 13, the width (diameter) of the top surface of the pin 15 can be reduced. Therefore, the contact area between the top surface of the pin 15 and the object 2 can be reduced, and contamination of the object 2 due to particles adhering to the top surface of the pin 15 can be reduced.

本実施形態において、第２部分１３における一主面６に沿った方向の厚みは、一端部１９から他端部２０に向かって大きくなっている。その結果、前述したように、空間１８の熱を基体５へ効率よく伝導させることができる。また、空間１８の空気（流体）を流れやすくすることができる。また、第２部分１３におけるパーティクルの吸着を低減することができる。   In the present embodiment, the thickness of the second portion 13 in the direction along the one principal surface 6 increases from the one end portion 19 toward the other end portion 20. As a result, as described above, the heat in the space 18 can be efficiently conducted to the base 5. Further, the air (fluid) in the space 18 can be easily flowed. Further, the adsorption of particles in the second portion 13 can be reduced.

本実施形態において、凸部８の側面１１および第２部分１３の側面２１は、凸部８の高さ方向（Ｚ方向）に対して傾斜しており、高さ方向に対する第２部分１３の側面２１の傾斜角は、高さ方向に対する凸部８の側面１１の傾斜角よりも大きい。その結果、凸部８の側面１１の傾斜角および凸部８の側面１１の傾斜角を適宜調節することによって、第２部分１３の一主面６に沿った方向の厚みを調節し、空間１８から基体５へ伝導させる熱の量を調節することができる。なお、傾斜角は、高さ方向と側面とがなす鋭角の角度をいう。   In the present embodiment, the side surface 11 of the convex portion 8 and the side surface 21 of the second portion 13 are inclined with respect to the height direction (Z direction) of the convex portion 8, and the side surface of the second portion 13 with respect to the height direction. The inclination angle 21 is larger than the inclination angle of the side surface 11 of the convex portion 8 with respect to the height direction. As a result, by appropriately adjusting the inclination angle of the side surface 11 of the convex portion 8 and the inclination angle of the side surface 11 of the convex portion 8, the thickness in the direction along the one principal surface 6 of the second portion 13 is adjusted, and the space 18 The amount of heat conducted from the substrate to the substrate 5 can be adjusted. The inclination angle refers to an acute angle formed by the height direction and the side surface.

本実施形態において、第１部分１２における一主面６に沿った方向の幅は、凸部８とは反対側の一端部２２から凸部８側の他端部２３に向かって大きくなっており、第１部分１２は、凸部８とは反対側に配された第１領域２４と、凸部８側に配された第２領域２５とを有し、第２領域２５の側面２６は、凸部８の高さ方向に対して傾斜しており、高さ方向に対する第２部分１３の側面２１の傾斜角は、高さ方向に対する第２領域２５の側面２６の傾斜角よりも大きい。その結果、第２領域２５の側面２６の傾斜角を小さくすることによって、第２部分１３よりも対象物２側に位置する第２領域２５の側面２６に対するパーティクルの吸着を低減し、このパーティクルによる対象物２の汚染を低減することができる。また、第２部分１３の側面２１の傾斜角を大きくすることによって、前述した如く、第２部分１３の一端部１９における厚みを第２部分１３の他端部２０における厚みよりも容易に小さくすることができる。   In the present embodiment, the width of the first portion 12 in the direction along the one principal surface 6 increases from the one end portion 22 on the side opposite to the convex portion 8 toward the other end portion 23 on the convex portion 8 side. The first portion 12 includes a first region 24 disposed on the side opposite to the convex portion 8 and a second region 25 disposed on the convex portion 8 side. A side surface 26 of the second region 25 is The inclination of the side surface 21 of the second portion 13 with respect to the height direction is larger than the inclination angle of the side surface 26 of the second region 25 with respect to the height direction. As a result, by reducing the inclination angle of the side surface 26 of the second region 25, the adsorption of particles to the side surface 26 of the second region 25 located closer to the object 2 than the second portion 13 is reduced. Contamination of the object 2 can be reduced. Further, by increasing the inclination angle of the side surface 21 of the second portion 13, the thickness at the one end portion 19 of the second portion 13 is easily made smaller than the thickness at the other end portion 20 of the second portion 13 as described above. be able to.

本実施形態において、第１領域２４の側面２７は、凸部８の高さ方向に対して傾斜しており、高さ方向に対する第２領域２５の側面２６の傾斜角は、高さ方向に対する第１領域２４の側面２７の傾斜角よりも大きい。その結果、第１領域２４の側面２７の傾斜角を小さくすることによって、第２領域２５よりも対象物２側に位置する第１領域２４の側面２７に対するパーティクルの吸着を低減し、このパーティクルによる対象物２の汚染を低減することができる。   In the present embodiment, the side surface 27 of the first region 24 is inclined with respect to the height direction of the convex portion 8, and the inclination angle of the side surface 26 of the second region 25 with respect to the height direction is the first angle with respect to the height direction. It is larger than the inclination angle of the side surface 27 of one region 24. As a result, by reducing the inclination angle of the side surface 27 of the first region 24, the adsorption of particles to the side surface 27 of the first region 24 located closer to the object 2 than the second region 25 is reduced. Contamination of the object 2 can be reduced.

本実施形態において、被膜７は、前述したように第１領域２４、第２領域２５および第２部分１３それぞれの側面の傾斜角が異なるため、ピン１５は、側面の傾斜角が異なる３つの段からなる形状（３段ピン）となる。このようにピン１５を３段ピンとすることによって、ピン１５の高さを大きくしつつ、ピン１５の頂面の幅（直径）を小さくすることができる。したがって、ピン１５の高さを大きくすることによって、空間１８の体積を増加させて、空間１８の空気を流れやすくすることができる。また、ピン１５の頂面の幅（直径）を小さくすることによって、ピン１５の頂面と対象物２との接触面積を低減して、パーティクルによる対象物２の汚染を低減することができる。   In the present embodiment, since the coating 7 has different inclination angles of the side surfaces of the first region 24, the second region 25, and the second portion 13 as described above, the pin 15 has three steps with different inclination angles of the side surfaces. It becomes the shape which consists of (3 step pin). Thus, by making the pin 15 into a three-stage pin, it is possible to reduce the width (diameter) of the top surface of the pin 15 while increasing the height of the pin 15. Therefore, by increasing the height of the pin 15, the volume of the space 18 can be increased and the air in the space 18 can easily flow. Further, by reducing the width (diameter) of the top surface of the pin 15, the contact area between the top surface of the pin 15 and the object 2 can be reduced, and contamination of the object 2 by particles can be reduced.

本実施形態において、被膜７は、ＣＶＤ膜である。その結果、ＣＶＤ膜は結晶成長した単結晶体であることから、多結晶体である炭化珪素質焼結体と比較して、熱伝導の妨げとなりやすいボイドや結晶粒界が少ないため、被膜７の熱伝導率を良好に高めることができる。   In the present embodiment, the coating 7 is a CVD film. As a result, since the CVD film is a single crystal that has been crystal-grown, it has fewer voids and crystal grain boundaries that tend to hinder thermal conduction than the polycrystalline silicon carbide sintered body. The thermal conductivity of can be improved satisfactorily.

本実施形態において、被膜７は、第２部分１３の側面２１と第２領域２５の側面２６との間に、一主面６に沿った第１段差部２８を有する。この第１段差部２８と第２部分１３の側面２１および第２領域２５の側面２６とがなす角部は、Ｒ形状である。その結果、第１段差部２８に付着したパーティクルを容易に洗浄することができる。   In the present embodiment, the coating 7 has a first step portion 28 along the one principal surface 6 between the side surface 21 of the second portion 13 and the side surface 26 of the second region 25. A corner portion formed by the first step portion 28, the side surface 21 of the second portion 13 and the side surface 26 of the second region 25 has an R shape. As a result, particles adhering to the first step portion 28 can be easily cleaned.

本実施形態において、被膜７は、第２領域２５の側面２６と第１領域２４の側面２７との間に、一主面６に沿った第２段差部２９を有する。この第２段差部２９と第２領域２５の側面２６および第１領域２４の側面２７とがなす角部は、Ｒ形状である。その結果、第２段差部２９に付着したパーティクルを容易に洗浄することができる。   In the present embodiment, the coating 7 has a second stepped portion 29 along one principal surface 6 between the side surface 26 of the second region 25 and the side surface 27 of the first region 24. A corner portion formed by the second step portion 29, the side surface 26 of the second region 25, and the side surface 27 of the first region 24 has an R shape. As a result, particles adhering to the second step portion 29 can be easily cleaned.

次に、前述した吸着部材１の製造方法について詳細に説明する。   Next, the manufacturing method of the adsorption member 1 described above will be described in detail.

（１）基体５を準備する。具体的には、例えば以下のように行なう。   (1) The base 5 is prepared. Specifically, for example, the following is performed.

まず、炭化珪素粉末に純水と有機バインダーとを加えた後、ボールミルで湿式混合してスラリーを作製する。次に、スラリーをスプレードライにて造粒する。次に、造粒した炭化珪素粒を種々の成形方法を用いて成形して成形体を作製した後、切削加工を用いて所望の形状の成形体を作製する。次に、この成形体を例えば１４００℃以上１８００℃以下で焼成して焼結体を作製した後、研削加工を用いて所望の形状の焼結体を作製する。次に、ブラスト加工を用いて焼結体の一主面に凸部８および底面９を形成する。このようにブラスト加工を用いて凸部８を形成しているため、凸部８は、基体５の一主面６側からその反対側に向かって幅が小さくなり、凸部８の側面１１は、高さ方向に対して傾斜する。   First, pure water and an organic binder are added to silicon carbide powder, and then wet-mixed with a ball mill to prepare a slurry. Next, the slurry is granulated by spray drying. Next, the granulated silicon carbide particles are molded using various molding methods to prepare a molded body, and then a molded body having a desired shape is manufactured using a cutting process. Next, this molded body is fired at, for example, 1400 ° C. or higher and 1800 ° C. or lower to prepare a sintered body, and then a sintered body having a desired shape is manufactured using grinding. Next, the convex part 8 and the bottom face 9 are formed on one main surface of the sintered body using blasting. Thus, since the convex part 8 is formed using blast processing, the width of the convex part 8 decreases from the one main surface 6 side of the base body 5 to the opposite side, and the side surface 11 of the convex part 8 is Inclined with respect to the height direction.

以上のようにして、基体５を作製することができる。   As described above, the substrate 5 can be manufactured.

（２）基体５の一主面６に被膜７を形成し、基板４を作製する。具体的には、例えば以下のように行なう。   (2) A film 7 is formed on one main surface 6 of the substrate 5 to produce the substrate 4. Specifically, for example, the following is performed.

まず、ＣＶＤ法を用いて、基体５の一主面６に炭化珪素膜からなる被膜７を形成し、被膜７で凸部８の頂面１０および側面１１を被覆する。次に、ブラスト加工を用いて被膜７に第１部分１２、第２部分１３および第３部分１４を形成し、ピン１５および底部１６を形成する。このブラスト加工において、砥粒の噴射圧、砥粒の粒径、ブラスト加工の回数などの各種条件を適宜調節することによって、所望の形状の被膜７およびピン１５を得ることができる。例えば、砥粒の噴射圧を小さくすることによって、第２部分１３の側面２１の高さ方向に対する傾斜角を大きくし、第２部分１３の一端部１９における厚みを、第２部分１３の他端部２０における厚みよりも小さくすることができる。   First, a film 7 made of a silicon carbide film is formed on one main surface 6 of the substrate 5 by CVD, and the top surface 10 and the side surface 11 of the convex portion 8 are covered with the film 7. Next, the 1st part 12, the 2nd part 13, and the 3rd part 14 are formed in the film 7 using a blast process, and the pin 15 and the bottom part 16 are formed. In this blasting process, the coating film 7 and the pin 15 having a desired shape can be obtained by appropriately adjusting various conditions such as the spray pressure of the abrasive grains, the grain size of the abrasive grains, and the number of times of blasting. For example, by reducing the spray pressure of the abrasive grains, the inclination angle of the side surface 21 of the second portion 13 with respect to the height direction is increased, and the thickness of the one end portion 19 of the second portion 13 is set to the other end of the second portion 13. It can be made smaller than the thickness in the portion 20.

以上のようにして、吸着部材１を作製することができる。   The adsorption member 1 can be produced as described above.

本発明は前述した実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良、組合せ等が可能である。   The present invention is not limited to the above-described embodiments, and various modifications, improvements, combinations, and the like can be made without departing from the scope of the present invention.

例えば、前述した実施形態においては吸着部材１として真空チャックを用いた構成を例に説明したが、吸着部材１として対象物２を静電吸着する静電チャックを用いても構わない。   For example, in the above-described embodiment, the configuration using the vacuum chuck as the suction member 1 has been described as an example. However, an electrostatic chuck that electrostatically attracts the object 2 may be used as the suction member 1.

また、前述した実施形態においては、基板４が円板状である構成を例に説明したが、基板４は板状であればよく、例えば対象物２としてガラス基板を用いる場合に基板４が四角板状であっても構わない。   In the above-described embodiment, the configuration in which the substrate 4 has a disk shape has been described as an example. However, the substrate 4 may have a plate shape. For example, when a glass substrate is used as the object 2, the substrate 4 has a square shape. It may be plate-shaped.

また、前述した実施形態においては、ピン１５を３段ピンとした構成を例に説明したが、ピン１５は３段ピンでなくてもよく、例えばピン１５を４段以上の多段ピンとしても構わない。   In the above-described embodiment, the configuration in which the pin 15 is a three-stage pin has been described as an example. However, the pin 15 may not be a three-stage pin. For example, the pin 15 may be a multistage pin having four or more stages. .

また、前述した実施形態においては、被膜７をＣＶＤ膜とした構成を例に説明したが、被膜７としてＣＶＤ法以外の方法で成膜したものを用いても構わない。   In the above-described embodiment, the configuration in which the coating film 7 is a CVD film has been described as an example. However, the coating film 7 formed by a method other than the CVD method may be used.

また、前述した実施形態においては、被膜７が第１段差部２８および第２段差部２９を有する構成を例に説明したが、被膜７は、第１段差部２８および第２段差部２９を有していなくても構わない。   In the embodiment described above, the configuration in which the coating 7 has the first step portion 28 and the second step portion 29 has been described as an example. However, the coating 7 has the first step portion 28 and the second step portion 29. You don't have to.

１ 吸着部材
２ 対象物
３ 吸着領域
４ 基板
５ 基体
６ 基体の一主面
７ 被膜
８ 凸部
９ 底面
１０ 凸部の頂面
１１ 凸部の側面
１２ 被膜の第１部分
１３ 被膜の第２部分
１４ 被膜の第３部分
１５ ピン
１６ 底部
１７ シール部
１８ 対象物と基板との間の空間
１９ 第２部分の一端部
２０ 第２部分の他端部
２１ 第２部分の側面
２２ 第１部分の一端部
２３ 第１部分の他端部
２４ 第１部分の第１領域
２５ 第１部分の第２領域
２６ 第２領域の側面
２７ 第１領域の側面
２８ 第１段差部
２９ 第２段差部 DESCRIPTION OF SYMBOLS 1 Adsorption member 2 Object 3 Adsorption area | region 4 Board | substrate 5 Base | substrate 6 One main surface of a base | substrate 7 Coating 8 Convex part 9 Bottom face 10 Top surface of a convex part 11 Side surface of a convex part 12 1st part of a film | membrane 13 2nd part 14 of a film | membrane 14 Third portion of coating 15 Pin 16 Bottom portion 17 Seal portion 18 Space between object and substrate 19 One end portion of second portion 20 Other end portion of second portion 21 Side surface of second portion 22 One end portion of first portion 23 Second end portion of first portion 24 First region of first portion 25 Second region of first portion 26 Side surface of second region 27 Side surface of first region 28 First step portion 29 Second step portion

Claims (4)

対象物を吸着する吸着領域を有する基板を備え、
前記基板は、前記吸着領域側の一主面に複数の柱状の凸部および該凸部同士の間に位置する底面を有する炭化珪素質焼結体からなる基体と、前記吸着領域を構成するとともに該基体の前記凸部および前記底面を被覆した炭化珪素膜からなる被膜とを有し、
前記被膜は、前記凸部の頂面を被覆した第１部分と、前記凸部の側面を被覆した第２部分と、前記底面を被覆した第３部分とを有し、
前記第２部分の前記第１部分側に配された一端部における前記基体の一主面に沿った方向の厚みは、前記第２部分の前記第３部分側に配された他端部における前記一主面に沿った方向の厚みよりも小さく、
前記第２部分における前記一主面に沿った方向の厚みは、前記一端部から前記他端部に向かって大きくなっており、
前記凸部の側面および前記第２部分の側面は、前記凸部の高さ方向に対して傾斜しており、
前記高さ方向に対する前記第２部分の側面の傾斜角は、前記高さ方向に対する前記凸部の側面の傾斜角よりも大きいことを特徴とする吸着部材。 A substrate having an adsorption area for adsorbing an object,
The substrate constitutes the adsorption region with a base body made of a silicon carbide sintered body having a plurality of columnar convex portions and a bottom surface located between the convex portions on one main surface of the adsorption region side. A coating made of a silicon carbide film covering the convex portion and the bottom surface of the substrate;
The coating has a first portion covering the top surface of the convex portion, a second portion covering the side surface of the convex portion, and a third portion covering the bottom surface,
The thickness in the direction along one main surface of the base at the one end portion arranged on the first portion side of the second portion is the thickness at the other end portion arranged on the third portion side of the second portion. rather smaller than in the direction of thickness along the one main surface,
The thickness of the second portion in the direction along the one principal surface is increased from the one end portion toward the other end portion,
The side surface of the convex portion and the side surface of the second portion are inclined with respect to the height direction of the convex portion,
The adsorption member according to claim 1, wherein an inclination angle of a side surface of the second portion with respect to the height direction is larger than an inclination angle of a side surface of the convex portion with respect to the height direction . 請求項１に記載の吸着部材において、
前記第１部分における前記一主面に沿った方向の幅は、前記凸部とは反対側の一端部から前記凸部側の他端部に向かって大きくなっており、
前記第１部分は、前記凸部とは反対側に配された第１領域と、前記凸部側に配された第２領域とを有し、
前記第２領域の側面は、前記凸部の高さ方向に対して傾斜しており、
前記高さ方向に対する前記第２部分の側面の傾斜角は、前記高さ方向に対する前記第２領域の側面の傾斜角よりも大きいことを特徴とする吸着部材。 The adsorption member according to claim 1 ,
The width in the direction along the one principal surface in the first portion is increased from one end portion on the opposite side to the convex portion toward the other end portion on the convex portion side,
The first portion includes a first region disposed on the side opposite to the convex portion, and a second region disposed on the convex portion side,
The side surface of the second region is inclined with respect to the height direction of the convex portion,
The suction member according to claim 1, wherein an inclination angle of the side surface of the second portion with respect to the height direction is larger than an inclination angle of the side surface of the second region with respect to the height direction. 請求項２に記載の吸着部材において、
前記第１領域の側面は、前記凸部の高さ方向に対して傾斜しており、
前記高さ方向に対する前記第２領域の側面の傾斜角は、前記高さ方向に対する前記第１領域の側面の傾斜角よりも大きいことを特徴とする吸着部材。 The adsorption member according to claim 2 ,
The side surface of the first region is inclined with respect to the height direction of the convex portion,
The adsorption member according to claim 1, wherein an inclination angle of the side surface of the second region with respect to the height direction is larger than an inclination angle of the side surface of the first region with respect to the height direction. 請求項１に記載の吸着部材において、
前記被膜は、ＣＶＤ膜であることを特徴とする吸着部材。 The adsorption member according to claim 1,
The adsorbing member, wherein the coating is a CVD film.
JP2013133323A 2013-06-26 2013-06-26 Adsorption member Active JP6148084B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013133323A JP6148084B2 (en) 2013-06-26 2013-06-26 Adsorption member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013133323A JP6148084B2 (en) 2013-06-26 2013-06-26 Adsorption member

Publications (2)

Publication Number Publication Date
JP2015008240A JP2015008240A (en) 2015-01-15
JP6148084B2 true JP6148084B2 (en) 2017-06-14

Family

ID=52338328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013133323A Active JP6148084B2 (en) 2013-06-26 2013-06-26 Adsorption member

Country Status (1)

Country Link
JP (1) JP6148084B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017170738A1 (en) * 2016-03-30 2017-10-05 京セラ株式会社 Suction member
US11955362B2 (en) * 2017-09-13 2024-04-09 Applied Materials, Inc. Substrate support for reduced damage substrate backside

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3582116B2 (en) * 1994-11-11 2004-10-27 住友金属工業株式会社 Manufacturing method of ceramic member for wafer holder
JPH10229115A (en) * 1997-02-14 1998-08-25 Sumitomo Metal Ind Ltd Vacuum chuck for wafer
JPH10242255A (en) * 1997-02-28 1998-09-11 Kyocera Corp Vacuum chuck device
JP2006305713A (en) * 2005-03-28 2006-11-09 Nikon Corp Suction apparatus, polishing device, semiconductor device and semiconductor device manufacturing method
JP4722006B2 (en) * 2006-02-23 2011-07-13 京セラ株式会社 Sample holder
JP4782744B2 (en) * 2007-08-24 2011-09-28 京セラ株式会社 Adsorption member, adsorption device, and adsorption method

Also Published As

Publication number Publication date
JP2015008240A (en) 2015-01-15

Similar Documents

Publication Publication Date Title
KR101142000B1 (en) Electrostatic chuck
JP6349228B2 (en) Electrostatic chuck and base member used for the electrostatic chuck
JP5063797B2 (en) Adsorption member, adsorption device, and adsorption method
JP6085152B2 (en) Vacuum chuck
JP4782744B2 (en) Adsorption member, adsorption device, and adsorption method
JP6092857B2 (en) Channel member, adsorption device and cooling device using the same
JP2008211098A (en) Vacuum suction apparatus, manufacturing method thereof and method of sucking object to be sucked
TW201810601A (en) Method and apparatus for stacking devices in an integrated circuit assembly
JP5261057B2 (en) Suction board and vacuum suction device
JP6154173B2 (en) Vacuum suction device and suction plate
JP6148084B2 (en) Adsorption member
KR100718017B1 (en) Vacuum Chuck
JP4703590B2 (en) Vacuum adsorption apparatus and adsorption method using the same
US20170084477A1 (en) Substrate support unit and substrate treatment apparatus comprising the same
JP6199578B2 (en) Channel member, vacuum suction device and cooling device using the same, and method for manufacturing channel member
JP6224330B2 (en) Suction member, vacuum suction device and cooling device using the same
JP2006128205A (en) Wafer supporting member
JP5202028B2 (en) Vacuum tweezers, substrate transfer apparatus and substrate processing apparatus using the same
JP2014090038A (en) Suction member
JP2004209633A (en) Apparatus for securing work substrate and method for manufacturing the same
WO2015029575A1 (en) Sample-retainer
KR100545670B1 (en) Vacuum chuck of semiconductor manufacturing equipment
JP5105971B2 (en) Vacuum tweezers, substrate transfer apparatus and substrate processing apparatus using the same
JP6169923B2 (en) Transfer arm and transfer device equipped with the same
JP5795272B2 (en) Method for manufacturing ceramic element

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161108

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161110

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170418

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170518

R150 Certificate of patent or registration of utility model

Ref document number: 6148084

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150