JP6145144B2 - 太陽電池および太陽電池の製造方法 - Google Patents
太陽電池および太陽電池の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 75
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 33
- 229920005591 polysilicon Polymers 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 46
- 239000002184 metal Substances 0.000 description 46
- 239000002019 doping agent Substances 0.000 description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 42
- 238000009792 diffusion process Methods 0.000 description 30
- 239000000377 silicon dioxide Substances 0.000 description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H01L31/02—Details
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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Description
なお、本願明細書に記載の実施形態によれば、以下の構成もまた開示される。
[項目1]
通常の運転の間、太陽に面し、太陽放射を収集する受光面と、前記受光面の反対側の裏面とを有する太陽電池であって、
N型シリコン基板と、
前記太陽電池の前記受光面側の前記N型シリコン基板上のテクスチャード表面と、
前記N型シリコン基板の前記テクスチャード表面を覆う反射防止層と、
前記N型シリコン基板との裏面接合を形成するP型ポリシリコンのエミッタと、
前記太陽電池の前記受光面から前記N型シリコン基板と電気的に接続する負極側金属コンタクトと、
前記太陽電池の前記裏面から前記P型ポリシリコンのエミッタと電気的に接続する正極側金属コンタクトと、
を備える、太陽電池。
[項目2]
前記反射防止層は、窒化ケイ素の層を含む、
項目1に記載の太陽電池。
[項目3]
前記P型ポリシリコンのエミッタを覆う誘電体層をさらに備える、
項目1に記載の太陽電池。
[項目4]
前記誘電体層は、二酸化ケイ素を含む、
項目3に記載の太陽電池。
[項目5]
前記誘電体層および前記P型ポリシリコンのエミッタを切断し、前記太陽電池の裏面側の前記N型シリコン基板の一部に切り込みをいれるトレンチをさらに備える、
項目3に記載の太陽電池。
[項目6]
前記正極側金属コンタクトは、誘電体層とともに赤外線反射層を形成する金属を含む、
項目1に記載の太陽電池。
[項目7]
前記正極側金属コンタクトは、二酸化ケイ素を含む誘電体層とともに赤外線反射層を形成する銀を含む、
項目1に記載の太陽電池。
[項目8]
前記負極側金属コンタクトは、前記N型シリコン基板に通じるコンタクトホールの内部に形成される、
項目1に記載の太陽電池。
[項目9]
通常の運転の間、太陽に面し、太陽放射を収集する受光面と、前記受光面の反対側の裏面とを有する太陽電池を製造する方法であって、
前記太陽電池の前記裏面側のN型シリコン基板の裏面を覆うポリシリコンの層を形成する段階と、
前記ポリシリコンの層を覆うP型ドーパント源を形成する段階と、
前記P型ドーパント源を覆うキャッピング層を形成する段階と、
前記P型ドーパント源から前記ポリシリコンの層にP型ドーパントを拡散させ、前記N型シリコン基板との裏面接合を形成する段階と、
前記N型シリコン基板の前記受光面側の表面にN型ドーパントを拡散させる段階と、
を備える、
太陽電池を製造する方法。
[項目10]
前記P型ドーパント源が、ホウケイ酸ガラスを含む、
項目9に記載の太陽電池を製造する方法。
[項目11]
前記N型シリコン基板の前記受光面側の表面にN型ドーパントを拡散させる段階は、
前記N型シリコン基板を覆うN型ドーパント源を形成する段階と、
前記N型ドーパント源から前記N型シリコン基板の内部にN型ドーパントを拡散させる段階と、
を含む、
項目9に記載の太陽電池を製造する方法。
[項目12]
前記N型ドーパント源は、リンがドープされた二酸化ケイ素を含む、
項目11に記載の太陽電池を製造する方法。
[項目13]
前記N型シリコン基板の前記受光面側の表面をテクスチャリングする段階と、
前記N型シリコン基板のテクスチャリングされた前記受光面側の表面を覆う反射防止層を形成する段階と、
をさらに備える、
項目9に記載の太陽電池を製造する方法。
[項目14]
前記反射防止層は、窒化ケイ素を含む、
項目13に記載の太陽電池を製造する方法。
[項目15]
前記P型ドーパント源から前記ポリシリコンの層へのP型ドーパントの前記拡散、および、N型ドーパントの前記N型シリコン基板の前記受光面側の表面への前記拡散は、インサイチュで(in situ)実施される、
項目9に記載の太陽電池を製造する方法。
[項目16]
前記キャッピング層は、ドープされていない二酸化ケイ素を含む、
項目9に記載の太陽電池を製造する方法。
[項目17]
通常の運転の間、太陽に面し、太陽放射を収集する受光面と、前記受光面の反対側の裏面とを有する太陽電池であって、
受光面側のテクスチャード表面を有する基板と、
前記基板の裏面側の表面を覆って形成され、前記基板と裏面接合を形成するエミッタ層と、
前記太陽電池の前記受光面側で、前記基板と電気的に接続する第1の金属コンタクトと、
前記太陽電池の前記裏面側で、前記エミッタ層と電気的に接続する第2の金属コンタクトと、
を備え、
前記第1の金属コンタクトおよび前記第2の金属コンタクトは、外部の電気回路が前記太陽電池を動力源とすることができるように構成される、
太陽電池。
[項目18]
前記基板の前記受光面側のテクスチャード表面を覆う反射防止層をさらに備える、
項目17に記載の太陽電池。
[項目19]
前記基板は、N型シリコン基板を含み、
前記エミッタ層は、P型にドープされたポリシリコンを含む、
項目17に記載の太陽電池。
[項目20]
前記第2の金属コンタクトは、二酸化ケイ素の層を覆って形成される銀を含む、
項目17に記載の太陽電池。
Claims (10)
- 基板と、
前記基板上に設けられた第1のトンネル誘電体と、
前記第1のトンネル誘電体上に設けられたエミッタと、
前記基板の表面上に設けられた表面電極と、
前記基板の裏面上に設けられた裏面電極と
を備え、
前記基板の表面において、前記基板は、他の領域に比べてより高濃度の不純物ドープ領域を有し、
前記表面電極は、より高濃度の前記不純物ドープ領域に電気的に接続されている
太陽電池。 - 前記エミッタは、ポリシリコンのエミッタである、
請求項1に記載の太陽電池。 - 前記基板は、単結晶シリコンの基板である、
請求項1または2に記載の太陽電池。 - 前記第1のトンネル誘電体はトンネル酸化物である、
請求項1から3のいずれか一項に記載の太陽電池。 - 前記エミッタは、前記基板の前記裏面上に設けられている、
請求項1から4のいずれか一項に記載の太陽電池。 - 前記第1のトンネル誘電体に比べて前記基板の反対側に設けられた第2のトンネル誘電体をさらに備える、
請求項1から5のいずれか一項に記載の太陽電池。 - 前記裏面電極は銀を含む、
請求項1から6のいずれか一項に記載の太陽電池。 - 太陽電池の製造方法であって、
基板の表面上に接して第1のトンネル誘電体を形成する段階と、
前記基板の裏面上に接して第2のトンネル誘電体を形成する段階と、
前記第1のトンネル誘電体または前記第2のトンネル誘電体上にエミッタを形成する段階と、
前記太陽電池の表面に接して表面側電極を形成する段階と、
前記太陽電池の裏面に接して裏面側電極を形成する段階と
を備え、
前記基板の表面において、前記基板は、他の領域に比べてより高濃度の不純物ドープ領域を有し、
前記表面側電極は、より高濃度の前記不純物ドープ領域に電気的に接続されている
太陽電池の製造方法。 - 前記エミッタを形成する段階は、ポリシリコンのエミッタを形成する段階有する
請求項8に記載の太陽電池の製造方法。 - 前記エミッタを形成する段階は、前記第2のトンネル誘電体上に接して第1のシリコン層を形成する段階を有する
請求項8または9に記載の太陽電池の製造方法。
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US12/070,742 US8222516B2 (en) | 2008-02-20 | 2008-02-20 | Front contact solar cell with formed emitter |
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JP2014078707A Active JP5806360B2 (ja) | 2008-02-20 | 2014-04-07 | エミッタを有するフロントコンタクト型太陽電池 |
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JP2014078707A Active JP5806360B2 (ja) | 2008-02-20 | 2014-04-07 | エミッタを有するフロントコンタクト型太陽電池 |
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EP (4) | EP4345921A3 (ja) |
JP (3) | JP5572895B2 (ja) |
KR (1) | KR101462709B1 (ja) |
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JP2014150276A (ja) | 2014-08-21 |
US8878053B2 (en) | 2014-11-04 |
JP5806360B2 (ja) | 2015-11-10 |
EP4345921A2 (en) | 2024-04-03 |
JP2016006907A (ja) | 2016-01-14 |
WO2009105314A1 (en) | 2009-08-27 |
US20090205712A1 (en) | 2009-08-20 |
JP5572895B2 (ja) | 2014-08-20 |
US20230021009A1 (en) | 2023-01-19 |
EP2245671A1 (en) | 2010-11-03 |
JP2011512689A (ja) | 2011-04-21 |
EP2245671A4 (en) | 2015-11-25 |
EP4345921A3 (en) | 2024-07-03 |
EP4343861A2 (en) | 2024-03-27 |
US20190393368A1 (en) | 2019-12-26 |
US8222516B2 (en) | 2012-07-17 |
EP3425682A1 (en) | 2019-01-09 |
US20150083215A1 (en) | 2015-03-26 |
KR20100118579A (ko) | 2010-11-05 |
US20140038338A1 (en) | 2014-02-06 |
KR101462709B1 (ko) | 2014-11-18 |
EP2245671B1 (en) | 2018-07-25 |
CN201812825U (zh) | 2011-04-27 |
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