JP6141879B2 - 吸着部材およびそれを用いた吸着装置 - Google Patents
吸着部材およびそれを用いた吸着装置 Download PDFInfo
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- JP6141879B2 JP6141879B2 JP2014554302A JP2014554302A JP6141879B2 JP 6141879 B2 JP6141879 B2 JP 6141879B2 JP 2014554302 A JP2014554302 A JP 2014554302A JP 2014554302 A JP2014554302 A JP 2014554302A JP 6141879 B2 JP6141879 B2 JP 6141879B2
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- protrusion
- adsorption
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- top surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
以下に、本発明の第1実施形態による吸着部材について、図1ないし図3を参照しつつ詳細に説明する。
次に、本発明の第2実施形態による吸着部材を、図6を参照しつつ詳細に説明する。なお、前述した第1実施形態と同様の構成に関しては、記載を省略する。
2 対象物
3 吸着面
4 基体
5 被膜
6 環状部
7 底面
8 突起部
9 空間
10 液体
11 突起部の頂面
12 液体の側面
13 突起部の側面
14 底面における突起部の近傍領域
15 基体用焼結体
16 レジスト
17 成膜用マスク
18 露出領域
19 凸部
20 介在層
Claims (7)
- 対象物の形状に対応する環状部、該環状部の内側に位置する底面および該底面から突出した柱状の複数の突起部を有するとともに、前記環状部内で前記対象物を複数の前記突起部で支持して吸着する吸着面を具備したセラミック焼結体からなる基体と、
該基体よりも親水性が高い被膜とを備え、
該被膜は、前記突起部の頂面および前記突起部の側面に位置せず、前記底面における前記突起部の近傍領域以外の領域に位置し、
前記突起部の前記頂面の算術平均粗さ(Ra)は前記底面の算術平均粗さ(Ra)よりも小さいことを特徴とする吸着部材。 - 請求項1に記載の吸着部材において、
前記被膜は、珪素または酸化珪素からなることを特徴とする吸着部材。 - 請求項1に記載の吸着部材において、
前記被膜は、無機物からなることを特徴とする吸着部材。 - 請求項3に記載の吸着部材において、
前記被膜は、酸化物からなることを特徴とする吸着部材。 - 請求項1に記載の吸着部材と、該吸着部材の前記底面と前記対象物との間に液体を供給する液体供給部材とを備えたことを特徴とする吸着装置。
- 対象物の形状に対応する環状部、該環状部の内側に位置する底面および該底面から突出した柱状の複数の突起部を有するとともに、前記環状部内で前記対象物を複数の前記突起部で支持して吸着する吸着面を具備したセラミック焼結体からなる基体と、
珪素または酸化珪素からなる被膜とを備え、
該被膜は、前記突起部の頂面および前記突起部の側面に位置せず、前記底面における前記突起部の近傍領域以外の領域に位置し、
前記突起部の前記頂面の算術平均粗さ(Ra)は前記底面の算術平均粗さ(Ra)よりも小さいことを特徴とする吸着部材。 - 請求項6に記載の吸着部材と、該吸着部材の前記底面と前記対象物との間に液体を供給する液体供給部材とを備えたことを特徴とする吸着装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012281259 | 2012-12-25 | ||
JP2012281259 | 2012-12-25 | ||
PCT/JP2013/083171 WO2014103714A1 (ja) | 2012-12-25 | 2013-12-11 | 吸着部材およびそれを用いた吸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014103714A1 JPWO2014103714A1 (ja) | 2017-01-12 |
JP6141879B2 true JP6141879B2 (ja) | 2017-06-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014554302A Active JP6141879B2 (ja) | 2012-12-25 | 2013-12-11 | 吸着部材およびそれを用いた吸着装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9786538B2 (ja) |
EP (1) | EP2940724B1 (ja) |
JP (1) | JP6141879B2 (ja) |
WO (1) | WO2014103714A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11172569B2 (en) * | 2013-12-31 | 2021-11-09 | Tai-Saw Technology Co., Ltd. | Strip for an electronic device and manufacturing method thereof |
WO2017071900A1 (en) * | 2015-10-29 | 2017-05-04 | Asml Netherlands B.V. | Lithographic apparatus substrate table and method of loading a substrate |
EP3399544B1 (en) * | 2017-05-04 | 2022-04-13 | IMEC vzw | Selective deposition of dielectric materials |
CN109390268B (zh) * | 2017-08-10 | 2023-02-24 | 台湾积体电路制造股份有限公司 | 具有微粒凹口的夹盘的晶圆台、处理工具与使用晶圆台的方法 |
JP7083080B2 (ja) * | 2018-01-11 | 2022-06-10 | 株式会社日立ハイテク | プラズマ処理装置 |
JP2019151896A (ja) * | 2018-03-05 | 2019-09-12 | 日本特殊陶業株式会社 | SiC部材及びこれからなる基板保持部材並びにこれらの製造方法 |
JP7166730B2 (ja) * | 2018-12-11 | 2022-11-08 | 株式会社ディスコ | 被加工物の加工方法 |
JP7166729B2 (ja) * | 2018-12-11 | 2022-11-08 | 株式会社ディスコ | 被加工物の加工方法 |
JP7184621B2 (ja) * | 2018-12-12 | 2022-12-06 | 株式会社ディスコ | 剥離方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000311933A (ja) * | 1999-04-27 | 2000-11-07 | Canon Inc | 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法 |
JP4502746B2 (ja) * | 2004-08-26 | 2010-07-14 | 京セラ株式会社 | 液晶基板保持盤とその製造方法 |
TWI541615B (zh) * | 2007-07-13 | 2016-07-11 | 瑪波微影Ip公司 | 在微影裝置中交換晶圓的方法 |
JP2009060035A (ja) * | 2007-09-03 | 2009-03-19 | Shinko Electric Ind Co Ltd | 静電チャック部材、その製造方法及び静電チャック装置 |
JP4418032B2 (ja) * | 2007-09-11 | 2010-02-17 | キヤノンアネルバ株式会社 | 静電チャック |
EP2399279B1 (en) | 2009-02-22 | 2018-10-31 | Mapper Lithography IP B.V. | Substrate support structure, clamp preparation unit, and lithography system |
GB2469112A (en) | 2009-04-03 | 2010-10-06 | Mapper Lithography Ip Bv | Wafer support using controlled capillary liquid layer to hold and release wafer |
JP5597524B2 (ja) * | 2010-11-29 | 2014-10-01 | 京セラ株式会社 | 載置用部材およびその製造方法 |
NL2007768A (en) * | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
-
2013
- 2013-12-11 JP JP2014554302A patent/JP6141879B2/ja active Active
- 2013-12-11 WO PCT/JP2013/083171 patent/WO2014103714A1/ja active Application Filing
- 2013-12-11 EP EP13868287.7A patent/EP2940724B1/en active Active
- 2013-12-13 US US14/655,318 patent/US9786538B2/en active Active
Also Published As
Publication number | Publication date |
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US9786538B2 (en) | 2017-10-10 |
EP2940724A1 (en) | 2015-11-04 |
US20150357220A1 (en) | 2015-12-10 |
JPWO2014103714A1 (ja) | 2017-01-12 |
WO2014103714A1 (ja) | 2014-07-03 |
EP2940724A4 (en) | 2016-09-14 |
EP2940724B1 (en) | 2020-05-06 |
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