JP6134119B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6134119B2 JP6134119B2 JP2012222724A JP2012222724A JP6134119B2 JP 6134119 B2 JP6134119 B2 JP 6134119B2 JP 2012222724 A JP2012222724 A JP 2012222724A JP 2012222724 A JP2012222724 A JP 2012222724A JP 6134119 B2 JP6134119 B2 JP 6134119B2
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 96
- 230000004888 barrier function Effects 0.000 description 46
- 239000011229 interlayer Substances 0.000 description 19
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
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- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 6
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- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
その他の課題と新規な特徴は、本明細書の記述及び添付図面から明らかになるであろう。
図1は、第1の実施形態に係る半導体装置SDの構成を示す平面図である。図2は、図1のA−A´断面図である。図3は、図1からドレイン電極DRE、ドレインパッドDRP、ソース電極SOE、及びソースパッドSOPを取り除いた図である。図2に示すように、半導体装置SDは、基板SUB1、トランジスタSEL、及び埋込電極BEを有している。
図12は、第2の実施形態に係る半導体装置SDの構成を示す平面図である。本実施形態に係る半導体装置SDは、以下の点を除いて、第1の実施形態に係る半導体装置SDと同様の構成である。
図15は、第3の実施形態に係る半導体装置SDが有する回路の回路図である。本図に示す回路は、DC/DCコンバータであり、第1のトランジスタSEL及び第2のトランジスタSELが直列に接続されている。そして2つのトランジスタSELには、いずれもショットキーバリアダイオードSBDが逆方向に並列に接続されている。なお、DC/DCコンバータの出力端子は、第1のトランジスタSELと第2のトランジスタSELの接続部分に接続している。また、DC/DCコンバータの出力端子と接地端子の間には、容量素子Cが接続されている。なお、トランジスタSEL及びショットキーバリアダイオードSBDの構成は、第1の実施形態又は第2の実施形態と同様である。
BE 埋込電極
BEL 裏面電極
BUF バッファ層
CNL チャネル層
CON コンタクト
DRE ドレイン電極
DRP ドレインパッド
EA 素子形成領域
EI 素子分離領域
EPI エピタキシャルシリコン層
GE ゲート電極
GEI ゲート配線
GEP ゲートパッド
GINS ゲート絶縁膜
INSL 層間絶縁膜
INS 絶縁膜
SBD ショットキーバリアダイオード
SD 半導体装置
SEL トランジスタ
SEM 第1導電型層
SOE ソース電極
SOP ソースパッド
SUB1 基板
SUB2 基板
Claims (8)
- ベース層、前記ベース層上に形成されたバッファ層、及び前記バッファ層上に形成された化合物半導体層を有する基板と、
前記化合物半導体層にチャネルが形成され、ドレイン、ゲート電極、及びソースを有するトランジスタと、
前記化合物半導体層及び前記バッファ層に埋め込まれ、前記ドレイン、前記ゲート電極、及び前記ソースが並んでいる第1方向において、前記ゲート電極を基準にしたときに少なくとも一部が前記ソースとは逆側に位置する埋込電極と、
を備え、
前記埋込電極は前記ソースに接続されており、
前記バッファ層は、前記化合物半導体層側に位置する第1表面と、前記ベース層側に位置する第2表面と、を有し、
前記埋込電極の底面は、前記化合物半導体層から前記ベース層に向かう方向において、前記第1表面と前記第2表面の間に位置し、
前記埋込電極と前記化合物半導体層との界面がショットキー接続を構成している半導体装置。 - 請求項1に記載の半導体装置において、
前記第1方向において、前記埋込電極から前記ドレインまでの距離は、前記ドレインから前記ゲート電極までの距離よりも短い半導体装置。 - 請求項1に記載の半導体装置において、
前記第1方向において、前記ドレインは前記埋込電極と前記ゲート電極の間に位置している半導体装置。 - 請求項3に記載の半導体装置において、
前記第1方向において、第1の前記トランジスタと第2の前記トランジスタが並んでかつ逆向きに配置されており、
前記埋込電極は、前記第1のトランジスタの前記ドレインと、前記第2のトランジスタの前記ドレインの間に位置している半導体装置。 - 請求項1に記載の半導体装置において、
前記第1方向において、前記埋込電極は前記ドレインと前記ゲート電極の間に位置している半導体装置。 - 請求項5に記載の半導体装置において、
前記ゲート電極は、前記第1方向とは直交する第2方向に延伸しており、かつ複数に分断されており、
前記ゲート電極より上層に形成されたゲート配線と、
前記ゲート配線を前記分断されているゲート電極の各々に接続する複数のコンタクトと、
を備え、
前記埋込電極は、前記第2方向では前記分断されているゲート電極の間に位置しており、かつ前記第1方向では一部が前記ゲート電極と重なっている半導体装置。 - 請求項1に記載の半導体装置において、
前記化合物半導体層はGa及びNを含有しており、
前記バッファ層は、AlN層とGaN層を繰り返し積層した構造であり、
前記埋込電極の先端は、少なくとも最上層の前記AlN層に入り込んでいる半導体装置。 - 請求項1に記載の半導体装置において、
前記埋込電極は、不純物が導入された半導体により形成されている半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012222724A JP6134119B2 (ja) | 2012-10-05 | 2012-10-05 | 半導体装置 |
US14/038,327 US9153683B2 (en) | 2012-10-05 | 2013-09-26 | Semiconductor device |
CN201310462189.1A CN103715254B (zh) | 2012-10-05 | 2013-09-30 | 半导体器件 |
US14/837,373 US20150364467A1 (en) | 2012-10-05 | 2015-08-27 | Semiconductor device |
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JP2012222724A JP6134119B2 (ja) | 2012-10-05 | 2012-10-05 | 半導体装置 |
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JP2014075502A JP2014075502A (ja) | 2014-04-24 |
JP6134119B2 true JP6134119B2 (ja) | 2017-05-24 |
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US (2) | US9153683B2 (ja) |
JP (1) | JP6134119B2 (ja) |
CN (1) | CN103715254B (ja) |
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JP2016063167A (ja) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
DE112015007227T5 (de) * | 2015-12-24 | 2018-09-13 | Intel Corporation | Kontaktstruktur mit niedriger Schottky-Barriere für Ge-NMOS |
JP2019021753A (ja) * | 2017-07-14 | 2019-02-07 | トヨタ自動車株式会社 | ゲートスイッチング素子とその製造方法 |
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JP4850993B2 (ja) | 2000-01-25 | 2012-01-11 | 古河電気工業株式会社 | 半導体装置およびその製造方法 |
US20010015437A1 (en) | 2000-01-25 | 2001-08-23 | Hirotatsu Ishii | GaN field-effect transistor, inverter device, and production processes therefor |
JP5130641B2 (ja) * | 2006-03-31 | 2013-01-30 | サンケン電気株式会社 | 複合半導体装置 |
WO2005096365A1 (ja) * | 2004-03-30 | 2005-10-13 | Nec Corporation | 半導体装置 |
JP4389935B2 (ja) * | 2004-09-30 | 2009-12-24 | サンケン電気株式会社 | 半導体装置 |
JP5025108B2 (ja) | 2005-08-24 | 2012-09-12 | 株式会社東芝 | 窒化物半導体素子 |
US7285807B2 (en) * | 2005-08-25 | 2007-10-23 | Coldwatt, Inc. | Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same |
JP5319084B2 (ja) * | 2007-06-19 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2009218528A (ja) * | 2008-03-13 | 2009-09-24 | Furukawa Electric Co Ltd:The | GaN系電界効果トランジスタ |
JP5325534B2 (ja) * | 2008-10-29 | 2013-10-23 | 株式会社東芝 | 窒化物半導体素子 |
JP5577713B2 (ja) * | 2010-01-20 | 2014-08-27 | 日本電気株式会社 | 電界効果トランジスタ、電子装置、電界効果トランジスタの製造方法及び使用方法 |
JP5056883B2 (ja) * | 2010-03-26 | 2012-10-24 | サンケン電気株式会社 | 半導体装置 |
JP5548906B2 (ja) * | 2010-09-14 | 2014-07-16 | 古河電気工業株式会社 | 窒化物系半導体装置 |
JP2012084653A (ja) * | 2010-10-08 | 2012-04-26 | Advanced Power Device Research Association | 半導体装置およびその製造方法 |
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2012
- 2012-10-05 JP JP2012222724A patent/JP6134119B2/ja active Active
-
2013
- 2013-09-26 US US14/038,327 patent/US9153683B2/en active Active
- 2013-09-30 CN CN201310462189.1A patent/CN103715254B/zh not_active Expired - Fee Related
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2015
- 2015-08-27 US US14/837,373 patent/US20150364467A1/en not_active Abandoned
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US20140097445A1 (en) | 2014-04-10 |
US9153683B2 (en) | 2015-10-06 |
CN103715254B (zh) | 2018-10-12 |
CN103715254A (zh) | 2014-04-09 |
JP2014075502A (ja) | 2014-04-24 |
US20150364467A1 (en) | 2015-12-17 |
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