JP6110403B2 - 共振器を作成する方法 - Google Patents
共振器を作成する方法 Download PDFInfo
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- JP6110403B2 JP6110403B2 JP2014548036A JP2014548036A JP6110403B2 JP 6110403 B2 JP6110403 B2 JP 6110403B2 JP 2014548036 A JP2014548036 A JP 2014548036A JP 2014548036 A JP2014548036 A JP 2014548036A JP 6110403 B2 JP6110403 B2 JP 6110403B2
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- 238000000034 method Methods 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000013043 chemical agent Substances 0.000 description 13
- 230000008901 benefit Effects 0.000 description 12
- 238000003486 chemical etching Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
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- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000011009 synthetic ruby Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
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- C04B35/62884—Coating the powders or the macroscopic reinforcing agents by gas phase techniques
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
- F21V17/02—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages with provision for adjustment
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/066—Manufacture of the spiral spring
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- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/32—Component parts or constructional details, e.g. collet, stud, virole or piton
- G04B17/34—Component parts or constructional details, e.g. collet, stud, virole or piton for fastening the hairspring onto the balance
- G04B17/345—Details of the spiral roll
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- G—PHYSICS
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- G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
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- G04C3/08—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means wherein movement is regulated by a mechanical oscillator other than a pendulum or balance, e.g. by a tuning fork, e.g. electrostatically
- G04C3/12—Electromechanical clocks or watches independent of other time-pieces and in which the movement is maintained by electric means wherein movement is regulated by a mechanical oscillator other than a pendulum or balance, e.g. by a tuning fork, e.g. electrostatically driven by piezoelectric means; driven by magneto-strictive means
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- G—PHYSICS
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- G04F—TIME-INTERVAL MEASURING
- G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
- G04F5/04—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses
- G04F5/06—Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses using piezoelectric resonators
- G04F5/063—Constructional details
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- G—PHYSICS
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- G04G—ELECTRONIC TIME-PIECES
- G04G17/00—Structural details; Housings
- G04G17/02—Component assemblies
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
- H03H9/215—Crystal tuning forks consisting of quartz
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
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- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
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Description
Claims (24)
- 基材に共振器(400)を製造する方法であって、
(a)前記少なくとも1つの領域をより選択的にするために、前記基材の少なくとも1つの領域の構造を加工するステップと、
(b)共振器を選択的に製造するために、前記少なくとも1つの領域をエッチングするステップと
を有し、
前記共振器(400)は、スパイラル体を形成するように渦巻き状の棒体によって形成される構成体(100)につながれた慣性ブロックを有する共振器(400)であり、
前記構成体は、少なくとも1つの中空部分(310)を有し、前記構成体の剛性を局所的に変更し、前記共振器の周波数の調整及び/又は等時性ずれの調整を行うことができる
ことを特徴にする製造方法。 - (c)前記基材から前記共振器を分離するステップをさらに有する
ことを特徴にする請求項1に記載の製造方法。 - 前記少なくとも1つの領域の構造は、レーザー(L)によって加工される
ことを特徴にする請求項1又は2に記載の製造方法。 - 前記基材は、レーザー波長に対して透過性を有する材料で作られる
ことを特徴にする前の請求項のいずれかに記載の製造方法。 - 前記レーザー(L)のパルス持続時間は、1フェムト秒〜1ピコ秒の範囲内である
ことを特徴にする請求項3又は4に記載の製造方法。 - 前記基材は、単結晶材料で作られる
ことを特徴にする請求項4に記載の製造方法。 - 前記基材は、多結晶材料で作られる
ことを特徴にする請求項4に記載の製造方法。 - 前記基材は、高分子で作られる
ことを特徴にする請求項4に記載の製造方法。 - 前記基材は、セラミック又はガラスのようなアモルファス物質で作られる
ことを特徴にする請求項4に記載の製造方法。 - 前記少なくとも1つの中空部分は、少なくとも2つの平行な垂直方向の側面を有する
ことを特徴にする請求項1から9のいずれか一項に記載の製造方法。 - 前記構成体は、石英又はセラミック又はガラスで作られており、局所的に平行であり、当該構成体の全長にわたって垂直方向である側面を有する
ことを特徴にする請求項1から10のいずれか一項に記載の製造方法。 - 前記構成体は、渦巻き状の棒体によって形成される他のコイルの平面よりも高さが高い外側コイルを有する
ことを特徴にする請求項1から11のいずれか一項に記載の製造方法。 - 前記構成体(100)は、少なくとも1つの発光性エネルギー源によって発光される光を透過し拡散させる
ことを特徴にする請求項1から12のいずれか一項に記載の製造方法。 - 前記構成体(100)の構造は、材料の屈折率を局所的に変更するようにレーザーによって加工される
ことを特徴にする請求項13に記載の製造方法。 - 材料の屈折率がレーザーによって変更された前記構成体(100)の構造は、鏡を形成するために用いられる
ことを特徴にする請求項13に記載の製造方法。 - 材料の屈折率がレーザーによって変更された前記構成体(100)の構造は、光導波路を形成するために用いられる
ことを特徴にする請求項13に記載の製造方法。 - スパイラルを形成するような渦巻き状の棒体で作られる構成体(100)につながれた慣性ブロックを有する共振器(400)であって、
前記構成体は、前記構成体の剛性を局所的に変更するための少なくとも1つの中空部分(310)を有し、これによって、当該共振器の周波数の調整及び/又は等時性ずれの調整が行われ、
前記構成体は、渦巻き状の棒体で形成される他のコイルの平面よりも高さが高い外側コイルを有する
ことを特徴とする共振器。 - スパイラルを形成するような渦巻き状の棒体で作られる構成体(100)につながれた慣性ブロックを有する共振器(400)であって、
前記構成体は、前記構成体の剛性を局所的に変更するための少なくとも1つの中空部分(310)を有し、これによって、当該共振器の周波数の調整及び/又は等時性ずれの調整が行われ、
前記構成体(100)は、少なくとも1つの光エネルギーによって発光された光を透過し分散させる
ことを特徴とする共振器。 - 前記少なくとも1つの中空部分は、少なくとも2つの平行な垂直方向の側面を有する
ことを特徴とする請求項17又は18に記載の共振器(400)。 - 前記構成体は、石英又はセラミック又はガラスで作られ、局所的に平行であり前記構成体の全長にわたって垂直方向に延在する複数の側面を有する
ことを特徴とする請求項17から19のいずれかに記載の共振器。 - 前記構成体(100)の前記構造は、前記材料の屈折率が局所的に変更されるようにレーザーによって加工される
ことを特徴とする請求項20に記載の共振器。 - レーザーによって材料の屈折率が変更された前記構成体(100)の前記構造が、鏡を形成するために用いられる
ことを特徴とする請求項21に記載の共振器。 - レーザーによって材料の屈折率が変更された前記構成体(100)の前記構造が、光導波路を形成するために用いられる
ことを特徴とする請求項21に記載の共振器。 - 当該共振器は、さらに、前記構成体(100)と一体的であるコレット(401)を有し、
前記コレットは、当該共振器をアーバー(700)に取り付けるように構成する穴(402)を有し、
前記穴(402)は、少なくとも1つの側面(403)を有し、この側面(403)には、前記コレットと前記アーバーの間に中間要素(702)を挿入できるように少なくとも1つの溝(701)が配置される
ことを特徴とする請求項17から23のいずれかに記載の共振器(400)。
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EP3457223A1 (fr) * | 2017-09-14 | 2019-03-20 | The Swatch Group Research and Development Ltd | Element piezoelectrique pour un circuit d'autoregulation de frequence, et systeme mecanique oscillant et dispositif le comprenant |
EP3457224B1 (fr) * | 2017-09-14 | 2020-10-28 | The Swatch Group Research and Development Ltd | Element piezoelectrique pour un circuit d'autoregulation de frequence, systeme mecanique oscillant et dispositif le comprenant, et procede de fabrication de l'element piezoelectrique |
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JP5151400B2 (ja) * | 2007-11-04 | 2013-02-27 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
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US20110304412A1 (en) * | 2010-06-10 | 2011-12-15 | Hao Zhang | Acoustic Wave Resonators and Methods of Manufacturing Same |
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