JP6085147B2 - 弾性波デバイスおよびその製造方法 - Google Patents
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- JP6085147B2 JP6085147B2 JP2012250813A JP2012250813A JP6085147B2 JP 6085147 B2 JP6085147 B2 JP 6085147B2 JP 2012250813 A JP2012250813 A JP 2012250813A JP 2012250813 A JP2012250813 A JP 2012250813A JP 6085147 B2 JP6085147 B2 JP 6085147B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 230000001902 propagating effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 284
- 239000010410 layer Substances 0.000 description 98
- 239000010409 thin film Substances 0.000 description 27
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
Vapor Deposition)法を用い成膜される。その後、下部電極12を、フォトリソグラフィ技術およびエッチング技術を用い所望の形状にパターニングする。下部電極12は、リフトオフ法により形成してもよい。
実施例1における各層の材料および膜厚を以下に示す。
周波数調整膜24 : 酸化シリコン 約40nm
上部電極の上層16b: Ru 約200nm
絶縁膜28 : 酸化シリコン 約80nm
上部電極の下層16a: Ru 約30nm
圧電膜14 : AlN 約1.16μm
下部電極の導電膜12f: Ru 約140nm
下部電極の導電膜12d: Cr 約80nm
上部電極16と下部電極12が対向する共振領域50の形状は楕円形であり、長軸は約175μm、短軸は約110μmである。
比較例1
共振周波数の温度係数 −27.3ppm/℃
***振周波数の温度係数 −32.1ppm/℃
実施例1
共振周波数の温度係数 −8.7ppm/℃
***振周波数の温度係数 −8.5ppm/℃
Acoustic Resonator)でもよい。また、実施例5の変形例のように、圧電薄膜共振器は、共振領域50において下部電極12下に圧電膜14を伝搬する弾性波を反射する音響反射膜31を備えるSMR(Solidly
Mounted Resonator)でもよい。なお、実施例5の変形例において、実施例2と同様に下部電極12内に絶縁膜28が配置されていてもよい。実施例3と同様に絶縁膜28の端面がテーパ状に形成されていてもよい。実施例4と同様に対向領域52以外の上部電極16が形成された領域の少なくとも一部には絶縁膜28が形成されていなくてもよい。
12 下部電極
12a 下層
12b 上層
12c、12d、12f、12g 導電膜
14 圧電膜
16 上部電極
16a 下層
16b 上層
16c 導電膜
28 絶縁膜
30 空隙
31 音響反射膜
50 共振領域
52 対向領域
Claims (11)
- 基板と、
前記基板上に設けられた圧電膜と、
下部電極および上部電極の少なくとも一方が第1導電膜と前記第1導電膜上に形成された第2導電膜とを含み、前記圧電膜を挟んで対向した下部電極および上部電極と、
前記第1導電膜と前記第2導電膜との間に挟まれ、前記圧電膜の弾性定数の温度係数とは逆符号の温度係数の弾性定数を有する絶縁膜と、
前記絶縁膜および前記第2導電膜の端面に形成され、前記第1導電膜と第2導電膜とを電気的に短絡させる第3導電膜と、
を具備し、
前記第3導電膜の前記端面の法線方向の膜厚は、前記第1導電膜の前記基板の法線方向の膜厚より小さいことを特徴とする弾性波デバイス。 - 前記絶縁膜は、前記圧電膜を挟み前記下部電極と前記上部電極とが対向する対向領域を実質的に含むことを特徴とする請求項1記載の弾性波デバイス。
- 前記下部電極と前記上部電極とが対向した共振領域内の前記下部電極および前記上部電極の前記少なくとも一方の膜厚は一定であることを特徴とする請求項1または2記載の弾性波デバイス。
- 前記第3導電膜は前記第1導電膜の材料を含むことを特徴とする請求項1から3のいずれか一項記載の弾性波デバイス。
- 前記絶縁膜の前記端面は前記絶縁膜の上面の面積が下面より小さくなるようなテーパ状に形成されていることを特徴とする請求項1から4のいずれか一項記載の弾性波デバイス。
- 前記絶縁膜は、酸化シリコンまたは窒化シリコンを主成分とすることを特徴とする請求項1から5のいずれか一項記載の弾性波デバイス。
- 前記圧電膜は、窒化アルミニウムを主成分とすることを特徴とする請求項1から6のいずれか一項記載の弾性波デバイス。
- 前記下部電極と前記上部電極とが対向した共振領域において、前記基板と前記下部電極との間に空隙が形成されていることを特徴とする請求項1から7のいずれか一項記載の弾性波デバイス。
- 前記下部電極と前記上部電極とが対向した共振領域において、前記下部電極下に前記圧電膜を伝搬する弾性波を反射する音響反射膜を具備することを特徴とする請求項1から7のいずれか一項記載の弾性波デバイス。
- 基板上に圧電膜を形成する工程と、
前記基板上に、前記圧電膜を挟んで対向した下部電極および上部電極を形成する工程と、
を有し、
前記下部電極および前記上部電極を形成する工程の少なくとも一方は、第1導電膜を形成する工程と、前記第1導電膜上に、前記圧電膜の弾性定数の温度係数とは逆符号の温度係数の弾性定数を有する絶縁膜を形成する工程と、前記絶縁膜上に第2導電膜を形成する工程と、前記絶縁膜および前記第2導電膜の端面に第3導電膜が形成されるように、前記第2導電膜、前記絶縁膜および前記第1導電膜をエッチングする工程と、を含むことを特徴とする弾性波デバイスの製造方法。 - 前記第2導電膜、前記絶縁膜および前記第1導電膜をエッチングする工程は、物理的エッチング法を用いることを特徴とする請求項10記載の弾性波デバイスの製造方法。
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US14/068,485 US9559291B2 (en) | 2012-11-15 | 2013-10-31 | Acoustic wave device and method of fabricating the same |
CN201310566328.5A CN103825574B (zh) | 2012-11-15 | 2013-11-14 | 声波器件及其制造方法 |
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JPS58137317A (ja) | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
JPS6016010A (ja) | 1983-07-07 | 1985-01-26 | Nec Corp | 圧電薄膜複合振動子 |
JP3435640B2 (ja) | 2000-05-22 | 2003-08-11 | 株式会社村田製作所 | 縦結合共振子型弾性表面波フィルタ |
US6420820B1 (en) * | 2000-08-31 | 2002-07-16 | Agilent Technologies, Inc. | Acoustic wave resonator and method of operating the same to maintain resonance when subjected to temperature variations |
JP2004254291A (ja) | 2003-01-27 | 2004-09-09 | Murata Mfg Co Ltd | 弾性表面波装置 |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
US7280007B2 (en) | 2004-11-15 | 2007-10-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Thin film bulk acoustic resonator with a mass loaded perimeter |
TWI365603B (en) | 2004-10-01 | 2012-06-01 | Avago Technologies Wireless Ip | A thin film bulk acoustic resonator with a mass loaded perimeter |
JP5100849B2 (ja) * | 2008-11-28 | 2012-12-19 | 太陽誘電株式会社 | 弾性波デバイス、およびその製造方法 |
US8253513B2 (en) * | 2010-03-16 | 2012-08-28 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
US9479139B2 (en) | 2010-04-29 | 2016-10-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
JP6594619B2 (ja) * | 2014-11-14 | 2019-10-23 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
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2012
- 2012-11-15 JP JP2012250813A patent/JP6085147B2/ja active Active
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2013
- 2013-10-31 US US14/068,485 patent/US9559291B2/en active Active
- 2013-11-14 CN CN201310566328.5A patent/CN103825574B/zh active Active
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CN103825574A (zh) | 2014-05-28 |
JP2014099779A (ja) | 2014-05-29 |
US9559291B2 (en) | 2017-01-31 |
CN103825574B (zh) | 2017-06-23 |
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